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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

High-Q CMOS-integrated photonic crystal microcavity devices

Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former’s low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Controlling Long-Lived Triplet Generation from Intramolecular Singlet Fission in the Solid State

The conjugated polymer poly(benzothiophene dioxide) (PBTDO1) has recently been shown to exhibit efficient intramolecular singlet fission in solution. We investigate the role of intermolecular interactions in triplet separation dynamics after singlet fission. We use transient absorption spectroscopy to determine the singlet fission rate and triplet yield in two polymers differing only by side-chain motif in both solution and the solid state. Whereas solid-state films show singlet fission rates identical to those measured in solution, the average lifetime of the triplet population increases dramatically and is strongly dependent on side-chain identity. These results show that it may be necessary to carefully engineer the solid-state microstructure of these 'singlet fission polymers' to produce the long-lived triplets needed to realize efficient photovoltaic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Scalable, low-cost ink-based processing of high-performance silver selenide thermoelectrics

The growing global energy demand and its accelerating contribution to climate change emphasize the urgent need for sustainable energy conversion/harvesting technologies. Thermoelectric (TE) devices offer a compelling route to directly convert waste heat into electricity and enable solid-state cooling without moving parts or harmful refrigerants. Achieving their full potential requires not only higher TE performance (zT) but also scalable, low-cost manufacturing processes. Here, we introduce a transformative ink-based processing approach for scalable manufacturing of high-performance silver selenide-based TE materials and devices. Using a simple, high-throughput ink-mixing and blade coating strategy, our Ag 2 Se-based materials under the optimized composition and processing conditions yield an ultrahigh room-temperature power factor of 2.8 mW m −1 K −2 , over 100% higher than baseline samples and a reproducible figure of merit zT of 1 at room temperature. A thermoelectric generator (TEG) achieves a very competitive power density of 112 mW cm −2 at a 90 °C temperature difference between the hot and cold sides of the device, which is among the highest reported for silver selenide-based TE devices to date. This facile, scalable ink-based processing establishes a practical pathway toward industrial-scale manufacturing and widespread adoption of thermoelectric devices, advancing sustainable energy technologies.

Bappy, Md. Omarsany [University of Notre Dame, IN ↗

Gallium Nitride Superjunction Transistor (Continued Funding Report)

The initial goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-ofthe-art devices. The approach of this project has been to utilize simulation tools to drive diffusion experiments and inform semiconductor device fabrication processes. VASP has been relied upon to simulate first principles diffusion mechanisms while SILVACO TCAD has been utilized to understand tradeoffs of the the critical dimensions in GaN devices.

42 ENGINEERING↗

Synthesis, Photophysical, Electrochemical and Thermal Investigation of Anthracene Doped 2-Naphthol Luminophors and their Thin Films for Optoelectronic Devices

A series of novel luminophors of 2-naphthol by doping anthracene were prepared using conventional solid state reaction technique. The photophysical, electrochemical and thermal properties were studied by Fluorescence spectroscopy, XRD, SEM, TGA-DSC and by Cyclic Voltammetry techniques. The thin films were characterized by Fluorescence spectroscopy. XRD study of fine grained powders exhibited sharp peaks which specify crystallinity and homogeneity of the doped luminophors. The fluorescence spectra of doped 2-naphthol exhibited emission of anthracene at 413 nm i.e. blue emission with instantaneous fluorescence quenching of 2-NP due to excitation energy transfer (EET). Electrochemical data specify that the HOMO and LUMO energy levels of the synthesized luminophors are in the range of 5.55–5.71 eV and 3.03–3.24 eV, respectively. TGA-DSC study confirmed thermal stability of prepared luminophors. Hence, overall study proposes that these luminophors seems applicable to be used as n-type materials for Optoelectronic devices.

