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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Temperature effects in spin-dependent Hall currents in an ideal skyrmion gas

The quest of novel reliable and fast performing logic and memory elements in classical and quantum computing requires discoveries of new effects in novel quantum materials. Skyrmions are such magnetic textures where electron scattering can essentially change the shape and location of the skyrmion, which can be used as a memory element being more efficient than domain walls as memory device in classical computing. Because the skyrmion motion is sensitive even to very small currents, we study electron scattering by skyrmions in an ideal skyrmion gas in ferromagnetic environment. In such systems, the direct and Hall currents become spin-dependent. For applications it is important to consider a Hall effect in the whole range of temperatures under the assumption of the skyrmion existence. In this study we find the nonmonotonic temperature dependence of the direct spin-up conductivity, i. e., the conductivity for the current directed along the applied electric field due to the electrons with the spin parallel to the ferromagnetic moment. Such a behavior contradicts the traditional understanding where the temperature only increases the value of the conductivity. The spin-down Hall conductivity is found to be even more dramatic exhibiting the conductivity sign change (i.e., the change in the current direction) with temperature for small skyrmion sizes. The found effects strongly depend on Fermi energy. The most pronounced dependencies take place if the Fermi energy is slightly below and above the bottom of the upper (spin-down) energy band of an ideal 2D electron gas. In addition, we also find that the direct and Hall resistivities, ρ xx and ρ xy , are independent of the exchange integral J for 2J > ε F .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Enhancing Streamflow Forecast and Extracting Insights Using Long-Short Term Memory Networks With Data Integration at Continental Scales

Recent observations with varied schedules and types (moving average, snapshot, or regularly spaced) can help to improve streamflow forecasts, but it is challenging to integrate them effectively. Based on a long short-term memory (LSTM) streamflow model, we tested multiple versions of a flexible procedure we call data integration (DI) to leverage recent discharge measurements to improve forecasts. DI accepts lagged inputs either directly or through a convolutional neural network unit. DI ubiquitously elevated streamflow forecast performance to unseen levels, reaching a record continental-scale median Nash-Sutcliffe Efficiency coefficient value of 0.86. Integrating moving-average discharge, discharge from the last few days, or even average discharge from the previous calendar month could all improve daily forecasts. Directly using lagged observations as inputs was comparable in performance to using the convolutional neural network unit. Importantly, we obtained valuable insights regarding hydrologic processes impacting LSTM and DI performance. Before applying DI, the base LSTM model worked well in mountainous or snow-dominated regions, but less well in regions with low discharge volumes (due to either low precipitation or high precipitation-energy synchronicity) and large interannual storage variability. DI was most beneficial in regions with high flow autocorrelation: it greatly reduced baseflow bias in groundwater-dominated western basins and also improved peak prediction for basins with dynamical surface water storage, such as the Prairie Potholes or Great Lakes regions. However, even DI cannot elevate performance in high-aridity basins with 1-day flash peaks. Despite this limitation, there is much promise for a deep-learning-based forecast paradigm due to its performance, automation, efficiency, and flexibility.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing

As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.

42 ENGINEERING↗
NASA NTRS1975

Performance of coded MFSK in a Rician fading channel

The performance of convolutional codes in conjunction with noncoherent multiple frequency shift-keyed (MFSK) modulation and Viterbi maximum likelihood decoding on a Rician fading channel is examined in detail. While the primary motivation underlying this work has been concerned with system performance on the planetary entry channel, it is expected that the results are of considerably wider interest. Particular attention is given to modeling the channel in terms of a few meaningful parameters which can be correlated closely with the results of theoretical propagation studies. Fairly general upper bounds on bit error probability performance in the presence of fading are derived and compared with simulation results using both unquantized and quantized receiver outputs. The effects of receiver quantization and channel memory are investigated and it is concluded that the coded noncoherent MFSK system offers an attractive alternative to coherent BPSK in providing reliable low data rate communications in fading channels typical of planetary entry missions.

Modestino, J. W.↗
NASA NTRS1987

Practical implementation of an accurate method for multilevel design sensitivity analysis

Solution techniques for handling large scale engineering optimization problems are reviewed. Potentials for practical applications as well as their limited capabilities are discussed. A new solution algorithm for design sensitivity is proposed. The algorithm is based upon the multilevel substructuring concept to be coupled with the adjoint method of sensitivity analysis. There are no approximations involved in the present algorithm except the usual approximations introduced due to the discretization of the finite element model. Results from the six- and thirty-bar planar truss problems show that the proposed multilevel scheme for sensitivity analysis is more effective (in terms of computer incore memory and the total CPU time) than a conventional (one level) scheme even on small problems. The new algorithm is expected to perform better for larger problems and its applications on the new generation of computer hardwares with 'parallel processing' capability is very promising.

Nguyen, Duc T.↗
NASA NTRS1990

Porous-Floating-Gate Field-Effect Transistor

Porous-floating-gate, "vertical" field-effect transistor proposed as programmable analog memory device especially suitable for use in electronic neural networks. Analog value of electrical conductance of device represents synaptic weight (strength of synaptic connection) repeatedly modified by application of suitable writing or erasing voltage. Suited for hardware implementations of massively parallel neural-network architectures for two important reasons: vertical transistor structure requires only two external electrodes, and use of tailored amorphous semiconductors provides choice of very wide range of low conductivity values, dictated by overall power dissipation requirements in massively parallel neural-network circuits.

