Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon carbide - PLA”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22

The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. Results indicate that the coefficient of friction and groove height (corresponding to the wear volume) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease with an increase in solute content of binary alloys. A separate correlation exists between the solute to iron atomic radius ratio and the decreasing rates of change of coefficient of friction and groove height with increasing solute content. These rates of change are minimum at a solute to iron radius ratio of unity. They increase as the atomic ratio increases or decreases linearly from unity. The correlations indicate that atomic size is an important parameter in controlling friction and wear of alloys.

Miyoshi, K.↗

Melt infiltration of silicon carbide compacts. I - Study of infiltration dynamics

Countergravity, pressure-assisted infiltration with a 2014 Al alloy of suitably tamped porous compacts of platelet shaped single crystals of alpha (hexagonal) silicon carbide was used to measure particulate wettability and infiltration kinetics under dynamic conditions relevant to pressure casting of composites. A threshold pressure P(th) for ingression of the infiltrant was identified based on the experimental penetration length versus pressure profiles for a range of experimental variables which included infiltration pressure, infiltration time, SiC size and SiC surface chemistry. The results showed that P(th) decreased whereas the penetration length increased with increasing SiC size and infiltration time. Cu-coated SiC led to lower P(th) and larger penetration lengths compared to uncoated SiC under identical conditions. These observations have been discussed in the light of theoretical models of infiltration and the kinetics of wetting.

Asthana, Rajiv↗

Heat Transfer from High-Temperature Surfaces to Fluids III - Correlation of Heat-Transfer Data for Air Flowing in Silicon Carbide Tube with Rounded Entrance, Inside Diameter of 3/4 Inch, and Effective Length of 12 Inches

A heat-transfer investigation was conducted with air flowing through an electrically heated silicon carbide tube with a rounded entrance, an inside diameter of 3/4 inch, and effective heat-transfer length of 12 inches over a range of Reynolds numbers up to 300,000 and a range of average inside-tube-wall temperatures up to 2500 R. The highest corresponding local outside-tube-wall temperature was 3010 R.

Sams, Eldon W.↗

Thermal residual stresses in silicon-carbide/titanium (0/90) laminate

The current work formulated a micromechanical analysis of a cross-ply laminate and calculated the thermal residual stress in a very thick (0/90)(sub 2n) silicon-carbide/titanium laminate. Results were also shown for a unidirectional laminate of the same material. Discrete fiber-matrix models assuming a rectangular array of fibers with a fiber volume fraction of 32.5 percent and a three-dimensional, finite-element analysis were used. Significant differences in the trends and magnitudes for the fiber, matrix, and interface stresses were calculated for unidirectional and (0/90) models. Larger hoop stresses calculated for the (0/90) model indicate that it may be more susceptible to radial cracking when subjected to mechanical loading than the unidirectional model. The axial stresses in the matrix were calculated to be slightly larger for the (0/90) model. The compressive axial stresses in the fiber were significantly larger in the (0/90) model. The presence of the cross-ply in the (0/90) model reduced the constraint on the fiber, producing radial interface stresses that were less compressive, which could lead to earlier failure of the fiber-matrix interface.

Bigelow, C. A.↗

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Beheim, Glenn M.↗

Adhesion and friction of iron-base binary alloys in contact with silicon carbide in vacuum

Single pass sliding friction experiments were conducted with various iron base binary alloys (alloying elements were Ti, Cr, Mn, Ni, Rh, and W) in contact with a single crystal silicon carbide /0001/ surface in vacuum. Results indicate that atomic size and concentration of alloying elements play an important role in controlling adhesion and friction properties of iron base binary alloys. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases linearly as the solute to iron atomic radius ratio increases or decreases from unity. The chemical activity of the alloying elements was also an important parameter in controlling adhesion and friction of alloys, as these latter properties are highly dependent upon the d bond character of the elements.

