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This is an update to the ongoing series of presentations tracking the state of domestic proton facility access for the purpose of single event effects (SEE) testing of microelectronics devices and systems. This includes proton research facilities and oncology therapy centers.
This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.
This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.
Destructive SEE pose serious challenges for the reliable use of COTS devices in space systems. We used system-level modeling to determine SEL rates that would likely compromise system reliability, resilience and capabilities. We then assembled a representative dataset of COTS CMOS parts and used nonparametric statistical techniques to assess the threat posed to redundant systems by destructive SEE.
Destructive SEE pose serious challenges for the reliable use of COTS devices in space systems. We use system-level modeling and non-parametric statistics to assess the threat posed to redundant systems by destructive SEE.
A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems...
1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.
Protons with sufficiently high energy, provided in a broad field covering on the order of 0.1m2 can be used to perform board-level testing for single event effects (SEE). NASA has used this approach for board-level testing over the last 20 years. Although many difficulties inherent in SEE testing are simplified when using a board-level test, including reduced cost, the method is inherently risky because of the limited value of the collected data and the potential to make critical mistakes when performing SEE testing this way, leading to data of less value. Historically, NASA’s approach to proton board-level testing has been limited to lower criticality applications. However, with users both inside and outside NASA using this method for higher levels of mission assurance, we have put together a set of lessons and recommendations to improve the value of data collected using this method. Focus areas covered include test preparation, test execution, and interpretation of results.
This paper presents recent heavy ion single-event effects test results for commercial off the shelf devices. Data was taken in CY17 for device evaluation for use in a Class D NASA interplanetary mission payload.
Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.
The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.
This work provides a current update of radiation testing activities on non-volatile memories in support of the NEPP program. Single-event effects data from heavy-ion testing is highlighted on two off-the-shelf high-speed memory modules.
Based on the need to develop and adopt timely and up-to-date guidance to ensure that natural space radiation environment threats do not compromise mission success, the NASA Engineering and Safety Center (NESC) was solicited to develop and publish guidance for deriving radiation hardness assurance (RHA) requirements and for evaluating avionics hardware elements with respect to total ionizing dose, total non-ionizing dose, and single event effects. This document contains the outcome of the NESC assessment.
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.
We present the current status of United States domestic heavy ion single-event effects (SEE) radiation test facilities, including general perspectives on near- and mid-term needs for both capacity and capabilities.
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Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation