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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23

Interactions of atomic oxygen with material surfaces in low Earth orbit: Preliminary results from experiment A0114

The atomic oxygen experiment consisted of two trays (one-sixth of a Long Duration Exposure Facility (LDEF) tray each) of 64 one inch diameter solid samples. It was intended that the effects of atomic oxygen and solar ultraviolet irradiation on the surface properties of each material could be distinguished from each other and from the effects of aging. Sixteen of the samples were placed on a thermally isolated plate of highly polished aluminum, while the main plate was coated with the thermal control coating S13-GLO. Though the experiment was entirely passive, it was hoped that the effects of thermal activation might be observed, if present. The plates were expected to stabilize at temperatures differing by 20-30 C. The samples included thin films of metals Os, Ir, Pt, Ni, Mo, and Al coated onto silica optical flats, metal carbides (WC, SiC), solid carbons of various types, eight polymers, and some other coatings of various types. Analysis is essentially complete using stylus profilometry with high sensitivity Talystep and lower sensitivity Talysurf machines. Though the integrated fluence of O atoms on the LDEF was 30 times that of previous missions, etch depths of the polymers such as the polyimide Kapton show excellent agreement with extrapolations from previous flight data. However, some new effects were observed. We demonstrated on a previous experiment on STS-8 that profilometry of this kind can show steps of 50 A (for example those due to oxide film growth on metals) and this is now the preferred method for estimating etch depth (or mass loss) of erodible substances.

Gregory, John C.↗

Selective mode injection and observation for few-mode fiber optics

By etching the cladding along several millimeters of circular- or elliptical-core few-mode fiberoptics, access to the core is achieved and extremely pure modes can be injected. The same etching technique allows measurement of the modal purity at the far end of the fiber. Modal purities of -26 dB have been obtained. A holographic technique is also demonstrated that allows all the light of each mode to be focused to an independent spot.

Shaklan, Stuart↗

High performance etchant for thinning p(+)-InP and its application to p(+)n InP solar cell fabrication

An etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) is developed for thinning, after contacting, the p(+) emitter layer of p(+)n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min are obtained. After thinning the 0.6- to 2.5-micron thick p(+) InP layer down to 60-250 nm, specular surfaces are obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the resisual P-rich oxide after thinning the emitter layer provides surface passivation of p(+) InP surfaces and can also serve as a first-layer AR coating.

Faur, Maria↗

Quantum well, beam deflecting surface emitting lasers

This invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.

Kim, Jae H.↗

SiC device development for high temperature sensor applications

Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

Shor, J. S.↗

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Yap, Markus↗

Reactions of atomic oxygen /O(3P)/ with polymer films

The reactions of polymer films with oxygen atoms are reviewed focusing on laboratory tests on polybutadienes with different amount of 1,4 or 1,2 double bonds and their polyalkenamer homologues, polyimide (Kapton), and a series of polyolefines with increasing fluorine content. It is found that etch rates increase with decrease in -CH=CH- unsaturation, starting with 1,4 -polybutadiene and reaching the maximum rate with polyethylene or ethylene-propylene rubber. IN polybutadienes with both 1,4 and 1,2 double bonds, the rate of O(3P)-induced etching is lower the higher the 1,2 content. The reactions are confined to the polymer surface.

Golub, Morton A.↗

A 250 GHz planar low noise Schottky receiver

A planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230-280 GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The diode has a 1.21 micron anode diameter and a low parasitic capacitance due to the use of an etched surface channel. The antenna-mixer results in a measured DSB conversion loss and noise temperature at 258 GHz of 7.2 dB +/- 0.5 dB and 1310 K +/- 70 K, respectively, at room temperature. The design is compatible with SIS mixers, and the low cost of fabrication and simplicity makes it ideal for submillimeter-wave imaging arrays requiring a 10-20 percent bandwidth.

Ali-Ahmad, Walid Y.↗

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

Steckl, A. J.↗

Thin film diamond microstructure applications

Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

Roppel, T.↗

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗

Tambo Quemado: Extraordinary concentrations of REE and refractory trace elements caused by artificial heating

Buchwald examined samples of the IIIB iron Tambo Quemado (TAMQ) cut from the 130 kg main mass. He determined it had been artificially heated, at some time prior to being reported, in an attempt to obtain metal from it. Although the Widmanstatten structure appears relatively unaffected under macroscopic examination, microscopic study of etched sections reveals the effect of the heating. Taenite and plessite area boundaries are indistinct due to high temperature diffusion. Schreibersite, once present in significant amounts, has been melted. Schreibersites in the interior have resolidified in fine-grained eutectic textures surrounded by dark-etching metal rims supersaturated with phosphorus. Buchwald states that phosphate minerals were probably present originally, because graftonite, and its polymorph sarcopside (both essentially Fe3(PO4)2), are common in irons of the IIIB groups. Based on his metallographic study Buchwald estimates TAMQ was heated to 1000 C for about one hour. An interior sample from TAMQ was examined in order to determine what effect this unintended heating 'experiment' had upon the phosphate phases.

