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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Bench-scale Development of a Transformational Graphene Oxide-based Membrane Process for Post-combustion CO 2 Capture

Graphene-based materials, such as graphene and graphene oxide (GO), have been considered as next-generation membrane materials. GTI Energy and The State University of New York at Buffalo (UB) have been developing a transformational GO-based membrane process (designated as GO2) that integrates a high CO 2 /N 2 selectivity membrane (GO-1) and a high CO 2 flux membrane (GO-2) for post-combustion CO 2 capture. An innovative membrane structure, consisting of GO nanochannels intercalated by single-walled carbon nanotube (SWCNT), was developed. The membrane prepared on hollow fiber substrate showed CO 2 permeance as high as 1,300 GPU with CO 2 /N 2 selectivity >200. The membranes were successfully scaled up to effective area of 50-100 cm 2 . The 50-100 cm 2 membranes showed CO 2 /N 2 selectivity ≥200 and CO 2 permeance ≥1,000 GPU for the GO-1 type, and CO 2 /N 2 selectivity ≥20 and CO 2 permeance ≥2,500 GPU for the GO-2 type. The CO 2 capture performance of the GO-based membranes was tested using a simulated flue gas. The testing results indicate that the GO-based membranes are stable in the presence of flue gas contaminants. The GO-based membranes were then further scaled up to a surface area of 1,000 cm 2 . Good stability was achieved during an integrated testing with GO-1 and GO-2 membranes using simulated flue gas. A bench-scale system was designed, constructed, and tested at the National Carbon Capture Center (NCCC). Good stability was achieved during testing of a single-stage process with >10 shutdowns/startups at NCCC. During the integrated testing, the membranes showed good stability at 50°C and 57°C. 70-90% CO 2 removal efficiencies and ≥95% CO 2 purity were validated during the steady state operation at NCCC. Techno-economic analysis indicates the GO2 membrane-based process technology provides a reduction in both the levelized cost of electricity (LCOE) and cost of capture when compared to the reference B12B case presented in the Cost and Performance Baseline for Fossil Energy Plants Volume 1: Bituminous Coal and Natural Gas to Electricity study prepared by the National Energy Technology Laboratory (NETL), before considering any system optimization or improvement opportunities. The benefits are primarily driven by a reduction in the equipment costs of the CO 2 capture process vs. the solvent-based reference process in NETL Case B12B as well as a decrease in the base plant size.

20 FOSSIL-FUELED POWER PLANTS↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

Physi-sorption of H 2 on pure and boron-doped graphene monolayers: A dispersion-corrected DFT study

Carbon based materials are of interest as potential candidates for H 2 storage. Earlier work has been inconclusive on the effect of boron doping on the energy of H 2 binding. However, earlier work has been inconclusive on the definitive effect of boron doping on the energy of H 2 binding, i.e. isosteric heats of adsorption (Qst). In this work, we completed a systematic DFT study to evaluate this effect, and found that doping graphene with boron provides only minor enhancement in H 2 binding. More importantly, the presence of the electron deficient boron into a graphene ring introduces a defect, such as terminal hydrogen or distortion from planarity, which creates hydrogen adsorption sites with slightly increased Qst. The increase is from ~ 5 kJ/mol H 2 for the pure carbon matrix to ~6 - 7 kJ/mol for the boron doped system. The more strongly bond H 2 is located near the defect and shows little direct interaction with the boron. Most significant enhancement is found in systems where H 2 is confined between layers at a distance of about 7Å. In this case, the H 2 binding nearly doubles, to ~10 kJ/mol for both pure, undistorted graphene, and the 2% boron doped system, containing tetrahedral C atom distortion. Interestingly, at higher doping levels of boron, we found that the Qst decreases compared to the all carbon materials. These finding suggest that interplanar nanoconfinement may be more effective way to enhance H 2 binding than boron doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

Melchioni, Nicola↗

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Miranda, Felix A.↗

Effect of Graphene Addition on Shape Memory Behavior of Epoxy Resins

Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

Williams, Tiffany↗

Graphene Chemical Sensor for Heliophysics Applications

Graphene is a single layer of carbon atoms that offer a unique set of advantages as a chemical sensor due to a number of its inherent properties. Graphene has been explored as a gas sensor for a variety of gases, and molecular sensitivity has been demonstrated by measuring the change in electrical properties due to the adsorption of target species. In this paper, we discuss the development of an array of chemical sensors based on graphene and its relevance to plasma physics due to its sensitivity to radical species such as oxonium, hydron and the corresponding neutrals. We briefly discuss the great impact such sensors will have on a number of heliophysics applications such as ground-based manifestations of space weather.

Sultana, Mahmooda↗

Graphene Field Effect Transistor for Radiation Detection

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Li, Mary J.↗

Metal Oxide Vertical Graphene Hybrid Supercapacitors

A metal oxide vertical graphene hybrid supercapacitor is provided. The supercapacitor includes a pair of collectors facing each other, and vertical graphene electrode material grown directly on each of the pair of collectors without catalyst or binders. A separator may separate the vertical graphene electrode materials.

Meyya Meyyappan↗

Effect of High-K Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high- dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A low-noise level of ~ 2.2  10-10 Hz-1 has been obtained at f = 10 Hz. The origin and physical mechanism of the noise can be interpreted by the McWhorter context, where fluctuations in the carrier number contribute dominantly to the low-frequency noise. Optimizing fabrication processes reduced the number of charged impurities in the graphene field-effect transistors. The study has provided insights into the underlying physical mechanisms of the noise at low-frequency for reducing the noise in graphene-based devices.

Yifei Wang↗

Three-dimensional deterministic graphene architectures formed using three-dimensional templates

In one embodiment, a composition of matter includes: a plurality of ligaments each independently comprising one or more layers of graphene; where the plurality of ligaments are arranged according to a deterministic three-dimensional (3D) pattern. In another embodiment, a method of forming a deterministic three-dimensional (3D) architecture of graphene includes: forming or providing a substrate structurally characterized by a predefined 3D pattern; forming one or more layers of metal on surfaces of the substrate; and forming one or more layers of graphene on surfaces of the metal.

36 MATERIALS SCIENCE↗

Low friction wear resistant graphene films

A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear-resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.

36 MATERIALS SCIENCE↗

Electrostatic graphene speaker

This disclosure provides systems, methods, and device associated with an electrostatically driven graphene speaker. In one aspect, the device includes a graphene membrane having a diameter of about 3 millimeters to about 11 millimeters, and a first electrode proximate a first side of the graphene membrane, the first electrode being electrically conductive. The device is a microphone or a loudspeaker.

Zhou, Qing↗

Low friction wear resistant graphene films

A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear-resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.

Sumant, Anirudha V.↗

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗

Tunable infrared pixels having unpatterned graphene layer and conductive metasurface

A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

Beechem, III, Thomas Edwin↗

Graphene embedded seal

Systems and processes for forming seals. The seals have graphene embedded in the seal. The graphene-embedded seals exhibit improved wear resistance over seals without graphene.

Erdemir, Ali↗