Search NASA⌕ Search

SEARCH · Search NASA

Results for “silicon photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Emulating the Deutsch-Josza algorithm with an inverse-designed terahertz gradient-index lens

An all-dielectric photonic metastructure is investigated for application as a quantum algorithm emulator (QAE) in the terahertz frequency regime; specifically, we show implementation of the Deustsh-Josza algorithm. The design for the QAE consists of a gradient-index (GRIN) lens as the Fourier transform subblock and patterned silicon as the oracle subblock. First, we detail optimization of the GRIN lens through numerical analysis. Then, we employed inverse design through a machine learning approach to further optimize the structural geometry. Through this optimization, we enhance the interaction of the incident light with the metamaterial via spectral improvements of the outgoing wave.

Blackwell, Ashley N.↗
DOE OSTI2020

Photonic devices fabricated from (111)‐oriented single crystal diamond

Abstract Diamond is a material of choice in the pursuit of integrated quantum photonic technologies. So far, the majority of photonic devices fabricated from diamond are made from (100)‐oriented crystals. In this work, we demonstrate a methodology for the fabrication of optically active membranes from (111)‐oriented diamond. We use a liftoff technique to generate membranes, followed by chemical vapor deposition of diamond in the presence of silicon to generate homogenous silicon vacancy color centers with emission properties that are superior to those in (100)‐oriented diamond. We further use the diamond membranes to fabricate microring resonators with quality factors exceeding ~ 3000. Supported by finite‐difference time‐domain calculations, we discuss the advantages of (111)‐oriented structures as building blocks for quantum nanophotonic devices. image

Regan, Blake↗
DOE OSTI2020

Electron spin resonance spectroscopy with femtoliter detection volume

We report electron spin resonance measurements of donors in silicon at millikelvin temperatures using a superconducting LC planar micro-resonator and a Josephson parametric amplifier. The resonator includes a nanowire inductor, defining a femtoliter detection volume. Due to strain in the substrate, the donor resonance lines are heavily broadened. In this work, single-spin to photon coupling strengths up to ~ 3 kHz are observed. The single shot sensitivity is 120 ± 24 spins/Hahn echo, corresponding to ≈ 12 ± 3 spins / Hz for repeated acquisition.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Performance of Hamamatsu VUV4 SiPMs for detecting liquid argon scintillation

Detection of light signals is crucial to a wide range of particle detectors. In particular, efficient detection of vacuum ultraviolet (VUV) light will provide new opportunities for some novel detectors currently being developed, but is technically challenging. In this paper, we characterized the performance of Hamamatsu VUV4 silicon photomultipliers (SiPMs) for detecting VUV argon scintillation light without wavelength shifting. Using a customized cryogenic amplifier design, we operated two models of VUV4 SiPMs inside liquid argon and thoroughly examined their direct sensitivities to liquid argon scintillation. In addition to describing their cryogenic performance, we measured a photon detection efficiency of 14.7 +1.1 -2.4 % and 17.2 +1.6 -3.0 % at 128 nm for these two VUV4 models for operation at 4 V of overvoltage, with the main uncertainty arising from the SiPM reflectivity for VUV light.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Performance of a phonon-mediated kinetic inductance detector at the NEXUS cryogenic facility

Microcalorimeters that leverage microwave kinetic inductance detectors to read out phonon signals in the particle-absorbing target, referred to as kinetic inductance phonon-mediated (KIPM) detectors, offer an attractive detector architecture to probe dark matter (DM) down to the fermionic thermal relic mass limit. A prototype KIPM detector featuring a single aluminum resonator patterned onto a 1-gram silicon substrate was operated in the Northwestern EXerimental Underground Site (NEXUS) low-background facility at Fermilab for characterization and evaluation of this detector architecture’s efficacy for a DM search. An energy calibration was performed by exposing the bare substrate to a pulsed source of 470-nm photons, resulting in a baseline resolution on the energy absorbed by the phonon sensor of 2.1 ± 0.2 eV, a factor of two better than the current state of the art, enabled by quasiparticle lifetimes extending up to 6.5 ms. However, due to the subpercent phonon collection efficiency, the resolution on energy deposited in the substrate is limited to σ E = 318 ± 29 eV. We further model both the signal pulse shape as a function of device temperature to extract quasiparticle lifetimes, and the observed noise spectra.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Self-Isolated Raman Lasing with a Chiral Dielectric Metasurface

