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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Repeatable electrical measurement instrumentation for use in the accelerated stress testing of thin film solar cells

Attention is given to the construction, calibration, and performance of a repeatable measurement system for use in conjunction with the accelerated stress testing of a-Si:H cells. A filtered diode array is utilized to approximate the spectral response of any type of solar cell in discrete portions of the spectrum. It is noted that in order to achieve the necessary degree of overall repeatability, it is necessary to pay particular attention to methods of contacting and positioning the cells.

Davis, C. W.↗

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗

Front surface passivation of silicon solar cells with antireflection coating

It is demonstrated that the deposition and postdeposition sintering of an antireflection (AR) coating in hydrogen acts to passivate silicon solar cells. Cells with and without an SiO2 passivating layer, coated with a TiO(x)/Al2O3 AR coating, showed comparable enhancements in short-wavelength spectral response and in open-circuit voltage Voc after sintering at 400 C for 5 min in a hydrogen ambient. The improvement in Voc of cells without SiO2 is attributed to front-surface passivation by the AR coating during processing.

Crotty, G.↗

Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

In this paper preliminary results on CuInSe2/ZnSe thin film heterojunction photovoltaic devices are presented. High-conductivity ZnSe films were reactively sutter-deposited onto CuInSe2 films and overcoated with ZnO to reduce the sheet resistance. The highest short-circuit current density, as determined from a spectral response weighted for air mass 1.5 global insolation, was 37.4 mA/sq cm. The highest pen-circuit voltage observed was 430 mV.

Nouhi, A.↗

Scientific charge-coupled devices

The charge-coupled device dominates an ever-increasing variety of scientific imaging and spectroscopy applications. Recent experience indicates, however, that the full potential of CCD performance lies well beyond that realized in devices currently available.Test data suggest that major improvements are feasible in spectral response, charge collection, charge transfer, and readout noise. These properties, their measurement in existing CCDs, and their potential for future improvement are discussed in this paper.

Janesick, James R.↗

Study of solid state photomultiplier

Available solid state photomultiplier (SSPM) detectors were tested under low-background, low temperature conditions to determine the conditions producing optimal sensitivity in a space-based astronomy system such as a liquid cooled helium telescope in orbit. Detector temperatures varied between 6 and 9 K, with background flux ranging from 10 to the 13th power to less than 10 to the 6th power photons/square cm-s. Measured parameters included quantum efficiency, noise, dark current, and spectral response. Experimental data were reduced, analyzed, and combined with existing data to build the SSPM data base included herein. The results were compared to analytical models of SSPM performance where appropriate models existed. Analytical models presented here were developed to be as consistent with the data base as practicable. Significant differences between the theory and data are described. Some models were developed or updated as a result of this study.

Hays, K. M.↗

Infrared radiometric technique in temperature measurement

One class of commercially available imaging infrared radiometers using cooled detectors is sensitive to radiation over the 3 to 12 micron wavelength band. Spectral filters can tailor instrument sensitivity to specific regions where the target exhibits optimum radiance. The broadband spectral response coupled with real time two-dimensional imaging and emittance/background temperature corrections make the instruments useful for remote measurement of surface temperatures from -20 C to +1500 C. Commonly used radiometric techniques and assumptions are discussed, and performance specifications for a typical modern commercial instrument are presented. The potential usefulness of an imaging infrared radiometer in space laboratories is highlighted through examples of research, nondestructive evaluation, safety, and routine maintenance applications. Future improvements in instrument design and application of the radiometric technique are discussed.

Glazer, S.↗

Extrapolation of earth-based solar irradiance measurements to exoatmospheric levels for broad-band and selected absorption-band observations

Techniques for extrapolating earth-based spectral band measurements of directly transmitted solar irradiance to equivalent exoatmospheric signal levels were used to aid in determining system gain settings of the Halogen Occultation Experiment (HALOE) sunsensor being developed for the NASA Upper Atmosphere Research Satellite and for the Stratospheric Aerosol and Gas (SAGE) 2 instrument on the Earth Radiation Budget Satellite. A band transmittance approach was employed for the HALOE sunsensor which has a broad-band channel determined by the spectral responsivity of a silicon detector. A modified Langley plot approach, assuming a square-root law behavior for the water vapor transmittance, was used for the SAGE-2 940 nm water vapor channel.

