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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sensitivity measurements for a 250 MHz quartz shear-horizontal surface acoustic wave biosensor under liquid viscous loading

Surface acoustic wave (SAW) devices have been used in biochemical assays due to their high sensitivity. The device sensitivity is a function of changes in the density and viscosity of the liquid. Here, we studied the effect of fluid viscosity using a 250 MHz quartz shear-horizontal (SH)-SAW biosensor by monitoring different concentrations of binary aqueous/glycerol solutions. In this study, the sensitivity of the biosensor was determined by fitting the data to models derived from perturbation theory. Measurements in water were used as the reference. For a 0% to 50% glycerol solution, an 87°–204° separation in the phase shift was observed. The slope of the plot of the phase shift vs (ηρ)0.5 was used to indicate the sensor’s sensitivity. The sensitivity for our 250 MHz quartz SH-SAW sensors was calculated to be 3.7×10−3m2sKg. The corresponding mass sensitivity was determined to be 9.25 × 105m2Kg. The limit of detection was calculated to be 36 picograms (pg), while the limit of quantification or LOQ was calculated to be 109 pg. Traditionally, liquid phase measurements have been challenging for SAW devices because liquids dampen the vibrating sensors severely. This problem has been largely solved using a transverse (shear) wave instead of the more popular longitudinal or Rayleigh waves. Liquid measurements are now possible using transverse waves, also known as shear waves, because transverse waves are only minimally attenuated by liquids. Shear-horizontal SAW sensors (SH-SAW) show great promise as label-free biosensors because of their ability to handle liquid samples. However, the viscosity of the liquid still induces loading effects and can be measured when the liquid is loaded onto the SH-SAW propagating surface (delay line). When the liquid above the delay line is perturbed by physical or chemical changes, such as binding to a receptor, it alters the propagating acoustic wave. The SH-SAW device can measure these changes in liquid properties as a change in the wave’s phase compared to the original wave. The device’s phase shift was recorded as a function of the changes in the density and viscosity of the binary glycerol solution and used to determine the sensitivity in the linear dynamic range of responses.

Materials Science↗
DOE OSTI2022

Data collection from crystals grown in microfluidic droplets

Protein crystals grown in microfluidic droplets have been shown to be an effective and robust platform for storage, transport and serial crystallography data collection with a minimal impact on diffraction quality. Single macromolecular microcrystals grown in nanolitre-sized droplets allow the very efficient use of protein samples and can produce large quantities of high-quality samples for data collection. However, there are challenges not only in growing crystals in microfluidic droplets, but also in delivering the droplets into X-ray beams, including the physical arrangement, beamline and timing constraints and ease of use. Here, the crystallization of two human gut microbial hydrolases in microfluidic droplets is described: a sample-transport and data-collection approach that is inexpensive, is convenient, requires small amounts of protein and is forgiving. It is shown that crystals can be grown in 50–500 pl droplets when the crystallization conditions are compatible with the droplet environment. Local and remote data-collection methods are described and it is shown that crystals grown in microfluidics droplets and housed as an emulsion in an Eppendorf tube can be shipped from the US to the UK using a FedEx envelope, and data can be collected successfully. Details of how crystals were delivered to the X-ray beam by depositing an emulsion of droplets onto a silicon fixed-target serial device are provided. After three months of storage at 4°C, the crystals endured and diffracted well, showing only a slight decrease in diffracting power, demonstrating a suitable way to grow crystals, and to store and collect the droplets with crystals for data collection. This sample-delivery and data-collection strategy allows crystal droplets to be shipped and set aside until beamtime is available.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power transmission and multi-junction solar cells. It is therefore important to understand their degradation kinetics when submitted to high-temperature and high-intensity stress. We submitted three samples of GaN-InGaN MQW solar cells with p-AlGaN electron-blocking-layer with different thickness of the p-GaN layer to constant power stress at 310 W/cm 2 , 175 °C for several hundred hours. The main degradation modes are a reduction of open-circuit voltage, short-circuit current, external quantum efficiency, power conversion efficiency and electroluminescence. In particular, we observed that a thinner p-GaN layer results in a stronger degradation observed on the cell operating parameters. The analysis of the dark I-V characteristics showed an increase in low-forward bias current and the analysis of electroluminescence showed a decrease in the electroluminescene emitted by the (forward biased) cell, as a consequence of stress. This work highlights that the cause of degradation is possibly related to a diffusion mechanism, which results in an increase of defect density in the active region. Finally, the impurities involved in the diffusion processes possibly originate from the p-side of the devices, therefore a thicker p-GaN layer reduces the amount of defects reaching the active region.

