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DOE OSTI2022

Longevity evaluation of SiC based alpha voltaic batteries with surface alpha sources

The alpha emitting actinide 241 Am is electrodeposited on the surface of the Pt electrode of in-house fabricated SiC Schottky diodes. With 17 nCi 241 Am directly coated on the top of a device, the 2-pi geometry yields a high energy (5.486 MeV) and a long-term irradiation accumulating to a high fluence (1.6 × 10 9 alpha particles’ infusion/month). The forward, reverse I/V, and dark current, are periodically measured to monitor key characteristics of device durability for any sign of degradation over time. The direct deposition of actinides on the surface of the device also enables the evaluation of radiation damage through alpha particles’ energy spectroscopic performance, which shows a clear spectrum degradation that can be reversed by optical excitation of the device prior to spectrum acquisition. As an analytical aide, the device performance is also simulated by Allpix 2 . Lastly, this study provides an insight into the durability of 4H-SiC as an energy converter option for alpha-voltaic batteries and the survivability in the other harsh environment found in nuclear fuel cycle, high energy physics, fission, fusion, and space exploration where rad-hard sensors are required.

Americium↗

DOE OSTI2014

SU-E-T-368: Effect of a Strong Magnetic Field On Select Radiation Dosimeters

Purpose: To determine the effect of a strong magnetic field on TLD-100, OSLD (Al{sub 2}O{sub 2}:C), and PRESAGE dosimetry devices. This study will help to determine which types of dosimeters can be used for quality assurance and in-vivo dosimetry measurements in a magnetic resonance imaginglinear accelerator (MRI-linac) system. Methods: The dosimeters were separated into two categories which were either exposed or not exposed to a strong magnetic field. In each category a set of dosimeters was irradiated with 0, 2, or 6 Gy. To expose the dosimeters to a magnetic field the samples in that category were place in a Bruker small animal magnetic resonance scanner at a field strength slightly greater than 2.5 T for at least 1 hour preirradiation and at least 1 hour post-irradiation. Irradiations were performed with a 6 MV x-ray beam from a Varian TrueBeam linac with 10×10 cm{sup 2} field at a 600 MU/min dose rate. The samples that received no radiation dose were used as control detectors. Results: The readouts of the dosimeters which were not exposed to a strong magnetic field were compared with the measurements of the dosimetry devices which were exposed to a magnetic field. No significant differences (less than 2% difference) in the performance of TLD, OSLD, or PRESAGE dosimeters due to exposure to a strong magnetic field were observed. Conclusion: Exposure to a strong magnetic field before and after irradiation does not appear to change the dosimetric properties of TLD, OSLD, or PRESAGE which indicates that these dosimeters have potential for use in quality assurance and in-vivo dosimetry in a MRI-linac. We plan to further test the effect of magnetic fields on these devices by irradiating them in the presence of a magnetic fields similar to those produced by a MRI-linac system. Elekta-MD Anderson Cancer Center Research Agreement.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2019

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes

It is established experimentally that noticeable changes in the I–V characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 10{sup 15} cm{sup –2}. The currents in the forward and reverse branches of the I–V characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the I–V characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 10{sup 15} cm{sup –2}. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 10{sup 15} cm{sup –2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Conceptual Design of Neutron Sensor Qualification Device

The Advanced Sensors and Instrumentation Program at Idaho National Laboratory has been formulating strategies to qualify sensors for use in nuclear environments, particularly in irradiation experiments and advanced reactors. When qualifying neutron sensors for use in high-temperature environments, the wide range of neutron flux levels and representative energy spectra presents significant challenges. This paper discusses the development of the Neutron Sensor Qualification Device (NQD), which is designed to test neutron sensors in high temperature controlled environments with known neutron spectra, addressing the spatial and spectral complexities of neutron fluxes in reactor cores. The proposed NQD will be situated in the exposure room at the Armed Forces Radiobiology Research Institute, thus affording a unique capability to expose sensors to high neutron and gamma fluxes. To achieve thermal control, the device will utilize a radiation-hardened tube furnace, accommodating multiple sensors and neutron activation dosimetry wires. Titanium, iron, and cobalt dosimeter wires are chosen from the American Society for Testing and Materials and International Reactor Dosimetry and Fusion File libraries as references for providing energy-dependent fluence measurements. The design ensures precise sensor positioning to minimize mutual shielding and flux perturbation, which are evaluated via Monte Carlo N particle Transport Code (MCNP) simulations. These simulations have informed the development of guidelines on sensor placement within the NQD. The NQD is essential to the qualification of neutron sensors for advanced reactor technologies. It enables controlled testing of a statistically significant number of sensors, thereby supporting assessments of sensor performance across various neutron flux levels and temperatures. This paper highlights the detailed planning for the NQD prototype, along with its inaugural irradiation (scheduled for fiscal year [FY] 2025). The results from this initial testing will be fundamental in evaluating the device’s performance and establishing measurement uncertainty for in-pile neutron sensor measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2017

Inducing superconductivity in Weyl semimetal microstructures by selective ion sputtering

