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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

ACTS Battery and Solar Array Assembly On-Orbit Measured Performance

The Advanced Communications Technology Satellite (ACTS) is a NASA experimental communications satellite system designed to demonstrate on-orbit Ka-band communications and switching technologies that will be used by NASA and the commercial sector in the 21st century. The ACTS was launched on September 12, 1993, and has performed over 10 years of successful experimental operations. The purpose of this report is to describe the ACTS power subsystem and the ACTS solar array and battery assemblies located within the power subsystem and then to document on-orbit measured performance from launch to mission end on April 28, 2004. Solar array and battery performance data is presented, and respective conclusions are drawn. The total solar array power available to the spacecraft was measured each year at the same time, and battery voltage performance was measured twice per year at the same times during peak solar eclipse. At the highest spacecraft power demand, the ACTS uses approximately 1113 W of electrical power during the low-burstrate experiment to operate all six satellite subsystems. After 10 years of on-orbit operation, solar array available output power normal to the Sun measured 1508 W, which represents 395 W of excess margin. The ACTS batteries have successfully supported the ACTS experiment program for over 10 years and operated in excess of 900 charge and discharge cycles through 21 eclipse seasons.

Hilderman, Don R.↗
DOE OSTI2026

A 24-channel ultra-low-noise preamplifier for dN/dx measurements with drift tube detectors

Cluster counting $(dN/dx)$ is a promising method to enhance particle identification for gaseous detectors, especially in next-generation collider experiments like the FCC-ee, where good $π/K$ separation over a broad momentum range is essential. However, its implementation in large-scale systems has been limited by the challenging requirements for high-resolution signal amplification and readout. This paper presents a 24-channel ultra-low-noise preamplifier board designed for drift tube detectors to enable $dN/dx$ measurements. The three-stage amplification topology employs SiGe transistors and integrates dedicated noise-minimization techniques, achieving a charge gain of 21.11 mV/fC from 0.3 fC to 50 fC, a bandwidth of 542 MHz, and a voltage gain of 47.8 dB. The measured voltage noise density is 0.35 nV/$\sqrt{\textrm{Hz}}$ , surpassing most of the state-of-the-art preamplifiers for gaseous and silicon detectors. Validation tests conducted on the sMDT chambers at the CERN Proton Synchrotron test beam facility demonstrate that the proposed design meets the stringent preamplifier requirements for implementing the $dN/dx$ method in drift-tube detector systems, achieving an equivalent noise charge of 0.14 fC and a signal-to-noise ratio of 73 when operated with a He:iC 4 H 10 (90:10) gas mixture. The design also shows promise for broader application in other gaseous or semiconductor detectors.

Drift tube detector↗
NASA NTRS1976

The dc arc characteristics in subsonic orifice nozzle flow

The cold air flow field for a 1/27 cm orifice nozzle was determined for subsonic flow velocities. In addition, d.c. arc voltage, current, and diameter measurements were made for a range of velocities and arc gaps. Average voltage gradients increased rapidly as an arc extinguishing velocity was approached. Measured values of current and diameter were used as an input for relaxation solution of an energy balance equation to compute radial temperature profiles. Calculated arc voltage gradients compare favorably with measured average voltage gradients.

Nagamatsu, H. T.↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Impact of reverse flow induced by a sawtooth anode on the performance of an argon Hall thruster

This study reports the performance comparison of the RAIJIN-66 TAL-type Hall thruster with argon propellant, using two hollow anode designs, one with a simple straight shape and another one with a sawtooth shape. Simulations of the rarefied gas in the sawtooth hollow anode region suggest a successful reversal of the direction of neutral particle flow, with an average increase in the neutral particle density by 15.5% when compared to the straight-shaped hollow anode. This contributes to the improvement in performance across a range of discharge voltages that was measured experimentally. When the thruster is operated with a discharge voltage of 150 V and a flow rate of 70 SCCM, the propellant utilization efficiency with the straight anode is 14%, while with the sawtooth anode it is 25.1%. The anode efficiency reaches in the vicinity of 15% with the sawtooth anode in high voltage conditions, exceeding the efficiencies achieved with the straight anode in the same operating conditions. The optimal magnetic field condition for argon operation and the tuning parameters of the sawtooth anode design for RAIJIN-66 are also discussed.