14 SOLAR ENERGY↗
DOE OSTI2021

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. In this work, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large thermal conductivity k. The k of epitaxially grown AlN on foreign substrates has been investigated; however, no thermal studies have been conducted on homoepitaxially grown AlN. In this study, the thickness dependent k and thermal boundary conductance G of homoepitaxial AlN thin films were systematically studied using the optical pump–probe method of frequency-domain thermoreflectance. Our results show that k increases with the thickness and k values are among the highest reported for film thicknesses of 200 nm, 500 nm, and 1 μm, with values of 71.95, 152.04, and 195.71 W/(mK), respectively. Our first-principles calculations show good agreement with our measured data. Remarkably, the G between the epilayer and the substrate reported high values of 328, 477, 1180, and 2590 MW/(m 2 K) for sample thicknesses of 200 nm, 500 nm, 1 μm, and 3 μm, respectively. The high k and ultrahigh G of homoepitaxially grown AlN are very promising for efficient heat dissipation, which helps in device design and has advanced applications in micro-electromechanical systems, ultraviolet photonics, and high-power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photonic curing for innovative fabrication of flexible metal oxide optoelectronics

Abstract Flexible optoelectronics, based on non-planar substrates, hold promise for diverse applications such as wearables, health monitors, and displays due to their cost-effective manufacturing methods. Despite the superior properties of metal oxides, the challenge of processing them at high temperatures incompatible with plastic substrates necessitates innovative annealing approaches. Photonic curing, which delivers microsecond to millisecond broadband (200–1500 nm) light pulses on a sample, emerges as a viable solution. Depending on the optical properties, the targeted film absorbs the radiant energy resulting in rapid heating while the transparent substrate absorbs a minimal amount of light and remains at ambient temperature. The light intensity can be high, but since the light pulse is short, the total energy absorbed by the sample remains low and will not damage the plastic substrate. This perspective explores the innovative application of photonic curing to fabricate flexible metal oxide optoelectronics, including thin-film transistors, metal–insulator–metal devices, solar cells, transparent conductors, and Li batteries, emphasizing the conversion of sol–gel precursors to metal oxides. However, this technique was initially developed for sintering metal nanoparticles to conductive patterns and poses intriguing challenges in explaining its mechanism for metal oxide conversion, especially considering the limited absorption of visible light by most sol–gel precursors. The review delves into UV-induced photochemistry, common flexible metal-oxide optoelectronic components, and non-intuitive distinctions between photonic curing and thermal annealing. By elucidating the distinctive role of photonic curing in overcoming temperature-related challenges and advancing the fabrication of flexible metal oxide optoelectronics, this perspective offers valuable insights that could shape the future of flexible optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Advances in High Resolution Ultrafast Scintillators for Fast timing Applications

Scintillation detectors exhibiting high spatial resolution and fast timing capabilities are of vital importance for synchrotron sources. These detectors may be exposed to a variety of X-ray energies (up to 140 keV) and used in high frame rate applications. Here, we describe the advances in the development of thin-film LuI3:Ce scintillators for higher energy X-ray imaging, with fast timing and high spatial resolution. When grown in a single crystalline form, these scintillators are bright, producing 115 000 photons/MeV. However, to achieve high spatial resolution, these scintillators are grown in thin-film form with a microcolumnar structure, controllable to column diameters of <1-30 mu m. Thus, a much thicker scintillator layer (10 mu m-3 mm or higher) may be grown, providing superior X-ray absorption while achieving high resolutions of 50 mu m or better, at the cost of reduced light yield. To study the timing characteristics of the scintillator, time-resolved X-ray excited optical luminescence (TR-XEOL) was performed on two different sets of three samples of LuI3 at the 1-BM beamline of the Advanced Photon Source at Argonne National Laboratory. Besides, we report timing measurements obtained using a photomultiplier tube (PMT) and oscilloscope at Radiation Monitoring Devices (RMD) Inc. Using the TR-XEOL, we determined the decay constants of LuI3 as a function of Ce doping, recording a fast decay component as low as 3.6 ns (39%), one of the fastest values recorded in inorganic scintillators. This fast decay opens up numerous novel applications, where ultrahigh frame rates are important using synchrotron X-rays. This article will discuss fabrication, characterization, and potential applications for this novel scintillator.

fast timing↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗
DOE OSTI2022

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 μm, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3–33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 10 11 , when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Large Exciton Diffusion Coefficients in Two Dimensional Covalent Organic Frameworks with Different Domain Sizes Revealed by Ultrafast Exciton Dynamics

