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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Electronegative ligands enhance charge transfer to Mn 12 single-molecule magnets deposited on graphene

Combining single-molecule magnets (SMMs) and emergent two-dimensional substrates such as graphene may lead to device configurations that are promising for spintronics and quantum computing. Yet, to fully consider the unique features of SMMs anchored to two-dimensional substrates, the choice of ligand attachments, which could affect the magnetic and electronic properties, is critical. In this work, we focus on hybrid junctions comprising CVD-grown graphene and [Mn 12 O 12 (O 2 CR) 16 (H 2 O) 4 ]( R = CH 3 , CHCl 2 ) SMMs with different ligands. We find that [Mn 12 O 12 (O 2 CCH 3 ) 16 (H 2 O) 4 ] SMMs barely change the graphene’s conductivity, while [Mn 12 O 12 (O 2 CCHCl 2 ) 16 (H 2 O) 4 ] SMMs with more electronegative ligands, by means of charge transfer, remarkably modify the electronic transport in graphene as revealed by gate-voltage dependent magnetotransport measurements.

74 ATOMIC AND MOLECULAR PHYSICS↗

Cryogenically enhanced quasi-optical resonator for megawatt pulsed millimeter-wave sources

We report the design, cryogenic optimization, and performance modeling of a compact quasi-optical ring resonator intended to compress microwaves pulses at 170 and 250 GHz to the megawatt level. By combining ultra-low-loss CVD diamond and gold-doped silicon wafers with high-RRR copper mirrors, the calculated unloaded quality factor exceeds 4.3 × 10 5 at 20 K and yields simulated gains up to $\mathscr{G}$ = 4.1 × 10 3 . Coupling the resonator with a laser-driven semiconductor switch described by an extended Vogel model shows that 1 MW, nanosecond pulses can be generated from only 445 W of microwave drive power while dissipating 272 W into the cryostat. A practical cooling architecture using two Gifford–McMahon stages (20 and 80 K) is proposed, demonstrating that high-repetition-rate (10–20 kHz) operation is feasible with commercially available cryocoolers. The results outline a clear path toward cost-effective, table-top sources for extreme-ultraviolet lithography, dynamic nuclear polarization, and fusion systems.

Panisset, Constant [Ecole Polytechnique Federale L↗

Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS 2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals, respectively. Time-resolved experiments indicate that the critical process for photoexcited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the long-lived photoconductivity signal is higher in chemical-vapor deposited (CVD) samples than exfoliated monolayers due to the presence of traps that inhibits recombination. Overall, our work reveals the intrinsic time and length scales of electrical response to photoexcitation in van der Waals materials, which is essential for their applications in optoelectronic devices.

42 ENGINEERING↗

Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS 2 and WSe 2

Understanding the physical properties and controlling the generation of intrinsic and extrinsic defects is central to the technological adoption of 2D materials in devices. Here we identify a charged carbon-hydrogen complex at a chalcogen site (CH X ) as a common, charged impurity in synthetically grown transition metal dichalcogenides (TMDs). This conclusion is drawn by comparing high resolution scanning probe microscopy measurements of nominally undoped and intentionally carbon doped TMD samples. While CH impurity densities in undoped CVD-grown WS 2 and MOCVD-grown WSe 2 can range anywhere from parts per million to parts per thousand, CH densities in the percentage levels were selectively generated by a post-synthetic methane plasma treatment. Our study indicates that methane plasma treatment is a selective and clean method for the controlled introduction of a charged carbon-hydrogen complex at a surface chalcogen site, adefect that is commonly present in synthetic TMDs.

36 MATERIALS SCIENCE↗

A multiscale insight into the growth of h-BN: effect of the enclosure

Abstract There is a lack of knowledge on the fundamental growth mechanisms governing the characteristics of 2D materials synthesized by the chemical vapor deposition (CVD) technique and their correlation with experimentally controllable parameters, which hindered their wafer-scale synthesis. Here, we pursued an analytical and computational approach to access the system states that are not experimentally viable to address these critical needs. We developed a multiscale computational framework correlating the macroscale heat and mass flow with the mesoscale morphology of the as-grown 2D materials by solving the coupled system of heat/mass transfer and phase-field equations. We used hexagonal boron nitride (h-BN) as our model material and investigated the effect of substrate enclosure on its growth kinetics and final morphology. We revealed a lower concentration with a more uniform distribution on the substrate in an enclosed-growth than open-growth. It leads to a more uniform size distribution of the h-BN islands, consistent with existing experimental investigations.

