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At least 379 records · Page 21

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NASA NTRS2009

Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph

A single-pixel prototype of a W-band detector module with a digital back-end was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers, and a WR10 waveguide input with a coaxial local oscillator. State-of-the-art InP HEMT (high electron mobility transistor) MMIC amplifiers at the front end provide approximately 40 dB of gain. The measured noise temperature of the module, at an ambient temperature of 300 K, was found to be as low as 450 K at 95 GHz. The modules will be used to develop multiple instruments for astrophysics radio telescopes, both on the ground and in space. The prototype is being used by Stanford University to characterize noise performance at cryogenic temperatures. The goal is to achieve a 30-50 K noise temperature around 90 GHz when cooled to a 20 K ambient temperature. Further developments include characterization of the IF in-phase (I) and quadrature (Q) signals as a function of frequency to check amplitude and phase; replacing the InP low-noise amplifiers with state-of-the-art 35-nm-gate-length NGC low-noise amplifiers; interfacing the front-end module with a digital back-end spectrometer; and developing a scheme for local oscillator and IF distribution in a future array. While this MMIC is being developed for use in radio astronomy, it has the potential for use in other industries. Applications include automotive radar (both transmitters and receivers), communication links, radar systems for collision avoidance, production monitors, ground-penetrating sensors, and wireless personal networks.

Kangaslahti, Pekka P.↗

NASA NTRS2010

338-GHz Semiconductor Amplifier Module

Samoska, Lorene A.↗

NASA NTRS2010

Power Amplifier Module with 734-mW Continuous Wave Output Power

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

Fung, King Man↗

NASA NTRS2011

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

Fung, King Man↗

NASA NTRS2004

A New Process for Fabricating Random Silicon Nanotips

An improved process for the fabrication of random arrays of silicon nanotips has been demonstrated to be feasible. Relative to other such processes, this process offers advantages of low cost and simplicity. Moreover, this process can readily be combined with other processes used to fabricate integrated circuits and other monolithic silicon structures. Arrays of silicon nanotips are subjects of research and development efforts directed toward utilizing them as field emitters in flat-panel displays, vacuum microelectronics, and microwave devices. Other silicon-nanotip-fabrication processes developed thus far predominantly include lithography, etching, and/or elaborate deposition steps followed by oxide sharpening steps and are both process intensive as well as expensive. In addition to being cheaper and simpler, the present process can efficiently produce silicon nanotips that range in height from a few microns to several tens of microns and are distributed over large areas. The process mentioned here can be summarized as consisting of (1) the growth of micro-etch masks on a silicon substrate, followed by (2) etching away of the masks, along with some of the substrate, to make an array of sharp tips. In the first step of the process, a cleaned silicon substrate is subjected to reactive ion etching (RIE) in a certain mixture of oxygen and carbon tetrafluoride under radio-frequency excitation. This process step results in the growth of fluorine based compounds in the form of stumps randomly distributed on the substrate. These stumps are known in the art as polymer RIE grass. The dimensions of these stumps are of the order of hundreds of nanometers, the exact values depending on process time and gas composition. The areal density of the stumps decreases with increasing process time as they grow and merge with neighboring stumps. These stumps constitute the micro-etch masks for the next step of the process. In the second step of the process, the substrate covered with the microetch masks is subjected to deep reactive ion etching (DRIE) process, which consists of cycles of reactive ion etching alternating with passivation (the Bosch process). The gas used in the etching substeps is sulfur hexafluoride (SF6); the gas used in the passivation substeps is octafluorocyclobutane (C4F8). The portions of the substrate directly under the RIE grass stubs are etched more slowly than are the portions between the stubs. Hence, what remains at the end of the process, after the stubs and parts of the substrate have been etched away, are silicon spikes where the stubs were (see figure). In a variation of the process, one starts with a silicon or silicon-on-insulator substrate with the intent to etch through the full thickness of the substrate. That is to say, one chooses the thickness so that the DRIE step releases individual nanotips. Such individual silicon nanotips may have utility as microscopic probes in biomedical applications.

Manohara, Harish↗

NASA NTRS2011

Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

Kangaslahti, Pekka P.↗

NASA NTRS2011

GEOSTAR-II: A Prototype Water Vapor Imager/Sounder for the Path Mission

We describe the development and progress of the GeoSTAR-II risk reduction activity for the NASA Earth Science Decadal Survey PATH Mission. The activity directly addresses areas of technical risk including the system design, low noise receiver production, sub-array development, signal distribution and digital signal processing.

