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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This presentation will include information about Graphics Processor Units (GPUs) technology, NASA Electronic Parts and Packaging (NEPP) tasks, The test setup, test parameter considerations, lessons learned, collaborations, a roadmap, NEPP partners, results to date, and future plans.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.
This presentation will cover why modeling is useful for radiation hardness assurance cases, and also provide information on Model-Based Assurance Case+ (MBAC+), NASAs Reliability Maintainability Template, and Fault Propagation Modeling.
Testing of an Intel 14nm desktop processor was conducted under proton irradiation. We share lessons learned, demonstrating that complex devices beget further complex challenges requiring practical and theoretical investigative expertise to solve.
SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
Heavy-ion test data for 3D NAND flash memories is presented, along with a discussion of modern testing challenges and near-term plans for a broad survey of currently-available product lines.
This presentation will include information about Graphics Processing Unit (GPU) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
While some Graphical Processing Units (GPUs) are discrete components (i.e.GTX1050), others take the form of an IP block or embedded engine within a System on Chip (SoC) device such as the Qualcomm Snapdragon"TM" 820 which contains a Qualcomm Adreno"TM" 530 GPU. Within this device are various functional blocks which can be exercised with software payloads. NVidia's Jetson"TM" TX1 SoC is provided on a System on Module (SOM). Within it are Central Processing Unit (CPU) cores and an nVidia GPU which can be accessed similarly to a discrete GPU coprocessor. While the packaging is different, each one of these GPUs needs to be tested using the same standardized code.
This presentation gives an overview pulsed laser testing methods and practical examples for radiation hardness assurance in space system electronics.
This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.
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Low-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.
This paper presents an overview of the Cassini Project's environmental test and analysis program during the spacecraft development phase - October 1989 to launch in October 1997.
This paper summarizes single event upset and latchup data from 1996 to 1998 from numerous sources.