Search NASA⌕ Search

SEARCH · Search NASA

Results for “hexagonal”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Intercalation and Exfoliation of Hexagonal Boron Nitride

Innovators at NASA's Glenn Research Center have made several breakthroughs in treating hexagonal boron nitride (hBN) nanomaterials, improving their properties to supplant carbon nanotubes in many applications. These advances have hBN nanomaterials set to transform applications such as heat sinks, electrical insulators, lightweight piezoelectric polymers for satellites and unmanned aerial vehicles, ceramic composites for jet engines, biomedical components, and radiation shielding technology.

Hexagonal Boron Nitride↗
DOE OSTI2012

Computation of neutron fluxes in clusters of fuel pins arranged in hexagonal assemblies (2D and 3D)

For computations of fluxes, we have used Carvik's method of collision probabilities. This method requires tracking algorithms. An algorithm to compute tracks (in 2D and 3D) has been developed for seven hexagonal geometries with cluster of fuel pins. This has been implemented in the NXT module of the code DRAGON. The flux distribution in cluster of pins has been computed by using this code. For testing the results, they are compared when possible with the EXCELT module of the code DRAGON. Tracks are plotted in the NXT module by using MATLAB, these plots are also presented here. Results are presented with increasing number of lines to show the convergence of these results. We have numerically computed volumes, surface areas and the percentage errors in these computations. These results show that 2D results converge faster than 3D results. The accuracy on the computation of fluxes up to second decimal is achieved with fewer lines. (authors)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Ion-Conductive, Viscosity-Tunable Hexagonal Boron Nitride Nanosheet Inks

Liquid-phase exfoliation of layered solids holds promise for the scalable production of 2D nanosheets. When combined with suitable solvents and stabilizing polymers, the rheology of the resulting nanosheet dispersions can be tuned for a variety of additive manufacturing methods. While significant progress is made in the development of electrically conductive nanosheet inks, minimal effort is applied to ion-conductive nanosheet inks despite their central role in energy storage applications. In this work, the formulation of viscosity-tunable hexagonal boron nitride (hBN) inks compatible with a wide range of printing methods that span the spectrum from low-viscosity inkjet printing to high-viscosity blade coating is demonstrated. The inks are prepared by liquid-phase exfoliation with ethyl cellulose as the polymer dispersant and stabilizer. Thermal annealing of the printed structures volatilizes the polymer, resulting in a porous microstructure and the formation of a nanoscale carbonaceous coating on the hBN nanosheets, which promotes high wettability to battery electrolytes. The final result is a printed hBN nanosheet film that possesses high ionic conductivity, chemical and thermal stability, and electrically insulating character, which are ideal characteristics for printable battery components such as separators. Indeed, lithium-ion battery cells based on printed hBN separators reveal enhanced electrochemical performance that exceeds commercial polymer separators.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unconventional Anomalous Hall Effect in Hexagonal Polar Magnet Y 3 Co 8 Sn 4

A rare realization of unconventional anomalous Hall effect (UAHE) both below and above the magnetic transition temperature (T C ) in a hexagonal noncentrosymmetric magnet Y 3 Co 8 Sn 4 , using a combined experimental and ab initio calculations. Occurrence of such UAHE is mainly attributed to the reciprocal ($\mathscr{KS}$) topology (i.e., the presence of topological Weyl points at/near the Fermi level), along with some contribution from the topological magnetic texture (at low temperatures), as inferred from the measured field-dependent ac susceptibility. The effect of UAHE on the measured transport behavior however evolves differently with temperature above and below T C = 53 K, suggesting different physical mechanism responsible in the two phases. A unique planar ferrimagnetic ordering is found to be the most stable state with ab-plane as the easy plane below T C . The simulated net magnetization and the moment per Co atom agrees fairly well with the experimentally measured values. A reasonably large anomalous Hall conductivity (AHC) is also observed in both the phases (above and below T C ) of the present compound, which is again not so ubiquitous. In conclusion, the results underscore the family of R 3 Co 8 Sn 4 (R = rare earth) polar magnets as a compelling backdrop for exploring the synergy of magnetism and topological non-trivial electronic states, pivotal for spintronic applications.

