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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Internal photoemission in Ag-Al2O3-Al junctions

The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.

Guedes, J. M. P.↗
NASA NTRS1979

III-V alloy heterostructure high speed avalanche photodiodes

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

Law, H. D.↗
NASA NTRS1979

State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

Law, H. D.↗
NASA NTRS1980

Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

Shanley, J. F.↗
NASA NTRS1980

Conceptual design and applications of HgCdTe infrared photodiodes for heterodyne systems

The significance of HgCdTe photodiodes are discussed relative to their existance in heterodyne detection systems operating in the 9 to 11 micrometer CO2 laser wavelength region. Their successful fabrication as well as the physical properties of the materials are described. The implementation of controlled industrial processes are reported with emphasis on the yield of predictable and repeatable detector characteristics to the discriminating systems, demands for high cutoff frequencies, quantum efficiency, and reliability. The most salient production steps and diode characteristics are presented. Measured results from production units are also given.

Sirieix, M. B.↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗
NASA NTRS1979

Detector arrays for photometric measurements at soft X-ray, ultraviolet and visible wavelengths

The construction and modes of operation of the Multi-Anode Microchannel Array (MAMA) detectors are described, and the designs of spectrometers utilizing them are outlined. MAMA consists of a curved microchannel array plate, an opaque photocathode (peak quantum efficiency of 19% at 1216 A), and a multi-anode (either discrete- or coincidence-anode) readout array. Designed for use in instruments on spaceborne telescopes, MAMA can be operated in a windowless configuration in extreme-ultraviolet and soft X-ray wavelengths, or in a sealed configuration at UV and visible wavelengths. Advantages of MAMA include low applied potential (less than 3.0 kV), high gain (greater than 10 to the 6th electrons/pulse), low sensitivity to high-energy charged particles, and immunity to external magnetic fields of less than 500 Gauss

Timothy, J. G.↗
NASA NTRS1979

A real-time electronic imaging system for solar X-ray observations from sounding rockets

A real-time imaging system for displaying the solar coronal soft X-ray emission, focussed by a grazing incidence telescope, is described. The design parameters of the system, which is to be used primarily as part of a real-time control system for a sounding rocket experiment, are identified. Their achievement with a system consisting of a microchannel plate, for the conversion of X-rays into visible light, and a slow-scan vidicon, for recording and transmission of the integrated images, is described in detail. The system has a quantum efficiency better than 8 deg above 8 A, a dynamic range of 1000 coupled with a sensitivity to single photoelectrons, and provides a spatial resolution of 15 arc seconds over a field of view of 40 x 40 square arc minutes. The incident radiation is filtered to eliminate wavelengths longer than 100 A. Each image contains 3.93 x 10 to the 5th bits of information and is transmitted to the ground where it is processed by a mini-computer and displayed in real-time on a standard TV monitor.

Davis, J. M.↗
NASA NTRS1980

Quantitative analysis of autoradiographic image intensification using Thiourea-S35

Photographic images enhanced by the method of Thiourea-S35 autoradiography are evaluated in terms of signal-to-noise ratio, detective quantum efficiency (DQE), and Wiener spectrum analysis using digitized images. It is determined that the original signal-to-noise ratio is not degraded by the intensification process which allows an increase in the practical working DQE as a function of density. These results apply at all spatial frequencies that were tested. The advantage given by autoradiography is the ability to produce usable images from emulsions originally exposed to the low densities corresponding to maximum DQE and movement of faint image densities above the level of the threshold for detection.

Askins, B. S.↗
NASA NTRS1980

Gigahertz analog modulation and differential delay of GaAlAs lasers - Temperature and current behavior

Gigahertz analog modulation characteristics of broad-area commercially available GaAlAs lasers have been investigated as a function of temperature and current in the vicinity of the upper frequency limit, where the resonance phenomena occur. The optimum temperature for small-signal amplitude modulation was found to be around -15 C for our particular broad-stripe geometry double-heterostructure laser. The Q was found to increase by a factor of 2 and the bandwidth by about 2%; the external quantum efficiency was maximized in this range. The optimum dc current bias was about 2% above the threshold current. Differential delays have also been measured down to a few picosecond accuracy by a unique phase-angle measurement method using a vector voltmeter. Some of the temperature effects observed may be related to mode changes and multimode and superradiance behavior.

