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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21

Process controls introduction of selected impurities into semiconductor wafers

Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.

Bartholomay, W. C.↗

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Johnson, E. S.↗

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗

Time-dependent outgassing and impurities in the NASA Lewis Bumpy Torus

To investigate the importance to fusion devices of desorption of gas from walls or cryosurfaces under long time operation, preliminary mass spectrometric investigations were carried out on the NASA Lewis Bumpy Torus with a 0.1-2A discharge in D2 at a pressure of 4.0 to 6.6 x 0.00001 torr. During the initial tens of minutes of discharge operation large quantities of a component with mass number 28, believed to be nitrogen, were released. The decrease with time of the nitrogen density after its initial maximum, indicated a diffusion controlled outgassing from cryodeposits or wall material. When cold surfaces were allowed to warm up, large quantities of gas were released. The integrated amount of N2 was typically the same as that released during a discharge, while the amount of H2O was orders of magnitude larger.

Persson, H.↗

The effects of aniline impurities on monopropellant hydrazine thruster performance

Both a 0.45-N and a 0.9-N thruster representative of the designs being flown on 3-axis stabilized spacecraft were used in testing various grades of hydrazine for the phenomenon of monopropellant hydrazine thruster catalyst bed poisoning. Both designs employed Shell 405 ABSG spontaneous catalyst. It is found that pulse shape distortion can be minimized, if not eliminated, by using aniline-free hydrazine. The mechanisms for both steady-state and pulse-mode performance loss are associated with the formation of a catalyst coke similar to the polycyclic aromatic poisons encountered in the petroleum industry. These poisoning mechanisms are reversible, with high-temperature operation being required to drive off the aniline coke deposits. It is recommended that a purified-grade hydrazine be considered for any mission that imposes operational conditions on a thruster which can result in aniline-induced poisoning of the catalyst bed.

Holcomb, L.↗