Miyoshi, K.↗

Effect of Environment on Stress-Rupture Behavior of a Carbon Fiber-Reinforced Silicon Carbide (C/SiC) Ceramic Matrix Composite

Stress-rupture tests were conducted in air, vacuum, and steam-containing environments to identify the failure modes and degradation mechanisms of a carbon fiber-reinforced silicon carbide (C/SiC) composite at two temperatures, 600 and 1200 C. Stress-rupture lives in air and steam containing environments (50 - 80% steam with argon) are similar for a composite stress of 69 MPa at 1200 C. Lives of specimens tested in a 20% steam/argon environment were about twice as long. For tests conducted at 600 C, composite life in 20% steam/argon was 20 times longer than life in air. Thermogravimetric analysis of the carbon fibers was conducted under similar conditions to the stress-rupture tests. The oxidation rate of the fibers in the various environments correlated with the composite stress-rupture lives. Examination of the failed specimens indicated that oxidation of the carbon fibers was the primary damage mode for specimens tested in air and steam environments at both temperatures.

Verrilli, Michael J.↗

Development of Binder Jet Compatible Silicon Carbide Mixtures for Increased Sintered Density

Binder jet additive manufacturing can process a variety of ceramic powder feedstocks to manufacture near net shape green parts that are subsequently sintered to achieve densification. In particular, silicon carbide (SiC) is a promising ceramic material for heat exchangers in energy storage applications and binder jet is a well-suited process for manufacturing these heat exchangers due to the often geometrically complex designs. However, the need for good powder flowability in binder jet printing often limits the feedstock powder to be larger particles rather than that of ultra fine submicron powders used in conventional ceramic processing, which are more readily densified during sintering. The present work explores the use of various powder mixtures and sintering settings to identify strategies for achieving high density sintered parts in binder jet compatible systems without the use of infiltration. Liquid-phase sintering additives and bimodal powder mixtures are explored alongside different sintering temperatures, rates, atmospheres, and hold times. Two mixtures were found to be good candidates for further exploration: 1) 90 wt% 0.6 µm SiC + 6.25 wt% Al 2 O 3 + 3.75 wt% Y 2 O 3 mixture achieved the highest sintered relative density of 91.2%; and 2) a bimodal mixture comprised of 45 wt% 10 µm SiC + 45 wt% 0.6 µm SiC + 6.25 wt% Al 2 O 3 + 3.75 wt% Y 2 O 3 had the best powder flowability of the powders measured and a 75.1% sintered relative density.

25 ENERGY STORAGE↗

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Scardelletti, Maximilian C.↗

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d 1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

74 ATOMIC AND MOLECULAR PHYSICS↗

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.↗

Potential of Glassy Carbon and Silicon Carbide Photonic Structures as Electromagnetic Radiation Shields for Atmospheric Re-entry

During high-velocity atmospheric entries, space vehicles can be exposed to strong electromagnetic radiation from ionized gas in the shock layer. Glassy carbon (GC) and silicon carbide (SiC) are candidate thermal protection materials due to their high melting point and also their good thermal and mechanical properties. Based on data from shock tube experiments, a significant fraction of radiation at hypersonic entry conditions is in the frequency range from 215 to 415 THz. We propose and analyze SiC and GC photonic structures to increase the reflection of radiation in that range. For this purpose, we performed numerical optimizations of various structures using an evolutionary strategy. Among the considered structures are layered, porous, woodpile, inverse opal and guided-mode resonance structures. In order to estimate the impact of fabrication inaccuracies, the sensitivity of the reflectivity to structural imperfections is analyzed. We estimate that the reflectivity of GC photonic structures is limited to 38% in the aforementioned range, due to material absorption. However, GC material can be effective for photonic reflection of individual, strong spectral line. SiC on the other hand can be used to design a good reflector for the entire frequency range.