Large singlet exciton diffusion lengths are a hallmark of high performance in organic-based devices such as photovoltaics, chemical sensors, and photodetectors. In this study, exciton dynamics of a two-dimensional covalent organic framework, 2D COF-S, is investigated using ultrafast spectroscopic techniques. After photoexcitation, the COF-S exciton decays via three pathways: (1) excimer formation (4 +/- 2 ps), (2) excimer relaxation (160 +/- 40 ps), and (3) excimer decay (>3 ns). Excitation fluence-dependent transient absorption studies suggest that COF-5 has a relatively large diffusion coefficient (0.08 cm(2)/s). Furthermore, exciton-exciton annihilation processes are characterized as a function of COF-S crystallite domain size in four different samples, which reveal domain-size-dependent exciton diffusion kinetics. These results reveal that exciton diffusion in COF-S is constrained by its crystalline domain size. These insights indicate the outstanding promise of delocalized excitonic processes available in 2D COFs, which motivate their continued design and implementation into optoelectronic devices.

Flanders, Nathan C.↗
DOE OSTI2025

Near-half-metallic state in the half-Heusler PtMnSb film on a III-V substrate

The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion-symmetry-broken structure of half Heuslers provides an ideal platform for various spintronics functionalities. Taking advantage of good lattice matching, it is highly desired to epitaxially integrate promising Heuslers into III-V semiconductor-based devices. PtMnSb is one of the first half Heuslers predicted to be an above-room-temperature half-metal with large spin orbit coupling, however, its half-metallicity and potential as a spintronics material has remained elusive due to lack of high quality samples. Here, in this study, we demonstrate epitaxial growth of single crystal PtMnSb(001) film on GaSb(001) substrates using molecular beam epitaxy. Direct observation of the band structure via angle-resolved photoemission spectroscopy and many-body perturbation theory within the quasi-particle self-consistent GW approximation (QPGW) reveal that PtMnSb hosts rather a near-half-metallic state with both spin bands crossing the Fermi level and with high spin polarization over 90%. Temperature dependence of magnetization also shows an anomalous enhancement below 60 K, which can be associated with the development of such a near-half-metallic state at low temperatures. Epitaxial growth of high crystalline PtMnSb on a III-V paves the way for systematic clarification of its spin transport properties with fine-tuning of strain in heterostructure devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optical leakage mitigation in ortho-mode transducer detectors for microwave applications

Ortho-mode transducers (OMT) are a commonly used method of coupling opti-cal signals between waveguides and on-chip circuitry and detectors. While the ideal OMT-waveguide coupling requires minimal disturbance to the waveguide, when used for mm-wave applications the waveguide is often slide though and the OMT probes inserted on a thin support membrane. This interface is a potential source of signal leakage and can lead to signal loss and experimental systematics (e.g. in CMB polarization experiments where lost signal can result in temperature to polarization leakage). Here we report on the development of new OMT- waveguide coupling structures with the goal of reducing leakage at the horn-to-detector-wafer interface. The pixel to pixel optical leakage due to the gap be-tween the coupling waveguide and the backshort is reduced by means of a protrusion that passes through the OMT membrane and connects the waveguide sections on each side of the wafer. High frequency electromagnetic simulations indicate that these protrusions can reduce optical leakage in the gap by ~80% percent, with a ~60% filling factor, respect to an ordinary OMT coupling without protrusion, using designs that are compatible with current fabrication processes. We describe the design of the new coupling structure including the impact of varying two key parameters: wafer to optical coupling gap and protrusion fill factor. Prototype devices have been designed that will characterize the performance of the new design using a relative measurement with varying filling factors. We describe the simulation setup and results, and present a chip layout and sample box designed to perform an initial measurement.

Detectors↗
DOE OSTI2026

Experimental quantum Bernoulli factories via Bell-basis measurements

Randomness processing in the Bernoulli factory framework provides a concrete setting in which quantum resources can outperform classical ones. We experimentally demonstrate quantum randomness processing based on Bell-basis measurements of two identical input quoins prepared on IBM superconducting hardware. Using only the measurement outcomes (and no external classical randomness source), we realize the classically inconstructible Bernoulli doubling primitive f(p)=2p, and, as intermediate outputs from the same Bell-measurement statistics, an exact fair coin f(p)=1/2 and the classically inconstructible function f(p)=4p(1−p). We benchmark the measured output biases against ideal predictions and discuss the impact of device noise. Our results establish a simple resource-efficient experimental primitive for quantum-to-classical randomness processing and support the viability of quantum Bernoulli factories for quantum-enhanced stochastic simulation and sampling tasks.