Monolithic Microwave Integrated Circuit (MMIC)↗

NASA NTRS2012

W-band Heterodyne Receiver Module with 27 K Noise Temperature

We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.

heterodyne module↗

NASA NTRS2012

Low Noise Amplifier Receivers from Millimeter Wave Atmospheric Remote Sensing

We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

millimeter wave radiometers↗

NASA NTRS2012

Initial Results from the GeoSTAR-II Laboratory Demonstration

The Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) team recently concluded its second Earth Science Technology Office (ESTO) IIP-07, "GeoSTAR technology development and risk reduction for PATH". The major accomplishments during this project at JPL were:1) Demonstrate performance and scalability of the 183 GHz receivers 2) Local oscillator phasing architecture and technology 3) Subarray design validation including feedhorns, manifolds and alignment 4) System demonstration of signal distribution topology and measurements. Significant progress has been made to retiring risk of the various subsystems.

synthetic aperture radiometry↗

NASA NTRS2013

The Correlation Radiometer - A New Application in MM-Wave Total Power Radiometry

We describe the design and performance of a 180 GHz correlation radiometer suitable for remote sensing. The radiometer provides continuous comparisons between a the observed signal and a reference load to provide stable radiometric baselines. The radiometer was assembled and tested using parts from the GeoSTAR-II instrument and is fully compatible with operation in a synthetic aperture radiometer or as a standalone technology for use in microwave sounding and imaging. This new radiometer was tested over several days easily demonstrating the required 6 hour stability requirement for observations of mean brightness temperature for a geostationary instrument.

Monolithic Microwave Integrated Circuit (MMIC)↗

NASA NTRS2016

Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)

In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.

MMIC↗

NASA NTRS2001

InP MMIC chip set for power sources covering 86-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.l-μm gatelength InAI/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz.

Ngo, Catherine↗

NASA NTRS1999

W-Band InP Wideband MMIC LNA With 30K Noise Temperature

This paper describes a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range.

low↗

NASA NTRS2018

A W-Band Spatial Power-Combining Amplifier using GaN MMICs

In this paper, we describe a miniature powercombiner for monolithic millimetre-wave integrated circuit (MMIC) chips using spatial power-combining with cavity modes. We have designed GaN MMIC power amplifier chips for 94 GHz, and illustrate the concept of the W-Band Spatial Power Combining Amplifier (WSPCA). Using 1 Watt, 94 GHz MMIC chips in a two-way cavity mode combiner, we were able to achieve 2 Watts of output power with 9 dB gain and 15 % PAE. This technique could be extended to high power MMICs and larger numbers of chips to achieve higher output power in a compact size. The applications include earth science radar, but may be extended to other applications requiring wider bandwidth.

Gawande, Rohit↗

NASA NTRS1984

Infrared-Responsive Monolithic MOS Circuit

Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.

Jhabvala, Muzban D.↗

NASA NTRS1989

Monolithic Microwave Switching Matrix

Gallium arsenide integrated-circuit chip switches any of three microwave input signals to any of three output ports. Measuring 4.9 mm on side, chip contains nine field-effect transistor (FET) crosspoint switches. Housed in custom-designed package with standard connectors for easy integration into system. FET's on chip operated as passive switches and consume no static power and insignificant amounts of switching power. Chip module cascades with similar modules into large arrays handling as many as 100 inputs and 100 outputs. Applications include switching and routing vast amounts of data between computers at extremely high speed. On communications satellite, chip switches microwave signals to and from Earth stations and other satellites.

Fujikawa, Gene↗

NASA NTRS2006

Mission Control Technologies: A New Way of Designing and Evolving Mission Systems

Current mission operations systems are built as a collection of monolithic software applications. Each application serves the needs of a specific user base associated with a discipline or functional role. Built to accomplish specific tasks, each application embodies specialized functional knowledge and has its own data storage, data models, programmatic interfaces, user interfaces, and customized business logic. In effect, each application creates its own walled-off environment. While individual applications are sometimes reused across multiple missions, it is expensive and time consuming to maintain these systems, and both costly and risky to upgrade them in the light of new requirements or modify them for new purposes. It is even more expensive to achieve new integrated activities across a set of monolithic applications. These problems impact the lifecycle cost (especially design, development, testing, training, maintenance, and integration) of each new mission operations system. They also inhibit system innovation and evolution. This in turn hinders NASA's ability to adopt new operations paradigms, including increasingly automated space systems, such as autonomous rovers, autonomous onboard crew systems, and integrated control of human and robotic missions. Hence, in order to achieve NASA's vision affordably and reliably, we need to consider and mature new ways to build mission control systems that overcome the problems inherent in systems of monolithic applications. The keys to the solution are modularity and interoperability. Modularity will increase extensibility (evolution), reusability, and maintainability. Interoperability will enable composition of larger systems out of smaller parts, and enable the construction of new integrated activities that tie together, at a deep level, the capabilities of many of the components. Modularity and interoperability together contribute to flexibility. The Mission Control Technologies (MCT) Project, a collaboration of multiple NASA Centers, led by NASA Ames Research Center, is building a framework to enable software to be assembled from flexible collections of components and services.

Trimble, Jay↗