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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23

Structure, Hydrodynamics, and Phase Transition of Freely Suspended Liquid Crystals

Smectic liquid crystals are phases of rod shaped molecules organized into one dimensionally (1D) periodic arrays of layers, each layer being between one and two molecular lengths thick. In the least ordered smectic phases, the smectics A and C, each layer is a two dimensional (2D) liquid. Additionally there are a variety of more ordered smectic phases having hexatic short range translational order or 2D crystalline quasi long range translational order within the layers. The inherent fluid-layer structure and low vapor pressure of smectic liquid crystals enable the long term stabilization of freely suspended, single component, layered fluid films as thin as 30A, a single molecular layer. The layering forces the films to be an integral number of smectic layers thick, quantizing their thickness in layer units and forcing a film of a particular number of layers to be physically homogeneous with respect to its layer structure over its entire area. Optical reflectivity enables the precise determination of the number of layers. These ultrathin freely suspended liquid crystal films are structures of fundamental interest in condensed matter and fluid physics. They are the thinnest known stable condensed phase fluid structures and have the largest surface-to-volume ratio of any stable fluid preparation, making them ideal for the study of the effects of reduced dimensionality on phase behavior and on fluctuation and interface phenomena. Their low vapor pressure and quantized thickness enable the effective use of microgravity to extend the study of basic capillary phenomena to ultrathin fluid films. Freely suspended films have been a wellspring of new liquid crystal physics. They have been used to provide unique experimental conditions for the study of condensed phase transitions in two dimensions. They are the only system in which the hexatic has been unambiguously identified as a phase of matter, and the only physical system in which fluctuations of a 2D XY system and Kosterlitz Thouless phase transition has been observed and 2D XY quasi long range order verified. Smectic films have enabled the precise determination of smectic layer electron density and positional fluctuation profile and have been used to show that the interlayer interactions in anti-ferroelectric tilted smectics do not extend significantly beyond nearest neighbors. The interactions which are operative in liquid crystals are generally weak in comparison to those in crystalline phases, leading to the facile manipulation of the order in liquid crystals by external agents such as applied fields and surfaces. Effects arising from weak ordering are significantly enhanced in ultrathin free films and filaments wherein the intermolecular coupling is effectively reduced by loss of neighbors. Over the past four years this research, which we now detail, has produced a host of exciting new discoveries and unexpected results, maintaining the position of the study of freely suspended liquid crystal structures as one of most exciting and fruitful areas of complex fluid physics. In addition, several potentially interesting microgravity free film experiments have been identified.

Clark, Noel A.↗

High Temperature Semiconductor Process

A sputtering deposition system capable of depositing large areas of high temperature superconducting materials was developed by CVC Products, Inc. with the support of the Jet Propulsion Laboratory SBIR (Small Business Innovative Research) program. The system was devleoped for NASA to produce high quality films of high temperature superconducting material for microwave communication system components. The system is also being used to deposit ferroelectric material for capacitors and the development of new electro-optical materials.2002103899

Source record↗

Multiscale electric-field imaging of polarization vortex structures in PbTiO 3 /SrTiO 3 superlattices

In ferroelectric heterostructures, the interaction between intrinsic polarization and the electric field generates a rich set of localized electrical properties. The local electric field is determined by several connected factors, including the charge distribution of individual unit cells, the interfacial electromechanical boundary conditions, and chemical composition of the interfaces. However, especially in ferroelectric perovskites, a complete description of the local electric field across micro-, nano-, and atomic-length scales is missing. Here, by applying four-dimensional scanning transmission electron microscopy (4D STEM) with multiple probe sizes matching the size of structural features, we directly image the electric field of polarization vortices in (PbTiO 3 ) 16 /(SrTiO 3 ) 16 superlattices and reveal different electric field configurations corresponding to the atomic scale electronic ordering and the nanoscale boundary conditions. The separability of two different fields probed by 4D STEM offers the possibility to reveal how each contributes to the electronic properties of the film.

