Search NASA⌕ Search

SEARCH · Search NASA

Results for “doping effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
NASA NTRS2007

Thermal Properties of Oxides With Magnetoplumbite Structure for Advanced Thermal Barrier Coatings

Oxides having magnetoplumbite structure are promising candidate materials for applications as high temperature thermal barrier coatings because of their high thermal stability, high thermal expansion, and low thermal conductivity. In this study, powders of LaMgAl11O19, GdMgAl11O19, SmMgAl11O19, and Gd0.7Yb0.3MgAl11O19 magnetoplumbite oxides were synthesized by citric acid sol-gel method and hot pressed into disk specimens. The thermal expansion coefficients (CTE) of these oxide materials were measured from room temperature to 1500 C. The average CTE value was found to be approx.9.6x10(exp -6)/C. Thermal conductivity of these magnetoplumbite-based oxide materials was also evaluated using steady-state laser heat flux test method. The effects of doping on thermal properties were also examined. Thermal conductivity of the doped Gd0.7Yb0.3MgAl11O19 composition was found to be lower than that of the undoped GdMgAl11O19. In contrast, thermal expansion coefficient was found to be independent of the oxide composition and appears to be controlled by the magnetoplumbite crystal structure. Thermal conductivity testing of LaMgAl11O19 and LaMnAl11O19 magnetoplumbite oxide coatings plasma sprayed on NiCrAlY/Rene N5 superalloy substrates indicated resistance of these coatings to sintering even at temperatures as high as 1600 C.

Bansal, Narottam P.↗
NASA NTRS1993

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗
DOE OSTI2022

Computational Study of Variable Fuel-Air Ratio and Hydrogen Doping in a Rotating Detonation Engine

Rotating detonation engines (RDEs) hold great promise as a technology for powering aviation engines. The pressure gain that results from continuously traversing detonation waves enables high theoretical performance compared to deflagration-based combustion. However, the harsh operating conditions inside an RDE restrict the availability of suitable experimental diagnostics to study these systems in detail and the range of spatial and temporal scales render numerical simulations of these systems difficult. In this study, we have combined adaptive mesh refinement and a robust shock-capturing approach to study RDE systems computationally using the compressible, reactive solver PeleC. Multi-species transport along with compressible Navier-Stokes equations are solved in the model along with finite-rate chemistry. Complex geometries are represented using an embedded boundary method with second-order spatial accuracy and the system is evolved in time using a second-order Runge-Kutta method. We present studies of a methane-air RDE system that is doped with varying levels of hydrogen. Our analysis focusses on how fuel mixture and doping levels effect the detonation flame structure and the generation of multiple wave modes.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Thermoelectric Behavior of Structurally Disordered Lanthanide and Actinide Silicides

Lanthanide and actinide intermetallic materials exhibit intriguing electronic, structural, and magnetic properties arising from their partially filled f orbitals. Strong f-electron correlations can significantly modify the electronic density of states, carrier scattering, and transport behavior, making these systems promising candidates for unconventional thermoelectric materials. In previous studies, single crystals of A1.33T4Al8Si2 (A = Ce, Th, U, Np; T = Co, Ni) were synthesized. This structure consists of ordered TAl2 corrugated double layers separated by disordered An–Si monolayers. The inherent disorder within the An–Si layers has been linked to unusual magnetic behavior, such as spin-glass phenomena, and is expected to strongly influence phonon scattering and charge-carrier transport relevant to thermoelectric performance. However, the thermoelectric properties of this material family have not previously been explored. In this work, DFT calculations were performed to evaluate the electronic density of states, band structures, and thermoelectric properties, including the effects of doping. To validate these predictions, Ce1.33Co4Al8Si2 single crystals were grown and experimentally characterized. Additionally, a new Yb1.33Co4Al8Si2 phase was synthesized and characterized using single-crystal XRD, SEM-EDS, magnetization measurements, and thermoelectric measurements. These results provide insight into structure–property relationships governing thermoelectric behavior in f-electron intermetallics and offer guidance for future thermoelectric materials.