36 MATERIALS SCIENCE↗

Quantitative Measurements of the Temperature-Dependent Microscopic and Macroscopic Dynamics of a Molecular Dopant in a Conjugated Polymer

Understanding the nature of dopant dynamics in the solid state is critical for improving the longevity and stability of organic electronic devices and for optimizing the doping-induced solubility control (DISC) patterning method. Here in this work, we use quasi-elastic neutron scattering (QENS) and fluorescence quenching techniques to develop a comprehensive picture of both the microscopic and macroscopic dynamics of the soluble p-type molecular dopant tetrafluoromethyloxycarbonyltricyanoquinodimethane (F4MCTCNQ) in the conductive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT). Specifically, fast dynamics (ps–ns) of the dopant, such as the methyl and the methoxycarbonyl group rotations, are observed in QENS experiments. From confocal fluorescence microscope experiments, longer-range/slower dopant diffusion (ms–days) is captured. However, in order to fit these data, it is necessary to incorporate a Langmuir isotherm equilibrium between the neutral and ionized dopant molecules. Ionized F4MCTCNQ is strongly favored by the equilibrium, but it diffuses 3 orders of magnitude slower than neutral species. Moreover, the macroscopic diffusion is found to depend mostly on the minority concentration of neutral dopant molecules in the film. In conclusion, the global diffusion coefficient of the monoester-substituted dopant F4MCTCNQ is shown to be more than an order of magnitude smaller than that of the widely used dopant F4TCNQ.

36 MATERIALS SCIENCE↗

Effective thermal conductivity in thermoelectric materials

Thermoelectric generators (TEGs) are solid state heat engines that generate electricity from a temperature gradient. Optimizing these devices for maximum power production can be difficult due to the many heat transport mechanisms occurring simultaneously within the TEG. In this paper, we develop a model for heat transport in thermoelectric materials in which an "effective thermal conductivity" (kappa(eff)) encompasses both the one dimensional steady-state Fourier conduction and the heat generation/consumption due to secondary thermoelectric effects. This model is especially powerful in that the value of kappa(eff) does not depend upon the operating conditions of the TEG but rather on the transport properties of the TE materials themselves. We analyze a variety of thermoelectric materials and generator designs using this concept and demonstrate that kappa(eff) predicts the heat fluxes within these devices to 5% of the exact value. (C) 2013 AIP Publishing LLC.

NESDPS Office of Nuclear Energy Space and Defense ↗

Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies

The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.

CVD↗

Optimal coupling of Ho W 10 molecular magnets to superconducting circuits near spin clock transitions

A central goal in quantum technologies is to maximize GT 2 , where G stands for the coupling of a qubit to control and readout signals and T 2 is the qubit’s coherence time. Furthermore, this is challenging, as increasing G (e.g., by coupling the qubit more strongly to external stimuli) often leads to deleterious effects on T 2 . Here, we study the coupling of pure and magnetically diluted crystals of Ho W 10 magnetic clusters to microwave superconducting coplanar waveguides. Absorption lines give a broadband picture of the magnetic energy level scheme and, in particular, confirm the existence of level anticrossings at equidistant magnetic fields determined by the combination of crystal field and hyperfine interactions. Such “spin clock transitions” are known to shield the electronic spins against magnetic field fluctuations. The analysis of the microwave transmission shows that the spin-photon coupling also becomes maximum at these transitions. The results show that engineering spin-clock states of molecular systems offers a promising strategy to combine sizable spin-photon interactions with a sufficient isolation from unwanted magnetic noise sources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Carbon-Based Quantum Information Science with Symmetry Protected Topological States (Final Report, DOE-BES award DE-SC0023105)

This research program established the scientific foundation for the rational, bottom-up design, synthesis, isolation, and investigation of symmetry-protected topological (SPT) electron spin qubits embedded in graphene nanoribbons (GNRs). The work focused on integrating atomically precise low-dimensional carbon nanostructures with emerging quantum logic architectures, providing a pathway toward scalable quantum materials for next-generation computing and sensing technologies. A central component of the program was the elucidation of fundamental relationships between real-space molecular architecture, local spin density distributions, electronic band dispersion, and energy level alignment in atomically precise GNR systems. These correlations define key operational parameters of SPT qubits and were systematically investigated to establish quantitative benchmarks against established molecular and solid-state spin qubit platforms. Attention was given to properties critical for quantum device performance, e.g. decoherence times, spectral sharpness of energy transitions, and tunable exchange interactions between spin states. The research demonstrated that these parameters can be engineered with atomic precision through scalable bottom-up synthetic strategies. Theory-guided design played a central role in identifying candidate structures hosting topologically protected spin states. Experimental validation was performed using both ensemble measurements and single-molecule characterization. In addition to advances in quantum materials synthesis, the program developed and applied spin-sensitive scanning probe microscopy techniques capable of directly probing quantum states and dynamic processes with atomic-scale spatial resolution. These capabilities enabled direct observation and characterization of quantum structures at the single-atom level. While the research activities were primarily hypothesis-driven fundamental investigations, the program adopted a comprehensive materials-by-design framework aimed at translating scientific discoveries into technological concepts compatible with scalable and intelligent manufacturing approaches.