36 MATERIALS SCIENCE↗

Convert Widespread Paraelectric Perovskite to Ferroelectrics

While nature provides a plethora of perovskite materials, only a few exhibit large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the nonpolar CaTiO 3 (CTO) structure, limiting the scope of their applications. Based on the effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the functional BiFeO 3 (BFO)- type structure, which is a common metastable structure in widespread CTO-type perovskite oxides. It is found that the improper antiferroelectricity in CTO-type perovskite and ferroelectricity in BFO-type perovskite have distinct dependences on mechanical and electric boundary conditions, both of which involve oxygen octahedral rotation and tilt. Thus the above difference can be used to stabilize the highly polar BFO-type structure in many CTO-type perovskite materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Piezoresponse amplitude and phase quantified for electromechanical characterization

Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate the ferroelectric domains. PFM gives an insight into the strength of local piezoelectric coupling and polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units into units of effective piezoelectric constant remains a challenge, and insufficient methods are often used. While most quantification efforts have been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase, which is often arbitrarily adjusted to fit expectations. This is problematic when investigating materials with unknown or negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses, because assumptions about the PFM phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the effective electrostrictive coefficient probed by PFM. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data have not been correctly processed. Here, we explain the PFM amplitude quantification process and demonstrate a path to identify the phase offset required to extract correct meaning from the PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM amplitude and phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Superconductivity devices: Commercial use of space

A YBCO thick film containing 20 percent Ag2O with a T(sub c) of 86.8 K and J(sub c) of 108 A/sq cm was obtained. The film was fabricated by a two-step firing process, i.e., firing the film at 1000 C for 10 minutes and annealing at 970 C for 30 minutes. The two-step firing process, however, was not suitable for the multiple-lead YBCO sample due to the formation of the 211 green phase at 1000 C in the multiple-lead YBCO sample. A BSCCO thick film printed on a MgO coated MSZ substrate and fired at 845 C for 2 hours exhibited a superconducting behavior at 89 K. Because of its porous microstructure, the critical current density of the BSCCO thick film was limited. This report also includes the results of the YBCO and BSCCO materials used as oxide electrodes for ferroelectric materials. The YBCO electroded PLZT showed higher remanent polarization and coercive field than the sample electroded with silver paste. A higher Curie temperature for the PLZT was obtained from the YBCO electroded sample. The BSCCO electroded sample, however, exhibited the same Curie temperature as that of a silver electroded sample. Dissipation factors of the ferroelectric samples increased when the oxide electrode was applied.

Haertling, Gene↗

Electron ptychography reveals a ferroelectricity dominated by anion displacements

Sodium niobate, a lead-free ferroic material, hosts delicately balanced, competing order parameters, including ferroelectric states that can be stabilized by epitaxial strain. Here we show that the resulting macroscopic ferroelectricity exhibits an unconventional microscopic structure using multislice electron ptychography. This technique overcomes multiple scattering artefacts limiting conventional electron microscopy, enabling both lateral spatial resolution beyond the diffraction limit and recovery of three-dimensional structural information. These imaging capabilities allow us to separate the ferroelectric interior of the sample from the relaxed surface structure and identify the soft phonon mode and related structural distortions with picometre precision. Unlike conventional ferroelectric perovskites, we find that the polar distortion in this material involves minimal distortions of the cation sublattices and is instead dominated by anion displacements relative to the niobium sublattice. We establish limits on film thickness for interfacial octahedral rotation engineering and directly visualize a random octahedral rotation pattern, arising from the flat dispersion of the associated phonon mode.

ferroelectrics and multiferroics↗

Exploring Domain-Wall Pinning in Ferroelectrics via Automated High-Throughput Atomic Force Microscopy

