NASA NTRS1972
Erase-mode optical recording characteristics of photochromic crystal wafers of CaF2:La,Na; CaF2:Ce,Na; SrTiO3:Ni,Mo,Al; and CaTiO3:Ni,Mo have been measured. An argon laser operating at 5145 A was used for both optical recording and optical readout. Sensitometric curves of optical-density change versus logarithm of exposure are shown for a number of erase-beam intensities between 0.2 mW/sq cm and 2 W/sq cm. In this range, time-intensity reciprocity holds for the CaF2 materials but fails for the titanates, particularly at low intensities. The dependences of sensitivity, gamma, and maximum transmission contrast ratio on wafer thickness and material are discussed. Wafers of SrTiO3, CaTiO3, and CaF2 exhibiting approximately equal maximum contrast ratios have relative sensitivities approximately in the ratio 5:2:1, respectively, at an erase intensity of 1 W/sq cm.