Materials Science↗

Assessing the quality of large-area monolayer graphene grown on liquid copper for size-selective ionic/molecular membrane separations

Monolayer graphene growth on liquid copper (Cu) has attracted attention due to advantages of a flat/smooth catalytic growth surface, high synthesis temperature (>1080 °C) as well as the possibility of forming graphene domains that are mobile on the liquid Cu with potential to minimize grain boundary defects and self-assemble into a continuous monolayer film. However, the quality of monolayer graphene grown on liquid copper and its suitability for size-selective ionic/molecular membrane separations has not been evaluated/studied. Here, we probe the quality of monolayer graphene grown on liquid Cu (via a metallurgical process, HSMG ® ) using Scanning Electron Microscope (SEM), High-resolution transmission electron microscope (HR-TEM), Raman spectroscopy and report on a facile approach to assess intrinsic sub-nanometer to nanometer-scale defects over centimeter-scale areas. We demonstrate high transfer yields of monolayer graphene (>93% coverage) from the growth substrate to polyimide track etched membrane (PITEM, pore diameter ~200 nm) supports to form centimeter-scale atomically thin membranes. Next, we use pressure-driven transport of ethanol to probe defects > 60 nm and diffusion-driven transport of analytes (KCl ~0.66 nm, L-Tryptophan ~0.7–0.9 nm, Vitamin B12 ~1–1.5 nm and Lysozyme ~3.8–4 nm) to probe nanoscale and sub-nanometer scale defects. Diffusive transport confirms the presence of intrinsic sub-nanometer to nanometer scale defects in monolayer graphene grown on liquid Cu are no less than that in high-quality graphene synthesized via chemical vapor deposition (CVD) on solid Cu. Our work not only benchmarks quality of graphene grown on liquid copper for membrane applications but also provides fundamental insights into the origin of intrinsic defects in large-area graphene synthesized via bottom-up processes for membrane applications.

36 MATERIALS SCIENCE↗

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Late Life Supplementation of 25‐Hydroxycholesterol Reduces Aortic Stiffness and Cellular Senescence in Mice

ABSTRACT Stiffening of the aorta is a key antecedent to cardiovascular diseases (CVD) with aging. Age‐related aortic stiffening is driven, in part, by cellular senescence—a hallmark of aging defined primarily by irreversible cell cycle arrest. In this study, we assessed the efficacy of 25‐hydroxycholesterol (25HC), an endogenous cholesterol metabolite, as a naturally occurring senolytic to reverse vascular cell senescence and reduce aortic stiffness in old mice. Old (22–26 months) p16‐3MR mice, a transgenic model allowing for genetic clearance of p16‐positive senescent cells with ganciclovir (GCV), were administered vehicle, 25HC, or GCV to compare the efficacy of the experimental 25HC senolytic versus genetic clearance of senescent cells. We found that short‐term (5d) treatment with 25HC reduced aortic stiffness in vivo, assessed via aortic pulse wave velocity (p = 0.002) to a similar extent as GCV. Ex vivo 25HC exposure of aorta rings from the old p16‐3MR GCV‐treated mice did not further reduce elastic modulus (measure of intrinsic mechanical stiffness), demonstrating that 25HC elicited its beneficial effects on aortic stiffness, in part, through the suppression of excess senescent cells. Improvements in aortic stiffness with 25HC were accompanied by favorable remodeling of structural components of the vascular wall (e.g., lower collagen‐1 abundance and higher α‐elastin content) to a similar extent as GCV. Moreover, 25HC suppressed its putative molecular target CRYAB, modulated CRYAB‐regulated senescent cell anti‐apoptotic pathways, and reduced markers of cellular senescence. The findings from this study identify 25HC as a potential therapy to target vascular cell senescence and reduce age‐related aortic stiffness.

