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All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Thermally Stable Co@C3N4 Single-Atom Catalysts for CO Oxidation: Atomic-Level Insights into Structure and Activity

Single Co atoms supported on C3N4 (Co@C3N4) have demonstrated high activity and selectivity in photocatalysis. However, the investigation of structure–function relationships and reaction mechanisms under photocatalytic conditions is very challenging due to the complex conditions of light absorption, charge transfer, and catalysis. In this study, we employed thermal CO oxidation as a prototypical probe reaction to benchmark the intrinsic catalytic performance and track the active-site evolution of Co@C3N4. Single Co atoms were identified and shown to be the catalytically active sites for CO oxidation based on control experiments and isotope-labeling experiments. The Co sites remained atomically dispersed before, during, and after the reaction with temperatures up to 400 °C, as established by in situ X-ray absorption fine structure (XAFS) combined with density functional theory (DFT), FDMNES simulations, and dynamic-time-warping (DTW)-assisted X-ray absorption near edge structure (XANES) matching. Together with theoretical calculations, the integrated analysis reveals a stable coordination environment under reaction conditions, which correlates with sustained activity, establishing Co@C3N4 single-atom catalysts as thermally stable CO oxidation catalysts. Beyond these findings, the current study provides a workflow for unambiguously assigning active sites in Co@C3N4 for thermal CO oxidation. This workflow will aid the understanding of their behavior in photocatalysis in the future, where light-driven dynamics obscure direct structure–function links. Notably, this study provides fundamental insights for the rational design of robust single-atom catalysts and a foundation for the broader application of Co@C3N4 catalysts in oxidation reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Computational and Experimental Investigation of Chiral and Achiral Two‐Dimensional Organic Lead Bromide Perovskites: Octahedral Distortions and Electronic and Optical Properties

A computational investigation is presented, in conjunction with synthesis and experimental characterization, into the structural, electronic, and optical properties of layered two-dimensional organic lead bromide perovskites. Materials based on the chiral (R/S)-4-fluoro-α-methylbenzylammonium (R/S-FMBA), which have been shown to lead to bright room-temperature circularly polarized luminescence, are contrasted with the similar achiral 4-fluorobenzylammonium (FBA). Using density functional theory (DFT) with van der Waals (vdW) corrections, relaxed structures (compared with X-ray diffraction, XRD) and optical absorption spectra (compared with experiments) are studied, as well as band structure and orbital character of transitions. A Python code is developed and provided to calculate octahedral distortions and compare DFT and XRD results, finding that vdW corrections are important for accuracy and that DFT overestimates octahedral tilt angles. (FMBA) 2 PbBr 4 shows among the largest tilt angle differences (often termed Δ β ) reported, 14°–15°, indicating strong inversion symmetry-breaking, which enables its chiral emission. A large resulting Dresselhaus spin-splitting effect is found. The lowest-energy optical transitions involve the perovskite only and are polarized within the layer. This work furthers understanding of structure-property relations with applications to optoelectronics and spintronics.

UV/vis spectroscopy↗
DOE OSTI2026

Crystallographic registry in epitaxial V3O5 thin films

Crystallographic orientation plays a central role in determining transport properties in correlated oxides with low-hysteresis metal–insulator transitions. Here, V3O5 thin films were grown on Al2O3 (0001) and their crystallographic registry was evaluated using x-ray diffraction and cross-sectional transmission electron microscopy. θ–2θ measurements show a single out-of-plane orientation defined by the (202) reflection. Azimuthal φ-scans of the V3O5 (310) reflection exhibit twelve discrete maxima over 360°, indicating a finite set of in-plane orientations imposed by the substrate symmetry. High-resolution TEM and fast Fourier transform analysis confirm crystallographic coherence at the film–substrate interface. The electrical conductivity exhibits a metal–insulator transition at TMIT ≈ 423 K with no measurable thermal hysteresis and a total change of ~1.6 orders of magnitude between 300 and 480 K. These results establish crystallographic registry in epitaxial V3O5 thin films and provide a structurally well-defined system for future studies of orientation-dependent transport.\r\nT

36 MATERIALS SCIENCE↗
DOE OSTI2026

Epitaxial registry and transport properties in V4O7 thin films

We report the growth of V4O7 thin films deposited simultaneously on amorphous SiO2 and crystalline c-cut Al2O3 substrates. x-ray diffraction shows that films grown on SiO2 are polycrystalline with no preferred orientation, while films grown on Al2O3 exhibit a well-defined out-of-plane orientation and an in-plane registry consistent with epitaxial growth. Transmission electron microscopy confirms the crystallographic relationship between the V4O7 film and the Al2O3 substrate. Atomic force microscopy indicates substantially lower surface roughness for films grown on Al2O3 (~6 nm) compared to those grown on SiO2 (~22 nm), and Raman spectroscopy confirms stabilization of the same V4O7 phase on both substrates. Electrical transport measurements reveal a metal–insulator transition near 244 K for both substrates, with thermal hysteresis not exceeding ~1 K. Although the transition temperature remains essentially unchanged, films grown on Al2O3 exhibit higher conductivity over the entire temperature range, exceeding that of films grown on SiO2 by approximately two orders of magnitude at 100 K and by a factor of five at 300 K. These results indicate that the conductivity differences are consistent with variations in microstructural connectivity associated with crystallographic order.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60 degrees C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 degrees C/70% RH for 200 h; and 85 degrees C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage curve tracing. Final characterizations included: Suns-Voc, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗
DOE OSTI2025

