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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Asymmetric twins in rhombohedral boron carbide

Superhard materials consisting of light elements have recently received considerable attention because of their ultrahigh specific strength for a wide range of applications as structural and functional materials. However, the failure mechanisms of these materials subjected to high stresses and dynamic loading remain to be poorly known. We report asymmetric twins in a complex compound, boron carbide (B{sub 4}C), characterized by spherical-aberration-corrected transmission electron microscopy. The atomic structure of boron-rich icosahedra at rhombohedral vertices and cross-linked carbon-rich atomic chains can be clearly visualized, which reveals unusual asymmetric twins with detectable strains along the twin interfaces. This study offers atomic insights into the structure of twins in a complex material and has important implications in understanding the planar defect-related failure of superhard materials under high stresses and shock loading.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Adhesion and Atomic Structures of Gold on Ceria Nanostructures:The Role of Surface Structure and Oxidation State of Ceria Supports

Recent advances in heterogeneous catalysis have demonstrated that oxides supports with the same material but different shapes can result in metal catalysts with distinct catalytic properties. The shape-dependent catalysis was not well-understood owing to the lack of direct visualization of the atomic structures at metal-oxide interface. Herein, we utilized aberration-corrected electron microscopy and revealed the atomic structures of gold particles deposited on ceria nanocubes and nanorods with {100} or {111} facets exposed. For the ceria nanocube support, gold nanoparticles have extended atom layers at the metal-support interface. In contrast, regular gold nanoparticles and rafts are present on the ceria nanorod support. After hours of water gas shift reaction, the extended gold atom layers and rafts vanish, which is associated with the decrease of the catalytic activities. By understanding the atomic structures of the support surfaces, metal-support interfaces, and morphologies of the gold particles, a direct structure-property relationship is established.

Lin, Yuyuan↗
DOE OSTI2014

Defect interactions with stepped CeO{sub 2}/SrTiO{sub 3} interfaces: Implications for radiation damage evolution and fast ion conduction

Due to reduced dimensions and increased interfacial content, nanocomposite oxides offer improved functionalities in a wide variety of advanced technological applications, including their potential use as radiation tolerant materials. To better understand the role of interface structures in influencing the radiation damage tolerance of oxides, we have conducted atomistic calculations to elucidate the behavior of radiation-induced point defects (vacancies and interstitials) at interface steps in a model CeO{sub 2}/SrTiO{sub 3} system. We find that atomic-scale steps at the interface have substantial influence on the defect behavior, which ultimately dictate the material performance in hostile irradiation environments. Distinctive steps react dissimilarly to cation and anion defects, effectively becoming biased sinks for different types of defects. Steps also attract cation interstitials, leaving behind an excess of immobile vacancies. Further, defects introduce significant structural and chemical distortions primarily at the steps. These two factors are plausible origins for the enhanced amorphization at steps seen in our recent experiments. The present work indicates that comprehensive examination of the interaction of radiation-induced point defects with the atomic-scale topology and defect structure of heterointerfaces is essential to evaluate the radiation tolerance of nanocomposites. Finally, our results have implications for other applications, such as fast ion conduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Phonon confinement and interface lattice dynamics of ultrathin high- k rare earth sesquioxide films: the case of Eu 2 O 3 on YSZ(001)

The spatial confinement of atoms at surfaces and interfaces significantly alters the lattice dynamics of thin films, heterostructures and multilayers. Ultrathin films with high dielectric constants (high-k) are of paramount interest for applications as gate layers in current and future integrated circuits. Here we report a lattice dynamics study of high-k Eu 2 O 3 films with thicknesses of 21.3, 2.2, 1.3, and 0.8 nm deposited on YSZ(001). The Eu-partial phonon density of states (PDOS), obtained from nuclear inelastic scattering, exhibits broadening of the phonon peaks accompanied by up to a four-fold enhancement of the number of low-energy states compared to the ab initio calculated PDOS of a perfect Eu 2 O 3 crystal. Our analysis demonstrates that while the former effect reflects the reduced phonon lifetimes observed in thin films due to scattering from lattice defects, the latter phenomenon arises from an ultrathin EuO layer formed between the thin Eu 2 O 3 film and the YSZ(001) substrate. Thus, our work uncovers another potential source of vibrational anomalies in thin films and multilayers, which has to be cautiously considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Site dependent reactivity of Pt single atoms on anatase TiO 2 (101) in an aqueous environment