36 MATERIALS SCIENCE↗

On the elastocaloric effect in CuAlBe shape memory alloys: A quantitative phase-field modeling approach

We report the reversible stress-induced phase transformation in shape memory alloys (SMAs) is a dissipative process during which heat is absorbed or released. The inherent temperature variations inside the material has an elastocaloric effect (eCE) with appealing applications in solid-state cooling technology such as compact and efficient on-board refrigeration system for eletronic devices. In this manuscript, we conduct the first study of eCE of CuAlBe SMAs utilizing phase-field modeling. For an applied stress of 500 MPa, the results for polycrystalline Cu-Al11-2Be (at. %) show a minimum adiabatic unloading temperature change of -10 K over a pseudoelastic window of 40 K. In the absence of plastic deformation, the material demonstrates good reproducibility of the eCE over a few loading–unloading cycles. The presence of plastic deformation is found to cause functional fatigue that deteriorates the cooling capacity; however, the coefficient of performance only decreases from 9.04 to 8.03, which is still a very good value. These results place CuAlBe as a frontrunner SMA for solid-state cooling compared to the expensive NiTi.

36 MATERIALS SCIENCE↗

Magneto-ionic control of magnetism using a solid-state proton pump

Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O 2– displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H + pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H + insertion at a Co/GdO x interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal–metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin–orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii–Moriya interaction, and spin–orbit torques in ferromagnet/heavy-metal heterostructures. Furthermore, our work provides a platform for voltage-controlled spin–orbitronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Silica-Aerogel-Reinforced Composite Polymer Electrolyte with High Ionic Conductivity and High Modulus

High-energy all-solid-state lithium (Li) batteries have great potential as next-generation energy-storage devices. Among all choices of electrolytes, polymer-based systems have attracted widespread attention due to their low density, low cost, and excellent processability. However, they are generally mechanically too weak to effectively suppress Li dendrites and have lower ionic conductivity for reasonable kinetics at ambient temperature. Here, an ultrastrong reinforced composite polymer electrolyte (CPE) is successfully designed and fabricated by introducing a stiff mesoporous SiO 2 aerogel as the backbone for a polymer-based electrolyte. The interconnected SiO 2 aerogel not only performs as a strong backbone strengthening the whole composite, but also offers large and continuous surfaces for strong anion adsorption, which produces a highly conductive pathway across the composite. As a consequence, a high modulus of ≈0.43 GPa and high ionic conductivity of ≈0.6 mS cm -1 at 30°C are simultaneously achieved. Furthermore, LiFePO 4 –Li full cells with good cyclability and rate capability at ambient temperature are obtained. Full cells with cathode capacity up to 2.1 mAh cm -2 are also demonstrated. The aerogel-reinforced CPE represents a new design principle for solid-state electrolytes and offers opportunities for future all-solid-state Li batteries.

25 ENERGY STORAGE↗

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗

Synthetic and spectroscopic studies of vanadate glaserites I: Upconversion studies of doubly co-doped (Er, Tm, or Ho):Yb:K{sub 3}Y(VO{sub 4}){sub 2}