Domain-wall dynamics in ferroelectric materials are strongly position-dependent, since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of wall pinning using scanning-probe microscopy techniques. The pinning centers and pre-existing domain walls are usually sparse within the image plane, precluding the use of dense hyperspectral imaging modes and requiring time-consuming human experimentation. Here, a large-area epitaxial PbTiO 3 film on cubic KTaO 3 was investigated to quantify the electric-field-driven dynamics of the polar–strain domain structures using ML-controlled automated piezoresponse force microscopy. Analysis of 1500 switching events reveals that domain-wall displacement depends not only on field parameters but also on the local ferroelectric–ferroelastic configuration. For example, twin boundaries in polydomains regions, like a 1 – /c+ ∥ a 2 – /c – , stay pinned up to a certain level of bias magnitude and change only marginally as the bias increases from 20 to 30 V, whereas single-variant boundaries, like the a 2 + /c + ∥ a 2 – /c – stack, are already activated at 20 V. These statistics on the possible ferroelectric and ferroelastic wall orientations, together with the automated high-throughput AFM workflow, can be distilled into a predictive map that links domain configurations to pulse parameters. Here, this microstructure-specific rule set forms the foundation for the design of ferroelectric memories.

automated scanning probe microscopy↗

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe 1- x Ga x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe 1- x Ga x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe 1- x Ga x - [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 -[PbTiO 3 ] 0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10 -5 s m -1 . When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

36 MATERIALS SCIENCE↗

Pressure dependence of the electro-optic response function in partially exposed polymer dispersed ferroelectric liquid crystals

Ferroelectric liquid crystals in a new configuration, termed partially exposed polymer dispersed ferroelectric liquid crystal (PEPDFLC), respond to external pressures and demonstrate pressure-induced electro-optic switching response. When the PEPDFLC thin film is sandwiched between two transparent conducting electrodes, one a glass plate and the other a flexible sheet such as polyvenylidene fluoride, the switching characteristics of the thin film are a function of the pressure applied to the flexible transparent electrode and the bias voltage across the electrodes. Response time measurements reveal a linear dependence of the change in electric field with external pressure.

Parmar, D. S.↗

Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy

We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode utilizes two ammeters instead of one as commonly employed in the classical total electron yield scheme to measure photocurrents of devices under soft x-ray irradiation. The advantage of this configuration over the surface sensitive classical total electron yield mode is that it can provide information from buried layers and interfaces up to a thickness equal to the penetration depth of soft x-rays. The method can be easily adapted to existing synchrotron end stations. We investigate dielectric capacitors with dissimilar electrodes to assess the feasibility of the modified total electron yield method. Furthermore, in operando soft x-ray absorption spectroscopy measurements are performed on ferroelectric capacitors under bias and using two ammeters. The experimental results are discussed in terms of the external and internal photoemission processes and their distribution in thin film capacitors under an external bias condition. The proposed detection method opens the way to perform electronic and chemical state analyses of the buried interfaces and layers in various devices like multiferroic tunnel junctions, memristive devices, etc., during operation under an applied bias.

Kröger, E.↗

Colossal Cryogenic Electro‐Optic Response Through Metastability in Strained BaTiO 3 Thin Films

The search for thin film electro-optic materials that can retain superior performance under cryogenic conditions has become critical for quantum computing. Barium titanate thin films show large linear electro-optic coefficients in the tetragonal phase at room temperature, which is severely degraded down to ≈200 pm V −1 in the rhombohedral phase at cryogenic temperatures. There is immense interest in manipulating these phase transformations and retaining superior electro-optic properties down to liquid helium temperature. Utilizing the thermodynamic theory of optical properties, a large low-temperature electro-optic response is designed by engineering the energetic competition between different ferroelectric phases, leading to a low-symmetry monoclinic phase with a massive electro-optic response. The existence of this phase is demonstrated in a strain-tuned BaTiO 3 thin film that exhibits a linear electro-optic coefficient of 2516 ± 100 pm V −1 at 5 K, which is an order of magnitude higher than the best reported performance thus far. Importantly, the electro-optic coefficient increases by 100 × during cooling, unlike the conventional films, where it degrades. Further, at the lowest temperature, significant higher order electro-optic responses also emerge. These results represent a new framework for designing materials with property enhancements by stabilizing highly tunable metastable phases with strain.

barium titanate↗

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin‐film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom–up methods that grow doped samples on substrates directly and top–down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next‐generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

