A Brief History of Memory in Space From an SEE Perspective
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Single Event Effects RAM Memory Upsets↗
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Overview of Device SEE Susceptibility From Heavy Ions
This paper presents an evaluation of trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts.
single-event effects (SEE) heavy ion↗
Testing challenges : the next generation
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customer↗
Automating the Modeling of the SEE Cross Section's Angular Dependence
An algorithm that automates the application of the alpha law in any SEE analysis is presented. This automation is essential for the widespread acceptance of the sophisticated cross section angular dependence model.
single-event effect↗
Mitigating Upsets in SRAM Based FPGAs from the Xilinix Virtex 2 Family
This slide presentation reviews the single event upset static testing of the Virtex II field programmable gate arrays (FPGA) that were tested in protons and heavy-ions. The test designs and static and dynamic test results are reviewed.
Single Event Effect (SEE) testing↗
Particle Test Fluence: What's the Right Number?
While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.
Single Event Effects (SEE)↗
Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.
nonvolatile memory↗
Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor - System-on-a-Chip
Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor System-on-a-Chip (SoC) for total dose are presented, along with first-look exploratory results from trials at a medical proton facility. Test method builds upon previous efforts by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
14nm↗
Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor/System-on-a-Chip
Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
microprocessor↗
Schottky Diode Derating for Survivability in a Heavy Ion Environment
The dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.
Schottky diode↗
Proton Particle Test Fluence: What's the Right Number?
While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.
Proton SEE↗
Schottky Diode Derating for Survivability in a Heavy Ion Environment
The dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.
hardness assurance↗
Team Update on North American Proton Facilities for Radiation Testing
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
Single event effects testing↗
Team Update on North American Proton Facilities for Radiation Testing
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
Proton cyclotrons↗
New Developments in Error Detection and Correction Strategies for Critical Applications
The presentation will cover a variety of mitigation strategies that were developed for critical applications. An emphasis is placed on strengths and weaknesses per mitigation technique as it pertains to different FPGA device types.
Field programmable gate array (FPGA)↗
Team Update on North American Proton Facilities for Radiation Testing
In the wake of the closure of the Indiana University Cyclotron Facility (IUCF), this presentation provides an overview of the options for North American proton facilities. This includes those in use by the aerospace community as well as new additions from the cancer therapy regime. In addition, proton single event testing background is provided for understanding the criteria needed for these facilities for electronics testing.
Single event effects testing↗