Cell Biology↗

Observed volatilization behavior of silicon carbide in flowing hydrogen above 2000 K

In this work, the intrinsic compatibility of silicon carbide (SiC) and hydrogen (H 2 ) at high temperatures (2000-2473 K) and pressure near one atmosphere was evaluated through a combination of thermodynamic calculations and hot hydrogen exposure testing. Thermodynamic calculations predict the decomposition of SiC in a hydrogen environment to form free silicon (Si) and free carbon (C). Free Si is predicted to vaporize from the surface as a volatile species, while free C may interact with H 2 to form the hydrocarbons CH 4 (T < 2100 K) or C 2 H 2 (T > 2100 K). Coupons of high purity chemical vapor deposition (CVD) β-SiC were exposed to slowly flowing hydrogen at temperatures ranging between 2000 and 2473 K. SiC experienced active attack as the result of H 2 exposure, exhibiting linear weight loss kinetics and an Arrhenius dependence of weight loss on exposure temperature. The linear volatilization constant was experimentally evaluated to correspond with an activation energy of 370 ± 18 kJ/mol. Due to the dependence of observed corrosion rates on gas velocity, corrosion of SiC in flowing H 2 was determined to be governed by external mass transfer of volatile Si species through the boundary layer. Experimentally derived mass losses were in good agreement with mass losses predicted by a boundary layer limited gas diffusion model.

36 MATERIALS SCIENCE↗

SiC Substrate Composition Effect on TGO Scale Growth in EBC Systems During High‐Temperature Steam Exposure

A systematic investigation was conducted on the oxidation behavior of silicon-bond coats within environmental barrier coating (EBC) systems applied to Si-carbide (SiC) substrates, aiming to understand how different underlying SiC substrates influence the bond coat's thermally grown oxide (TGO) and its properties. The study examined (Y/Yb) 2 Si 2 O 7 /Si coatings on three cost-effective surrogate SiC substrates (chemical vapor deposition [CVD]-grown β-SiC, sintered α-SiC, and reaction-bonded [RB] SiC) for SiC fiber /SiC matrix ceramic matrix composites (CMCs). Discrepancies in TGO growth were observed, with noticeably higher growth rates reported for the coated CMC specimens than for the four monolithic SiC specimens. The CMC samples produce an amorphous TGO, whereas the other monolithic substrates formed a crystalline TGO, which lowered the oxygen permeability through the SiO 2 scale. In conclusion, the vitrification of the TGO in the (Y/Yb) 2 Si 2 O 7 /Si/CMC system resulted from the migration of boron species from the CMC substrate to the SiO 2 scale, leading to network modification via boron doping.

EBC↗

Predicting EBC Temperature Limits for Industrial Gas Turbines

Higher turbine inlet temperatures may require the use of ceramic matrix composites (CMC) such as SiC/SIC, which require environmental barrier coatings (EBCs) to protect them against the detrimental effect of water vapor. Here, the goal of this project is to determine the maximum bond coating temperature for EBCs for land-based turbines, where the minimum coating lifetime is 25,000 h. If the temperature exceeds the 1414°C melting point of the Si bond coating, then coatings without a bond coating also need to be evaluated. Thus, current Yb 2 Si 2 O 7 EBCs with a Si bond coating and next-generation EBCs without a Si bond coating are being evaluated in laboratory testing using 1-h cycles in air+90%H 2 O. For this initial work, coatings were deposited on CVD SiC coupons. Reaction kinetics at 1250°, 1300° and 1350°C have been evaluated by measuring the thickness of the thermally grown silica scale after 100–500 h exposures. For comparison, scale growth rates for uncoated SiC and Si specimens in dry and wet environments were included as minimum and maximum values, respectively. Based on a critical scale thickness failure criteria, estimated maximum temperatures were calculated for both EBC systems using this initial data.