36 MATERIALS SCIENCE↗

Review on the growth, properties and applications of self-assembled oxide–metal vertically aligned nanocomposite thin films—current and future perspectives

Self-assembled oxide–metal nanocomposite thin films have aroused great research interest owing to their wide range of functionalities, including metamaterials with plasmonic and hyperbolic optical properties, and ferromagnetic, ferroelectric and multiferroic behaviors. Oxide–metal nanocomposites typically self-assemble as metal particles in an oxide matrix or as a vertically aligned nanocomposite (VAN) with metal nanopillars embedded in an oxide matrix. Among them, the VAN architecture is particularly interesting due to the vertical strain control and highly anisotropic structure, enabling the epitaxial growth of materials with large lattice mismatch. In this review, the driving forces behind the formation of self-assembled oxide–metal VAN structures are discussed. Specifically, an updated in-plane strain compensation model based on the areal strain compensation concept has been proposed in this review, inspired by the prior linear strain compensation model. It provides a guideline for material selection for designing VAN systems, especially those involving complex orientation matching relationships. Based on the model, several case studies are discussed, comparing the microstructure and morphology of different oxide–metal nanocomposites by varying the oxide phase. Specific examples highlighting the coupling between the electrical, magnetic and optical properties are also discussed in the context of oxide–metal nanocomposites. Finally, future research directions and needs are also discussed.

36 MATERIALS SCIENCE↗

Hierarchal structures tuned electrocaloric and electromechanical performance in PVDF-based tetrapolymers

Ferroelectrics with multifunctionalities are gaining increased interest in self-actuated electrocaloric effect (ECE) refrigerators. However, achieving high ECE and electromechanical (EM) coupling concomitantly for maximum heat transfer remains challenging. Here we present the structure-property relationship for poly(vinylidene fluoride-co-trifluoroethylene-co-chlorofluoroethylene-co-double bond), P(VDF-TrFE-CFE-DB), tetrapolymer, which exhibited a high ECE entropy change of 66.5 J Kg −1 K −1 and EM strain of −6.1%. We show that thermal treatment can be a key factor influencing multifunctional properties. High-temperature annealing incorporates DB and CFE units into crystalline grains to form extended-chain crystals, enabling CFE units to induce relaxor behavior and DB units to induce large structural changes at low electric fields. This synergy leads to an enhancement in both ECE and EM performances. Furthermore, at an optimized temperature of 50 °C, the annealed films exhibit giant cross-energy coupling, achieving ECE and EM performances of 100.8 J Kg −1 K −1 and −7.6%. This study provides insights into developing new ferroelectric polymers with electroactive multifunctionalities.

36 MATERIALS SCIENCE↗

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗

Non-volatile electric control of magnetic and topological properties of MnBi 2 Te 4 thin films

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi 2 Te 4 on ferroelectric In 2 Se 3 or In 2 Te 3 , where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi 2 Te 4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

36 MATERIALS SCIENCE↗

Switchable planar chirality and spin texture in highly ordered ferroelectric hybrid perovskite domains

Chiral organic-inorganic hybrid perovskites offer a promising platform for developing non-linear chiro-optical applications and chiral-induced spin selectivity. Here, we show that achiral hybrid perovskites that have highly ordered ferroelectric domains with orthogonal polarization exhibit planar chirality, as manifested by second harmonic generation with strong circular dichroism. Interestingly, the handedness of the second harmonic generation circular dichroism response can be alternatingly switched between orthogonally polarized domains and domain walls. To correlate the origin of planar chirality in these domains, atom-resolved atomic force microscopy is used to reveal distinct arrangements of atomic rows in these ferroelectric crystals that indicate planar symmetry breaking. Remarkably, a large SHG anisotropy factor of 0.41 is measured at the domain wall. Additionally, spatially resolved two-photon photoluminescence excitation measurement provide evidence of larger Rashba spin-splitting in these chiral ferroelectric domains compared to domain-free areas. Our discoveries of domain-dependent planar chirality and spin texture hold great promise for advancement of domain-specific chiro-optical applications.

36 MATERIALS SCIENCE↗