Satpathy, Dibyesh [Univ. of Tokyo (Japan)] (ORCID:↗
DOE OSTI2022

Health Assessment and Performance Monitoring of Large Machine Diagnostics

Presentation to be given at the CCS-6 Statistical Seminar Series. Regularly maintained and operated diagnostic machines are a backbone of data collection and are a vital component of the Stockpile Stewardship Program’s efforts to better understand nuclear physics. The Cygnus X-ray machine, stationed at the Nevada National Security Site’s U1a underground facility, is one such diagnostic that provides a radiographic capability for the subcritical experiment program. Component failures within Cygnus can result in catastrophic downtime for the diagnostic, affecting performance, schedules, and cost. However, over the years various measurements have been collected on the two Cygnus axes, including voltage and current measurements at different locations, which we believe have predictive power to indicate machine health. We will share preliminary insight into this data and the machine learning approaches we are taking to assess Cygnus’ health, observe declining performance, and predict failures.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1994

Automated System Tests Ferroelectric Capacitors

Polarization-switching parameters measured under computer control. Ferroelectric-capacitor-testing system applies voltage pulses and measures responses of ferroelectric capacitor to determine write; "time dependence of polarization," polarization-retention and fatigue characteristics of capacitor. Highly integrated setup quite flexible, versatile, and interactive, and allows convenient computer storage and analysis of data.

Lakata, Mark↗
NASA NTRS2015

Experimental Investigation of the Near-Wall Region in the NASA HiVHAc EDU2 Hall Thruster

The HiVHAc propulsion system is currently being developed to support Discovery-class NASA science missions. Presently, the thruster meets the required operational lifetime by utilizing a novel discharge channel replacement mechanism. As a risk reduction activity, an alternative approach is being investigated that modifies the existing magnetic circuit to shift the ion acceleration zone further downstream such that the magnetic components are not exposed to direct ion impingement during the thruster's lifetime while maintaining adequate thruster performance and stability. To measure the change in plasma properties between the original magnetic circuit configuration and the modified, "advanced" configuration, six Langmuir probes were flush-mounted within each channel wall near the thruster exit plane. Plasma potential and electron temperature were measured for both configurations across a wide range of discharge voltages and powers. Measurements indicate that the upstream edge of the acceleration zone shifted downstream by as much as 0.104 channel lengths, depending on operating condition. The upstream edge of the acceleration zone also appears to be more insensitive to operating condition in the advanced configuration, remaining between 0.136 and 0.178 channel lengths upstream of the thruster exit plane. Facility effects studies performed on the original configuration indicate that the plasma and acceleration zone recede further upstream into the channel with increasing facility pressure. These results will be used to inform further modifications to the magnetic circuit that will provide maximum protection of the magnetic components without significant changes to thruster performance and stability.

Electric Propulsion↗
NASA NTRS2018

Behavior of Langmuir Probes in Non-Equilibrium Plasmas

Langmuir probes are diagnostic tools used to determine electron temperature, number density, and plasma potential. Irving Langmuir first used an electrostatic probe in the 1920s to find these characteristics in ionized gases. Single, double, and triple Langmuir probes are commonly used in plasma diagnostics because of their relative simplicity. In the single probe, a swept voltage is applied between the probe tip and circuit common to acquire a waveform showing the collected current as a function of applied voltage. A double Langmuir probe consists of two tips, both inserted into the plasma, with a voltage applied between them. As this voltage is swept, a current-voltage characteristic is measured. In a triple probe three probe tips are electrically coupled to each other with constant non-swept voltages applied between each of the tips. The voltages are selected to represent three points on the single Langmuir probe I-V curve. Elimination of the voltage sweep makes it possible to measure time-varying plasma properties in transient plasmas. Triple Langmuir probe measurements have been widely employed for various types of plasmas, including pulsed and time-varying plasmas such as those seen in pulsed plasma thrusters (PPTs), dense plasma focus devices, plasma flows, and fusion experiments. The typical Langmuir probe analysis for determining electron temperature and number density of the plasma (for a single, double, or triple Langmuir probe) includes an assumption that the plasma is in thermal equilibrium. While the this assumption may be justified for some applications, it is unlikely that it is fully justifiable for pulsed and time-varying plasmas or for the entire time a plasma device is in use. In the present work, we model the responses of Langmuir probes as they are inserted into a range of simple equilibrium and non-equilibrium plasmas. We return to basic governing equations of probe current collection and compute the current to the probes for a distribution function consisting of two Maxwellian distributions with different temperatures (the two-temperature Maxwellian). A variation of this method is also employed, where one of the Maxwellians is offset from zero (in velocity space) to add a suprathermal beam of electrons to the tail of the main Maxwellian distribution (the bump-on-the-tail distribution function). For a range of parameters in these non-Maxwellian distributions, we compute the current collection to the probes. Comparing the distribution function that was assumed a priori with the plasma density and temperature one would infer when applying standard probe theory to analyze the collected currents serves to illustrate the effect a non- Maxwellian plasma would have on results interpreted using the equilibrium probe current collection theory, allowing us to state the magnitudes of these deviations as a function of the assumed distribution function properties.