42 ENGINEERING↗

Comparing Exciton-Polariton Couplings in Two-Dimensional MoS2 Cavities

Exciton-polaritons (EPs) are an emerging approach to achieve strong light-matter coupling and robust quantum phenomena, with application to areas such as photonic neuromorphic computing for instance reservoir computing. 2D transition metal dichalcogenides (TMDs) are promising candidates to host EPs due to their potential for strong coupling as evidenced by large Rabi splitting energies, which in the case of few-layer MoS2 has been demonstrated to reach 293 meV when coupled to the C exciton, placing it in the ultrastrong coupling regime, at room temperature. Here we examine how the Rabi splitting of CVD-grown monolayer MoS2 in a cavity can be optimized by tuning two variables: cavity geometry (thickness of silver and dielectric spacers) and the targeted exciton for coupling (A at about 1.9 eV, B at about 2.06 eV, or C at about 2.9 eV). With the cavity geometry, there is a tradeoff between optical field confinement and transmission. With the targeted exciton, there may be a tradeoff between Rabi splitting and lifetime. Transfer matrix simulations are used to inform how thick the cavity layers need to be, and at what angle measurements should be performed, to achieve Rabi splitting at a certain exciton energy. Experimentally, the Rabi splitting is measured by placing the cavity at a specified angle and measuring the optical reflectance and transmittance. By fitting the data, we find Rabi splittings of 124 meV, 194 meV, and 288 meV for the A, B, and C excitons, respectively, which places them in the strong, and on the edge of the ultrastrong, coupling regime.

exciton-polaritons↗

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

Abstract Over the past decades, zinc oxide semiconductor and its derivatives have been extensively developed because of its optoelectronic properties. Since ZnO is an intrinsic n-type semiconductor, how to synthesize high-quality p-type ZnO semiconductors and investigate their optoelectronic properties and local chemical structures are important and necessary. In this article, two studies of synthesizing both undoped and phosphorus-doped ZnO nanostructures by hydrothermal method and chemical vapor deposition (CVD) technique are presented. Scanning electron microscopy (SEM) and laboratory X-ray diffraction (XRD) are used to track the surface morphology and the crystalline structure of both undoped and phosphorus doped ZnO nanostructures, respectively. X-ray absorption near edge structures (XANES), X-ray emission spectroscopy (XES) and X-ray excited optical luminescence (XEOL) are also used to determine the local chemical information of both undoped and phosphorus-doped ZnO nano/microstructures such as local symmetry and optical properties. It is found that the phosphorus is successfully doped into the surface of ZnO and substituted the Zn. The phosphorus-doped ZnO products have better crystallinity and less oxygen vacancies on the surface. These two are correlated as one leads to the other. The XEOL results suggest that the average bandgap for undoped and phosphorus doped ZnO is the same, 3.24 eV. The second derivative of the absorption-emission spectra yields the fundamental bandgap for undoped ZnO and phosphorus-doped ZnO is 3.25 eV. The implication of this observation is discussed.

Chemistry↗

Fast Scanning Diamond Detector for Electron Beam Profile Monitoring

The first prototype of a fast scanning diamond beam profile detector (DBPD) suitable for invasive high power CW electron beam core profile measurements in transmittance mode was developed. It consists of a multi-strip solid state diamond detector to scan with high speed (up to 1 m/s) and precision (about 5 μm) through the core of an electron beam. The diamond sensor was made from a thin polycrystalline diamond (PCD) plate with highly B-doped diamond conductive strips both grown by CVD. Transient currents from the multi-strip detector were measured with fast digitizing electrometers. Successful operation of the DBPD was demonstrated for pulsed (5 Hz) and CW (78 kHz) CeC beams, including the detector’s ability to withstand a 20 sec insertion into the CW CeC beam core. The X-Y beam spatial profile was measured in one scan. Thermal modelling demonstrated a manageable thermal impact even from a relatively long insertion of the diamond sensor into the CW CeC core and very short (0.2 s) insertion into the CW LEReC beam core. Electrical impedance modelling of the detector and vacuum chamber assembly demonstrated minimal impact on beam line impedance with diamond sensor insertion.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Mechanical and Thermophysical Properties of 3D-Printed SiC-FY20