The light sources that power photonic networks are small and scalable, but they also require the incorporation of optical isolators that allow light to pass in one direction only, protecting the light source from damaging backreflections. Unfortunately, the size and complex integration of optical isolators makes small-scale and densely integrated photonic networks infeasible. Here, we overcome this limitation by designing a single device that operates both as a coherent light source and as its own optical isolator. Our design relies on high-quality-factor dielectric metasurfaces that exhibit intrinsic chirality. By carefully manipulating the geometry of the constituent silicon metaatoms, we design three-dimensionally chiral modes that act as optical spin-dependent filters. Using spin-polarized Raman scattering together with our chiral metacavity, we demonstrate Raman lasing in the forward direction, while the lasing action is suppressed by over an order of magnitude for reflected light. Our high-$\textit{Q}$ chiral metasurface design presents a new approach toward compactly isolating integrated light sources by directly tailoring the emission properties of the light source itself.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Enhanced biochemical sensing with high- Q transmission resonances in free-standing membrane metasurfaces

Optical metasurfaces provide solutions to label-free biochemical sensing by localizing light resonantly beyond the diffraction limit, thereby selectively enhancing light–matter interactions for improved analytical performance. However, high-Q resonances in metasurfaces are usually achieved in the reflection mode, which impedes metasurface integration into compact imaging systems. Here, we demonstrate a metasurface platform for advanced biochemical sensing based on the physics of the bound states in the continuum (BIC) and electromagnetically induced transparency (EIT) modes, which arise when two interfering resonances from a periodic pattern of tilted elliptic holes overlap both spectrally and spatially, creating a narrow transparency window in the mid-infrared spectrum. We experimentally measure these resonant peaks observed in transmission mode (Q ~ 734 at λ ~ 8.8 µm) in free-standing silicon membranes and confirm their tunability through geometric scaling. We also demonstrate the strong coupling of the BIC-EIT modes with a thinly coated PMMA film on the metasurface, characterized by a large Rabi splitting (32 cm -1 ) and biosensing of protein monolayers in transmission mode. Our new photonic platform can facilitate the integration of metasurface biochemical sensors into compact and monolithic optical systems while being compatible with scalable manufacturing, thereby clearing the way for on-site biochemical sensing in everyday applications.

Rosas, Samir [Univ. of Wisconsin, Madison, WI (Uni↗
DOE OSTI2022

Characterization of Hamamatsu VUV4 SiPM Performance for Liquid Argon Scintillation

Detection of light signals is crucial to a wide range of particle detectors. In particular, efficient detection of vacuum ultraviolet (VUV) light will provide new opportunities for some novel detectors currently being developed, but is technically challenging. In this article, we characterized the performance of Hamamatsu VUV4 silicon photomultipliers (SiPMs) for detecting VUV argon scintillation light without wavelength shifting. Here, using a customized cryogenic amplifier design, we operated two models of VUV4 SiPMs inside liquid argon and thoroughly examined their direct sensitivities to liquid argon scintillation. In addition to describing their cryogenic performance, we measured a photon detection efficiency of 14.7+1.1–2.4% and 17.2+1.6–3.0% at 128 nm for these two VUV4 models for operation at 4 V of overvoltage, with the main uncertainty arising from the SiPM reflectivity for VUV light.

Pershing, Teal↗
DOE OSTI2024

Neutron and photon in-vivo materials characterization at the evolving plasma-material interface in plasma-burning fusion environments

This report includes the first set of MOSS data collected in the context of fusion-relevant plasma-material interactions. The data collected show that the surface curvature and stress irreversibly change during low-energy deuterium ion irradiation. This holds for both tungsten thin films, bulk tungsten, and single-crystal silicon. Meanwhile, argon irradiation did not produce this same effect. The surface morphology of the exposed samples was virtually identical regardless of gas species. There were, however, some surface chemistry differences between argon-exposed and deuterium-exposed samples, mainly concerning the oxide states of the W4f XPS signal. The changes in surface chemistry could be due to hydrogen dynamics on the tungsten surfaces, though further investigation will be required with in-situ irradiation and analysis. The changes in surface stress could also not be explained by temperature alone, as the temperature reached during the ion irradiations was too low to induce non-elastic strain. With this in mind, deuterium retention in the materials could change the surface curvature and stress. To confirm this, further work will be needed to quantify the change in curvature and relate it to ion flux, fluence, and deuterium retention. Unfortunately, when this work was conducted, the experimental setup for thermal desorption spectroscopy was not operating correctly, and that work could not be included in this dissertation. Despite experimental difficulties, this work shows the first results of a promising technique to study deuterium dynamics in tungsten-based reconstituted thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV – ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV – centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV – centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV– centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ~20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Focusing with saw-tooth refractive lenses at a high-energy X-ray beamline