Density functional theory calculations↗
DOE OSTI2018

Aligned van der Waals Coupled Growth of Carbon Nanotubes to Hexagonal Boron Nitride

Abstract 1D carbon nanotubes (CNTs) are grown on hexagonal boron nitride (hBN) surfaces. The nanotubes show clear preference to align to specific crystal directions of the hBN substrate. Raman spectra confirm that the nanotubes consist of sp 2 carbon, while nanomanipulation shows that they are van der Waals coupled to the underlying hBN substrate. Scanning conductance and electric force microscopy show that the CNTs have significantly greater electrical conductance compared to the hBN. This integrated aligned growth of materials with similar lattices, yet having dissimilar dimensionality and electrical conducting properties, provides a promising route to achieving intricate nanoscale electrical circuits on high‐quality insulating substrates.

Nasseri, Mohsen↗
DOE OSTI2023

Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates

Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N 2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.

2D materials↗
DOE OSTI2024

Infrared Optical Anisotropy in Quasi‐1D Hexagonal Chalcogenide BaTiSe 3

Polarimetric infrared (IR) detection bolsters IR thermography by leveraging the polarization of light. Optical anisotropy, i.e., birefringence and dichroism, can be leveraged to achieve polarimetric detection. Recently, giant optical anisotropy is discovered in quasi-1D narrow-bandgap hexagonal perovskite sulfides, A 1+x TiS 3 , specifically BaTiS 3 and Sr 9/8 TiS 3 . In these materials, the critical role of atomic-scale structure modulations in the unconventional electrical, optical, and thermal properties raises the broader question of the nature of other materials that belong to this family. To address this issue, for the first time, high-quality single crystals of a largely unexplored member of the A 1+x TiX 3 (X = S, Se) family, BaTiSe 3 are synthesized. Single-crystal X-ray diffraction determined the room-temperature structure with the P31c space group, which is a superstructure of the earlier reported P6 3 /mmc structure. The crystal structure of BaTiSe 3 features antiparallel c-axis displacements similar to but of lower symmetry than BaTiS 3 , verified by the polarization dependent Raman spectroscopy. Fourier transform infrared (FTIR) spectroscopy is used to characterize the optical anisotropy of BaTiSe 3 , whose refractive index along the ordinary (E ⊥ c) and extraordinary (E ‖ c) optical axes is quantitatively determined by combining ellipsometry studies with FTIR. With a giant birefringence Δn ∼ 0.9, BaTiSe 3 emerges as a new candidate for miniaturized birefringent optics for mid-wave infrared to long-wave infrared imaging.

optical anisotropy↗
DOE OSTI2019

Construction of a Nanoporous Highly Crystalline Hexagonal Boron Nitride from an Amorphous Precursor for Catalytic Dehydrogenation

Abstract Hexagonal boron nitride (h‐BN) is regarded as a graphene analogue and exhibits important characteristics and vast application potentials. However, discovering a facile method for the preparation of nanoporous crystalline h‐BN nanosheets (h‐BNNS) is still a challenge. Herein, a novel and simple route for the conversion of amorphous h‐BN precursors into highly crystalline h‐BNNS was achieved through a successive dissolution–precipitation/crystallization process in the presence of magnesium. The h‐BNNS has high crystallinity, high porosity with a surface area of 347 m 2 g −1 , high purity, and enhanced thermal stability. Improved catalytic performance of crystalline h‐BNNS was evidenced by its much higher catalytic efficiency in the dehydrogenation of dodecahydro‐N‐ethylcarbazole, compared with its amorphous h‐BN precursor, as well as other precious‐metal‐loaded heterogeneous catalysts.

Chen, Hao↗
DOE OSTI2020

Radical Chemistry and Reaction Mechanisms of Propane Oxidative Dehydrogenation over Hexagonal Boron Nitride Catalysts

Abstract Although hexagonal boron nitride (h‐BN) has recently been identified as a highly efficient catalyst for the oxidative dehydrogenation of propane (ODHP) reaction, the reaction mechanisms, especially regarding radical chemistry of this system, remain elusive. Now, the first direct experimental evidence of gas‐phase methyl radicals (CH 3 . ) in the ODHP reaction over boron‐based catalysts is achieved by using online synchrotron vacuum ultraviolet photoionization mass spectroscopy (SVUV‐PIMS), which uncovers the existence of gas‐phase radical pathways. Combined with density functional theory (DFT) calculations, the results demonstrate that propene is mainly generated on the catalyst surface from the C−H activation of propane, while C 2 and C 1 products can be formed via both surface‐mediated and gas‐phase pathways. These observations provide new insights towards understanding the ODHP reaction mechanisms over boron‐based catalysts.