Increased electron, positron, and x-ray production from high intensity laser interactions using micro-wire targets

We report increases in energetic electrons, positrons, and x-rays emitted from high-intensity laser interactions (10 18−20 W/cm 2 ) with structured silicon micro-wires on the surface of a 1 mm gold converter target using a 10 ps laser pulse. A total of four different wire configurations are tested, where the gaps (7–28 μm) between the wires and the thicknesses (3–6 μm) of the wires are varied, while the height remains constant (⁠ ~25 μm). We observe the largest enhancement in electrons, positrons, and x-rays with the sparsest wire configurations. The electron temperature (T e ≈6 MeV) remains consistent across all shots, regardless of whether wires or planar targets are used. This suggests that the observed enhancement is due to increased laser light absorption by the accelerated electrons over a long scale length. Two-dimensional particle-in-cell simulations confirm that absorption is significantly enhanced with the wire target. Additionally, specific simulations examining laser pointing on different parts of the wire structure reveal that, while the final electron spectrum remains largely insensitive, the angular distribution is highly sensitive to these variations.

Bremsstrahlung↗
DOE OSTI2025

Hydrodynamic expansion and near-infrared absorption of x-ray heated aluminum plasmas

We use x-ray pulses from dense argon plasmas at the Z Machine (Sandia National Laboratories) to generate hypersonic aluminum plasmas akin to material ejecta during proposed planetary defense missions, fusion reactor wall excursions, and other high-energy density processes. Near-infrared absorption is used to diagnose the controlled expansion of the plasmas through cylindrical cavities following their generation from x-ray heating of solid aluminum 7075 alloy. The data are compared to multidimensional radiation hydrodynamics simulations utilizing the ALEGRA multiphysics code, accounting for the dynamics of radiation scattering, material phase change, plasma expansion, thermal re-irradiation, and interactions with the cavity and with the infrared beams. To allow for accurate simulation, density functional theory is used to apply the Hagen–Rubens relation for the far-infrared and is adjoined with a detailed configuration accounting model using the Propaceos code, producing opacities spanning 10 −1 –10 4 eV photon energy for aluminum 7075 alloy, and in comparison with pure aluminum. The model is found to agree with experimental data in the higher-fluence regime when the Hagen–Rubens relation is applied. The ejected material, which is observed to travel up to 55 km/s, is comprised of a strongly ionized, non-LTE plasma front at ∼10 eV temperature followed by a weakly ionized LTE gas at higher density. The present findings lend some confidence to the broad-range equation of state and infrared opacity models for weakly ionized aluminum plasmas while demonstrating an approach to their future refinement, with potential application to astrophysical plasmas and other extreme processes.

Adiabatic process↗
DOE OSTI2025

Spontaneous Formation of Single-Crystalline Spherulites in a Chiral 2D Hybrid Perovskite

In two-dimensional (2D) chiral metal-halide perovskites (MHPs), chiral organic spacers induce structural chirality and chiroptical properties in the metal-halide sublattice. This structural chirality enables reversible crystalline-glass phase transitions in (S-NEA) 2 PbBr 4 , a prototypical chiral 2D MHP where NEA + represents 1-(1-naphthyl)ethylammonium. Here, in this study, we investigate two distinct spherulite states of (S-NEA) 2 PbBr 4 , exhibiting either radial-like or stripe-like banded patterns depending on the annealing conditions of the amorphous film. Despite similarities in optical absorption and photoluminescence, the stripe-like, banded spherulite exhibits higher crystallinity and improved optical transparency compared to those of radial-like spherulite. X-ray nanoprobe measurements reveal tilting-angle modulations in the octahedral plane of stripe-like spherulites, correlating with the film’s surface geometry. Transfer matrix calculations indicate that the optical contrast in stripe-like patterns, seen in bright-field optical microscopy, arises from optical interference effects, differing from the contrast mechanism observed in polymer spherulites. Ultrafast carrier dynamics experiments suggest that the stripe-like spherulites resemble single crystals more closely than radial-like spherulites, while electrical conductivity measurements show enhanced charge carrier transport in stripe-like spherulites. These findings offer insights into MHP spherulite states with a single composition but different morphologies, previously observed only in polymers, highlighting their potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗
DOE OSTI2025

EP 250108a/SN 2025kg: Observations of the Most Nearby Broad-line Type Ic Supernova Following an Einstein Probe Fast X-Ray Transient

