Search NASA⌕ Search

SEARCH · Search NASA

Results for “MAGNETRONS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Combined First-Principles and Experimental Investigation into the Reactivity of Codeposited Chromium–Carbon under Pressure

High-pressure synthesis in the diamond anvil cell suffers from the lack of a general approach for the control of precursor stoichiometry and homogeneity. Here, we present results from a new method we have developed that uses magnetron cosputtering to prepare stoichiometrically precise and atomically mixed amorphous films of Cr:C. Laser-heated diamond anvil cell experiments carried out on a flake of this sample at pressures between 13.5 and 24.3 GPa lead to the observation of Cr 3 C (Pnma) over the entire pressure range–in good agreement with our in-house theoretical predictions–but also reveal two other metastable phases that were not expected: a novel monoclinic chromium carbide phase and the NaCl-type CrC (Fm3̅m) phase. The unexpected stability of CrC is investigated by using first-principles methods, revealing a large stabilizing effect tied to substoichiometry at the carbon site. These results offer an important case study into the current limitations of crystal structure prediction methods with regard to phase complexity and bolster the growing need for advanced theoretical approaches that can more completely survey experimentally unexplored phase space.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Microstructures, mechanical behavior and strengthening mechanism of TiSiCN nanocomposite films

Recently, the arguments have existed in the strengthening mechanism and microstructural model of the nanocomposite film due to lack of the convincible experimental evidences. In this investigation, the quarternary TiSiCN nanocomposite films with the different C and Si contents are synthesized by the reactive-magnetron-sputtering technique. The TiSiCN film is characterized as the nanocomposite structure with the TiN nanocrystallites surrounded by the (Si 3 N 4 + C + CN x ) interface phase. When the C/Si content ratio is 2:2, the TiSiCN nanocomposite film is remarkably strengthened with the maximal hardness and elastic modulus of 46.1 GPa and 425 GPa, respectively. Meanwhile, the (Si 3 N 4 + C + CN x ) interfaces exhibit as a crystallized form, which can coordinate the growth misorientations and maintain the coherently epitaxial growth between the TiN nanocrystallites and interfaces. Through the high-resolution transmission electron microscopy (HRTEM) observations, this investigation firstly provides the direct experimental evidence for the crystallized feature of the interfaces when the TiSiCN nanocomposite film is strengthened, suggesting that the strengthening effect of the TiSiCN nanocomposite film can be attributed to the coherent-interface strengthening mechanism, which is expressed as the “nc-TiN/c-Si 3 N 4 /c-C/c-CN x ” model.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The role of low Gd concentrations on magnetisation behaviour in rare earth:transition metal alloy films

The magnetisation reversal behaviour as a function of composition was studied in low rare earth concentration alloys. 30 nm thick rare earth:transition-metal films of composition GdxCo 100-x , GdxFe 100-x and Gd x (Co 50 Fe 50 ) 100-x were prepared by magnetron sputtering, where x ranged from 4 to 13 atomic%. Magnetisation behaviour was studied using MOKE and Hall hysteresis measurements. The magnetic reversal behaviour as a function of Gd content is strongly dependent on the transition metal. With increasing Gd content the film structure transitions from crystalline to amorphous and the saturation magnetisation decreases linearly. For GdCo, the reversal field, Hc, increases by less than a factor of two with Gd doping of 11%, while for Fe, the coercivity falls by a factor of ten with 8% Gd. This may be attributed to changes in the crystalline morphology. GdCoFe shows a similar trend with Gd doping for the in-plane reversal field to that of GdFe. With 13% Gd in Fe there is evidence indicating the presence of a weak perpendicular magnetic anisotropy, PMA. With Gd doping the anomalous Hall resistivity of Co, Fe and CoFe increases significantly with the largest increase observed for GdCoFe.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Cu and Ni Co-sputtered heteroatomic thin film for enhanced nonenzymatic glucose detection

