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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Operational and Mission Highlights: A Monthly Summary of Top Achievements September 2021

Laboratory personnel working on a years-long Confinement Vessel Disposition (CVD) Project at the Chemistry and Metallurgy Research (CMR) facility recently shipped its first vessel after closing the emptying and dispositioning portion of the project in 2020. During the 1970s and 1980s, the Laboratory conducted experiments that produced data used in computer modeling. Scientists used these models to evaluate the performance of nuclear weapons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
DOE OSTI2024

Materials genome innovation for computational software (magics) center

Functional layered material (LM) architectures will dominate nanomaterials science in this century. We have developed theory, modeling, simulation, and software and data tools that enhance understanding and AI guide synthesis, enable characterization of complex structures, and improve capabilities in the predictive design and growth of LMs. Research at the Center has focused on: Computational synthesis and characterization: AI guided synthesis and experimental synthesis of stacked LMs with tailored properties via optimized chemical vapor deposition (CVD) growth and liquid-phase exfoliation; study defects, edges, grain boundaries, wrinkling of atomic layers and their effects on chemical, mechanical, electrical, and optical properties. Far-from-equilibrium processes: Joint experimental and simulation based probe of electronic processes with NAQMD and ultrafast X-ray free-electron laser (XFEL) and ultrafast electron diffraction (UED) facilities at Stanford. Experimentally validate NAQMD by ultrafast electron diffraction and X-ray spectroscopy studies of structural and excited state dynamics, shape fluctuations, and phonon dynamics. Scalable software: Simulation engines for desktop-to-exascale platforms using low-overhead, linear-scaling QMD algorithms; divide-conquer-recombine NAQMD with electronic excitations; extended-Lagrangian reactive molecular dynamics (RMD), machine learning (ML) based neural-network quantum molecular dynamics (NNQMD), and super-state accelerated molecular dynamics (AMD) and kinetic Monte Carlo codes; thermal and electrical transport software; and design 3D architectures of LMs with desired functionality using scalable software. Distribution of software and data, and training: Software and simulation-experimental data generated within the Center are distributed to the materials science community via Berkeley Materials Project (MP) framework. We have also organized three workshops for software distribution and training at USC (Nov. 2017, Mar. 2018) and Gaithersburg, MD (Nov. 2018) to train researchers, with the last one in focused on underrepresented groups, in collaboration with Howard University which is one of the largest HBCUs. The Center supported a total of 46 personnel and 6 undergraduate students. These include 14 faculty, 11 postdoctoral research associates, 20 graduate research assistants, and mentored 6 undergraduate students. This resulted in the publications of 63 research papers that include 46 publications on Reactive and Quantum Dynamics Simulations, 13 publications on Machine Learning for Quantum Materials, and 4 publications on Quantum Computing.

2D Materials↗
DOE OSTI2025

Extremely Durable Concrete using Methane Decarbonization Nanofiber Co-products with Hydrogen

This project successfully developed a scalable, low-cost co-production process for hydrogen (H₂) and carbon nanofibers (CNFs) using methane through catalytic chemical vapor deposition (CVD). CNFs are high-value materials with exceptional mechanical, electrical, and chemical properties, while hydrogen is a critical clean energy resource. By leveraging vapor deposition to create highly dispersed metal catalysts, this work addressed the dual challenge of producing low-cost hydrogen and enhancing the durability of concrete using co-produced CNFs. Unlike prior approaches, which required separating the carbon product from the catalyst, this innovative method integrated the carbon product, catalyst, and silica support as a crack-bridging additive for Portland cement. This novel application aimed to advance the performance of high-performance concrete (HPC) by improving its flexural toughness, durability, and resistance to environmental degradation.

08 HYDROGEN↗
DOE OSTI2025

In-Situ Laser Diagnostics to Understand Plasma-Surface Interactions in Titanium Thin Film Deposition