Thakoor, Anilkumar P.↗
NASA NTRS1991

Multiple-Bit Errors Caused By Single Ions

Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.

Zoutendyk, John A.↗
NASA NTRS1992

Model-driven mapping onto distributed memory parallel computers

The author addresses the problem of exploiting the parallelism available in a program to efficiently employ the resources of the target machine in the context of building a mapping compiler for a distributed memory parallel machine. He demonstrates the effectiveness of using execution models to select the best mapping technique from among those available for a given program segment on a particular machine. Through analysis of the execution models for several mapping techniques for one class of programs on a linear processor array, it is shown that selecting the best technique for a particular program instance can make a significant difference in performance. On the other hand, the results of benchmarks from a mapping compiler for the Warp systolic array machine show that the execution models considered are accurate enough to select the best mapping technique for a given program.

Sussman, Alan↗
NASA NTRS1998

A Measurement and Simulation Based Methodology for Cache Performance Modeling and Tuning

We present a cache performance modeling methodology that facilitates the tuning of uniprocessor cache performance for applications executing on shared memory multiprocessors by accurately predicting the effects of source code level modifications. Measurements on a single processor are initially used for identifying parts of code where cache utilization improvements may significantly impact the overall performance. Cache simulation based on trace-driven techniques can be carried out without gathering detailed address traces. Minimal runtime information for modeling cache performance of a selected code block includes: base virtual addresses of arrays, virtual addresses of variables, and loop bounds for that code block. Rest of the information is obtained from the source code. We show that the cache performance predictions are as reliable as those obtained through trace-driven simulations. This technique is particularly helpful to the exploration of various "what-if' scenarios regarding the cache performance impact for alternative code structures. We explain and validate this methodology using a simple matrix-matrix multiplication program. We then apply this methodology to predict and tune the cache performance of two realistic scientific applications taken from the Computational Fluid Dynamics (CFD) domain.

Waheed, Abdul↗
NASA NTRS2003

Scalability of a Low-Cost Multi-Teraflop Linux Cluster for High-End Classical Atomistic and Quantum Mechanical Simulations

Scalability of a low-cost, Intel Xeon-based, multi-Teraflop Linux cluster is tested for two high-end scientific applications: Classical atomistic simulation based on the molecular dynamics method and quantum mechanical calculation based on the density functional theory. These scalable parallel applications use space-time multiresolution algorithms and feature computational-space decomposition, wavelet-based adaptive load balancing, and spacefilling-curve-based data compression for scalable I/O. Comparative performance tests are performed on a 1,024-processor Linux cluster and a conventional higher-end parallel supercomputer, 1,184-processor IBM SP4. The results show that the performance of the Linux cluster is comparable to that of the SP4. We also study various effects, such as the sharing of memory and L2 cache among processors, on the performance.

Kikuchi, Hideaki↗
NASA NTRS2004

A Scalable Nonuniform Pointer Analysis for Embedded Program

In this paper we present a scalable pointer analysis for embedded applications that is able to distinguish between instances of recursively defined data structures and elements of arrays. The main contribution consists of an efficient yet precise algorithm that can handle multithreaded programs. We first perform an inexpensive flow-sensitive analysis of each function in the program that generates semantic equations describing the effect of the function on the memory graph. These equations bear numerical constraints that describe nonuniform points-to relationships. We then iteratively solve these equations in order to obtain an abstract storage graph that describes the shape of data structures at every point of the program for all possible thread interleavings. We bring experimental evidence that this approach is tractable and precise for real-size embedded applications.

Venet, Arnaud↗
NASA NTRS2007

Nonvolatile Analog Memory

A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

MacLeod, Todd C.↗
NASA NTRS2018

Detecting Spacecraft Anomalies Using LSTMs and Nonparametric Dynamic Thresholding

As spacecraft send back increasing amounts of telemetry data, improved anomaly detection systems are needed to lessen the monitoring burden placed on operations engineers and reduce operational risk. Current spacecraft monitoring systems only target a subset of anomaly types and often require costly expert knowledge to develop and maintain due to challenges involving scale and complexity. We demonstrate the effectiveness of Long Short-Term Memory (LSTMs) networks, a type of Recurrent Neural Network (RNN), in overcoming these issues using expert-labeled telemetry anomaly data from the Soil Moisture Active Passive (SMAP) satellite and the Mars Science Laboratory (MSL) rover, Curiosity. We also propose a complementary unsupervised and nonparametric anomaly thresholding approach developed during a pilot implementation of an anomaly detection system for SMAP, and offer false positive mitigation strategies along with other key improvements and lessons learned during development.

Soderstrom, Tom↗
NASA NTRS1994

A Perceptual Repetition Blindness Effect

Before concluding Repetition Blindness is a perceptual phenomenon, alternative explanations based on memory retrieval problems and report bias must be rejected. Memory problems were minimized by requiring a judgment about only a single briefly displayed field. Bias and sensitivity effects were empirically measured with an ROC-curve analysis method based on confidence ratings. Results from five experiments support the hypothesis that Repetition Blindness can be a perceptual phenomenon.

Hochhaus, Larry↗
DOE OSTI2025

Effect of Gamma Radiation on TaOₓ ECRAM

Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.

ECRAM↗
DOE OSTI2022

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

36 MATERIALS SCIENCE↗