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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Optical and holographic storage properties of F3, Cu, and Mg-doped lithium niobate

Several samples of iron, copper, and magnesium doped lithium niobate were tested to determine their storage properties which would be applicable to an optical data storage system and an integrated optics data preprocessor which makes use of holographic storage techniques. The parameters of interest were the diffraction efficiency, write power, write time, erase time, erase energy, and write sensitivity. Results of these parameters are presented. It was found that iron doped lithium niobate samples yielded the best results in all parameters except for a few percent higher diffraction efficiency in copper doped samples. The magnesium doped samples were extremely insensitive and are not recommended for use in holographic optical data storage and processing systems.

Beatty, M. E., III↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1983

GaAs MESFET with lateral non-uniform doping

An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.

Wang, Y. C.↗
NASA NTRS1988

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Malik, R. J.↗
NASA NTRS1990

Analysis of energy states in modulation doped multiquantum well heterostructures

A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

Ji, G.↗
NASA NTRS1991

Doping To Reduce Base Resistances Of Bipolar Transistors

Modified doping profile proposed to reduce base resistance of bipolar transistors. A p/p+ base-doping profile reduces base resistance without reducing current gain. Proposed low/high base-doping profile realized by such low-temperature deposition techniques as molecular-beam epitaxy, ultra-high-vacuum chemical-vapor deposition, and limited-reaction epitaxy. Produces desired doping profiles without excessive diffusion of dopant.

Lin, True-Lon↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS1939

Compression-ignition engine performance with undoped and doped fuel oils and alcohol mixtures

Several fuel oils, doped fuel oils, and mixtures of alcohol and fuel oil were tested in a high-speed, single-cylinder, compression-ignition engine to determine power output, fuel consumption, and ignition and combustion characteristics. Fuel oils or doped fuel oils of high octane number had shorter ignition lags, lower rates of pressure rise, and gave smoother engine operation than fuel oils or doped fuel oils of low octane number. Higher engine rotative speeds and boost pressures resulted in smoother engine operation and permitted the use of fuel oils of relatively low octane number. Although the addition of a dope to a fuel oil decreased the ignition lag and the rate of pressure rise, the ensuing rate of combustion was somewhat slower than for the undoped fuel oil so that the effectiveness of combustion was practically unchanged. Alcohol used as an auxiliary fuel, either as a mixture or by separate injection, increased the rates of pressure rise and induced roughness. In general, the power output decreased as the proportion of alcohol increased and, below maximum power, varied with the heating value of the total fuel charge.

Moore, Charles S↗
NASA NTRS1995

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

Schacham, S. E.↗
NASA NTRS2001

Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

Sunkara, M. K.↗
NASA NTRS1998

Doping Scheme of Semiconducting Atomic Chains

Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

Toshishige, Yamada↗
NASA NTRS2005

Silica Aerogels Doped with Ru(II) Tris 1,l0-Phenanthro1ine)-Electron Acceptor Dyads: Improving the Dynamic Range, Sensitivity and Response Time of Sol-Gel Based Oxygen Sensors

Complexes 1 and 2 were characterized in fluid and frozen solution and as dopants of silica aerogels. The intramolecular quenching efficiency of pendant 4-benzoyl-N-methylpyridinium group (4BzPy) is solvent dependent: emission is quenched completely in acetonitrile but not in alcohols. On the other hand, N-benzyl-N'-methylviologen (BzMeV) quenches the emission in all solvents completely. The differences are traced electrochemically to a stronger solvation effect by the alcohol in the case of 1. In fiozen matrices or absorbed on the surfaces of silica aerogel, both 1 and 2 are photoluminescent. The lack of quenching has been traced to the environmental rigidity. When doped aerogels are cooled to 77K, the emission shifts to the blue and its intensity increases in analogy to what is observed with Ru(II) complexes in media undergoing fluid-to-rigid transition. The photoluminescence of 1 and 2 from the aerogel is quenched by oxygen diffusing through the pores. In the presence of oxygen, aerogels doped with 1 can modulate their emission over a wider dynamic range than aerogels doped with 2, and both are more sensitive than aerogels doped with Ru(II) tris(1,l0- phenanthroline). In contrast to frozen solutions, the luminescent moieties in the bulk of aerogels kept at 77K are still accessible, leading to more sensitive platforms for oxygen sensors than other ambient temperature configurations.