Eng, S. T.↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS1980

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

Botez, D.↗
NASA NTRS1980

A dual charge-coupled device /CCD/, astronomical spectrometer and direct imaging camera. I - Optical and detector systems

The MASCOT (MIT Astronomical Spectrometer/Camera for Optical Telescopes), an instrument capable of simultaneously performing both direct imaging and spectrometry of faint objects, is examined. An optical layout is given of the instrument which uses two CCD's mounted on the same temperature regulated detector block. Two sources of noise on the signal are discussed: (1) the CCD readout noise, which results in a constant uncertainty in the number of electrons collected from each pixel; and (2) the photon counting noise. The sensitivity of the device is limited by the sky brightness, the overall quantum efficiency, the resolution, and the readout noise of the CCD. Therefore, total system efficiency is calculated at about 15%.

Meyer, S. S.↗
NASA NTRS1980

State-of-the-art Space Telescope Digicon performance data

The Digicon has been chosen as the detector for the High Resolution Spectrograph and the Faint Object Spectrograph of the Space Telescope. Both tubes are 512 channel, parallel-output devices and feature CsTe photocathodes on MgF2 faceplates. Using a computer-assisted test facility, the tubes have been characterized with respect to diode array performance, photocathode response (1100-9000 A), and imaging capability. Data are presented on diode dark current and capacitance distributions, pulse height resolution, photocathode quantum efficiency, uniformity and blemishes, dark count rate, distortion, resolution, and crosstalk.

Ginaven, R. O.↗
NASA NTRS1981

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗
NASA NTRS1981

Photoproduction of I2, Br2, and Cl2 on n-semiconducting powder

The photosynthetic production of Br2 and Cl2 and the photocatalytic production of I2 from aqueous solutions of the respective halide ions in the presence of platinized semiconducting n-TiO2 powder are reported. Reactions were produced in 2-3 M oxygen-saturated aqueous solutions of KI, KBr or NaCl containing Pt-TiO2 powder which were irradiated by a high-pressure mercury lamp at a power of 400 mW/sq cm. Halogens are found to be produced in greater quantities when platinized TiO2 powders are used rather than pure TiO2, and rates of halogen production are observed to increase from Cl2 to Br2 to I2. The presence of the synthetic reactions producing Br2 and Cl2 with a net influx of energy indicates that an effective separation of the photoproduced electron-hole pair occurs in the semiconductor. Quantum efficiencies of the reaction, which increase with decreasing solution pH, are found to be as high as 30%, implying a solar-to-chemical energy conversion efficiency between 0.03% and 3% for the case of chlorine production. It is concluded that the photoproduction of halogens may be of practical value if product halogens are efficiently removed from the reaction cell.

Reichman, B.↗
NASA NTRS1981

Very low threshold-current temperature sensitivity in constricted double-heterojunction AlGaAs lasers

The temperature dependence of threshold currents in constricted double-heterojunction diode lasers with strong lateral mode confinement is found to be significantly milder than for other types of lasers. The threshold-current relative variations with ambient temperature are typically two to three times less than for other devices of CW-operation capability. Over the interval 10-70 C the threshold currents fit the empirical exponential law exp/(T2-T1)/T0/ with T0 values in the 240-375 C range in pulsed operation, and in the 200-310 C range in CW operation. The external differential quantum efficiency and the mode far-field pattern near threshold are virtually invariant with temperature. The possible causes of high-T0 behavior are analyzed, and a new phenomenon - temperature-dependent current focusing - is presented to explain the results.

Botez, D.↗
NASA NTRS1982

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Botez, D.↗