37 - INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL C↗
DOE OSTI2018

Tunable Optical Behaviour and Room Temperature Ferromagnetism of Cobalt-Doped BaSnO{sub 3} Nanostructures

In this work, the effect of Co doping on the structural, vibrational, morphological, optical and magnetic behaviour of BaSnO{sub 3} nanostructures is reported. Pure and Co (1,3, and 5%)-doped barium stannate (BSO) nanostructures were prepared by conventional hydrothermal technique followed by calcination at 900 °C for 5 h. The single crystalline cubic phase was identified by XRD analysis and structural distortions associated with Co doping were evidenced by variation in microstarin and crystallite size. FTIR and Raman studies further confirm the structural quality of the prepared samples. FESEM analysis revealed the mixed morphology of prepared samples, and the chemical compositions of all the samples were analysed using EDAX studies. The absorption studies revealed the incorporation of dopant ions and their effect on the bandgap subsequently in samples. The presence of defects and paramagnetic centres in the samples were confirmed by PL and EPR analyses. Magnetization studies demonstrated that pure BSO exhibits characteristic diamagnetism at room temperature and the addition of Co into Ba–Sn–O lattice drives the F-centre exchange interactions which results in the ferromagnetic behaviour. Hence, the occurrence of diamagnetic to ferromagnetic transition at room temperature with addition of Co as a dopant was identified.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Blocking and Superconducting Layer Doping on the Superconductivity and Magnetic Properties of Polycrystalline Sr{sub 2}CaCu{sub 2}O{sub 6}

The possible difference in the properties upon doping the Sr{sub 2}CaCu{sub 2}O{sub 6} superconducting or blocking layers with Fe and Eu respectively was investigated in this work. The homogeneous Sr{sub 2−y}Eu{sub y}CaCu{sub 2}O{sub 6+δ} and Sr{sub 2}CaCu{sub 2−x}Fe{sub x}O{sub 6+δ} (y = 0, 0.1, 0.5, x = 0, 0.05) compounds were produced by a high-pressure synthesis route. Judging by the magnetic susceptibility measurements, all samples exhibit a superconductivity transition and the Eu/Fe concentration dependencies on the diamagnetic moment and average T{sub c} have been constructed using the experimental data. As a result, an unusual behavior of the T{sub c} value was observed for the samples with doped Eu: a fivefold reduction in the europium concentration in the sample does not give a noticeable effect on the transition temperature value while the diamagnetic signal becomes more stronger. Complex superconducting dome was found for Eu-doped material: 0.1 ≤ y ≤ 0.5 region T{sub c} vs. concentration data were approximated by inverted parabola-like curve with a maximum at y = 0.3. Difference in properties of the Eu and Fe-doped samples was also found in the behavior of the hysteresis loops showed the opposite orientations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Impurity induced confinement effects in size-separated Mn-doped CsPbCl 3 nanocrystals

Beyond quantum confinement, impurity doping of semiconductor nanocrystals (NCs) offers a degree of control over their optical and electronic properties, which are of interest for potential applications. Manganese (Mn)-doped CsPbCl 3 NCs, for example, show synergistic effects in the visible, with large enhancements in both blue (exciton) and red (dopant) emission over a narrow range of dopant concentration. Although Mn concentration is the primary parameter, NC size offers an additional degree of control over the number of dopants per NC. Size-resolved CsPbCl 3 NCs prepared in the limit of strong Mn doping highlight the emergence of defective NCs with deviations from anticipated confinement trends. In conclusion, the transition correlates with a redshift and increase in the amplitude of dopant emission, and we discuss these observations in the context of atomistic simulations of Ruddlesden-Popper defects in CsPbCl 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Space charge trap-assisted recombination suppressing layer for low-voltage diode operation

Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.