Olsen, E.↗

MANN: A program to transfer designs for diffractive optical elements to a MANN photolithographic mask generator

There are two basic areas of interest for diffractive optics. In the first, the property of wavefront division is exploited for achieving optical fanout, analogous to the more familiar electrical fanout of electronic circuitry. The basic problem here is that when using a simple uniform diffraction grating the energy input is divided unevenly among the output beams. The other area of interest is the use of diffractive elements to replace or supplement standard refractive elements such as lenses. Again, local grating variations can be used to control the amount of bending imparted to optical rays, and the efficiency of the diffractive element will depend on how closely the element can be matched to the design requirements. In general, production restrictions limit how closely the element approaches the design, and for the common case of photolithographic production, a series of binary masks is required to achieve high efficiency. The actual design process is much more involved than in the case of elements for optical fanout, as the desired phase of the optical wavefront over some reference plane must be specified and the phase alteration to be introduced at each point by the diffraction element must be known. This generally requires the utilization of a standard optical design program. Two approaches are possible. In the first approach, the diffractive element is treated as a special type of lens and the ordinary optical design equations are used. Optical design programs tend to follow a second approach, namely, using the equations of optical interference derived from holographic theory and then allowing the introduction of phase front corrections in the form of polynomial equations. By using either of these two methods, diffractive elements can be used not only to compensate for distortions such as chromatic or spherical aberration, but also to perform the work of a variety of other optical elements such as null correctors, beam shapers, etc. The main focus of the project described in this report is how the design information from the lens design program is incorporated into the photolithographic process. It is shown that the MANN program, a photolithographic mask generator, fills the need for a link between lens design programs and mask generation controllers.The generated masks can be used to expose a resist-coated substrate which is etched and then must be re-coated, re-exposed, and re-etched for making copies, just as in the electronics industry.

Matthys, Donald R.↗

High energy collimating fine grids

The objective of this project was to demonstrate the fabrication of extremely tight tolerance collimating grids using a high-Z material, specifically tungsten. The approach taken was to fabricate grids by a replication method involving the coating of a silicon grid substrate with tungsten by chemical vapor deposition (CVD). A negative of the desired grid structure was fabricated in silicon using highly wafering techniques developed for the semiconductor industry and capable of producing the required tolerances. Using diamond wafering blades, a network of accurately spaced slots was machined into a single-crystal silicon surface. These slots were then filled with tungsten by CVD, via the hydrogen reduction of tungsten hexafluoride. Following tungsten deposition, the silicon negative was etched away to leave the tungsten collimating grid structure. The project was divided into five tasks: (1) identify materials of construction for the replica and final collimating grid structures; (2) identify and implement a micromachining technique for manufacturing the negative collimator replicas (performed by NASA/JPL); (3) develop a CVD technique and processing parameters suitable for the complete tungsten densification of the collimator replicas; (4) develop a chemical etching technique for the removal of the collimator replicas after the tungsten deposition process; and (5) fabricate and deliver tungsten collimating grid specimens.

Arrieta, Victor M.↗

LEO degradation of graphite and carbon-based composites aboard Space Shuttle Flight STS-46

Six different types of carbon and carbon-boron nitride composites were exposed to low Earth orbit aboard Space Shuttle flight STS-46. The samples received a nominal atomic oxygen fluence of 2.2 x 10(exp 20) atoms/sq cm in 42 hours of exposure. Pyrolytic graphite and highly oriented pyrolytic graphite showed significant degradation, and the measured erosion yield was within a factor of two of published values. The erosion yield of pyrolytic boron nitride was found to be 2.6 x 10(exp 26) cu cm/atom in plasma asher exposure, over 42 times lower than that of pyrolytic graphite. This low erosion yield makes graphite plus boron nitride mixtures quite resistant to low Earth orbit exposure. Evidence suggests that the graphitic component was preferentially etched, leaving the surface boron nitride rich. Degradation resistance increases with boron nitride composition. Carbon fiber/carbon composites degraded in low Earth orbit, and the carbon pitch binder was found to etch more easily than the graphite fibers which have much higher degradation resistance.

Spady, Blaine R.↗

Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

Tu, Juliana↗

Effect of Composite Fabrication on the Strength of Single Crystal Al2O3 Fibers in Two Fe-Base Alloy Composites

Continuous single-crystal Al2O3 fibers have been incorporated into a variety of metal and intermetallic matrices and the results have consistently indicated that the fiber strength had been reduced by 32 to 50% during processing. Two iron-based alloys, FeNiCoCrAl and FeAlVCMn, were chosen as matrices for Al2O3 fiber reinforced metal matrix composites (MMC) with the goal of maintaining Al2O3 fiber strength after composite processing. The feasibility of Al2O3/FeNiCoCrAl and Al2O3/FeAlVCMn composite systems for high temperature applications were assessed in terms of fiber-matrix chemical compatibility, interfacial bond strength, and composite tensile properties. The strength of etched-out fibers was significantly improved by choosing matrices containing less reactive elements. The ultimate tensile strength (UTS) values of the composites could generally be predicted with existing models using the strength of etched-out fibers. However, the UTS of the composites were less than desired due to a low fiber Weibull modulus. Acoustic emission analysis during tensile testing was a useful tool for determining the efficiency of the fibers in the composite and for determining the failure mechanism of the composites.

Draper, Susan L.↗

Method for Surface Texturing Titanium Products

The present invention teaches a method of producing a textured surface upon an arbitrarily configured titanium or titanium alloy object for the purpose of improving bonding between the object and other materials such as polymer matrix composites and/or human bone for the direct in-growth of orthopaedic implants. The titanium or titanium alloy object is placed in an electrolytic cell having an ultrasonically agitated solution of sodium chloride therein whereby a pattern of uniform "pock mark" like pores or cavities are produced upon the object's surface. The process is very cost effective compared to other methods of producing rough surfaces on titanium and titanium alloy components. The surface textures produced by the present invention are etched directly into the parent metal at discrete sites separated by areas unaffected by the etching process. Bonding materials to such surface textures on titanium or titanium alloy can thus support a shear load even if adhesion of the bonding material is poor.

Banks, Bruce A.↗