Polzin, Kurt A.↗
DOE OSTI2024

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗
NASA NTRS2011

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗
NASA NTRS1992

Method and apparatus for frequency spectrum analysis

A method for frequency spectrum analysis of an unknown signal in real-time is discussed. The method is based upon integration of 1-bit samples of signal voltage amplitude corresponding to sine or cosine phases of a controlled center frequency clock which is changed after each integration interval to sweep the frequency range of interest in steps. Integration of samples during each interval is carried out over a number of cycles of the center frequency clock spanning a number of cycles of an input signal to be analyzed. The invention may be used to detect the frequency of at least two signals simultaneously. By using a reference signal of known frequency and voltage amplitude (added to the two signals for parallel processing in the same way, but in a different channel with a sampling at the known frequency and phases of the reference signal), the absolute voltage amplitude of the other two signals may be determined by squaring the sine and cosine integrals of each channel and summing the squares to obtain relative power measurements in all three channels and, from the known voltage amplitude of the reference signal, obtaining an absolute voltage measurement for the other two signals by multiplying the known voltage of the reference signal with the ratio of the relative power of each of the other two signals to the relative power of the reference signal.

Cole, Steven W.↗
DOE OSTI2020

Enhanced stability of quantum Hall skyrmions under radio-frequency radiations

We present in this paper the results from a recent study on the stability of the quantum Hall skyrmions state at a Landau level filling factor (ν) close to ν = 1 in a narrow GaAs quantum well. Consistent with previous work, a resonant behavior is observed in the resistively detected NMR measurements. In the subsequent current-voltage (I-V) measurements to examine its breakdown behavior under radio frequency radiations, we observe that the critical current assumes the largest value right at the 75 As nuclear resonant frequency. We discuss possible origin for this unexpectedly enhanced stability.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
DOE OSTI2020

Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Here, we fabricate gallium arsenide-based devices with a wedge-shaped tapering region connected to a rectangular-shaped region and measure the threshold voltage required to trigger the Gunn effect. The threshold voltage reduction is attributed to the focusing of the electric field toward the narrower end of the device and is effective when the device has a steep enough tapering. We also model the electric field profile for the tapered devices using an intuitive graphical approach and the finite element method and provide estimates for the threshold voltages of tapered devices. Finally, we compare the estimates to the measured values and provide possible reasons for the discrepancies. We believe the capability of threshold voltage reduction with the wedge-shaped tapering design could be useful in device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1981

Silicon solar cell process development, fabrication and analysis

The fabrication of solar cells from several unconventional silicon materials is described, and cell performance measured and analyzed. Unconventional materials evaluated are edge defined film fed grown (EFG), heat exchanger method (HEM), dendritic web grown, and continuous CZ silicons. Resistivity, current voltage, and spectral sensitivity of the cells were measured. Current voltage was measured under AM0 and AM1 conditions. Maximum conversion efficiencies of cells fabricated from these and other unconventional silicons were compared and test results analyzed. The HEM and continuous CZ silicon were found to be superior to silicon materials considered previously.

Minahan, J. A.↗
DOE OSTI2023

Sensing and Control During Bulk SPP

In this work, we use the thermoelectricity to directly measure the temperature at different radial positions within instrumented Al1100 billets during friction extrusion. Site-specific and uninterrupted temperature measurements were possible by measuring the local voltages at several thermoelectric junctions consisting of aluminum-nickel pairs during extrusion. Measurements were conducted for a constant die rotation speed of 150 RPM and different extrusion feed rates of 2, 8, 32, and 80 mm.min-1. X-ray computed tomography was used to locate the positions of the thermoelectric junctions inside the processed billet, thus allowing for site-specific microstructural characterization at the precise measurement points. Smooth particle hydrodynamic modeling allowed to determine the thermal, strain, and strain rate fields developing during FE. The applicability and limitations of this temperature measurement approach are discussed as a function of the peak extrusion and torsion stresses relative to the matrix of extrusion feed rates.

42 ENGINEERING↗