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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Intermittent oxidation kinetics and metal/oxide interfacial undulation

The phenomenon of oxygen-adsorption-induced surface restructuring is widespread across various metal-oxygen systems, yet its impact on initiating bulk oxide formation remains largely unexplored. In this study, through in-situ atomic-resolution electron microscopy observations of surface oxidation of Cu(110) and Cu 85 Au 15 (110), we unveil intermittent oxide-film growth modulated by oxygen-induced surface restructuring. This modulation is evidenced by repeated pinning of Cu 2 O growth front at isolated Cu columns of the c(6×2)-O reconstruction, owing to required long-range diffusion of Cu and O atoms to the Cu 2 O growth front. We reveal that Cu vacancies, generated at the Cu 2 O growth front, are injected into the Cu 2 O/Cu interface, inducing hill-and-valley undulation of the Cu 2 O film. In contrast, atomic vacancies produced during the Cu 85 Au 15 (110) oxidation preferentially migrate into interfaces between Au-rich and Au-poor regions in the bulk, resulting in a flat and adherent Cu 2 O film. These findings demonstrate the critical role of oxygen-induced surface restructuring in modulating oxide-film-growth kinetics and manipulability of the fate of injected vacancies by alloying, thereby offering insights applicable to a broader range of metal-oxygen systems for fine-tuning oxidation kinetics and enhancing oxide/metal interfacial adhesion.

25 ENERGY STORAGE↗
DOE OSTI2026

Improved Mechanical Adhesion Enabled by Bilayer Hole Transport Layers in Perovskite Solar Cells

We investigate buried-interface mechanical integrity in metal-halide perovskite half-cells using carbazole-based self-assembled monolayers (SAMs) and bilayer hole transport layers composed of metal oxide underlayers and SAMs. Combining macroscopic and microscopic characterization, we quantify interfacial fracture energy (Gc) and identify delamination pathways. SAM deposition on NiOx increases Gc by approximately 10-fold compared with ITO, highlighting the importance of oxide underlayer selection. To isolate the effect of removing noncovalently bonded SAM molecules, we use vapor-deposited perovskite as a solvent-free model system, decoupling the rinse step inherent to solution processing. Removing loosely bound SAM molecules increases Gc from 0.94 +- 0.08 J.m-2 to 4.82 +- 0.79 J.m-2. These results show that oxide selection and SAM binding quality are both critical for strengthening buried interfaces and designing mechanically robust perovskite solar cells.

14 SOLAR ENERGY↗
NASA NTRS1997

Oxidation Resistance and Critical Sulfur Content of Single-Crystal Superalloys

The high-temperature components of a jet turbine engine are made from nickel-base superalloys. These components must be able to withstand high stresses, fatigue, and corrosive reactions with high-temperature gases. Such oxidation resistance is associated with slow-growing Al2O3 scales that remain adherent to superalloy components after many thermal cycles. Historically, good oxidation resistance has been obtained by coating these components with Ni-Cr-Al-Y coatings, where small additions of yttrium (Y) were necessary for scale adhesion. Subsequently, it was found that the Y aids scale adhesion by preventing sulfur from segregating to the scale metal interface and thus preventing the sulfur from weakening the oxide-metal bonds. Y is a difficult element to incorporate in single-crystal superalloy castings, but it was shown in early work at the NASA Lewis Research Center that good adhesion could be obtained for low-sulfur, uncoated, singlecrystal superalloys, without Y additions. Low sulfur contents for these uncoated superalloys were achieved in the laboratory by a high-temperature hydrogen annealing process. This process allows segregation and surface cleaning of sulfur monolayers in a reducing environment. Another approach is to remove sulfur from the alloy in the melting process. The present study was designed to establish a guideline for the minimum level of desulfurization needed to achieve maximum performance. Coupons of various thicknesses of the superalloy PWA 1480 were hydrogen annealed at various times (8 to 100 hr) and temperatures (1000 to 1300 C), resulting in coupons with sulfur contents ranging from about 0.05 to 5 ppm. Cyclic oxidation tests at 1100 C were then used to assess adhesion and spalling. The weight change of one set of 20-mil (0.5-mm) samples, annealed for 20 hr at 1000, 1100, 1200, and 1300 C, is shown in the following figure. Clearly, the effect of the annealing temperature is quite dramatic in that the higher temperatures produced scales that spalled very little, whereas the lower temperatures resulted in severe weight losses comparable to those for the as-received, unannealed sample.