The Advanced Photon Source 1-ID beamline, operating in the 40–140 keV X-ray energy range, has successfully employed continuously tunable saw-tooth refractive lenses to routinely deliver beams focused in both one and two dimensions to experiments for over 15 years. The practical experience of implementing such lenses, made of silicon and aluminium, is presented, including their properties, control, alignment, and diagnostic methods, achieving ∼1 µm focusing (vertically). Ongoing development and prospects towards submicrometre focusing at these high energies are also mentioned.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Clearing a path for light through non-Hermitian media

Abstract The performance of all active photonic devices today is greatly limited by loss. Here, we show that one can engineer a low loss path in a metal-clad lossy multi-mode waveguide while simultaneously achieving high-performance active photonic devices. We leverage non-Hermitian systems operating beyond the exceptional point to enable the redistribution of losses in a multi-mode photonic waveguide. Consequently, our multi-mode waveguide offers low propagation losses for fundamental mode while other higher order modes experience prohibitively high losses. Furthermore, we show an application of this non-Hermitian waveguide platform in designing power-efficient thermo-optic phase shifters with significantly faster response times than conventional silicon-based thermo-optic phase shifters. Our device achieves a propagation loss of less than 0.02 dB μm −1 for our non-Hermitian waveguide-based phase shifters with high performance efficiency of P π ⋅ τ = 19.1 mW μs. In addition, our phase shifters have significantly faster response time (rise/fall time), τ ≈ 1.4 μs, compared to traditional silicon based thermo-optic phase shifters.

Materials Science↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Abstract The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi‐color confocal microscopy and density functional theory are used to examine photo‐induced SiV recombination — from neutral, to single‐, to double‐negatively charged — over a broad spectral window in chemical‐vapor‐deposition (CVD) diamond under ambient conditions. For the SiV 0 to SiV ‐ transition, a linear growth of the photo‐recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV ‒ , on the other hand, yields only fractional recombination into SiV 2‒ , a finding that is interpreted in terms of a photo‐activated electron tunneling process from proximal nitrogen atoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Measurement of energy resolution with the NEXT-White silicon photomultipliers

The NEXT-White detector, a high-pressure gaseous xenon time projection chamber, demonstrated the excellence of this technology for future neutrinoless double beta decay searches using photomultiplier tubes (PMTs) to measure energy and silicon photomultipliers (SiPMs) to extract topology information. This analysis uses $^{83m}$Kr data from the NEXT-White detector to measure and understand the energy resolution that can be obtained with the SiPMs, rather than with PMTs. The energy resolution obtained of (10.9 ± 0.6)%, full-width half-maximum, is slightly larger than predicted based on the photon statistics resulting from very low light detection coverage of the SiPM plane in the NEXT-White detector. The difference in the predicted and measured resolution is attributed to poor corrections, which are expected to be improved with larger statistics. Furthermore, the noise of the SiPMs is shown to not be a dominant factor in the energy resolution and may be negligible when noise subtraction is applied appropriately, for high-energy events or larger SiPM coverage detectors. These results, which are extrapolated to estimate the response of large coverage SiPM planes, are promising for the development of future, SiPM-only, readout planes that can offer imaging and achieve similar energy resolution to that previously demonstrated with PMTs.[graphic not available: see fulltext]

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0νββ), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0νββ of 136 Xe with projected half-life sensitivity of 1.35 x 10 28 yr. To reach this sensitivity, the design goal for nEXO is ≤1% energy resolution at the decay Q-value (2458.07 ± 0.31 keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163 K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay Q-value for the nEXO design.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Enabling a novel approach to a controlled fabrication of 1D crystalline nanowires on suspended microstructures of arbitrary geometries using two direct-writing technologies

Recent progresses in additive manufacturing have inspired new technologies, such as direct laser writing technique, based on two-photon polymerization (2 PP), which complements and further enriches the nanofabrication tools portfolio. Here, we combine 2 PP and our mask-free scanning probe assisted ‘direct-write patterning’ (DWP) method to allow for: a) the fabrication of micro-bridge structures with sub-micrometer resolution, b) selective synthesis of crystalline ZnO nanowires at predefined locations, respectively. This synergistic approach enables cantilever probe patterning of catalysts directly on suspended micro-bridges for in-situ CVD growth of nanoscale material, in a templated manner. The study reported here represents the first proof-of-concept experiments demonstrating versatile and scalable methodology, which can be applied and straightforwardly extended to grow a variety of other nanomaterials, in a controlled and selective fashion, on freestanding micro/nanoscale structures, whose size and geometry can be conveniently varied via templating of sacrificial 2 PP polymeric scaffolds. Furthermore, the demonstration of the possibility to integrate this new approach with the conventional lithography techniques provides a step forward to the development of the novel class of hybrid polymer-silicon-1D or -2D materials, and systems. The quality of the produced ZnO nanowire assemblies was assessed using several physical characterization methods.

36 MATERIALS SCIENCE↗