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At least 379 records · Page 21

Numerical simulation of a catastrophe model for coronal mass ejections

Van Tend and Kuperus (1978) proposed a simple catastrophe model for magnetically driving coronal mass ejections, prominence eruptions, and two-ribbon flares. Their model, which is based on simple circuit concepts, suggests that a stable configuration containing a current filament will lose equilibrium when the filament current exceeds a critical value. Here, a two-dimensional numerical simulation is used to test how the Van Tend-Kuperus model works in an ideal MHD fluid. The simulation exhibits the expected loss of mechanical equilibrium near the predicted critical value, but the current filament moves only a short distance upward before coming to rest at a new equilibrium. However, this new equilibrium contains a current sheet which is resistively unstable to magnetic reconnection, and if magnetic reconnection occurs rapidly, the filament can continue to move upward at Alfvenic speeds.

Forbes, T. G.↗

Addressable-Matrix Integrated-Circuit Test Structure

Method of quality control based on use of row- and column-addressable test structure speeds collection of data on widths of resistor lines and coverage of steps in integrated circuits. By use of straightforward mathematical model, line widths and step coverages deduced from measurements of electrical resistances in each of various combinations of lines, steps, and bridges addressable in test structure. Intended for use in evaluating processes and equipment used in manufacture of application-specific integrated circuits.

Sayah, Hoshyar R.↗

Study of mathematical modeling of communication systems transponders and receivers

The modeling of communication receivers is described at both the circuit detail level and at the block level. The largest effort was devoted to developing new models at the block modeling level. The available effort did not permit full development of all of the block modeling concepts envisioned, but idealized blocks were developed for signal sources, a variety of filters, limiters, amplifiers, mixers, and demodulators. These blocks were organized into an operational computer simulation of communications receiver circuits identified as the frequency and time circuit analysis technique (FATCAT). The simulation operates in both the time and frequency domains, and permits output plots or listings of either frequency spectra or time waveforms from any model block. Transfer between domains is handled with a fast Fourier transform algorithm.

Walsh, J. R.↗

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Teverovsky, Alexander↗

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Toftul, Alexandra↗

Transient response to three-phase faults on a wind turbine generator

In order to obtain a measure of its responses to short circuits a large horizontal axis wind turbine generator was modeled and its performance was simulated on a digital computer. Simulation of short circuit faults on the synchronous alternator of a wind turbine generator, without resort to the classical assumptions generally made for that analysis, indicates that maximum clearing times for the system tied to an infinite bus are longer than the typical clearing times for equivalent capacity conventional machines. Also, maximum clearing times are independent of tower shadow and wind shear. Variation of circuit conditions produce the modifications in the transient response predicted by analysis.

Gilbert, L. J.↗

Using Modern Design Tools for Digital Avionics Development

Using Modem Design Tools for Digital Avionics Development Shrinking development time and increased complexity of new avionics forces the designer to use modem tools and methods during hardware development. Engineers at the Marshall Space Flight Center have successfully upgraded their design flow and used it to develop a Mongoose V based radiation tolerant processor board for the International Space Station's Water Recovery System. The design flow, based on hardware description languages, simulation, synthesis, hardware models, and full functional software model libraries, allowed designers to fully simulate the processor board from reset, through initialization before any boards were built. The fidelity of a digital simulation is limited to the accuracy of the models used and how realistically the designer drives the circuit's inputs during simulation. By using the actual silicon during simulation, device modeling errors are reduced. Numerous design flaws were discovered early in the design phase when they could be easily fixed. The use of hardware models and actual MIPS software loaded into full functional memory models also provided checkout of the software development environment. This paper will describe the design flow used to develop the processor board and give examples of errors that were found using the tools. An overview of the processor board firmware will also be covered.

Hyde, David W.↗

Modeling Growth of Nanostructures in Plasmas

As semiconductor circuits shrink to CDs below 0.1 nm, it is becoming increasingly critical to replace and/or enhance existing technology with nanoscale structures, such as nanowires for interconnects. Nanowires grown in plasmas are strongly dependent on processing conditions, such as gas composition and substrate temperature. Growth occurs at specific sites, or step-edges, with the bulk growth rate of the nanowires determined from the equation of motion of the nucleating crystalline steps. Traditional front-tracking algorithms, such as string-based or level set methods, suffer either from numerical complications in higher spatial dimensions, or from difficulties in incorporating surface-intense physical and chemical phenomena. Phase field models have the robustness of the level set method, combined with the ability to implement surface-specific chemistry that is required to model crystal growth, although they do not necessarily directly solve for the advancing front location. We have adopted a phase field approach and will present results of the adatom density and step-growth location in time as a function of processing conditions, such as temperature and plasma gas composition.

Hwang, Helen H.↗

On implementing self-checking microprocessors

A simple and general model of the interfaces and check circuits used for comparing and detecting faults in a pair of 16-bit processors is described, and problems encountered in the application of TI 9900 processors are discussed. The greatest incompatibility is found to lie between the rollback structures of the CPUs and the interface and check logic (ICL) model. The ICL model generates a reset when an error is detected, and a rollback is expected to occur when it is released. The TI 9900 requires a reset of minimum duration, and after release goes through an initialization cycle, obtains rollback parameters from fixed memory locations, and executes the rollback, consistent with the ICL. The ICL is relatively simple, having a complexity equivalent to fewer than 1000 gates.

