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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS2009

NASA Tech Briefs, September 2009

opics covered include: Filtering Water by Use of Ultrasonically Vibrated Nanotubes; Computer Code for Nanostructure Simulation; Functionalizing CNTs for Making Epoxy/CNT Composites; Improvements in Production of Single-Walled Carbon Nanotubes; Progress Toward Sequestering Carbon Nanotubes in PmPV; Two-Stage Variable Sample-Rate Conversion System; Estimating Transmitted-Signal Phase Variations for Uplink Array Antennas; Board Saver for Use with Developmental FPGAs; Circuit for Driving Piezoelectric Transducers; Digital Synchronizer without Metastability; Compact, Low-Overhead, MIL-STD-1553B Controller; Parallel-Processing CMOS Circuitry for M-QAM and 8PSK TCM; Differential InP HEMT MMIC Amplifiers Embedded in Waveguides; Improved Aerogel Vacuum Thermal Insulation; Fluoroester Co-Solvents for Low-Temperature Li+ Cells; Using Volcanic Ash to Remove Dissolved Uranium and Lead; High-Efficiency Artificial Photosynthesis Using a Novel Alkaline Membrane Cell; Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays; Micro-Horn Arrays for Ultrasonic Impedance Matching; Improved Controller for a Three-Axis Piezoelectric Stage; Nano-Pervaporation Membrane with Heat Exchanger Generates Medical-Grade Water; Micro-Organ Devices; Nonlinear Thermal Compensators for WGM Resonators; Dynamic Self-Locking of an OEO Containing a VCSEL; Internal Water Vapor Photoacoustic Calibration; Mid-Infrared Reflectance Imaging of Thermal-Barrier Coatings; Improving the Visible and Infrared Contrast Ratio of Microshutter Arrays; Improved Scanners for Microscopic Hyperspectral Imaging; Rate-Compatible LDPC Codes with Linear Minimum Distance; PrimeSupplier Cross-Program Impact Analysis and Supplier Stability Indicator Simulation Model; Integrated Planning for Telepresence With Time Delays; Minimizing Input-to-Output Latency in Virtual Environment; Battery Cell Voltage Sensing and Balancing Using Addressable Transformers; Gaussian and Lognormal Models of Hurricane Gust Factors; Simulation of Attitude and Trajectory Dynamics and Control of Multiple Spacecraft; Integrated Modeling of Spacecraft Touch-and-Go Sampling; Spacecraft Station-Keeping Trajectory and Mission Design Tools; Efficient Model-Based Diagnosis Engine; and DSN Simulator.

Source record↗
DOE OSTI2022

Perovskite superlattices with efficient carrier dynamics

Compared with their three-dimensional (3D) counterparts, low-dimensional metal halide perovskites (2D and quasi-2D; B 2 A n-1 M n X 3n+1 , such as B = R-NH 3 + , A = HC(NH 2 ) 2 + , Cs + ; M = Pb 2+ , Sn 2+ ; X = Cl - , Br - , I - ) with periodic inorganic-organic structures have shown promising stability and hysteresis-free electrical performance. However, their unique multiple-quantum-well structure limits the device efficiencies because of the grain boundaries and randomly oriented quantum wells in polycrystals. In single crystals, the carrier transport through the thickness direction is hindered by the layered insulating organic spacers. Furthermore, the strong quantum confinement from the organic spacers limits the generation and transport of free carriers. Also, lead-free metal halide perovskites have been developed but their device performance is limited by their low crystallinity and structural instability 11 . Here, in this paper, we report a low-dimensional metal halide perovskite BA 2 MA n-1 Sn n I 3n+1 (BA, butylammonium; MA, methylammonium; n = 1, 3, 5) superlattice by chemical epitaxy. The inorganic slabs are aligned vertical to the substrate and interconnected in a criss-cross 2D network parallel to the substrate, leading to efficient carrier transport in three dimensions. A lattice-mismatched substrate compresses the organic spacers, which weakens the quantum confinement. The performance of a superlattice solar cell has been certified under the quasi-steady state, showing a stable 12.36% photoelectric conversion efficiency. Moreover, an intraband exciton relaxation process may have yielded an unusually high open-circuit voltage (V OC ).