Reagan, John A.↗

Multijunction upper subcell cascade photovoltaics for space applications

A new class of cascade high-efficiency photovoltaics designed for space-based applications is proposed. The design improves upper subcell performance and avoids electrical and optical losses associated with an intercell ohmic contact. Multijunction upper subcells reduce bulk recombination of photogenerated minority carriers by decreasing the average collection distance, yielding improved spectral response and radiation tolerance. A three-terminal design is employed which circumvents the need for a monolithic intercell contact and, thus, the losses associated with such a contact. Problems related to array interconnection of three-terminal devices may be solved by creating a two-terminal cell from complementary pairs (n-p-n and p-n-p) of three-terminal cells. Simulations of lattice-matched AlGaAs-GaAs and lattice-mismatched AlGaAs-InGaAs cascade cells show that one-sun AM0 efficiencies in excess of 26 and 28 percent, respectively, are possible.

Educato, J. L.↗

Explicit solution of the spectral radiance in integrating spheres with application to the Earth Radiation Budget Experiment ground calibration

An explicit solution of the spectral radiation leaving an arbitrary point on the wall of a spherical cavity with diffuse reflectivity is obtained. A general measurement equation is obtained that describes the output of a sensor measuring the sphere output within a given field of view and with specified angular and spectral responses. The results are applied to the Earth Radiation Budget Experiment (ERBE) integrating sphere. It is shown that by using appropriate interpretation and processing, a high-accuracy shortwave calibration of the ERBE sensors can be achieved.

Halyo, Nesim↗

AlGaAs-InGaAs SHEP's for space applications

The authors propose a novel class of cascade photovoltaics which are intended to overcome two problems with current cascade solar cell designs: poor upper subcell performance and excessive joule losses in the intercell ohmic contact (IOC). The devices feature multijunction upper subcells which improve spectral response by reducing the mean collection distance for photogenerated carriers. They circumvent the need for a monolithic IOC by using npn and pnp three-terminal cells arranged in a complementary configuration. Emphasis is on the AlGaAs-InGaAs system, which allows optimal partitioning of the solar spectrum to attain maximum possible efficiency for a two-gap cascade design. Computer simulations of these cells show that one-sun beginning-of-life efficiencies in excess of 27 percent are possible.

Educato, J. L.↗

Characterization and modelling of open tube diffused n+p bulk InP solar cells

The authors describe the photovoltaic characteristics of an n+p junction solar cell fabricated on bulk InP by an open-tube-diffusion technique. Analysis of the forward characteristics shows that the forward current is dominated by recombination in the quasineutral regions, indicating that the fabrication technique produces a clean junction. Spectral response measurements are analyzed and more realistic boundary conditions are used to model the solar cell to determine important material and device parameters.

Bothra, S.↗

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗

Alternating-Gradient Photodetector For Far Infrared

Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.

Overhauser, Albert W.↗

The basis for the spectral behaviour of silicates in the thermal infrared and applications to remote sensing

Variations in the thermal infrared (TIR) spectral response of silicate rocks is related to changes in the structures and divalent cation contents of the minerals which form the rocks. These considerations lead to a chemical parameter, SCFM, which reflects mineral structures, rock types, and their spectra. The parameter is the ratio of silica to the abundance of depolymerizing cations, defined as SCFM = SiO2/SiO2 + CaO + MgO + FeO. Parameter SCFM is therefore proposed for use in TIR remote sensing of igneous rocks. It is also demonstrated that two or three broad bands are sufficient for distinguishing among major rock types and the system noise has little effect on the quality of the results. These factors can be traded off against improved spatial resolution in instrument design.

Walter, L. S.↗

Optical and electrical measurements on UV sensitive photodiodes

The optical and electrical characteristics of the various types of photodiodes potentially useful for UV radiometers were studied. It was concluded that both GaAsP and GaP photodiodes have advantages over silicon photodiodes in terms of spectral response and UV stability. Both GaAsP and GaP have excellent electrical characteristics for low frequency radiometers, although their high capacitance could be inconvenient for high frequency applications. GaAsP is particularly good with respect to dynamic range.

Lyall, H.↗

AVIRIS data quality for coniferous canopy chemistry

An assessment of AVIRIS data quality for studying coniferous canopy chemistry was made. Seven flightlines of AVIRIS data were acquired over a transect of coniferous forest sites in central Oregon. Both geometric and radiometric properties of the data were examined including: pixel size, swath width, spectral position and signal-to-noise ratio. A flat-field correction was applied to AVIRIS data from a coniferous forest site. Future work with this data set will exclude data from spectrometers C and D due to low signal-to-noise ratios. Data from spectrometers A and B will be used to examine the relationship between the canopy chemical composition of the forest sites and AVIRIS spectral response.

Swanberg, Nancy A.↗

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Landis, Geoffrey A.↗