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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22

Submicrosecond Power-Switching Test Circuit

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Folk, Eric N.↗

Developing Large-Scale Bayesian Networks by Composition: Fault Diagnosis of Electrical Power Systems in Aircraft and Spacecraft

In this paper, we investigate the use of Bayesian networks to construct large-scale diagnostic systems. In particular, we consider the development of large-scale Bayesian networks by composition. This compositional approach reflects how (often redundant) subsystems are architected to form systems such as electrical power systems. We develop high-level specifications, Bayesian networks, clique trees, and arithmetic circuits representing 24 different electrical power systems. The largest among these 24 Bayesian networks contains over 1,000 random variables. Another BN represents the real-world electrical power system ADAPT, which is representative of electrical power systems deployed in aerospace vehicles. In addition to demonstrating the scalability of the compositional approach, we briefly report on experimental results from the diagnostic competition DXC, where the ProADAPT team, using techniques discussed here, obtained the highest scores in both Tier 1 (among 9 international competitors) and Tier 2 (among 6 international competitors) of the industrial track. While we consider diagnosis of power systems specifically, we believe this work is relevant to other system health management problems, in particular in dependable systems such as aircraft and spacecraft. (See CASI ID 20100021910 for supplemental data disk.)

Mengshoel, Ole Jakob↗

Wireless Chemical Sensor and Sensing Method for Use Therewith

A wireless chemical sensor includes an electrical conductor and a material separated therefrom by an electric insulator. The electrical conductor is an unconnected open-circuit shaped for storage of an electric field and a magnetic field. In the presence of a time-varying magnetic field, the first electrical conductor resonates to generate harmonic electric and magnetic field responses. The material is positioned at a location lying within at least one of the electric and magnetic field responses so-generated. The material changes in electrical conductivity in the presence of a chemical-of-interest.

Woodard, Stanley E.↗

Wireless Chemical Sensor and Sensing Method for Use Therewith

A wireless chemical sensor includes an electrical conductor and a material separated therefrom by an electric insulator. The electrical conductor is an unconnected open-circuit shaped for storage of an electric field and a magnetic field. In the presence of a time-varying magnetic field, the first electrical conductor resonates to generate harmonic electric and magnetic field responses. The material is positioned at a location lying within at least one of the electric and magnetic field responses so-generated. The material changes in electrical conductivity in the presence of a chemical-of-interest.

Woodard, Stanley E.↗

Wireless Chemical Sensing Method

A wireless chemical sensor includes an electrical conductor and a material separated therefrom by an electric insulator. The electrical conductor is an unconnected open-circuit shaped for storage of an electric field and a magnetic field. In the presence of a time-varying magnetic field, the first electrical conductor resonates to generate harmonic electric and magnetic field responses. The material is positioned at a location lying within at least one of the electric and magnetic field responses so-generated. The material changes in electrical conductivity in the presence of a chemical-of-interest.

Woodard, Stanley E.↗

Eroding Potentiometers

Eroding potentiometers have been devised for measuring the time-dependent positions of char fronts advancing through layers of insulating material subject to intense heating from one side. In the original application, the material layers of interest are thermal insulators in rocket motors and the heat comes from firing of the motors, but the principle of operation is equally applicable to other insulating materials subject to intense heating (e.g., ablative fire-retardant materials). Measuring the thickness decrement of propellant (in hybrid motors in particular) is another possible application of this transducer. Telemetry informs mission control of the propellant left after each burn. An eroding potentiometer could be characterized, more precisely, as an eroding two-wire resistor. It includes a twisted pair of thin, insulated wires oriented along the thickness of, and embedded in, the layer of thermal-insulation material to be tested (see figure). The electrical insulation material on the wires should be one for which the charring temperature is about the same as (or perhaps slightly less than) that of the thermal- insulation material to be tested. In the original rocket-motor application, the wires have a diameter of 0.003 in. (.0.08 mm), are made of manganin, and are coated with polyimide for electrical insulation. Outside the thermal insulation on the cold side, the wire leads are connected to a Wheatstone bridge circuit for measurement of electrical resistance change.

Eggett, Mark↗

Comparison and Application of Battery Modeling Methods for Conceptual Electric Aircraft

Growing interest in design and optimization of electrified aircraft propulsion concepts prompts the need for accurate, flexible, and efficient methods to model battery systems. Presented in this paper are three battery modeling methods that have been used at NASA’s Glenn Research Center, each representing different mathematical or electrical approaches. Thévenin equivalent circuit, normalization, and curve-fitting methods are compared against battery cell test data for the X-57 Maxwell electric aircraft technology demonstrator. The methods are then applied in a simple multidisciplinary optimization context using NASA’s Six-Passenger Electric Quadrotor concept to determine their applicability and performance. The normalization method achieves the highest accuracy for steady and unsteady discharge rates with a voltage mean error percentage of 0.423% and 1.186%, respectively. Optimal quadrotor mission range between the models varies up to 0.5 nmi, identifying current battery modeling methods as a potentially significant contributor to mission analysis error. A set of relevant tools and techniques for conceptual battery modeling are identified in this paper, with conclusions made on the utility of each modeling approach for various design challenges.