36 MATERIALS SCIENCE↗
DOE OSTI2026

Theory and simulation of gap distance transitions in planar magnetically insulated transmission lines

Magnetically insulated transmission lines (MITLs) are critical components for efficiently transporting power from pulsed power sources to a diverse range of loads, including magneto-inertial confinement fusion and radiation production. This study investigates the behavior of planar MITLs, taking into account the source voltage and source and load impedances, using two-dimensional theory and simulations. Self-limited behavior, where the MITL operating impedance (voltage divided by current) is insensitive to the value of load impedance, is extended to small-to-large gap distance MITL transitions. Load-limited behavior, in which the load impedance is below the self-limited impedance, causes the MITL operating impedance to adjust to match the load impedance and can be extended to describe large-to-small transitions. In both cases, the operating impedance of the larger MITL section changes to match the self-limited operating impedance of the smaller section. This behavior extends to multiple transitions and to both low and high impedance loads. Assuming equilibration occurs (pulse duration larger than MITL transit time), the entire MITL operating impedance becomes the self-limited impedance of the smallest-gap MITL section or the load impedance, whichever is lower.

Darr, Adam M. [Sandia National Laboratories (SNL-N↗
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
NASA NTRS2008

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

Neudeck, Philip G.↗
NASA NTRS1977

Measurement of insulation integrity of IUE camera tube facsimiles by partial discharges method and diffusion of gases through various silicone rubbers

Several dummy tubes imitating the IUE Camera System design were encapsulated with Solithane 2, Conathane EN-11, Green and Black Hysols and SMRD 432. Various flaws were purposefully placed in some of these. Partial discharge testing in vacuum under direct voltage conditions was carried once a week for 12 weeks, 15 kv dc being applied during normal working hours for 40 hours duration per week. None of the units showed much damage during this time judging by the P.D. energy histograms. A more complete mathematical presentation is given on diffusion and permeation than previously. Measurements of diffusion constants for various silicone rubbers are carried out by the Time-Lag method and compared to other determinations in the literature. Calculations of the time required for diffusion through a thick wall are demonstrated in the long time approximation and for dimensions pertaining to void and wall sizes of a delamination problem in the LANDSAT-C vidicon tubes. An actual delaminated LANDSAT-C tube and some facsimiles are immersed in vacuum for long periods and tested for catastrophic breakdown due to diffusion of gas, by application of high voltage.

Bever, R. S.↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2023

Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances

Abstract Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with conventional energy‐conversion technologies, a thermoelectric material must possess the properties of both an electrical conductor and a thermal insulator. However, these properties are normally mutually exclusive because of the interconnection between scattering mechanisms for charge carriers and phonons. Recent theoretical investigations on sub‐device scales have revealed that nanopillars attached to a membrane exhibit a multitude of local phonon resonances, spanning the full spectrum, that couple with the heat‐carrying phonons in the membrane and cause a reduction in the in‐plane thermal conductivity, with no expected change in the electrical properties because the nanopillars are outside the pathway of voltage generation and charge transport. Here this effect is demonstrated experimentally for the first time by investigating device‐scale suspended silicon membranes with GaN nanopillars grown on the surface. The nanopillars cause up to 21% reduction in the thermal conductivity while the power factor remains unaffected, thus demonstrating an unprecedented decoupling in the semiconductor's thermoelectric properties. The measured thermal conductivity behavior for coalesced nanopillars and corresponding lattice‐dynamics calculations provide evidence that the reductions are mechanistically tied to the phonon resonances. This finding paves the way for high‐efficiency solid‐state energy recovery and cooling.