By introducing a superconducting gap in Weyl or Dirac semimetals, the superconducting state inherits the nontrivial topology of their electronic structure. As a result, Weyl superconductors are expected to host exotic phenomena, such as nonzero-momentum pairing due to their chiral node structure, or zero-energy Majorana modes at the surface. These are of fundamental interest to improve our understanding of correlated topological systems, and, moreover, practical applications in phase-coherent devices and quantum applications have been proposed. Proximity-induced superconductivity promises to allow these experiments on nonsuperconducting Weyl semimetals. Here, we show a new route to reliably fabricate superconducting microstructures from the nonsuperconducting Weyl semimetal NbAs under ion irradiation. Furthermore, the significant difference in the surface binding energy of Nb and As leads to a natural enrichment of Nb at the surface during ion milling, forming a superconducting surface layer (Tc ~ 3.5 K). Being formed from the target crystal itself, the ideal contact between the superconductor and the bulk may enable an effective gapping of the Weyl nodes in the bulk because of the proximity effect. Simple ion irradiation may thus serve as a powerful tool for the fabrication of topological quantum devices from monoarsenides, even on an industrial scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

High resolution Cerenkov light imaging of induced positron distribution in proton therapy

Purpose: In proton therapy, imaging of the positron distribution produced by fragmentation during or soon after proton irradiation is a useful method to monitor the proton range. Although positron emission tomography (PET) is typically used for this imaging, its spatial resolution is limited. Cerenkov light imaging is a new molecular imaging technology that detects the visible photons that are produced from high-speed electrons using a high sensitivity optical camera. Because its inherent spatial resolution is much higher than PET, the authors can measure more precise information of the proton-induced positron distribution with Cerenkov light imaging technology. For this purpose, they conducted Cerenkov light imaging of induced positron distribution in proton therapy. Methods: First, the authors evaluated the spatial resolution of our Cerenkov light imaging system with a {sup 22}Na point source for the actual imaging setup. Then the transparent acrylic phantoms (100 × 100 × 100 mm{sup 3}) were irradiated with two different proton energies using a spot scanning proton therapy system. Cerenkov light imaging of each phantom was conducted using a high sensitivity electron multiplied charge coupled device (EM-CCD) camera. Results: The Cerenkov light’s spatial resolution for the setup was 0.76 ± 0.6 mm FWHM. They obtained high resolution Cerenkov light images of the positron distributions in the phantoms for two different proton energies and made fused images of the reference images and the Cerenkov light images. The depths of the positron distribution in the phantoms from the Cerenkov light images were almost identical to the simulation results. The decay curves derived from the region-of-interests (ROIs) set on the Cerenkov light images revealed that Cerenkov light images can be used for estimating the half-life of the radionuclide components of positrons. Conclusions: High resolution Cerenkov light imaging of proton-induced positron distribution was possible. The authors conclude that Cerenkov light imaging of proton-induced positron is promising for proton therapy.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2018

A Numerical Study of Cracks Appearance on Tungsten Surface After High Intense Pulsed Ion Beam Irradiation

Due to the outstanding physical properties, Tungsten has been proposed for use in the divertor of future fusion devices. However, tungsten shall face strong particle bombardment from the plasma, which causes severe damage to the material. The purpose of this work is to build such an accurate analytical model which can predict the damages in target material like crack production and propagation after high intense pulsed ion beam irradiation. Hence, a two-dimensional finite element method is used to study the effect of high intense pulsed ion beam on tungsten surface numerically. To judge temperature and stress distribution in material, thermal conduction model is combined with non-linear fracture mechanics model and J-Integral parameter is used as a criterion to judge the crack propagation. Simulation results reveal that different crack heights and sizes can affect the results and there is a critical depth for crack propagation. The model gives good results to real experimental observations and has potential applications for different intense pulsed electron/plasma beams and different target materials as well.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗

NASA NTRS1993

Evaluation of radiation effects in re-oxidized nitrided oxide devices by hot carrier stressing at 77 K

An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.

Das, N. C.↗

NASA NTRS1997

Surface Measurements of Solar Spectral Radiative Flux in the Cloud-Free Atmosphere

Recent studies (Charlock, et al.; Kato, et. al) have indicated a potential discrepancy between measured solar irradiance in the cloud-free atmosphere and model derived downwelling solar irradiance. These conclusions were based primarily on broadband integrated solar flux. Extinction (both absorption and scattering) phenomena, however, typically have spectral characteristics that would be present in moderate resolution (e.g., 10 nm) spectra, indicating the need for such measurements to thoroughly investigate the cause of any discrepancies. The 1996 Department of Energy Atmospheric Radiation Measurement Program (ARM) Intensive Observation Period (IOP), held simultaneously with the NASA Subsonic Aircraft: Contrail and Cloud Effects Special Study (SUCCESS) Program, provided an opportunity for two simultaneous but independent measurements of moderate resolution solar spectral downwelling irradiance at the surface. The instruments were the NASA Ames Solar Spectral Flux Radiometer and the Analytical Spectral Devices, Inc., FieldSpecT-FR. Spectral and band integrated quantities from both sets of measurements will be presented, along with estimates of the downwelling solar irradiance from band model and line by line calculations, in an effort to determine the compatibility between measured and calculated solar irradiance in the cloud-free atmosphere.