Zhang, Xuanyu↗
DOE OSTI2019

Construction of a Nanoporous Highly Crystalline Hexagonal Boron Nitride from an Amorphous Precursor for Catalytic Dehydrogenation

Abstract Hexagonal boron nitride (h‐BN) is regarded as a graphene analogue and exhibits important characteristics and vast application potentials. However, discovering a facile method for the preparation of nanoporous crystalline h‐BN nanosheets (h‐BNNS) is still a challenge. Herein, a novel and simple route for the conversion of amorphous h‐BN precursors into highly crystalline h‐BNNS was achieved through a successive dissolution–precipitation/crystallization process in the presence of magnesium. The h‐BNNS has high crystallinity, high porosity with a surface area of 347 m 2 g −1 , high purity, and enhanced thermal stability. Improved catalytic performance of crystalline h‐BNNS was evidenced by its much higher catalytic efficiency in the dehydrogenation of dodecahydro‐N‐ethylcarbazole, compared with its amorphous h‐BN precursor, as well as other precious‐metal‐loaded heterogeneous catalysts.

Chen, Hao↗
DOE OSTI2020

Radical Chemistry and Reaction Mechanisms of Propane Oxidative Dehydrogenation over Hexagonal Boron Nitride Catalysts

Although hexagonal boron nitride (h-BN) has recently been identified as a highly efficient catalyst for the oxidative dehydrogenation of propane (ODHP) reaction, the reaction mechanisms, especially regarding radical chemistry of this system, remain elusive. Now, the first direct experimental evidence of gas-phase methyl radicals (CH 3 . ) in the ODHP reaction over boron-based catalysts is achieved by using online synchrotron vacuum ultraviolet photoionization mass spectroscopy (SVUV-PIMS), which uncovers the existence of gas-phase radical pathways. Combined with density functional theory (DFT) calculations, the results demonstrate that propene is mainly generated on the catalyst surface from the C-H activation of propane, while C 2 and C 1 products can be formed via both surface-mediated and gas-phase pathways. These observations provide new insights towards understanding the ODHP reaction mechanisms over boron-based catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Single Atoms Anchored in Hexagonal Boron Nitride for Propane Dehydrogenation from First Principles

We report single-atom catalysts embedded in N-doped graphene have attracted great interest recently, but the hexagonal boron nitride (h-BN) is much less explored as a support. Using first principles density function theory and molecular dynamics, here we investigate the stability of Pt, Au, and Ru single atoms anchored at B and N vacancies on h-BN. We find that Pt and Ru single atoms are much more stable than Au on h-BN. We further examine propane dehydrogenation on these single-atom catalysts and find that Pt 1 at the B vacancy in h-BN and Ru 1 at the N vacancy in h-BN show excellent activity for propane dehydrogenation, as evidenced by low energy barriers for both dehydrogenation steps. Our work suggests that Pt and Ru single atoms anchored at vacancy sites in h-BN could be promising for propane dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Hexagonal Boron Nitride: Physical Properties, Hydride Vapor‐Phase Epitaxy Growth of Large‐Diameter Quasi‐Bulk Wafers and Applications

Hexagonal boron nitride ( h ‐BN), with its ultrawide bandgap and 2D structure, holds an immense promise for advanced semiconductor applications. Scaling bulk crystals to large‐diameter wafers, crucial for complex device fabrication, remains a challenge with high temperature, high pressure, and metal flux solution methods. To address this, recent efforts have focused on hydride vapor‐phase epitaxy (HVPE) for producing large diameter thick h ‐BN quasi‐bulk wafers, reaching hundreds of micrometers. These HVPE‐grown quasi‐bulk crystals exhibit excellent c ‐axis long‐range order. Notably, the in‐plane mobility‐lifetime products for both electrons and holes surpass 10 −4 cm 2 V −1 , which are two orders of magnitude greater than the out‐of‐plane (vertical) values, highlighting the potential for high‐performance devices leveraging superior lateral transport. Lateral detectors fabricated from 100 μm thick B‐10 enriched h‐ BN wafers have achieved a record 60% thermal neutron detection efficiency. Based on its physical properties, h‐ BN appears to be an outstanding material of choice for light‐triggered electronic power switches capable of supporting high ‐ voltage and high ‐ power operations. These recent advancements in large‐diameter h ‐BN quasi‐bulk crystal growth, enabled by HVPE, pave the way for applications spanning deep UV photonics, high‐power electronics, high‐efficiency neutron detection, and quantum information technologies, establishing h ‐BN as both a versatile active semiconductor and an ideal substrate.