Santhanam, Parthiban↗
DOE OSTI2018

Magnetic and photocatalytic properties of bismuth doped KNbO3 microrods

Highlights: • K{sub 1-x}Bi{sub x}NbO{sub 3} microrods were prepared by solid state reaction method. • Structural information confirms orthorhombic structure of K{sub 1-x}Bi{sub x}NbO{sub 3}. • Band gap of KNbO{sub 3} was varied between 3.13 and 2.95 eV by Bi doping. • Magnetic property of KNbO{sub 3} microrods effectively modified by Bi doping. • Bi doping considerably enhances the degradation of methyl orange dye. - Abstract: The effect of bismuth doping on the structural, magnetic and photocatalytic properties of K{sub 1-x}Bi{sub x}NbO{sub 3} (x = 0.0, 0.01, 0.03, 0.05 and 0.07 mol.%) microrods were studied. X-ray diffraction, Fourier transform infrared and Raman studies revealed the orthorhombic system of KNbO{sub 3}. The scanning electron microscopy images display the nearly rod shape crystallites of K{sub 1-x}Bi{sub x}NbO{sub 3.} The UV–vis diffuse reflectance spectral result showed that the band gap varying between 3.13 and 2.95 eV. Photoluminescence spectra showed that the emission peaks in the visible region between 459 and 544 nm, which are mainly attributed to the oxygen vacancy present in the K{sub 1-x}Bi{sub x}NbO{sub 3} sample. Vibrating sample magnetometer analysis revealed diamagnetic behavior of Bi doped KNbO{sub 3} samples. The BET surface area of K{sub 1-x}Bi{sub x}NbO{sub 3} microrods varies between 9.54 and 14.48 m{sup 2}g{sup −1}. The rate constant of methyl orange degradation with Bi doped samples is about 2 (x = 0.05) and 2.25 (x = 0.07) times faster when compared with that of undoped KNbO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Enhancing Chemical Interaction of Polysulfide and Carbon through Synergetic Nitrogen and Phosphorus Doping

The shuttling effect of the polysulfide (PS) is the most detrimental factor that causes capacity fading of Li–S batteries. By substituting carbon atoms with heteroatoms, the host materials can provide a chemical interaction with PS to trap it within the electrochemically active range of the cathode. In this study, first-principles-based calculations identify the most stable nitrogen (N) and phosphorus (P) codoped atomic structures and their corresponding adsorption energy toward different PS species. Based on the simulated predictions, we introduce a glucosamine-derived carbon nanotube aerogel (CNA) with a secondary dopant of P during the synergetic polymerization and carbonization process. The N–P codoped CNA and S composite (NPCNA-S) renders a highly stable performance even at a sulfur loading of 3.5 mg cm –2 . In conclusion, the specific capacity is >900 mAh g –1 and the stabilized capacity retention is >70% over 450 cycles at 0.2 C rate (1 C = 1675 mA g –1 ).

25 ENERGY STORAGE↗
DOE OSTI2019

Combined Theoretical and Experimental Investigations of Atomic Doping To Enhance Photon Absorption and Carrier Transport of LaFeO 3 Photocathodes

Perovskite-type lanthanum iron oxide, LaFeO 3 , is a p-type semiconductor that can achieve overall water splitting using visible light while maintaining photostability. These features make LaFeO 3 a promising photocathode candidate for various photoelectrochemical cells. Currently, the photoelectrochemical performance of a LaFeO 3 photocathode is mainly limited by considerable bulk electron-hole recombination. This study reports a combined theoretical and experimental investigation on atomic doping of LaFeO 3 , in particular, substitutional doping of La 3+ with K + , to increase its charge transport properties and decrease electron-hole recombination. The computational results show that K doping enhances not only the charge transport properties but also photon absorption below the bandgap energy of the pristine LaFeO 3 . The effect of K doping was systematically investigated by comparing the electronic and atomic structures, majority carrier density, hole-polaron formation, and optical properties of pristine and K-doped LaFeO 3 . The computational results were then verified by experimentally characterizing the crystal structures, compositions, optical properties, and photoelectrochemical properties of LaFeO 3 and K-doped LaFeO 3 electrodes. For this purpose, pristine LaFeO 3 and K-doped LaFeO 3 were prepared as high-surface-area, high-purity photoelectrodes having the same morphology to accurately and unambiguously evaluate the effect of K doping. Here, the combined computational and experimental investigations presented in this study provide useful insights into the effect of composition tuning of LaFeO 3 and other p-type oxides with a perovskite structure.