The synthesis and upconversion properties of trigonal glaserite-type K{sub 3}Y(VO{sub 4}){sub 2} co-doped with Er{sup 3+}/Yb{sup 3+}, Ho{sup 3+}/Yb{sup 3+}, or Tm{sup 3+}/Yb{sup 3+} were studied. Powder samples were synthesized by solid state reactions at 1000 °C for 48 h, while well-formed hexagonal single crystals of the same were grown hydrothermally using 10 M K{sub 2}CO{sub 3} at 560–650 °C. Infrared-to-visible upconversion by Er{sup 3+}/Yb{sup 3+}, Ho{sup 3+}/Yb{sup 3+}, or Tm{sup 3+}/Yb{sup 3+} codoped-K{sub 3}Y(VO{sub 4}){sub 2} glaserite powder and single crystals was observed, and the upconversion spectral properties were studied as a function of different Er{sup 3+}, Tm{sup 3+}, Ho{sup 3+}, and Yb{sup 3+} ion concentrations. The process is observed under 980 nm laser diode excitation and leads to strong green (552 nm) and red (659 nm) emission for Er{sup 3+}/Yb{sup 3+}, green (549 nm) and red (664 nm) emission for Ho{sup 3+}/Yb{sup 3+}, and blue (475 nm) and red (647 nm) emission for Tm{sup 3+}/Yb{sup 3+}. The main mechanism that allows for up-conversion is attributed the energy transfer among Yb{sup 3+} and the various Er{sup 3+}/Ho{sup 3+}/Tm{sup 3+} ions in excited states. These results illustrate the large potential of co-doped alkali double vanadates for photonic applications involving optoelectronics devices. - Graphical abstract: Synthesis and upconversion in vanadate glaserites. - Highlights: • K{sub 3}Y(VO{sub 4}){sub 2} codoped with Er, Tm, or Ho:Yb were synthesized via solid-state and hydrothermal routes. • Upconversion properties are investigated. • The codoped compounds revealed efficient infrared-to-visible upconversion. • The presented compounds are potential host for solid state lighting.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

First-principles Modeling and Design of Solid-State Interfaces for the Protection and Use of Lithium Metal Anodes

Li-ion batteries are one of the most advanced energy storage technologies in use today. Li-ion batteries are used in a multitude of applications ranging from consumer electronics, medical devices, sensors and grid storage. However, improving the capacity and energy density delivered by current Li-ion technology requires advanced materials research into novel chemical systems. In this project we have focused particularly in the use of solid-state electrolytes with lithium metal electrodes. Research into all solid-state batteries (ASSB) with Li metal electrodes has significantly expanded in recent years, however most studies reported experimental findings, which left substantial room for theoretical and modeling work as a tool to understand and determine design principles allowing reliable and safe use of ASSBs with Li metal. Among the remaining obstacles preventing reliable use of ASSBs with a Li metal electrode, the stability of the interface between the solid electrolyte and Li metal, and the propagation/dendrite formation of Li metal and resulting mechanical degradation of the electrolyte are key phenomenon that are yet to be fully understood. In the current project we have addressed these two coupled phenomena using first principles calculations and mesoscale continuum modeling. We have obtained chemical and electrochemical stability windows for several solid electrolyte materials. Additionally, from mathematical and numerical modeling of Li protrusion and dendrite initiation during plating and stripping we have determined design criteria in terms of chemical, electrochemical, and mechanical properties and operating conditions for which stable deposition can occur. We also considered the effects of mixed electronic-ionic conduction in solid electrolytes, which has more recently been suggested as another important mechanism involved in ASSB failure. Throughout our work we have successfully addressed important questions necessary for the use of ASSB’s. We have determined guiding principles for materials properties and operating conditions necessary to operate ASSB’s. And have proposed novel solid electrolyte materials with predicted chemical stability an ionic conductivity. Although this represents significant progress in our understanding, open questions remain in order to fully develop reliable and safely operate ASSBs with Li metal. Future work, building on this project will require further experimental, theoretical and simulation efforts to address remaining questions.

25 ENERGY STORAGE↗

Quantification of the solid-state charge mobility in a model radical polymer

We establish that an oft-used radical polymer, poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) (PTMA), has a solid-state hole mobility value on the order of 10 -4 cm 2 V -1 s -1 in a space charge-limited device geometry. Despite being completely amorphous and lacking any $π$-conjugation, these results demonstrate that the hole mobility of PTMA is comparable to many well-studied conjugated polymers [e.g., poly(3-hexylthiophene)]. Furthermore, we show that the space charge-limited charge carrier mobility of these macromolecules is only a weak function of temperature, in contrast to many thermally-activated models of charge transport in polymeric materials. This key result demonstrates that the charge transport in radical polymers is inherently different than that in semicrystalline, conjugated polymers. These results establish the mechanism of solid-state charge transport in radical polymers and provide macromolecular design principles for this emerging class of organic electronic materials.

36 MATERIALS SCIENCE↗