The TiO 2 –Pt–water interface is of great relevance in photocatalysis where Pt is widely used as a co-catalyst for The TiO 2 –Pt–water interface is of great relevance in photocatalysis where Pt is widely used as a co-catalyst for enhancing hydrogen evolution in aqueous TiO 2 . Using ab initio molecular dynamics, we investigated this interface focusing on Pt single atoms supported on anatase TiO 2 (101) in a water environment. Based on recent experiments showing a broad distribution of Pt coordination sites in TiO 2 , we examined six distinct single-Pt supported species with different nominal Pt oxidation states, namely: Pt, PtOH, and PtO 2 species adsorbed on the stoichiometric surface; Pt adsorbed at a surface oxygen vacancy (O v ); and Pt substituting a surface Ti cation (PtTi), both without and with an accompanying O v (Pt Ti + O v ). As found for the pristine anatase surface, interfacial water remained intact in the presence of a nearly neutral Pt adatom within the time duration of our simulations (~15 ps). Similarly, no (or only temporary) water dissociation was observed at the Pt Ti + O v and PtO 2 interfaces, due to the formation of very stable planar Pt coordination structures that interact only weakly with water. In contrast, water dissociated with OH – (H + ) on the Pt atom when this substituted a surface Ti (oxygen) ion as well as on PtOH. Lastly, the significant proton affinity of Pt atoms at surface oxygen vacancies suggests that negatively charged Pt species are particularly efficient at catalyzing hydrogen evolution in aqueous TiO 2 .hydrogen evolution in aqueous TiO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2014

Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface

In this study, we demonstrate the epitaxial growth of BaTiO{sub 3} on Ge(001) by molecular beam epitaxy using a thin Zintl template buffer layer. A combination of density functional theory, atomic-resolution electron microscopy and in situ photoemission spectroscopy is used to investigate the electronic properties and atomic structure of the BaTiO{sub 3}/Ge interface. Aberration-corrected scanning transmission electron micrographs reveal that the Ge(001) 2 × 1 surface reconstruction remains intact during the subsequent BaTiO{sub 3} growth, thereby enabling a choice to be made between several theoretically predicted interface structures. The measured valence band offset of 2.7 eV matches well with the theoretical value of 2.5 eV based on the model structure for an in-plane-polarized interface. The agreement between the calculated and measured band offsets, which are highly sensitive to the detailed atomic arrangement, indicates that the most likely BaTiO{sub 3}/Ge(001) interface structure has been identified.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

The many faces of θ' -Al 2 Cu precipitates: Energetics of pristine and solute segregated Al/ θ' semi-coherent interfaces

θ'-Al 2 Cu precipitates in Al-Cu alloys have various distorted octagon shapes, which can be explained by the competition between {100} and {110} type semi-coherent interfaces with the Al matrix. While most prior studies on the semi-coherent Al/θ' interfaces have focused on the {100} orientation, little is known about the {110} interface. We have investigated the energetics of pristine and solute-segregated {110} semi-coherent Al/θ' interfaces with advanced characterization and first-principles studies. We report interfacial, strain, and solute segregation energetics of the {110} Al/θ' semi-coherent interface for 39 elements and compared them with previously reported values of the {100} interface. We discuss the atomic features and atomic local structures to identify similarities and differences between the two types of Al/θ' semi-coherent interfaces. Here, the isotropy in pristine Al/θ' semi-coherent interfacial energy and the anisotropy resulting from solute segregation provide insight into the formation of different types of θ' precipitate “faces” reported in the literature.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0 ). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2 -Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.