Spann, Bryan T.↗
DOE OSTI2024

Recent Progress of JT-60SA Project toward Plasma Operation

Superconducting tokamak JT-60SA plays an essential role in fusion research and development by supporting and complementing ITER project, providing directions to the DEMO design activity and fostering next generation scientists and engineers. Since the incident of the Equilibrium Field coil #1 during the Integrated Commissioning (IC) in March 2021, both EU and JA Implementing agencies (IAs) have examined how to ensure safety operation of JT-60SA by mitigating the risk of possible discharge occurrence inside the cryostat. Based on the experience of the Global Paschen tests, the IAs have established a strategy of risk mitigation measures, which is a combination of (i) reinforcement of insulation, (ii) avoiding unnecessary voltage application to the coil systems and (iii) immediate de-energization of the coils when deteriorated vacuum condition is detected. Thanks to the considerable efforts of the Integrated Project Team (IPT) members, the IC restarted in May 2023. After the confirmation of superconducting state of coil systems (TF, EF and CS), the coil energization test and the plasma operation (OP-1) starts. The first plasma was successfully achieved on 23 October 2023 with a limited value of applied voltage and current to the coils. The plasma configuration control will be also confirmed with low plasma current and low auxiliary heating power conditions. Based on the IO-F4E-QST collaboration, activities of JT-60SA have been shared with the IO and provided an important lesson learned for ITER assembly and commissioning, and will provide an outstanding contribution to fusion research at large. After OP-1, Maintenance & Enhancement phase 1 (M/E-1) starts from January 2024, in which in-vessel components are installed, and heating system and diagnostic system are extensively upgraded to allow high power heating experiment planned in OP-2. In order to make the best use of JT-60SA, newly organized JT-60SA experiment team will refine the research plan in the future high heating power operation phase.

Broader Approach activities↗
DOE OSTI2025

Efficient Measurement of Length Distribution of 1D Nanoparticles in Solution via Optical Polarimetry

The efficient measurement of the length distribution of nanotubes, nanowires, and other one-dimensional (1D) nanoparticles in solution is important to enable their incorporation into materials and devices and to optimize their processing for properties of interest, such as thermal/electrical conductivity or mechanical strength, in suspensions and composites. We report an electric-field (E-field)-assisted optical-polarimetry technique to measure the length distribution of ensembles of high-aspect-ratio particles in dilute suspension. The degree of alignment of polarizable 1D particles suspended in a fluid under Brownian motion explicitly depends on the E-field strength and the particle length. We show that it is possible to extract the length distribution of 1D nanoparticles suspended in an insulating fluid by applying a range of E-fields and using optical polarimetry to measure the corresponding alignment order parameter. Notably, the method is relatively insensitive to the diameter of the 1D particles, which can be poorly known or vary within a sample. The technique is validated with silver nanowires and carbon nanotubes of known lengths, as well as polymer-depletion-length-separated single-wall carbon nanotube samples with length distributions independently measured with analytical ultracentrifugation. Finally, we demonstrate the ability of the optical-polarimetry technique to quantify changes in the length distribution of ultranarrow, sub-nanometer-diameter single-wall carbon nanotubes under different types and durations of ultrasonication. Within its range of applicability (polarizable 1D nanoparticles in the 0.5 to 15 μm length range, constrained by the voltage stability of the media and the suspended particles), the E-field-assisted optical-polarimetry method is a particularly efficient and accurate method to measure the length distribution of nanowires and nanotubes in suspension.

1D nanoparticles↗
NASA NTRS1989

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Choi, Sang H.↗
NASA NTRS1996

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic lattice-matched 0.74 eV InGaAs thermophotovoltaic (TPV) power converter under 980 C blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 cm(exp 2) chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. The power efficiency of this TPV device is 16% for that part of the blackbody spectrum above the material bandgap. The device is shown to deliver about 1 watt of output power when driven with enough light. This is the first report of such a multijunction TPV device. This is not a traditional tandem cell in which the junctions are stacked vertically. Eight 1 mm long by 1 cm wide junctions are laterally connected across the device area. This multijunction design has the potential for lower I(exp 2)R power loss since the smaller PN junction area limits the current to one eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(exp 2)R loss, analogous to the way power utilities avoid I(exp 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗
DOE OSTI2020

Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging

TPG-core IMS concept was jointly explored in this study. Integrating high thermally conductive TPG graphite core into IMS is expected to simultaneously achieve high thermal conductivity from TPG and electrical functionalities from IMS. Nearly 2x thermal conductivity and 30% weight saving was demonstrated on TPG-core IMS compared to conventional Cu-core IMS. Significant junction temperature reduction (11°C) in steady state and power cycling was revealed by the thermal analysis as the result of improved thermal spreading in plane and through the thickness. The study also proved the manufacturability and compatibility of this TPG-core IMS structure to the existing IMS production and power module assembling. Finally, the integration of TPG and IMS paves a new packaging route to increase heat load, improve reliability, simplify module design and reduce assembling cost and number of steps.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electron generation and multiplication at the initial stage of nanosecond breakdown in water

