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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Crystal phases of charged interlayer excitons in van der Waals heterostructures

Throughout the years, strongly correlated coherent states of excitons have been the subject of intense theoretical and experimental studies. This topic has recently boomed due to new emerging quantum materials such as van der Waals (vdW) bound atomically thin layers of transition metal dichalcogenides (TMDs). We analyze the collective properties of charged interlayer excitons observed recently in bilayer TMD heterostructures. We predict strongly correlated phases—crystal and Wigner crystal—that can be selectively realized with TMD bilayers of properly chosen electron-hole effective masses by just varying their interlayer separation distance. Our results can be used for nonlinear coherent control, charge transport and spinoptronics application development with quantum vdW heterostuctures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Correlation control of the Mott transition in LaTiO 3 /SrTiO 3 heterostructures

The Mott metal-insulator transition arises from electron-electron interactions determined by the ratio of Coulomb to kinetic energy scales (U/t). While temperature, pressure, and doping can induce Mott transitions, direct control of U in solid-state systems remains largely unexplored, particularly in the inhomogeneous environments of emerging neuromorphic devices, where conductive filaments create complex gradients of local properties. Here we show that interface-induced screening can continuously tune the electron-electron interaction strength U to drive an isothermal Mott transition. Using thickness-graded LaTiO3/SrTiO3 heterostructures, we used diffraction and photoemission spectroscopy to reveal a continuous, isothermal quantum phase transition from a Fermi liquid quasiparticle with incoherent excitations to a Mott insulator with Hubbard bands. The primary determinant of the transition is the enhanced local screening environment, which directly influences the interaction strength U, driving the system metallic. This demonstrates that interface engineering of the local screening environment provides a promising approach to manipulate Mott physics through correlation control, beyond traditional bandwidth or filling approaches.

Electronic and spintronic devices↗
DOE OSTI2025

Gradient-based optimization of complex nanoparticle heterostructures enabled by deep learning on heterogeneous graphs

Applications of deep learning (DL) to design nanomaterials are hampered by a lack of suitable data representations and training data. Here, in this study, we report efforts to overcome these limitations and leverage DL to optimize the nonlinear optical properties of core–shell upconverting nanoparticles (UCNPs). UCNPs, which have applications in fields such as biosensing, super-resolution microscopy and three-dimensional printing, can emit visible and ultraviolet light from near-infrared excitations. We report a large-scale dataset of UCNP emission spectra based on accurate but expensive kinetic Monte Carlo simulations (N > 6,000) and use these data to train a heterogeneous graph neural network using a physically motivated representation of UCNP nanostructure. Applying gradient-based optimization on the trained graph neural network, we identify structures with 6.5× higher predicted emission under 800-nm illumination than any UCNP in our training set. Our work reveals design principles for UCNP heterostructures and presents a roadmap for DL-based inverse design of nanomaterials.

Sivonxay, Eric [Lawrence Berkeley National Laborat↗
DOE OSTI2026

Solid-state thermometry via ionic–electronic coupling in two-dimensional heterostructures

The coupling of ionic and electronic transport in solid-state systems offers new opportunities for realizing compact, energy-efficient sensing technologies, yet practical implementations remain limited. In this article, we introduce a two-dimensional iontronic platform based on field-effect transistors that integrate monolayer MoS 2 channels with van der Waals bimetallic thiophosphates ( AB P 2 X 6 , A = Li, Cu, Ag and so on; B = In, Sc and so on; and X = S and Se) as ionic gate dielectrics to realize on-chip thermometry. Specifically, we exploit thermally activated ion migration within the gate dielectric leading to conductance modulation in the MoS 2 channel for temperature sensing. We achieve ~1–2 °C resolution, fast electronic readout and subpicojoule energy consumption in an ultracompact footprint (~1 µm 2 ). Beyond thermometry, these results establish bimetallic thiophosphates as a versatile platform for solid-state iontronics and broaden the functional design space of van der Waals heterostructures for sensing, actuation and adaptive electronics.

42 ENGINEERING↗
DOE OSTI2019

Molecular conducting magnetic heterostructures

Building molecular conducting magnets has been of considerable interest due to their metallic transport and magnetic properties. Conjugated aniline anions and transition-metal cations are recognized to synthesize such π–d interaction frameworks. Here, an interfacial assembly of quasi-two-dimensional aniline heterojunction frameworks is developed, which consists of a proton-aniline conducting layer (conductivity of 9.2 × 10 2 S cm -1 ) and a transition metal–aniline magnetic layer. The two-dimensional aniline coordination framework with pronounced π–d interactions is indispensable for obtaining ordered spin states and metallic transport conductivity. We apply optical and Raman spectroscopy to study the interactions between the metal cations and nitrogen atoms in the aniline chains. The bilayer heterostructure maintains a high conductivity of 3.5 × 10 2 S cm -1 and increased magnetization, while the coupling of metallic conducting and magnetic layers leads to an enhanced magnetoconductance of 0.4% under a magnetic field of 70 kOe.