47 OTHER INSTRUMENTATION↗
NASA NTRS1979

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

Rao, V. B.↗
DOE OSTI2021

Role of transferred graphene on atomic interaction of GaAs for remote epitaxy

Remote epitaxy is a recently discovered type of epitaxy, wherein single-crystalline thin films can be grown on graphene-coated substrates following the crystallinity of the substrate via remote interaction through graphene. Although remote epitaxy provides a pathway to form freestanding membranes by controlled exfoliation of grown film at the graphene interface, implementing remote epitaxy is not straightforward because atomically precise control of interface is required. Here, we unveil the role of the graphene–substrate interface on the remote epitaxy of GaAs by investigating the interface at the atomic scale. By comparing remote epitaxy on wet-transferred and dry-transferred graphene, we show that interfacial oxide layer formed at the graphene–substrate interface hinders remote interaction through graphene when wet-transferred graphene is employed, which is confirmed by an increase of interatomic distance through graphene and also by the formation of polycrystalline films on graphene. On the other hand, when dry-transferred graphene is employed, the interface is free of native oxide, and single-crystalline remote epitaxial films are formed on graphene, with the interatomic distance between the epilayer and the substrate matching with the theoretically predicted value. The first atomic layer of the grown film on graphene is vertically aligned with the top layer of the substrate with these atoms having different polarities, substantiating the remote interaction of adatoms with the substrate through graphene. These results directly show the impact of interface properties formed by different graphene transfer methods on remote epitaxy.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interfacing the Ab initio multiple spawning method with electronic structure methods in GAMESS: Photodecay of trans- Azomethane

This work presents a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane, using the ab initio multiple spawning (AIMS) program that has been interfaced with the General Atomic and Molecular Electronic Structure System (GAMESS) quantum chemistry package for on-the-fly electronic structure evaluation. The interface strategy is discussed, and the capabilities of the combined programs are demonstrated with a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane. Energies, gradients, and nonadiabatic coupling matrix elements were obtained with the state-averaged complete active space self-consistent field method, as implemented in GAMESS. The influence of initial vibrational excitation on the outcome of the photoinduced isomerization is explored. Increased vibrational excitation in the CNNC torsional mode shortens the excited state lifetime. Depending on the degree of vibrational excitation, the excited state lifetime varies from ~60–200 fs. As a result, these short lifetimes are in agreement with time-resolved photoionization mass spectroscopy experiments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Epitaxial Multifunctional Oxide Heterostructures (DOE Final Technical Report)

The conducting interface that forms between the two band insulators LaAlO 3 (LAO) and SrTiO 3 (STO) continues to attract tremendous attention nearly 15 years after its discovery. Until recently, most of the work on this system has been done in samples grown in the (001) crystal orientation. More recently, interest has focused on samples grown in the (110) and (111) crystal orientations. While the underlying cubic crystal structure is the same, the lattice symmetry at the interface in each case is different, raising the possibility of different properties. In particular, the symmetry of the Ti atoms at the (111) interface is hexagonal, similar to graphene, leading to predictions of topological properties of the band structure. The major part of this proposal is devoted to exploring the properties of (111) LAO/STO interfaces and (111) (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )/STO (LSAT/STO) interfaces, where we have recently discovered interesting new effects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of tool shape on lattice rearrangement under loading conditions reproducing friction stir welding

Metal behavior under loading conditions that reproduce friction stir welding was studied on the atomic scale. Calculations were conducted based on molecular dynamics simulation with potentials calculated within the embedded atom method. The loading of the interface between two crystallites, whose structure corresponded to aluminum alloy 2024, was simulated by the motion of a cone-shaped tool along the interface with constant angular and translational velocities. The motion of the rotating tool causes fracture of the workpiece crystal structure with subsequent mixing of surface atoms of the interfacing crystallites. It is shown that the resistance force acting on the moving tool from the workpiece and the process of structural defect formation in the workpiece depend on the tool shape.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Single-atom cobalt array bound to distorted 1T MoS2 with ensemble effect for hydrogen evolution catalysis