Rennels, D. A.↗

Dual-Resonator Kinetic-Inductance Detector for Distinction between Signal and 1/ƒ Frequency Noise

Astronomical kinetic inductance detectors (KIDs), similar to quantum information devices, experience performance-limiting noise from materials. In particular, 1/ƒ (frequency) noise arises from two-level system defects (TLSs) in the circuit dielectrics and material interfaces and can be a dominant noise mechanism. Here, we present a dual-resonator KID (DuRKID), which is designed for improved noise-equivalent power relative to standard 1/ƒ -noise-limited KIDs. In this study we present the DuRKID schematic, a fabricated example, our first measurement results, a theoretical model including 1/ƒ noise, and a system-noise model containing additional noise sources. The circuit consists of two superconducting resonators sharing an electrical capacitance bridge of four capacitors, each of which hosts TLSs. The device is intended to operate using hybridization of the modes, which causes TLSs to either couple to one mode or the other, depending upon which capacitor they reside in. In contrast, the signal will affect a resonator inductance and, due to mode hybridization, this causes correlated frequency changes in both modes. Therefore, one can better distinguish the photon signal from the TLS frequency noise. To achieve hybridization, a TiN inductor is current biased to allow tuning of one bare-resonator mode into degeneracy with the other. Measurements show that the resonator modes hybridize as expected. The inter-resonator coupling and unintentional coupling of the two resonators to transmission lines are also characterized in measurements. A quantum information-science model allows device-parameter extraction from experimental data and a 1/ƒ noise analysis with uncorrelated noise. A system-noise analysis of the DuRKID, with comparisons to standard KIDs, is performed with generation-recombination noise and amplifier noise. The study reveals that the DuRKID can exhibit a large performance advantage over TLS-limited KID detectors.

N Forouzani↗

Incorporation of an Energy Equation into a Pulsed Inductive Thruster Performance Model

A model for pulsed inductive plasma acceleration containing an energy equation to account for the various sources and sinks in such devices is presented. The model consists of a set of circuit equations coupled to an equation of motion and energy equation for the plasma. The latter two equations are obtained for the plasma current sheet by treating it as a one-element finite volume, integrating the equations over that volume, and then matching known terms or quantities already calculated in the model to the resulting current sheet-averaged terms in the equations. Calculations showing the time-evolution of the various sources and sinks in the system are presented to demonstrate the efficacy of the model, with two separate resistivity models employed to show an example of how the plasma transport properties can affect the calculation. While neither resistivity model is fully accurate, the demonstration shows that it is possible within this modeling framework to time-accurately update various plasma parameters.

Polzin, Kurt A.↗

Using In-Situ Deposition of Metallic Thin Films on Mars to Monitor Atmospheric H20

We describe the use of a novel sensor, designed to characterize the reactive nature of the Martian atmosphere, to also characterize the instantaneous abundance of atmospheric H,O. The sensor deposits, in situ, a thin silver film onto a sapphire substrate and monitors oxidation by measuring resistance of the Ag film during both deposition and subsequent oxidation [1,2]. . The evaporation source is placed in the center of a hollow, open-ended tube. On flash heating the source, evaporated metallic silver rapidly reacts with oxidizing gases in the tube, depositing on the tube walls as a resisitive Ag oxide film. Unoxidized silver deposits over the Ag oxides, once the oxidizing gases in the vicinity of the source have been consumed. Since the ends of the tube are open, atmospheric gases in the tube cause a time delay as the evaporated silver initially reacts with the available O2, and H2O; once oxidizing gases in the tube are significantly depleted, a silver film closes the chemiresistor circuit. In principle this operation mode provides a repeatable measure of the variable H2O abundance, since O2, levels are constant in the atmosphere. To explore the utility of the instrument as an H2O sensor, predict its behavior, and identify possible failure modes, we developed a numerical model of the instrument, and exercised it for Mars conditions. The model predicts the behavior of the electrical circuit, the temperature dependence of resistivity for each component, and the resultant Joule heating. The model balances Joule heating against radiation, sensible heat loss to ambient CO2, and, latent heat loss from sublimating Ag. The flux of Ag atoms from the source is tracked continuously. In the gas phase, the number density of Ag, O2, and H2O is calculated, along with their reaction rates on collision. The model suggests that Ag substantially depletes H2O only near the center of the tube. The model supports the hypothesis that the onset of high conductivity between the A u electrodes is a function of the H2O abundance in the ambient gas, but only to a limit; when H2O abundances are buffered at or above 240K (an H2O abundance that would not have occurred on Mars), metallic Ag never deposits in excess of Ago, and the circuit does not close. A significant difference in the Mars simulation is that the Ag source sublimates more quickly, primarily because of differences in sensible heat fluxes from the source. This allows subsequent heating of the W filament used to support the Ag source. Had the originally-designed experimental sequence been carried out on Mars, the filament might have melted, making subsequent investigations impossible.

Zent, A. P.↗

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗

Redundancy approaches in bubble domain memories

Fabrication of integrated circuit chips to compensate for faulty memory elements is discussed. Procedure for testing chips to determine extent of redundancy and faults is described. Mathematical model to define operation is presented. Schematic circuit diagram of test equipment is provided.

Almasi, G. S.↗

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

Abdulaziz, Salman S.↗

Modeling heterogeneous processor scheduling for real time systems

A new model is presented to describe dataflow algorithms implemented in a multiprocessing system. Called the resource/data flow graph (RDFG), the model explicitly represents cyclo-static processor schedules as circuits of processor arcs which reflect the order that processors execute graph nodes. The model also allows the guarantee of meeting hard real-time deadlines. When unfolded, the model identifies statically the processor schedule. The model therefore is useful for determining the throughput and latency of systems with heterogeneous processors. The applicability of the model is demonstrated using a space surveillance algorithm.

Leathrum, J. F.↗

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Schlecht, E.↗

The HP 85192B EEFet3 GaAs FET Nonlinear Model Used in the High Efficiency Microwave Power Amplifier (HEMPA)

Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.

Sims, William Herbert, III↗