Kevebtusm Bucgikas↗
NASA NTRS2006

Effects of Doping on Thermal Conductivity of Pyrochlore Oxides for Advanced Thermal Barrier Coatings

Pyrochlore oxides of general composition, A2B2O7, where A is a 3(+) cation (La to Lu) and B is a 4(+) cation (Zr, Hf, Ti, etc.) have high melting point, relatively high coefficient of thermal expansion, and low thermal conductivity which make them suitable for applications as high-temperature thermal barrier coatings. The effect of doping at the A site on the thermal conductivity of a pyrochlore oxide La2Zr2O7, has been investigated. Oxide powders of various compositions La2Zr2O7, La(1.7)Gd(0.3)Zr2O7, La(1.7)Yb(0.3)Zr2O7 and La(1.7)Gd(0.15)Yb(0.15)Zr2O7 were synthesized by the citric acid sol-gel method. These powders were hot pressed into discs and used for thermal conductivity measurements using a steady-state laser heat flux test technique. The rare earth oxide doped pyrochlores La(1.7)Gd(0.3)Zr2O7, La(1.7)Yb(0.3)Zr2O7 and La(1.7)Gd(0.15)Yb(0.15)Zr2O7 had lower thermal conductivity than the un-doped La2Zr2O7. The Gd2O3 and Yb2O3 co-doped composition showed the lowest thermal conductivity.

Bansal, Narottam P.↗
NASA NTRS2007

Recent Progress in the Development of Neodymium Doped Ceramic Yttria

Solid-state lasers play a significant role in providing the technology necessary for active remote sensing of the atmosphere. Neodymium doped yttria (Nd:Y2O3) is considered to be an attractive material due to its possible lasing wavelengths of aprrox.914 nm and approx.946 nm for ozone profiling. These wavelengths when frequency tripled can generate UV light at approx.305 nm and approx.315 nm, which is particularly useful for ozone sensing using differential absorption lidar technique. For practical realization of space based UV transmitter technology, ceramic Nd:Y2O3 material is considered to possess great potential. A plasma melting and quenching method has been developed to produce Nd3+ doped powders for consolidation into Nd:Y2O3 ceramic laser materials. This far-from-equilibrium processing methodology allows higher levels of rare earth doping than can be achieved by equilibrium methods. The method comprises of two main steps: (a) plasma melting and quenching to generate dense, and homogeneous doped metastable powders, (b) pressure assisted consolidation of these powders by hot isostatic pressing to make dense nanocomposite ceramics. Using this process, several 1" x 1" ceramic cylinders have been produced. The infrared transmission of undoped Y2O3 ceramics was as high as approx.75% without anti-reflection coating. In the case of Nd:Y2O3 ceramics infrared transmission values of approx.50% were achieved. Furthermore, Nd:Y2O3 samples with dopant concentrations of up to approx.2 at. % were prepared without significant emission quenching.

Prasad, Narasimha S.↗
NASA NTRS2008

CO2 Sensors Based on Nanocrystalline SnO2 Doped with CuO

Nanocrystalline tin oxide (SnO2) doped with copper oxide (CuO) has been found to be useful as an electrical-resistance sensory material for measuring the concentration of carbon dioxide in air. SnO2 is an n-type semiconductor that has been widely used as a sensing material for detecting such reducing gases as carbon monoxide, some of the nitrogen oxides, and hydrocarbons. Without doping, SnO2 usually does not respond to carbon dioxide and other stable gases. The discovery that the electrical resistance of CuO-doped SnO2 varies significantly with the concentration of CO2 creates opportunities for the development of relatively inexpensive CO2 sensors for detecting fires and monitoring atmospheric conditions. This discovery could also lead to research that could alter fundamental knowledge of SnO2 as a sensing material, perhaps leading to the development of SnO2-based sensing materials for measuring concentrations of oxidizing gases. Prototype CO2 sensors based on CuO-doped SnO2 have been fabricated by means of semiconductor-microfabrication and sol-gel nanomaterial-synthesis batch processes that are amendable to inexpensive implementation in mass production.

Xu, Jennifer C.↗
NASA NTRS2017

P-Compensated and P-Doped Superlattice Infrared Detectors

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of.about.10.mu.m.

Khoshakhlagh, Arezou↗
NASA NTRS1993

Long-Wavelength PtSi Infrared Detectors Fabricated by Incorporating a P+ Doping Spike Grown by Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelengthinfrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from thecombined effects of an increased electric field near the silicide/Si interface due to the p+ dopingspike and the Schottky image force. The p+ doping spikes were grown by molecular bema epitaxy at450 degrees C using elemental boron as the dopant source, with doping concentrations ranging from 5x 10^(19) to 2 x 10^(20) cm^(-3). Transmission electron microscopy indicated good crystallinequality of the doping spikes. The cutoff wavelengths were shown to increase with increasing dopingconcentrations of the p+ spikes. Thermionic emission dark current characteristics were observed andphotoresponse in the LWIR regime was demonstrated.

Maserjian, J.↗
DOE OSTI2023

Doping strategy for layered oxide electrode materials used in lithium-ion batteries

The present invention features a new way of doping layered cathode materials in lithium ion batteries. Using a “high entropy” doping strategy, more than four impurity elements can be introduced to the host materials. The present invention applies this high entropy doping strategy to a high nickel content layered oxide material and a lithium-manganese rich material. This new high entropy doping strategy allows the layered oxide materials used in the positive electrode of lithium ion battery to achieve high energy density, long life cycle and reduced reliance on the expensive and toxic cobalt, all of which are desired attributes for improving the performance of lithium ion batteries and reducing their cost.

Xin, Huolin↗