Smialek, James L.↗
DOE OSTI2023

Atomic Dynamics of Multi‐Interfacial Migration and Transformations

Redox-induced interconversions of metal oxidation states typically result in multiple phase boundaries that separate chemically and structurally distinct oxides and suboxides. Directly probing such multi-interfacial reactions is challenging because of the difficulty in simultaneously resolving the multiple reaction fronts at the atomic scale. Using the example of CuO reduction in H 2 gas, a reaction pathway of CuO → monoclinic m-Cu 4 O 3 → Cu 2 O is demonstrated and identifies interfacial reaction fronts at the atomic scale, where the Cu 2 O/m-Cu 4 O 3 interface shows a diffuse-type interfacial transformation; while the lateral flow of interfacial ledges appears to control the m-Cu 4 O 3 /CuO transformation. Together with atomistic modeling, it is shown that such a multi-interface transformation results from the surface-reaction-induced formation of oxygen vacancies that diffuse into deeper atomic layers, thereby resulting in the formation of the lower oxides of Cu 2 O and m-Cu 4 O 3 , and activate the interfacial transformations. In conclusion, these results demonstrate the lively dynamics at the reaction fronts of the multiple interfaces and have substantial implications for controlling the microstructure and interphase boundaries by coupling the interplay between the surface reaction dynamics and the resulting mass transport and phase evolution in the subsurface and bulk.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1987

AC impedance analysis of polypyrrole thin films

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

Penner, Reginald M.↗
NASA NTRS2004

Development of Ceramic Matrix Composites For High Temperature Applications

The microstructure and mechanical properties of carbon fiber reinforced silicon carbide (C/SiC) composites that incorporated molecular-level oxidation inhibitors designed to increase the material s high temperature durability were characterized. The viability of a fiber-level inhibitor incorporated as part of a layered interface system as well as a molecularly-integrated matrix-level oxidation inhibitor that is co-deposited with the SiC matrix during Chemical Vapor Infiltration (CVI) was determined. It was expected that the inhibitor would act as a glass former that will getter the oxygen and form a crack sealant to reduce further ingress of oxygen into the composite. Three composites were examined. Composite A was a baseline C(sub f)/SiC(sub m) composite that incorporated a approx. 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, and a CVI-derived SiC matrix. Composite B was a C(sub f)/SiC(sub m) composite incorporating a approx 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, a approx. 0.6 micron B4C fiber-level oxidation barrier coating, and a CVI-derived SiC matrix. Composite C was a C(sub f) /SiC(sub m) composite that incorporated a approx. 0.4 micron pyrolytic carbon (PyC) fiber coating to promote strength and toughness, a approx. 0.6 micron B4C fiber-level oxidation barrier coating, and a BxC-SiC oxidation-inhibited matrix produced by CVI co-deposition. All composites were reinforced with 10 plies of T-300 balanced plain weave carbon fabric with 3K tows at 12.5 ends per inch.

Heimann, Paula↗
NASA NTRS1998

The Oxidation of AlN in Dry and Wet Oxygen

The oxidation kinetics of AlN containing 3.5 wt% Y2O3 were studied by thermogravimetric analysis in dry oxygen and 10% H2O/balance oxygen at temperatures between 1000 and 1200 C for times between 48 and 100 h. The oxidation kinetics for AlN in dry oxygen were parabolic and of approximately the same magnitude and temperature dependence as other alumina forming materials. In this case, diffusion of oxygen and/or aluminum through the alumina scale is the rate limiting mechanism. The oxidation kinetics for AlN in wet oxygen were nearly linear and much more rapid than rates observed in dry oxygen. Numerous micropores were observed in the alumina formed on AIN in wet oxygen. These pores provide a fast path for oxygen transport. The linear kinetics observed in this case suggest that the interface reaction rate of AlN with wet oxygen is the oxidation rate limiting step.

Opila, Elizabeth↗
DOE OSTI2026

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Enhancing the Carbon Monoxide Oxidation Performance through Surface Defect Enrichment of Ceria-Based Supports for Platinum Catalyst

Effective synthesis and application of single-atom catalysts on supports lacking enough defects remain a significant challenge in environmental catalysis. Herein, we present a universal defect-enrichment strategy to increase the surface defects of CeO 2 -based supports through H 2 reduction pretreatment. The Pt catalysts supported by defective CeO 2 -based supports, including CeO 2 , CeZrO x , and CeO 2 /Al 2 O 3 (CA), exhibit much higher Pt dispersion and CO oxidation activity upon reduction activation compared to their counterpart catalysts without defect enrichment. Specifically, Pt is present as embedded single atoms on the CA support with enriched surface defects (CA-HD) based on which the highly active catalyst showing embedded Pt clusters (Pt C ) with the bottom layer of Pt atoms substituting the Ce cations in the CeO 2 surface lattice can be obtained through reduction activation. Embedded PtC can better facilitate CO adsorption and promote O 2 activation at Pt C –CeO 2 interfaces, thereby contributing to the superior low-temperature CO oxidation activity of the Pt/CA-HD catalyst after activation.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Pattern-enhanced Resonant Soft X-ray Scattering for Operando monitoring of electrochemical solid-liquid interfaces