Jiang, Hongxing [Department of Electrical and Comp↗
DOE OSTI2017

Periodic Mesoporous Hexagonal Boron Nitride at High Pressure: A Route to Cubic Boron Nitride Nanocrystals and Mesoporous Cubic Boron Nitride

Periodic mesoporous hexagonal boron nitride was investigated as a precursor for nanoscale forms of cubic boron nitride. Cubic boron nitride (c-BN) nanocrystals were obtained at a pressure of 14 GPa and a temperature of 13008C. The synthesized nanocrystals have diameters of ~ 50 nm and are solution processible. Mesoporous c-BN formed at a pressure of 10 GPa and 1000 8C. The mesoporous c-BN has a pore size distribution centered around 3 nm and a surface area of 122 m2/g as determined by electron tomography. At pressures of 8 and 6 GPa near monodisperse h-BN nanodiscs with diameters of 0.5-1 mm and 0.2-0.5 mm were formed, respectively. The discs formed colloidal solutions in acetone. The hydrodynamic radius of the discs matched the radii determined by dynamic light scattering indicating absence of nanodisc aggregation in solution.

Mandal, Manik↗
DOE OSTI2023

Spatial Control of Substitutional Dopants in Hexagonal Monolayer WS 2 : The Effect of Edge Termination

The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving desired physicochemical properties. Substitutional doping with adjustable doping levels has been previously demonstrated in 2D transition metal dichalcogenides (TMDs); however, the spatial control of dopant distribution remains an open field. In this work, edge termination is demonstrated as an important characteristic of 2D TMD monocrystals that affects the distribution of substitutional dopants. Particularly, in chemical vapor deposition (CVD)-grown monolayer WS 2 , it is found that a higher density of transition metal dopants is always incorporated in sulfur-terminated domains when compared to tungsten-terminated domains. Here two representative examples demonstrate this spatial distribution control, including hexagonal iron- and vanadium-doped WS 2 monolayers. Density functional theory (DFT) calculations are further performed, indicating that the edge-dependent dopant distribution is due to a strong binding of tungsten atoms at tungsten-zigzag edges, resulting in the formation of open sites at sulfur-zigzag edges that enable preferential dopant incorporation. Based on these results, it is envisioned that edge termination in crystalline TMD monolayers can be utilized as a novel and effective knob for engineering the spatial distribution of substitutional dopants, leading to in-plane hetero-/multi-junctions that display fascinating electronic, optoelectronic, and magnetic properties.

2D transition metal dichalcogenides↗
DOE OSTI2024

Enhanced Hydrogen Evolution Catalysis of Pentlandite due to the Increases in Coordination Number and Sulfur Vacancy during Cubic‐Hexagonal Phase Transition

Abstract The search for new phases is an important direction in materials science. The phase transition of sulfides results in significant changes in catalytic performance, such as MoS 2 and WS 2 . Cubic pentlandite [cPn, (Fe, Ni) 9 S 8 ] can be a functional material in batteries, solar cells, and catalytic fields. However, no report about the material properties of other phases of pentlandite exists. In this study, the unit‐cell parameters of a new phase of pentlandite, sulfur‐vacancy enriched hexagonal pentlandite (hPn), and the phase boundary between cPn and hPn are determined for the first time. Compared to cPn, the hPn shows a high coordination number, more sulfur vacancies, and high conductivity, which result in significantly higher hydrogen evolution performance of hPn than that of cPn and make the non‐nano rock catalyst hPn superior to other most known nanosulfide catalysts. The increase of sulfur vacancies during phase transition provides a new approach to designing functional materials.

Chemistry↗
DOE OSTI2025

Defect Engineering in Large‐Scale CVD‐Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, it is demonstrated that formation of negative boron vacancy defects, V B − , in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. Different defect types are identified by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons and emitting at 800 nm) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (N B V N ) and reveal the presence of additional “dark” paramagnetic defects that influence spin-lattice relaxation time (T 1 ) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

CVD↗