In the Transformational Challenge Reactor (TCR), the fuel blocks consist of an additively-manufactured silicon carbide (SiC) matrix and uranium nitride tristructural isotropic (UN TRISO) fuel particles, which are stacked to form fuel columns. The SiC matrix is manufactured using binderjet 3D printing followed by loading the TRISO fuel particles and the chemical vapor infiltration (CVI) process. Because the fuel matrix is a primary component of the TCR core and its response to mechanical and thermal loads during operation is one of the most influential factors on the integrity of TCR core, testing and evaluation have focused on producing mechanical and thermophysical properties data for the binderjet/CVI SiC. Mechanical and thermophysical properties were measured from various types of specimens printed for two or three orientations, which included equibiaxial flexural failure strength, elastic constants, thermal diffusivity and conductivity, density, and the coefficient of thermal expansion. Flexural failure strength datasets showed similar Weibull distributions regardless of sample variants including different orientations. The mean failure strengths of the 3D-printed SiC variants were in the range of 286–306 MPa, which are 22–27% lower than that of the CVD SiC. Thermophysical test results showed that specific heat and thermal expansion are not sensitive to the build directions of SiC samples, while thermal diffusivity is highly dependent on the build direction and can be correlated to the anisotropic character of the 3D-printed SiC. This report also includes discussions on the uniaxial tensile properties of the as-printed SiC before CVI and on ongoing efforts for irradiation effects studies.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Hydrogen isotope fractionation using graphene and related 2-D materials. Final report

This report provides a final technical report and listing of products from the research on a research project from Clemson university, focused on use of two-dimensional materials within membranes to accomplish hydrogen ion separations. The project used CVD graphene and related 2D materials to accomplish hydrogen / deuterium / tritium (H/D/T) separation during water electrolysis in proton-exchange-membrane (PEM)-style cells. 2D materials were incorporated into PEM cells at varying places with the aim of accomplishing isotopic sieving through 2D materials by selective hydron transport at high rates and with high selectivity. The project work scope included studies on H/D separation with small-scale cells at Clemson, collaborative work between Clemson and SRNL on computational modeling and tritium separations, and issues associated with scaleup.

07 ISOTOPE AND RADIATION SOURCES↗

Mechanical and Thermophysical Properties of 3D-Printed SiC before and after Neutron Irradiation – FY21

This report presents the mechanical and thermophysical properties of 3D-printed SiC before and after neutron irradiation that have been evaluated to assess the fuel matrix material for the Transformational Challenge Reactor (TCR). The TCR fuel form consists of an additively-manufactured silicon carbide (SiC) matrix and uranium nitride tristructural isotropic (UN TRISO) fuel particles, which is manufactured through a newly developed processing route combining binderjet 3D printing, TRISO fuel particle loading, and chemical vapor infiltration (CVI). Because the fuel matrix is a primary component of the TCR core and its response to mechanical and thermal loads during operation is one of the most influential factors on the integrity of TCR core, testing and evaluation have focused on producing mechanical and thermophysical properties data for the binderjet/CVI SiC. Baseline mechanical and thermophysical properties were measured from the disk specimens printed for different and sizes orientations, which included equibiaxial flexural failure strength, elastic constants, thermal diffusivity and conductivity, density, and the coefficient of thermal expansion. Flexural failure strength datasets showed similar Weibull distributions regardless of sample variants including different orientations. The mean failure strengths of the 3D-printed SiC variants were in the range of 280–310 MPa, which are slightly lower than that of the chemical vapor deposition (CVD) SiC. Thermophysical test results showed that specific heat and thermal expansion are not sensitive to the build direction of SiC samples, while thermal conductivity is highly dependent on the build direction and can be correlated to the anisotropic character of the 3D-printed SiC. Neutron irradiation tests were carried out on the 3D-printed 6-mm diameter SiC disk specimens. Irradiation was carried to 2.3 dpa over a temperature range of 360–880°C. No significant degradation in strength was observed in SiC after irradiations in various conditions and with different orientations. Anisotropy that had been observed in the thermal conductivity of 3D-printed SiC prior to irradiation vanished after irradiation as the irradiation defect thermal resistivity accumulated in the material. Electron microscopy of the microstructure after neutron irradiation showed distinct defect morphologies in the heterogenous material, but no evidence for irradiation-induced cracking or degradation in the microstructure was observed.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Fabricating Diamond-like Amorphous Carbon

Using a magnetically confined hot hollow cathode PE-CVD, hydrocarbon gas is decomposed under a diluent gas to deposit hydrogenated amorphous carbon onto a sample holder. During the fabrication of the hydrogenated amorphous carbon, the electric potential, electron temperature, and electron density of the plasma are measured with a Langmuir probe. Raman spectroscopy is used to determine the structural and electronic characterization of the final hydrogenated amorphous carbon solid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