With a small sample of fast X-ray transients (FXTs) with multiwavelength counterparts discovered to date, their progenitors and connections to γ-ray bursts (GRBs) and supernovae (SNe) remain ambiguous. Here, we present photometric and spectroscopic observations of SN 2025kg, the SN counterpart to the FXT EP 250108a. At z = 0.17641, this is the closest known SN discovered following an Einstein Probe (EP) FXT. We show that SN 2025kg’s optical spectra reveal the hallmark features of a broad-lined Type Ic SN. Its light-curve evolution and expansion velocities are comparable to those of GRB-SNe, including SN 1998bw, and two past FXT-SNe. We present JWST/NIRSpec spectroscopy taken around SN 2025kg’s maximum light, and find weak absorption due to He I 1.0830 μm and 2.0581 μm and a broad, unidentified emission feature at ∼4–4.5 μm. Further, we observe broadened Hα in optical data at 42.5 days that is not detected at other epochs, indicating interaction with H-rich material. From its light curve, we derive a 56 Ni mass of 0.2–0.6 M ⊙ . Together with our companion Letter, our broadband data are consistent with a trapped or low-energy (≲10 51 erg) jet-driven explosion from a collapsar with a zero-age main-sequence mass of 15–30 M ⊙ . Finally, we show that the sample of EP FXT-SNe supports past estimates that low-luminosity jets seen through FXTs are more common than successful (GRB) jets, and that similar FXT-like signatures are likely present in at least a few percent of the brightest Type Ic-BL SNe.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1976

Stellar crystal X-ray spectroscopy on OSO-8

The large-area graphite crystal X-ray spectrometer on the OSO-8 satellite is described, and its response to stellar line and continuum radiation is discussed. A high resolution X-ray spectrum of Sco X-1 obtained from a preliminary analysis of quick look data shows a strong, smooth continuum with an absence of emission or absorption features over the energy range 2.2 to 8 keV. Upper limits are set on narrow line emission from highly ionized states of S, Ca, and Fe.

Kestenbaum, H. L.↗
NASA NTRS1978

The case for a burst from 3U 0614+09

A single flare event with a rise time of about 7 s and a decay time of approximately 40 s was observed by the Goddard cosmic X-ray spectroscopy experiment on OSO-8 during observations of 3U 0614+09 in September 1975. The possibility is discussed that the source was 3U 0614+09, which has been compared with the low-mass binary Sco X-1. The spectra during the event could be fitted with blackbody (kT = 0.8-1.1 keV) or thermal bremsstrahlung (kT = 1.1-2.5 keV) models with absorption by cool material. In the blackbody model the source was of the order of 1 million cm in size.

Swank, J. H.↗
NASA NTRS1982

Einstein Observatory pulse-phase spectroscopy of Hercules X-1

Spectra of the Her X-1 pulsations from 0.15 to 4.5 keV have been obtained with the Objective-Grating and Solid State Spectrometers on the HEAO 2 Einstein Observatory. The spectra show no distinct atomic emission or absorption features, except for broad emission near 1 keV possibly due to unresolved Fe L shell emission lines. Spectrally resolved pulse waveforms show a dramatic 240 deg phase shift for E less than 0.85 keV. The soft X-rays are interpreted as the result of the reprocessing of the hard X-ray beam by the inner disk at the magnetospheric boundary of the neutron star, and several spectroscopic and phase observations are suggested which could provide further knowledge of these structures.

Mccray, R. A.↗
NASA NTRS1985

Analysis of TQCM surface contamination adsorbed during the Spacelab I Mission

The Temperature-Controlled Quartz Crystal Microbalance (TQCM) system was flown on the Spacelab I Mission as part of the Induced Environment Contamination Monitor to monitor surface contamination (SC) in the payload bay. SC on the five sensors of the TQCM was analyzed by means of IR spectroscopy, scanning electron spectroscopy, and energy dispersive X-ray fluorescence. The amount of SC ranged from 1.4 micrograms/sq cm for the -Z sensor to 39.9 micrograms/sq cm for the +X sensor. The IR analysis showed strong CH2, CH3, and carbonyl absorption bands, indicative of ester and polyester compounds found in adhesives, plasticizers, and tape. The particulates (mostly ranging from 1 micron to 20 microns in size) were mainly composed of Mg, Al, Al2O3, and Si, and probably originated in the solid rocket firings.

Mckeown, D.↗
NASA NTRS1987

Optical and UV spectroscopy of the black hole binary candidate LMC X-1

Both further optical spectroscopy of the binary star identified with LMC X-1, obtained between 1983 and 1985, and a series of IUE UV spectra taken during a 5 day interval in 1984 are presented. The optical data are used to refine the orbital period to 4.2288 days, and improved orbital parameters are derived. The velocity of the optical emission lines is antiphased with the absorption lines and has twice the velocity amplitude. These new results support the estimates of the masses in the system given earlier. The most probable component masses are approximately 20 solar masses for the primary and near 6 solar masses (for the x-ray star), suggesting the the latter may be a black hole. The UV spectra show very weak, low-velocity stellar-wind lines. It is suggested that much of the surrounding medium is highly ionized by the X-ray flux. The 'nonwind' UV spectral lines and the UV continuum temperature are consistent with the optical data, indicating a late O type star of M(bol) = -8.5. There is a weak modulation of absorption-line strengths with orbital phase, suggestive of a lack of axisymmetry in the X-irradiation of the primary star and indicative of a fairly low orbital inclination.

Hutchings, J. B.↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