36 MATERIALS SCIENCE↗
DOE OSTI2020

GaSb-based heterostructure with buried vacuum pocket photonic crystal layer

The vacuum pocket retaining molecular beam epitaxial regrowth of the nano-patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 μm emitting laser heterostructure. The photonic dispersion determined from angle-resolved electroluminescence experiment showed four well-resolved bands corresponding to the model predictions for the square lattice. The single-mode lasing near 2 μm has been observed at the temperature corresponding to the alignment of the photonic crystal band-edge states and the quantum well gain peak. The reference devices without the photonic crystal layer emitted trivial spectra and did not lase at any temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Long-lived charge separation in two-dimensional ligand-perovskite heterostructures

Rational design of heterojunctions using nanostructured materials is a useful strategy for achieving efficient interfacial charge separation in photovoltaics. Heterojunctions can be constructed between organic ligands and inorganic layer in two-dimensional (2D) perovskites, taking advantage of their highly programmable structures. We investigate electron and hole transfer at the interface between the thiophene-based semiconducting ligands and the lead halide inorganic sublattices using time-resolved photoluminescence and transient reflection spectroscopy in single 2D perovskite crystals. Here, these measurements demonstrate charge transfer time of ~ 10 ps and long-lived charge-separated state over the nanosecond timescale in 2D ligand-perovskite heterostructures. The efficient charge transfer processes with slow charge recombination suggest the potential for improving exciton dissociation and charge transport in 2D perovskite solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Heterostructure design to achieve high quality, high density GaAs 2D electron system with g -factor tending to zero

Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé g-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value g ≃ -0.44 to zero and even to positive values under sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with g = 0, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here, we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design.

Physics↗
DOE OSTI2022

Ferroelectrics and photovoltaics in endohedral fullerenes-based van der Waals heterostructures

Using the density functional theory calculations, we studied the ferroelectric, electronic, and optical properties of a series of bias-controllable endohedral fullerene molecules (TM@C28, TM = Ti-Ni). One important finding is that Cr@C28 has a large electric dipole moment and an appropriate bandgap (∼1.2 eV). By sandwiching Cr@C28 molecules between two graphene or transition metal dichalcogenide layers, the heterostructures may combine strong ferroelectricity and excellent optical properties. This paves the way for the development of two-dimensional van der Waals ferroelectric-photovoltaic materials.

Li, Jie (ORCID:0000000237334587)↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Polarization-induced carriers play an important role in achieving high electrical conductivity in ultrawide bandgap semiconductor AlGaN, which is essential for various applications ranging from radio frequency and power electronics to deep UV photonics. Despite significant scientific and technological interest, studies on polarization-induced carriers in N-polar AlGaN are rare. We report the observation and properties of polarization-induced two-dimensional electron gases (2DEGs) in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates by systematically varying the Al content in the 8 nm top layers from x = 0 to x = 0.6, spanning energy bandgaps from 3.56 to 4.77 eV. The 2DEG density drops monotonically with increasing Al content, from 3.8 × 1013/cm2 in the GaN channel, down to no measurable conductivity for x = 0.6. Alloy scattering limits the 2DEG mobility to below 50 cm2/V s for x = 0.49. These results provide valuable insights for designing N-polar AlGaN channel high electron mobility transistors on AlN for extreme electronics at high voltages and high temperatures, and for UV photonic devices.

Physics↗
DOE OSTI2023

Nanorod length-dependent photodriven H2 production in 1D CdS–Pt heterostructures

Colloidal quantum confined semiconductor-metal heterostructures are promising candidates for solar energy conversion because their light absorbing semiconductor and catalytic components can be independently tuned and optimized. Although the light-to-hydrogen efficiencies of such systems have shown interesting dependences on the morphologies of the semiconductor and metal domains, the mechanisms of such dependences are poorly understood. Here, we use Pt tipped 0D CdS quantum dots (with ∼4.6 nm diameter) and 1D CdS nanorods (of ∼13.8, 27.8, 66.6, and 88.9 nm average rod lengths) as a model system to study the distance-dependence of charge separation and charge recombination times and their impacts on photo-driven H2 production. The H2 generation quantum efficiency increases from 0.2% ± 0.0% in quantum dots to 28.9% ± 0.4% at a rod length of 28 nm and shows negligible changes at longer rod lengths. The half-life time of electron transfer from CdS to Pt increases monotonically with rod length, from 0.7 ± 0.1 in quantum dots to 170.2 ± 29.5 ps in the longest rods, corresponding to a slight decrease in electron transfer quantum efficiency from 92% to 81%. The amplitude-weighted average lifetime of charge recombination of the electron in Pt with the hole in CdS increases from 4.7 ± 0.4 µs in quantum dots to 149 ± 34 µs in 28 nm nanorods, and the lifetime does not increase further in longer rods, resembling the trend in the observed H2 generation quantum efficiency. Our result suggests that the competition of the charge recombination process with the hole removal by the sacrificial electron donor plays a dominant role in the observed nanorod length dependent overall light driven H2 generation quantum efficiency.

Chemistry↗