power↗

Finite Ground Coplanar (FGC) Waveguide: Characteristics and Advantages Evaluated for Radiofrequency and Wireless Communication Circuits

Researchers in NASA Lewis Research Center s Electron Device Technology Branch are developing transmission lines for radiofrequency and wireless circuits that are more efficient, smaller, and make lower cost circuits possible. Traditionally, radiofrequency and wireless circuits have employed a microstrip or coplanar waveguide to interconnect the various electrical elements that comprise a circuit. Although a coplanar waveguide (CPW) is widely viewed as better than a microstrip for most applications, it too has problems. To solve these problems, NASA Lewis and the University of Michigan developed a new version of a coplanar waveguide with electrically narrow ground planes. Through extensive numerical modeling and experimental measurements, we have characterized the propagation constant of the FGC waveguide, the lumped and distributed circuit elements integrated in the FGC waveguide, and the coupling between parallel transmission lines. Although the attenuation per unit length is higher for the FGC waveguide because of higher conductor loss, the attenuation is comparable when the ground plane width is twice the center conductor width as shown in the following graph. An upper limit to the line width is derived from observations that when the total line width is greater than ld/2, spurious resonances due to the parallel plate waveguide mode are established. Thus, the ground plane width must be less than ld/4 where ld is the wavelength in the dielectric. Since the center conductor width S is typically less than l/10 to maintain good transverse electromagnetic mode characteristics, it follows that a ground plane width of B = 2S would also be electrically narrow. Thus, we can now treat the ground strips of the FGC waveguide the same way that the center conductor is treated.

Ponchak, George E.↗

Sequential Polarity-Reversing Circuit

Proposed circuit reverses polarity of electric power supplied to bidirectional dc motor, reversible electro-mechanical actuator, or other device operating in direction depending on polarity. Circuit reverses polarity each time power turned on, without need for additional polarity-reversing or direction signals and circuitry to process them.

Labaw, Clayton C.↗

Evaluation of Contact Separation Force Testing as a Screening Methodology for Electrical Socket Contacts

During system level testing intermittent and permanent open circuit failures of mated, crimp removable, electrical contact pairs were experienced. The root cause of the failures was determined to be low (but not zero) contact forces applied by the socket contact tines against the engaging pin. The low contact force reduces the effectiveness of the wiping action of the socket tines against the pin. The observed failure mode may be produced when insufficient wiping during mate, demate and small relative movement in use allows for the accumulation of debris or insulating films that electrically separate the contact pair. The investigation identified at least three manufacturing process control problems associated with the socket contacts that enabled shipment of contacts susceptible to developing low contact forces: (1) Improper heat treatment of the socket tines resulting in plastic rather than elastic behavior; (2) Overly thinned socket tines at their base resulting in reduced pin retention forces; (3) Insufficient screening tests to identify parts susceptible to the aforementioned failure mechanisms. The results from an extensive screening program of socket contacts utilizing the industry standard contact separation force test procedures are described herein. The investigation shows this method to be capable of identifying initially weak sockets. However, sockets whose contact retention forces may degrade during use may not be screened out by pin retention testing alone. Further investigations are required to correlate low contact retention forces with increased electrical contact resistance in the presence of insulating films that may accumulate in the use environment.

Christopher Green↗

X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I

X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.

Shaw, David C.↗

Study of a Solar Sensor for use in Space Vehicle Orientation Control Systems

The solar sensor described herein may be used for a variety of space operations requiring solar orientation. The use of silicon solar cells as the sensing elements provides the sensor with sufficient capability to withstand the hazards of a space environment. A method of arranging the cells in a sensor consists simply of mounting them at a large angle to the base. The use of an opaque shield placed between the cells and perpendicular to the base enhances the small-angle sensitivity while adding slightly to the bulk of the sensor. The difference in illumination of these cells as the result of an oblique incidence of the light rays from the reference source causes an electrical error signal which, when used in a battery-bridge circuit, requires a minimum of electrical processing for use in a space-vehicle orientation control system. An error which could occur after prolonged operation of the sensor is that resulting from asymmetrical aging of opposite cells. This could be periodically corrected with a balance potentiometer. A more routine error in the sensor is that produced by reflected earth radiation. This error may be eliminated over a large portion of the operation time by restricting the field of view and, consequently, the capture capability. A more sophisticated method of eliminating this error is to use separate sensors, for capture and fine pointing, along with a switching device. An experimental model has been constructed and tested to yield an output sensitivity of 1.2 millivolts per second of arc with a load resistance of 1,000 ohms and a reference light source of approximately 1,200 foot-candles delivered at the sensor.

Spencer, Paul R.↗

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

electronic packaging↗

Noise-margin limitations on gallium-arsenide VLSI

Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15,000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits wil be needed to extend circuit complexity to the range currently dominated by silicon.

Long, Stephen I.↗

Physically separating printed circuit boards with a resilient, conductive contact

A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.

Baker, John D.↗

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