Komarevskiy,Nikolay↗

Effect of silicon carbide on devitrification of a glass coating for reusable surface insulation

Devitrification (nucleation and growth of cristobalite) were investigated in the LI-0042 coating used for the space shuttle surface insulation. Excessive devitrification was found to be associated with the silicon carbide (SiC) constituent in the coating. Test results show that significant devitrification occurred only when SiC was present in the coating and when the thermal-exposure atmosphere was oxidizing.

Ransone, P. O.↗

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.↗

Mark I Silicon Carbide Integrated Circuit Test Oven Assembly and Programming Guide

This report provides a parts list, with assembly and programming instructions for building firstgeneration (Mark I) compact test ovens; this oven design is customized for prolonged functional electrical testing of prototype silicon carbide (SiC) devices at temperatures up to 500 °C (932 °F). The general approach of using multiple compact ovens to perform long-term, high-temperature electronics testing efficiently is described in a conference paper (Izadnegahdar, Alain, et al.: Alternative Setup for LongDuration Low-Duty-Cycle 600 °C Ambient Testing of SiC Integrated Circuits. International Microelectronics Assembly and Packaging Society (iMAPS) HiTECH 2021 Technology Crossover Extravaganza, 2021), available at https://ntrs.nasa.gov/citations/20210011676. The new Mark I oven design described here offers several significant improvements over the compact oven described in that paper. For example, it is constructed from commercial off-the-shelf (COTS) components and requires minimal assembly. Much of the work involves drilling holes in the two aluminum project boxes, which contain the control electronics and the oven itself. The cost of components is less than $200 (USD) per oven, which makes constructing multiple ovens affordable. In addition, the two-box design separates the high-temperature heater from the electronics, which keeps the electronics cool, prolonging the lifetime of these components.

high temperature↗

Fracture of silicon carbide whisker reinforced aluminum

An attempt is made to apply standard fracture toughness testing procedures, developed for metals, to whisker reinforced metal matrix composites. Test were carried out on compact-tension, center-notched, and edge-notched specimens of silicon carbide whisker reinforced extruded 2124 aluminum plate (10 and twenty volume percent of whiskers), with the loading direction either parallel or perpendicular to the extrusion direction. None of the tests is found to give a valid fracture toughness according to the criteria of the ASTM Standard E-399.

Albritton, J. R.↗

Theoretical study of intrinsic defects in cubic silicon carbide 3C-SiC

Using the local moment counter charge (LMCC) method to accurately represent the asymptotic electrostatic boundary conditions within density functional theory supercell calculations, we present a comprehensive analysis of the atomic structure and energy levels of point defects in cubic silicon carbide (3C-SiC). Finding that the classical long-range dielectric screening outside the supercell induced by a charged defect is a significant contributor to the total energy. we describe and validate a modified Jost screening model to evaluate this polarization energy. This leads to bulk-converged defect levels in finite size supercells. With the LMCC boundary conditions and a standard Perdew-Burke-Ernzerhof (PBE) exchange correlation functional, the computed defect level spectrum exhibits no band gap problem: the range of defect levels spans ~2.4 eV, an effective defect band gap that agrees with the experimental band gap. Comparing with previous literature, our LMCC-PBE defect results are in consistent agreement with the hybrid-exchange functional results of Oda et al. [J. Chem. Phys. 139, 124707 (2013)] rather than their PBE results. The difference with their PBE results is attributed to their use of a conventional jellium approximation rather than the more rigorous LMCC approach for handling charged supercell boundary conditions. The difference between standard dft and hybrid functional results for defect levels lies not in a band gap problem but rather in solving a boundary condition problem. The LMCC-PBE entirely mitigates the effect of the band gap problem on defect levels. The more computationally economical PBE enables a systematic exploration of 3C-SiC defects, where, most notably, we find that the silicon vacancy undergoes Jahn-Teller-induced distortions from the previously assumed T d symmetry, and that the divacancy, like the silicon vacancy, exhibits a site-shift bistability in p -type conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