Roy, Tanay [Fermilab] (ORCID:000000019442862X)↗
DOE OSTI2024

ChatGPT and Other Large Language Models for Cybersecurity of Smart Grid Applications

Cybersecurity breaches targeting electrical substations constitute a significant threat to the integrity of the power grid, necessitating comprehensive defense and mitigation strategies. Any anomaly in information and communication technology (ICT) should be detected for secure communications between devices in digital substations. This paper proposes large language models (LLMs), e.g., ChatGPT, for the cybersecurity of IEC 61850-based communications. Multi-cast messages such as generic object oriented system events (GOOSE) and sampled values (SV) are used for case studies. The proposed LLM-based cybersecurity framework includes, for the first time, data pre-processing of communication systems and human-in-the-loop (HITL) training (considering the cybersecurity guidelines recommended by humans). The results show a comparative analysis of detected anomaly data carried out based on the performance evaluation metrics for different LLMs. A hardware-in-the-loop (HIL) testbed is used to generate and extract a dataset of IEC 61850 communications.

ChatGPT↗
DOE OSTI2022

Developments and Challenges in the Design of the ITER DRGA

We report the ITER Diagnostic Residual Gas Analyzer (DRGA) will measure the distribution of gas species, i.e., deuterium (D), tritium (T), and impurities, in the divertor exhaust stream and in the plasma periphery, with time resolution relevant to fusion plasma–wall particle dynamics. The uniqueness of the DRGA, over previous implementations of plasma dynamics residual gas analysis, is an integrated approach, combining mass and low-temperature plasma-activated optical spectroscopy, in a differentially pumped analysis station. A further unique feature of the ITER divertor-specific DRGA is an ~8-m separation of the analysis station from the sampled pumping duct, while still maintaining a ~1-s response time for hydrogen isotopic concentrations. ITER DRGA final design activities are strongly benefiting from testing of prototypical DRGA components and methods on present fusion devices, most currently on JET and W7-X. DRGA systems are implemented on both these devices and include sensors (and pumping methods) that are directly relevant to the ITER DRGA design. The recent JET-DTE2 campaign has provided the first experience on operating the combined ITER DRGA sensors with D-T plasmas. While enhancing system design for ITER, this experience on operating devices has also revealed additional engineering challenges, which further guide the continuing final design project. Meanwhile, the recent determination that the ITER DRGA, with slight optimization, will resolve the helium isotopes well enough to support an ITER pre-DT, He-3-based heating scheme, has greatly increased ITER Research Program interest in the DRGA and its implementation well ahead of the DT phase.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Results from Accelerated Environmental Testing of Barcoded Identifiers for UF 6 Cylinders

This report provides the qualitative and quantitative results from the accelerated environmental testing campaign. A total of 444 samples were subjected to 10 tests that included UV, salt fog, temperature, blowing dust, high pressure and temperature water, and impact exposure. Each sample included a two-dimensional barcode and an alphanumeric string representing the cylinder identification number. When evaluating the results, primary attention was placed on the decodability of the barcodes using a barcode verifier device, since machine scanning a barcode offers the greatest efficiency and accuracy gains when reading cylinder identification numbers during safeguards activities. Contrast was considered the critical test parameter because maintaining contrast under a wide range of environmental conditions is of fundamental importance to decoding the identification number of the barcodes. Additionally, manual readability of the alphanumeric string was considered an important factor in determining whether an inspector or operator could still read the identification number of the cylinder if the barcode proved to be undecodable.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Inchfab – A ultra-low-cost micro and nanofabrication platform (CRADA Final Report)

Inchfab Inc. is developing an ultra-low cost suite of micro- and nanofabrication platforms which allows greater process flexibility and short development cycles. In traditional manufacturing environments, virtually all fabrication happens on 6-12” substrates–which requires prohibitively expensive fabrication facilities (“fabs”). By scaling the substrate size down to 1-2”, Inchfab reduces the capital cost and physical footprint of a fab by two to three orders of magnitude, while still retaining a similar level of performance. Additionally, the design of the Inchfab will allow users to develop fully-customizable fabrication processes, accommodating non-traditional materials and process diversity. Ultimately, the Inchfab platform will enable innovative device designs which currently have limited possibility of being realized. This CRADA project worked on preliminary research to test the feasibility of the Inchfab platform by utilizing equipment at Berkeley Lab to evaluate test samples and characterize equipment performance.

42 ENGINEERING↗