Electrical breakdown of liquid dielectrics under nanosecond pulsed high voltage has been investigated extensively in the last decade. Prior studies have focused on either experimental characterization of the breakdown process and discharge plasma or formulation/verification of the electrostrictive cavitation mechanism of the breakdown initiation. There remain knowledge gaps toward a clear physical picture of how the first plasma is generated in a region saturated by nanoscale cavities created by electrostrictive forces in inhomogeneous fields at the nanosecond timescale. Initial plasma results from the multiplication of primary electrons that gain energy collisionlessly in the cavities to cause collisional ionization of water molecules on the cavity walls. This paper quantitatively discusses the possible sources of primary electrons that seed the plasma discharge. Electron detachment from hydroxide is shown to be the most probable and sustainable electron source. Using numerical modeling, this study demonstrates the plausibility of an electron multiplication mechanism involving two neighboring cavities. The drift of hydrated electrons from one cavity to the next is the rate-limiting step and sets the minimum electric field requirement. Furthermore, this work will inform subsequent experimental studies and have implications in various applications such as plasma sources in biomedical applications, cavitation study, and insulation of pulsed power equipment.

42 ENGINEERING↗
NASA NTRS2003

Brayton Power Conversion Unit Tested: Provides a Path to Future High-Power Electric Propulsion Missions

Closed-Brayton-cycle conversion technology has been identified as an excellent candidate for nuclear electric propulsion (NEP) power conversion systems. Advantages include high efficiency, long life, and high power density for power levels from about 10 kWe to 1 MWe, and beyond. An additional benefit for Brayton is the potential for the alternator to deliver very high voltage as required by the electric thrusters, minimizing the mass and power losses associated with the power management and distribution (PMAD). To accelerate Brayton technology development for NEP, the NASA Glenn Research Center is developing a low-power NEP power systems testbed that utilizes an existing 2- kWe Brayton power conversion unit (PCU) from previous solar dynamic technology efforts. The PCU includes a turboalternator, a recuperator, and a gas cooler connected by gas ducts. The rotating assembly is supported by gas foil bearings and consists of a turbine, a compressor, a thrust rotor, and an alternator on a single shaft. The alternator produces alternating-current power that is rectified to 120-V direct-current power by the PMAD unit. The NEP power systems testbed will be utilized to conduct future investigations of operational control methods, high-voltage PMAD, electric thruster interactions, and advanced heat rejection techniques. The PCU was tested in Glenn s Vacuum Facility 6. The Brayton PCU was modified from its original solar dynamic configuration by the removal of the heat receiver and retrofitting of the electrical resistance gas heater to simulate the thermal input of a steady-state nuclear source. Then, the Brayton PCU was installed in the 3-m test port of Vacuum Facility 6, as shown. A series of tests were performed between June and August of 2002 that resulted in a total PCU operational time of about 24 hr. An initial test sequence on June 17 determined that the reconfigured unit was fully operational. Ensuing tests provided the operational data needed to characterize PCU performance over its full operating range. The primary test variables used in operating the Brayton PCU were heater input power and rotor speed. Testing demonstrated a maximum steady-state alternating-current power output of 1835 W at a gas heater power of 9000 W and a rotor speed of 52000 rpm. The corresponding measured turbine inlet gas temperature was 1076 K, and the compressor inlet gas temperature was 282 K. When insulation losses from the gas heater were neglected, the Brayton cycle efficiency for the maximum power point was calculated to be 24 percent. The net direct-current power output was 1750 W, indicating a PMAD efficiency of about 95 percent.

Mason, Lee S.↗
NASA NTRS2009

Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature Environments

Electronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing it to a total of 12 cycles between -195 C and +250 C. Following the cycling activity, measurements were performed again at the test temperatures of -195 C, +21 C, and +250 C.

Patterson, Richard↗