Abstract In this work, we report a wafer-scale and chemical-free fabrication of nickel (Ni) and copper (Cu) heteroatomic Cu–Ni thin films using RF magnetron sputtering technique for non-enzymatic glucose sensing application. The as-prepared wafer-scale Cu–Ni thin films exhibits excellent electrocatalytic activity toward glucose oxidation with a 1.86 μM detection limit in the range of 0.01 mM to 20 mM range. The Cu–Ni film shows 1.3- and 5.4-times higher glucose oxidation activity in comparison to the Cu and Ni electrodes, respectively. The improved electrocatalytic activity is attributed to the synergistic effect of the bimetallic catalyst and high density of grain boundaries. The Cu–Ni electrodes also possessed excellent anti-interference characteristics. These results indicate that Cu–Ni heteroatomic thin film can be a potential candidate for the development of non-enzymatic glucose biosensor because of its chemical free synthesis, excellent reproducibility, reusability, and long-term stability.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗
DOE OSTI2024

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Abstract We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS 2−x Se x thin film, indicated by a blue shift in the A 1g and E 1 g vibrational modes at 355 cm −1 and 255 cm −1 , respectively. This work is complemented by computing the thermodynamic stability of a MoS 2−x Se x phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Co-sputtered CuNi heteroatomic electrocatalyst for enhanced 5-hydroxymethylfurfural selective electrochemical conversion

The electrochemical conversion of biomass-derived 5-hydroxymethylfurfural (HMF) represents a promising, economically viable, and environmentally sustainable approach for producing value-added chemicals using renewable energy and in situ hydrogen generated through water electrolysis. However, the electrochemical hydrogenation (ECH) of HMF remains challenging due to the inherently low catalytic activity and selectivity of the electrodes, compounded by competition with the kinetically favored hydrogen evolution reaction (HER) in aqueous electrolytes. In this work, we demonstrate that Cu x Ni 100−x heteroatomic thin films, fabricated via direct current (DC) magnetron co-sputtering, achieve a more than one order of magnitude increase in the HMF to 2,5-Bis-hydroxymethylfuran (BHMF) conversion rate, with nearly 50% faradic efficiency (FE) for BHMF, when compared to pure Cu and Ni electrodes (~ 10% BHMF FE). Our results suggest that the synergistic interaction between Cu and Ni creates an optimal catalytic environment for both HMF and adsorbed hydrogen (H ads ) species, thereby enhancing BHMF formation through the ECH pathway.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Curvilinear magnetic effects in helicoid nanotubes

We report the fabrication and characterization of ferromagnetic helicoid nanotubes with a tunable surface curvature and chirality. Through combining focused electron beam induced deposition and magnetron sputtering we realize these complex curvilinear magnetic architectures. Electron holography reveals two distinct states: a single domain remanent state, with a magnetic chirality governed by the geometric chirality, and a vortex-anti-vortex domain wall, preferentially forming at areas of lower curvature. Micromagnetic simulations reveal how the geometry, specifically pitch and local surface curvature, affects the stability and formation of magnetic domain walls. Furthermore, we show that the interplay between magnetic and geometric chirality has a strong impact on domain wall motion, whereby a right-handed geometric chirality leads to faster domain wall motion and a left-handed geometry hinders domain wall transport. The results shown here highlight the potential of 3D magnetic architectures in spintronic devices and offer insights into how geometry and curvature affect the magnetization, the distribution of magnetic solitons and the motion of domain walls.

3D Nanomagnetism↗
DOE OSTI2016

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.

14 SOLAR ENERGY↗
DOE OSTI2018

Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

Single-crystalline-like germanium (Ge) templates were demonstrated on low-cost, flexible metal substrates and have been used to fabricate III–V materials and devices for photovoltaics and flexible electronics applications. However, these Ge templates, fabricated by magnetron sputtering or plasma enhanced chemical vapor deposition, contain a high density of defects. In order to improve the performance of optoelectronic devices made using the Ge templates, a homo-epitaxial Ge layer has been additionally grown by a liquid phase epitaxy (LPE) method. The LPE Ge layer is composed of significantly larger grains (~26 μm) compared to that of the Ge template (~200 nm). This large size of the LPE Ge grains effectively reduces the volume fraction of grain boundaries. The LPE Ge shows an out-of-plane texture Δω of ~0.63° and an in-plane texture ΔΦ of ~1.26°, which signify improvements of ~39.3% and ~76.6% compared to that of the vapor-deposited Ge template, respectively. Further, the LPE Ge is strain free, compared to the strained Ge template hetero-epitaxially grown on cerium oxide. Defects caused by low-angle grain boundaries, impurities and strain relaxation in the Ge template are found to be suppressed in the LPE Ge. The threading dislocation density is roughly estimated to be ~5 × 10 6 cm -2 in the LPE Ge compared to ~1 × 10 10 cm -2 in the Ge template.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Cathodic NH 4 + leaching of nitrogen impurities in CoMo thin-film electrodes in aqueous acidic solutions

