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Results for “Photoluminescence Spectroscopy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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453 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Near-Infrared Photoluminescence from Spin-Flip Excited States of π-Conjugated Tris(quinolinolate) Chromium(III) Complexes

Tuning metal–ligand covalency offers promising design strategies to tailor the photoluminescence (PL) emission energies of metal-centered, spin-flip excited states. Herein, we report a series of tris(quinolinolate) chromium(III) complexes that exhibit record-low near-infrared II emission energies in a fluid solution at room temperature, afforded by their strong metal–ligand covalencies. Appending π-conjugated arylethynyl substituents to quinolinolate ligands resulted in minimal changes to metal–ligand bond lengths, facilitating nearly indiscriminate metal–ligand covalencies for each tris(quinolinolate) chromium(III) complex. As a result, near-infrared II emission was observed across the series, while simultaneously affording careful tuning of the 4 LMCT/ 4 ( 1 ILCT) electronic transition energies across the visible region. Here, detailed analyses of ground-state electronic structures and excited-state electronic transitions revealed that PL arises from a ligand-field, 2 E excited state, admixed with charge-transfer character. This assignment was supported by solvent-dependent near-infrared emission energies and long excited-state lifetimes, consistent with spin-forbidden relaxation (ranging from 115 ± 5 to 123 ± 1 ns across the series). Utilizing spectroscopic data, ligand-field parameters were quantified, further rationalizing the role of strong metal–ligand covalency in enabling near-infrared II emission. Supported by these results, this study presents a new class of ligands that enable room-temperature near-infrared II emission in chromium(III)-based spin-flip excited states.

Absorption spectroscopy↗
DOE OSTI2025

Spontaneous Formation of Single-Crystalline Spherulites in a Chiral 2D Hybrid Perovskite

In two-dimensional (2D) chiral metal-halide perovskites (MHPs), chiral organic spacers induce structural chirality and chiroptical properties in the metal-halide sublattice. This structural chirality enables reversible crystalline-glass phase transitions in (S-NEA) 2 PbBr 4 , a prototypical chiral 2D MHP where NEA + represents 1-(1-naphthyl)ethylammonium. Here, in this study, we investigate two distinct spherulite states of (S-NEA) 2 PbBr 4 , exhibiting either radial-like or stripe-like banded patterns depending on the annealing conditions of the amorphous film. Despite similarities in optical absorption and photoluminescence, the stripe-like, banded spherulite exhibits higher crystallinity and improved optical transparency compared to those of radial-like spherulite. X-ray nanoprobe measurements reveal tilting-angle modulations in the octahedral plane of stripe-like spherulites, correlating with the film’s surface geometry. Transfer matrix calculations indicate that the optical contrast in stripe-like patterns, seen in bright-field optical microscopy, arises from optical interference effects, differing from the contrast mechanism observed in polymer spherulites. Ultrafast carrier dynamics experiments suggest that the stripe-like spherulites resemble single crystals more closely than radial-like spherulites, while electrical conductivity measurements show enhanced charge carrier transport in stripe-like spherulites. These findings offer insights into MHP spherulite states with a single composition but different morphologies, previously observed only in polymers, highlighting their potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Defect Engineering in Large‐Scale CVD‐Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, it is demonstrated that formation of negative boron vacancy defects, V B − , in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. Different defect types are identified by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons and emitting at 800 nm) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (N B V N ) and reveal the presence of additional “dark” paramagnetic defects that influence spin-lattice relaxation time (T 1 ) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

CVD↗