Pilewskie, Peter↗

DOE OSTI2021

Insulation or Irradiance: Exploring Why Bifacial Photovoltaics Run Hot

Bifacial photovoltaics are predicted to become the dominant device architecture over the next couple of years, but their thermal performance is not yet well understood. In this study, we model the thermal effects of different backside lamination materials on the performance of bifacial PERC cells. Glass-glass laminated cells were found to operate hotter than equivalent glass-polymer backsheet packed cells. This was solely due to the increased absorption of rear side incident light.

bifacial↗

DOE OSTI2019

All-solid-state supercapacitors from natural lignin-based composite film by laser direct writing

Lignin as a renewable natural resource has been the aim of numerical interest in applications ranging from pitch to porous carbon material. In this work, a facile method is reported to transform lignin into porous conductive carbon structures and interdigitated circuits for supercapacitor devices using femtosecond laser direct writing. Comparative studies revealed that the laser irradiation induced tetrahedral amorphous carbon while only graphitic carbon was obtained through pyrolysis. At the same time, the composite membrane was easily prepared to further optimize the capacities by mixing functional materials (MoS 2 ) into the lignin/polyacrylonitrile (PAN) composite polymers. A MoS2 decorated porous carbon network material could be fabricated through focused femtosecond pulsed laser irradiation of the corresponding composite membranes. The microstructure and spectroscopic features of these laser induced hybrid carbon materials have been deeply investigated. The supercapacitor based on lignin/PAN has high areal specific capacitances of 6.7 mF cm –2 (0.9 F cm –3 ) at 10 mV s –1 . Moreover, doped microsupercapacitors with MoS2 demonstrated enhanced areal capacitances up to 16 mF cm –2 (2.2 F cm –3 ) and at 10 mV s –1 , respectively. The relatively high areal capacitances indicate that the introduced method is potential for innovative manufacturing energy storage devices based on natural lignin.

36 MATERIALS SCIENCE↗

DOE OSTI2018

The role of electron irradiation history in liquid cell transmission electron microscopy

In situ liquid cell transmission electron microscopy (LC-TEM) allows dynamic nanoscale characterization of systems in a hydrated state. Although powerful, this technique remains impaired by issues of repeatability that limit experimental fidelity and hinder the identification and control of some variables underlying observed dynamics. We detail new LC-TEM devices that improve experimental reproducibility by expanding available imaging area and providing a platform for investigating electron flux history on the sample. Irradiation history is an important factor influencing LC-TEM results that has, to this point, been largely qualitatively and not quantitatively described. We use these devices to highlight the role of cumulative electron flux history on samples from both nanoparticle growth and biological imaging experiments and demonstrate capture of time zero, low-dose images on beam-sensitive samples. In particular, the ability to capture pristine images of biological samples, where the acquired image is the first time that the cell experiences significant electron flux, allowed us to determine that nanoparticle movement compared to the cell membrane was a function of cell damage and therefore an artifact rather than visualizing cell dynamics in action. Lastly, these results highlight just a subset of the new science that is accessible with LC-TEM through the new multiwindow devices with patterned focusing aides.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2026

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in situ and ex situ 63 MeV proton irradiation

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in situ and ex situ 63 MeV proton irradiation to assess their generation and recombination dynamics. Pre-irradiation, the n-type InAs absorbing region, exhibits a steadily increasing minority carrier lifetime with increasing temperature, providing evidence that excited minority carriers may be recombining via shallow defect levels. From deep-level transient spectroscopy, two features are found between 10 and 275 K: a low temperature broad “shoulder,” which suggests emission from multiple shallow electron defect levels with energies <29 meV and a high temperature minimum occurring at ∼230 K with an activation energy of 539 meV, which suggests a defect in the barrier layer in the device. Two similar nBn detectors are then subjected to 63 MeV proton irradiation in step doses and measured between steps. One experiment is performed in situ with an nBn held at ∼10 K during dosing, and the other experiment is performed ex situ with a similar nBn held at room temperature for dosing. The ex situ dosing results in an evaluation of the defect introduction rate that is three to four times lower than in situ due to partial annealing of the proton-induced displacement damage at room temperature. The results of these two experiments are then compared with the dose-dependent recombination rate analysis, resulting in an estimated recombination defect cross section of 1.6 × 10 −13 cm 2 for the shallow shoulder defect.

Carrasco, Rigo A. [Air Force Research Laboratory (↗

DOE OSTI2018

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2 B 2 O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2 Ti 2 O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. We also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2 B 2 O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

The susceptibility of TaO x -based memristors to high dose rate ionizing radiation and total ionizing dose

This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaO x ) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 ×10 7 rad(Si)/s to 4.7 ×10 8 rad(Si)/s and for pulse widths ranging from 50 ns to 50 μs. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of ~3.0 ×10 8 rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaO x memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. As a result, numerical simulations are used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