Electrocatalytic reduction of dinitrogen (N 2 ) to ammonium (NH 4 + ) in acidic aqueous solutions was investigated at ambient temperature and pressure using a cobalt–molybdenum (CoMo) thin-film electrode prepared by magnetron reactive sputtering. Increased concentrations of ammonium ions (NH 4 + ) were consistently detected in the electrolyte using ion chromatography (IC) after constant-potential electrolysis at various potentials (≤-0.29 V vs. RHE). Using a newly developed analytical method based on ammonia derivatization, performing the experiments with 15 N 2 -labelled gas led however to the detection of increased 14 NH 4 + concentrations instead of 15 NH 4 + . X-ray photoelectron spectroscopic (XPS) analysis of the electrode surface revealed the presence of Mo[triple bond, length as m-dash]N and Mo–NH x species. Several contamination sources were identified that led to substantial increases in the concentration of ammonium ions, including 15 NH 3 impurities in 15 N 2 gas. The observed ammonium concentrations can be consistently ascribed to leaching of nitrogen ( 14 N) impurities incorporated in the CoMo film during the sputtering process. Therefore, researchers in the field are urged to adopt extended protocols to identify and eliminate sources of ammonia contamination and to very carefully monitor the ammonium concentrations in each experimental step.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2 /V 2 O 3 thin film

For VO 2 -based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2 O 3 interlayer. V 2 O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2 /V 2 O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Fabrication and efficiency measurement of a Mo/C/Si/C three material system multilayer Laue lens

In this letter we report on the manufacturing of a multilayer Laue lens (MLL) consisting of a multilayer stack with three materials: molybdenum and silicon as absorber and spacer layer, respectively, and carbon as transition layers. The design has four layers per period: Mo/C/Si/C. It yields 6000 zones, and provides an aperture of 50 μm. This allows the MLL structure to accept a large portion of the coherent part of the beam and achieving a small spot size. The MLL deposition was made by magnetron sputtering at the Fraunhofer IWS, the sectioning was done by laser cutting and subsequent focused ion beam milling to a thickness that provides a good efficiency for a photon energy of 12 keV. The diffraction efficiency as a function of the tilting angle has been measured at beamline 1-BM of the Advanced Photon Source. An efficiency of almost 40% has been achieved. This shows that the material system performs well compared to MLLs made of two-materials and that it is in an excellent agreement with the numerically calculated efficiency for a comparable molybdenum/silicon bilayer system lens. Here, we conclude that the three material system offers high efficiencies and is advantageous for stress reduction in MLLs.

36 MATERIALS SCIENCE↗
DOE OSTI2017

A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2 ) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effects of surface tension and viscosity on gold and silver sputtered onto liquid substrates

Here, we report on DC magnetron sputtering of gold and silver onto liquid substrates of varying viscosities and surface tensions. We were able to separate the effects of viscosity from surface tension by depositing the metals onto silicone oils with a range of viscosities. The effects of surface tension were studied by depositing the metals onto squalene, poly(ethylene glycol), and glycerol. It was discovered that dispersed nanoparticles were formed on liquids with low surface tension and low viscosity whereas dense films were formed on liquids with low surface tension and high viscosity. Nanoparticles were formed on both the liquid surface and within the bulk liquid for high surface tension liquids. Our findings can be used to tailor the metal and liquid interaction to fabricate particles and films for various applications in optics, electronics, and catalysis.

36 MATERIALS SCIENCE↗