Density-dose behavior of irradiated polytetrafluoroethylene.
Room temperature density-dose behavior of neutron and gamma irradiated polytetrafluoroethylene /PTFE/ noting crystallinity variations
POLYTETRAFLUOROETHYLENE↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effect of low-dose reactor radiation on the dynamic mechanical behavior of pyrolytic graphite.
Low dose reactor irradiation effect on temperature dependence of dynamic modulus and internal friction of as-deposited pyrolytic graphite
INTERNAL FRICTION↗
Oncogenic transformation through the cell cycle and the LET dependent inverse dose rate effect
Synchronised populations of mouse C3H/10T-1/2 cells were obtained by a stringent mitotic dislodgment procedure. Mitotic cells rapidly attach and progress sequentially through the cell cycle. Irradiation (3 Gy of X rays) was carried out at intervals from 0 to 18 h after initiating cell cycle progression of the mitotic cells. Oncogenic transformation was enhanced 10-fold over cells irradiated soon after replating (G1 and S phases) for cells in a near 2 h period corresponding to cells in G2 phase but not in mitosis. The cell surviving fraction had a 2-1/2-fold variation with resistant peaks corresponding to the late G1 and late S phases. These findings provide experimental support for the hypothesis initiated by Rossi and Kellerer and developed by Brenner and Hall to explain the LET dependent inverse dose rate effect for oncogenic transformation.
NASA Discipline Radiation Health↗
Comparison of Total Dose Responses on High Resolution Analog-to-Digital Converter Technologies
This paper compares total dose effects on two different technology (CMOS and BiCMOS) 12-bit ADCs from the same manufacturer, Burr-Brown.
Dose Responses Analog-to-Digital Converter↗
Total Ionizing Dose Effects on 64Mb 3.3V DRAMs
64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.
Ionizing Dose Effects Samsung Mitsubishi↗
Total Ionizing Dose Effects on Voltage-to-Frequency Converters
This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).
low dose rate (LDR) Voltage-to-Frequency Converter↗
Comparison of Total Dose Effects on Micropower Op-Amps: Bipolar and CMOS
This paper compares low-paper op-amps, OPA241 (bipolar) and OPA336 (CMOS), from Burr-Brown, MAX473 (bipolar) and MAX409 (CMOS), characterizing their total dose response with a single 2.7V power supply voltage.
Micropower op-amps bipolar CMOS Total Dose Effects↗
Total Dose Effects on Bipolar Integrated Circuits at Low Temperature
Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.
linear integrated circuits↗
Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Displacement Damage↗
Compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
spacecraft electronics↗
Compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA
Total ionizing dose and displacement damage testing is performed to characterize and determine the feasibility of candidate electronics for NASA spacecraft and program use. AEROSPACE ENVIRONMENTS
spacecraft electronics↗
Compendium of Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
radiation effects↗
Total Ionizing Dose Test Report for the MB85AS4MT ReRAM
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM).
Total Ionizing Dose (TID)↗
Total Ionizing Dose Test Report for the AD9364 RF Transceiver
This is a Total Ionizing Dose (TID) test report for the Analog Devices AD9364 RF Transceiver.
complementary metal oxide semiconductor (CMOS)↗
New Approach to Total Dose Specification for Spacecraft Electronics
This presentation provides information on approach to total dose radiation hardness assurance that was developed that includes variability of the space radiation environment.
Total Dose Distributions in Space↗
Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA GSFC and NEPP
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
and Total Ionizing Dose.↗
Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and Selected NASA Electronic Parts and Packaging Program
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Optoelectronics↗
Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology
The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.
Radiation↗