During the current project period the following tasks were completed: (1) We demonstrated the feasibility of a new way of measuring CH3 radicals in a plasma environment using a single, femtosecond (fs) pulsed laser for the first time, in a CH4 + Ar flow. A single fs pulsed Ti:Sa laser was split into two beams and with beam conversion using crystals we generatedtwo beams of 275 nm and 205 nm. The 275 nm was used to predissociate the CH3 radicals to CH2+H, followed by 205 nm Two Photon Laser Induced Fluorescence (TALIF) detection of H atoms, with a 11 ns delay from 275 nm predissociation pulse. (2) We demonstrated preliminary CH3 concentration measurements with spatial (< 100 µm) and time resolution (< 10 ns) by image processing of H and Kr TALIF signal images. (3) The methodology to quantify CH3 concentrations was developed. (4) Preliminary measurements of laser dissociation cross sections for CH4 and CH3 to (CH3+H), and (CH2+H), respectively, were conducted. (5) 275 nm laser dissociation of CH4 is a multiphoton process, and the CH4 dissociation cross section is a more sensitive function of the laser pulse energy than CH4 concentration. In the coming months, we will make more precise measurements of the dissociation cross sections, 𝑘275, 𝐶𝐻4 and 𝑘275, 𝐶𝐻3, by varying the laser energy while keeping the flow composition and conditions constant. This will enable more precise quantification of CH3 radical concentrations. More detailed measurements of CH3 radicals will be conducted in the following months of 2025 (Sept-Dec) in a Titanium Isopropoxide (TIP) + H2 + Ar flow meant for pure phase Ti thin film deposition by Chemical Vapor Deposition (CVD). More precise measurements of 275 nm laser dissociation cross sections for CH4 (to CH3 + H) and CH3 (to CH2 + H) will be conducted in the future. Detailed 275 nm laser predissociation cross sections for CH4 and CH3 dissociation to (CH3+H), and (CH2+H), respectively, as a function of gas heating, plasma power, and laser pulse energy will be evaluated. This will enable quantification of CH3 concentrations in the precursor flow over a substrate with time and spatial resolution. Comparison of the concentrations with 2D numerical simulations can lead to understanding of plasma surface interactions during pure metallic Ti thin film deposition using environmentally safer non-halogen TIP precursor. Flow conditions for pure Ti thin film deposition using non-halogen precursor (TIP) will be identified in the following months.

Uddi, Mruthunjaya [Advanced Cooling Technologies, ↗
DOE OSTI2026

Vulnerability Management for Electric Vehicle Supply Equipment

Vulnerability management for EVSE is a challenging undertaking with all the necessary stakeholders and devices that are interconnected, this presentation reviews the challenges and opportunities for conducting CVD for EVSE.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

From Prevention to Disease Perturbations: A Multi-Omic Assessment of Exercise and Myocardial Infarctions

While a molecular assessment of the perturbations and injury arising from diseases is essential in their diagnosis and treatment, understanding changes due to preventative strategies is also imperative. Currently, complex diseases such as cardiovascular disease (CVD), the leading cause of death worldwide, suffer from a limited understanding of how the molecular mechanisms taking place following preventive measures (e.g., exercise) differ from changes occurring due to the injuries caused from the disease (e.g., myocardial infarction (MI)). Therefore, this manuscript assesses lipidomic changes before and one hour after exercise treadmill testing (ETT) and before and one hour after a planned myocardial infarction (PMI) in two separate patient cohorts. Strikingly, unique lipidomic perturbations were observed for these events, as could be expected from their vastly different stresses on the body. The lipidomic results were then combined with previously published metabolomic characterizations of the same patients. This integration provides complementary insights into the exercise and PMI events, thereby giving a more holistic understanding of the molecular changes associated with each.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Carbon Nanotube Formation on Cr-Doped Ferrite Catalyst during Water Gas Shift Membrane Reaction: Mechanistic Implications and Extended Studies on Dry Gas Conversions

A nanocrystalline chromium-doped ferrite (FeCr) catalyst was shown to coproduce H2 and multiwalled carbon nanotubes (MWCNTs) during water gas shift (WGS) reaction in a H2-permselective zeolite membrane reactor (MR) at reaction pressures of ~20 bar. The FeCr catalyst was further demonstrated in the synthesis of highly crystalline and dimensionally uniform MWCNTs from a dry gas mixture of CO and CH4, which were the apparent sources for MWCNT growth in the WGS MR. In both the WGS MR and dry gas reactions, the operating temperature was 500 °C, which is significantly lower than those commonly used in MWCNT production by chemical vapor deposition (CVD) method from CO, CH4, or any other precursor gases. Extensive ex situ characterizations of the reaction products revealed that the FeCr catalyst remained in partially reduced states of Fe3+/Fe2+ and Cr6+/Cr3+ in WGS membrane reaction while further reduction of Fe2+ to Fe0 occurred in the CO/CH4 dry gas environments. The formation of the metallic Fe nanoparticles or catalyst surface dramatically improved the crystallinity and dimensional uniformity of the MWCNTs from dry gas reaction as compared to that from WGS reaction in the MR. Reaction of the CO/CH4 mixture containing 500 ppmv H2S also resulted in high-quality MWCNTs similar to those from the H2S-free feed gas, demonstrating excellent sulfur tolerance of the FeCr catalyst that is practically meaningful for utilization of biogas and cheap coal-derived syngas.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Epitaxial Growth of Ga2O3: A Review

Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of β-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of β-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

Chemistry↗
DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗
NASA NTRS1970

Generation of long time creep data on refractory alloys at elevated temperatures

Creep tests were conducted on two tantalum alloys (ASTAR 811C and T-111 alloy), on a molybdenum alloy (TZM), and on CVD tungsten. The T-111 alloy 1% creep life data have been subjected to Manson's station function analysis, and the progress on this analysis is described. In another test program, the behavior of T-111 alloy with continuously varying temperatures and stresses has been studied. The results indicated that the previously described analysis predicts the observed creep behavior with reasonable accuracy. In addition to the T-111 test program, conventional 1% creep life data have been obtained for ASTAR 811C alloy. Previously observed effects of heat treatment on the creep strength of this material have been discussed and a model involving carbide strengthening primarily at the grain boundaries, rather than in a classical dispersion hardening mechanism, has been proposed to explain the observed results.

Sheffler, K. D.↗
NASA NTRS1971

Fabrication and testing of tungsten heat pipes for heat pipe cooled reactors.

The choice of chemically vapor deposited (CVD) tungsten as material for the heat pipes is based on studies reported by Busse et al. (1970). Aspects of pipe construction are discussed together with wick construction, and heat pipe operation. An auxiliary heater was used to overcome problems during the start of operation in the case of a thermally loaded pipe. Two heat pipes were operated at temperatures up to 1850 K. Annular and channeled wicks were investigated. The design of a cross flow heat exchanger is presented together with the design of a reactor heat pipe life test station.

Bacigalupi, R. J.↗
NASA NTRS1972

High temperature thermocouple development program, part A and part B

The problem of extending the useful life of thermocouples intended for in-core and out-of-core thermionic applications in a vacuum environment at temperatures up to 2273 K for periods of time up to 10,000 hours was investigated. Many factors that may influence this useful life were examined, and a basic probe design was developed. With a few modifications, twenty-three thermocouple assemblies were fabricated. Generally the finished thermocouple consisted of solid doped W-3% Re and W-25% Re wires and high purity and high density BeO insulators, and was sheathed in a high purity tantalum tube. In a few probes, stranded thermocouple wires were substituted; commercial grade BeO was used; and in two cases, CVD W-22% Re tubing was used. Each of the components was made of the highest purity materials available; was subjected to special cleaning steps, and was assembled in a class 10,000 clean room. Pertinent physical and chemical properties were determined on each of the components. Special processing techniques were used in the fabrication of the high purity (99.95%), high density (over 95% of theoretical) BeO.

Toenshoff, D. A.↗
NASA NTRS1973

High temperature superconductor NB3Ga

The discovery of superconductivity at 20.3 K in the Nb-Ga system by applying chemical vapor deposition (CVD) techniques to the materials preparation problem is reported. Films on ceramic substrates have been grown with superconducting onsets of up to 20.3 K. Critical fields at 4.2 K in excess of 300 kG and alpha's of 1100,000 T-A/sq cm have been obtained. The results confirm that the outstanding properties of Nb-Ga are due to an equilibrium configuration of the system, namely, the stoichiometric A-15 compound Nb3Ga, which is stable at relatively low temperatures. Practical materials preparation problems center on the codeposition of an adjacent Nb5Ga3 phase and the requirement that the deposition temperature be low. Some ternary alloys were also prepared, with part of the Ga replaced by Sn, Sb, Al, or Ge.

Vieland, L. J.↗
NASA NTRS1973

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage, V sub oc in BSF cells. Results indicate that the V sub oc effect is not caused simply by the mechanism of blocking of minority carriers.

Mandelkorn, J.↗
NASA NTRS1974

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage in BSF cells.

Mandelkorn, J.↗