The grand challenge in the development of atomically dispersed metallic catalysts is their low metal-atom loading density, uncontrollable localization and ambiguous interactions with supports, posing difficulty in maximizing their catalytic performance. Here, we achieve an interface catalyst consisting of atomic cobalt array covalently bound to distorted 1T MoS 2 nanosheets (SA Co-D 1T MoS 2 ). The phase of MoS 2 transforming from 2H to D-1T, induced by strain from lattice mismatch and formation of Co-S covalent bond between Co and MoS 2 during the assembly, is found to be essential to form the highly active single-atom array catalyst. SA Co-D 1T MoS 2 achieves Pt-like activity toward HER and high long-term stability. Active-site blocking experiment together with density functional theory (DFT) calculations reveal that the superior catalytic behaviour is associated with an ensemble effect via the synergy of Co adatom and S of the D-1T MoS 2 support by tuning hydrogen binding mode at the interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Stress effects on the initial lithiation of crystalline silicon nanowires: Reactive molecular dynamics simulations using ReaxFF

Silicon (Si) has been recognized as a promising anode material for the next-generation high-capacity lithium (Li)-ion batteries because of its high theoretical energy density. Recent in situ transmission electron microscopy (TEM) revealed that the electrochemical lithiation of crystalline Si nanowires (c-SiNWs) proceeds by the migration of the interface between the lithiated Si (LixSi) shell and the pristine unlithiated core, accompanied by solid-state amorphization. The underlying atomic mechanisms of Li insertion into c-Si remain poorly understood. In this research, we perform molecular dynamics (MD) simulations using the reactive force field (ReaxFF) to characterize the lithiation process of c-SiNWs. Our calculations show that ReaxFF can accurately reproduce the energy barriers of Li migration from DFT calculations in both crystalline (c-Si) and amorphous Si (a-Si). The ReaxFF-based MD simulations reveal that Li insertion into interlayer spacing between two adjacent (111) planes results in the peeling-off of the (111) facets and subsequent amorphization, in agreement with experimental observations. We find that breaking of the Si–Si bonds between (111)-bilayers requires a rather high local Li concentration, which explains the atomically sharp amorphous–crystalline interface (ACI). Our stress analysis shows that lithiation induces compressive stress at the ACI layer, causing retardation or even the stagnation of the reaction front, also in good agreement with TEM observations. Lithiation at high temperatures (e.g. 1200 K) shows that Li insertion into c-SiNW results in an amorphous to crystalline phase transformation at Li : Si composition of ~4.2:1. In conclusion, our modeling results provide a comprehensive picture of the effects of reaction and diffusion-induced stress on the interfacial dynamics and mechanical degradation of SiNW anodes under chemo-mechanical lithiation.

25 ENERGY STORAGE↗
DOE OSTI2014

The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The findings demonstrate the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We postulate that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.

42 ENGINEERING↗
DOE OSTI2017

Elastocapillary levelling of thin viscous films on soft substrates

A thin liquid film with nonzero curvature at its free surface spontaneously flows to reach a flat configuration, a process driven by Laplace pressure gradients and resisted by the liquid's viscosity. Inspired by recent progresses on the dynamics of liquid droplets on soft substrates, we here study the relaxation of a viscous film supported by an elastic foundation. Experiments involve thin polymer films on elastomeric substrates, where the dynamics of the liquid-air interface is monitored using atomic force microscopy. A theoretical model that describes the coupled evolution of the solid-liquid and the liquid-air interfaces is also provided. In this soft-levelling configuration, Laplace pressure gradients not only drive the flow, but they also induce elastic deformations on the substrate that affect the flow and the shape of the liquid-air interface itself. This process represents an original example of elastocapillarity that is not mediated by the presence of a contact line. We discuss the impact of the elastic contribution on the levelling dynamics and show the departure from the classical self-similarities and power laws observed for capillary levelling on rigid substrates.

42 ENGINEERING↗