Unveiling interfaces at sub-nanometer scales is essential for advancing the understanding of complex chemical transformations. However, characterizing solid-liquid interfaces with high dimensional sensitivity and temporal resolution remains challenging, due to their dynamic nature and inaccessibility by conventional probes. Here we present an approach, Pattern-enhanced Resonant Soft X-ray Scattering, to overcome the challenges. Rooted in a “sample-as-optics” philosophy, this technique utilizes precisely engineered line-grating nanopatterns to modulate near-field X-ray illumination, coherently enhancing scattering signals from the line-gratings. We implement the method using Ni line-grating nanopatterns in electrochemical water oxidation. The periodic nanostructures serve as diffractive optical elements to reveal the Ni oxidation gradients and structural dynamics at the electrode-electrolyte interfaces. Finite-element simulations corroborate the observed trends by modeling variations in compositions and structures during electrocatalysis. Through integrating advanced sample design with coherent wave nature of soft X-rays, our approach opens accessible pathways to operando exploring chemical evolution and sub-nanometer dimensional variations simultaneously in electrochemical systems. This non-destructive method is efficient and element-specific, making it valuable for probing chemical and dimensional dynamics with appropriate modeling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

Evidence from transmission electron microscopy for an oxynitride layer in oxidized Si3N4

Microstructural and energy dispersive spectrometry evidence is produced, from transmission electron microscopy, to show that a silicon oxynitride inner layer is produced by the oxidation of silicon nitride in dry oxygen at 1350 C as proposed by Tressler et al. (1989). However, details of the microstructures at the oxide/nitride interface do not agree entirely with the rest of the Tressler model for the oxidation of Si3N4.

Ogbuji, Linus U. J. T.↗
DOE OSTI2025

Exploring the Electrochemical Stability Window of an All-Solid-State Composite Cathode via a Novel Operando Tender XPS Setup

All-solid-state batteries (ASSBs) have the potential to provide greater energy density than conventional batteries based on liquid electrolytes. Here, an operando ASSB cell setup for tender X-ray photoelectron spectroscopy (XPS) was developed, and the interface of a Ni-rich layered transition metal oxide cathode active material (CAM) and an Li 6 PS 5 Cl (LPSCl) solid electrolyte (SE) was evaluated during initial charge/discharge cycles. After validating the cell performance against a conventional pouch cell operated at high compression, intermittent galvanostatic cycling was performed, and XPS data were recorded as a function of state of charge (SOC). Upon the initial charge of the cell to ≈3.3 V Li , the LPSCl appears to decompose into LiCl, Li 3 PS 4 , and polysulfides, whose amount gradually increases with potential. Upon further charge, at a potential higher than ≈3.8 V Li , initially, present sulfate and sulfite impurities decompose, and at ≈74% SOC (corresponding to a cathode potential of ≈4.10 V Li ), surface reconstruction of the CAM particles due to lattice oxygen release is detected. In addition, at potentials beyond ≈4.6 V Li , a decrease of the S 1s counts of the sum of the LPSCl, the thiophosphate, and polysulfide species suggests the formation of elemental sulfur that is lost via sublimation into the vacuum chamber.

25 ENERGY STORAGE↗
NASA NTRS1980

Study of the effects of gaseous environments on the hot corrosion of superalloy materials

The effect of the gaseous corrodent NaCl on the high temperature oxidation and sodium sulfate induced hot corrosion behavior of alumina formers, chromia formers, and the superalloy B-1900 was examined. Isothermal experiments were conducted at 900 C and 1050 C in air in the presence and absence of NaCl vapors. Microstructural changes in oxide morphology and increased rates of oxidation were observed when NaCl(g) was present. It is hypothesized that the accelerated rates of oxidation are the result of removal of aluminum from the scale substrate interface and the weakening of the scale substrate bonds. The aluminum removed was redeposited on the surfaces in the form of alumina whiskers. For the superalloy B-1900, alumina whiskers are also formed, and the alloy oxidizes at catastrophic rates. In the case of Ni-25Cr alloy, NaCl vapors interact with the scale depleting it of chromium.

Smeggil, J. G.↗
NASA NTRS1982

Electron loss study of the native oxide of tin

Using electron loss spectroscopy in combination with ion beam depth profiling, it has been established that the oxide of tin formed by electropolishing followed by room temperature aging is metal free and composed of a mixture of SnO2 and SnO. In a fresh oxide layer, the SnO2 is confined to the outer portion of the predominantly SnO oxide. In an aged oxide layer, SnO2 is present up to the oxide/metal interface with an ever decreasing concentration as the interface is approached.

Bevolo, A. J.↗
NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗
NASA NTRS1986

1986 Annual Conference on Nuclear and Space Radiation Effects, 23rd, Providence, RI, July 21-23, 1986, Proceedings

The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.

Ellis, Thomas D.↗