14 SOLAR ENERGY↗
DOE OSTI2019

In situ and operando investigation of the dynamic morphological and phase changes of a selenium-doped germanium electrode during (de)lithiation processes

To understand the effect of selenium doping on the good cycling performance and rate capability of a Ge 0.9 Se 0.1 electrode, the dynamic morphological and phase changes of the Ge 0.9 Se 0.1 electrode were investigated by synchrotron-based operando transmission X-ray microscopy (TXM) imaging, X-ray diffraction (XRD), and X-ray absorption spectroscopy (XAS). The TXM results show that the Ge 0.9 Se 0.1 particle retains its original shape after a large volume change induced by (de)lithiation and undergoes a more sudden morphological and optical density change than pure Ge. The difference between Ge 0.9 Se 0.1 and Ge is attributed to a super-ionically conductive Li–Se–Ge network formed inside Ge 0.9 Se 0.1 particles, which contributes to fast Li-ion pathways into the particle and nano-structuring of Ge as well as buffering the volume change of Ge. The XRD and XAS results confirm the formation of a Li–Se–Ge network and reveal that the Li–Se–Ge phase forms during the early stages of lithiation and is an inactive phase. The Li–Se–Ge network also can suppress the formation of the crystalline Li 15 Ge 4 phase. Finally, these in situ and operando results reveal the effect of the in situ formed, super-ionically conductive, and inactive network on the cycling performance of Li-ion batteries and shed light on the design of high capacity electrode materials.

25 ENERGY STORAGE↗
DOE OSTI2022

Heteroatom-Doped Graphenes as Actively Interacting 2D Encapsulation Media for Mg-Based Hydrogen Storage

Nanoencapsulation using graphene derivatives enables the facile fabrication of two-dimensional (2D) nanocomposites with unique microstructures and has been generally applied to many fields of energy materials. Particularly, metal hydrides such as MgH 2 encapsulated by graphene derivatives have emerged as a promising hybrid material for overcoming the disadvantageous properties of Mg-based hydrogen storage. Although the behavior of the graphene–Mg nanoencapsulation interface has been studied for many composite materials, the direct modification of graphene with nonmetal foreign elements for changing the interfacial behavior has been limitedly reported. In this regard, using B-doped graphene and N-doped graphene as nanoencapsulation media for tuning the interfacial behavior of graphene derivative–Mg nanoparticles, we present altered hydrogen storage kinetics of heteroatom-doped (B and N) graphene–Mg composites. The effect of heteroatom doping is studied in terms of bonding configurations and heteroatom doping concentrations. The enhancement in hydrogen uptake was observed for all of the heteroatom-doped graphene–Mg nanocomposites. On the other hand, a few samples exhibit significantly low activation energy at the early stage of desorption, which can be related to the facilitated nucleus formation. Density functional theory calculation indicates that B-doping and N-doping accelerate hydrogen absorption kinetics in different ways, aiding charge transfer and inducing surface deformation of Mg nanoparticles, respectively. Their effects can be augmented in the presence of structural defects on graphene, such as vacancies, pores, or graphene edges. These results demonstrate that hydrogen storage kinetics of Mg-based systems can be altered by utilizing heteroatom-doped graphene oxide derivatives as 2D nanoencapsulation media, suggesting that the addition of a nonmetal doping element can also be applied to Mg-based hydrogen storage by modifying the nanoencapsulation interface without forming Mg alloy phases.

08 HYDROGEN↗
DOE OSTI2020

Magnetic and superconducting anisotropy in Ni-doped RbEuFe 4 As 4 single crystals

We investigate the effect of Ni doping on the Fe site in single crystals of the magnetic superconductor RbEuFe 4 As 4 for doping concentrations of up to 4%. A clear suppression in the superconducting transition temperature is observed in specific-heat, resistivity, and magnetization measurements. Upon Ni doping, the resistivity curves shift up in a parallel fashion, indicating a strong increase of the residual resistivity due to scattering by charged dopant atoms while the shape of the curve and thus the electronic structure appear largely unchanged. The observed step Delta C/T c at the superconducting transition decreases strongly for increasing Ni doping in agreement with expectations based on a model of multiband superconductivity and strong interband pairing. The upper critical field slopes are reduced upon Ni doping for in-plane as well as out-of-plane fields, leading to a small reduction in the superconducting anisotropy. The specific-heat measurements of the magnetic transition reveal the same Berezinskii-Kosterlitz-Thouless behavior close to the transition temperature T m for all doping levels. The transition temperature is essentially unchanged upon doping. The in-plane to out-of-plane anisotropy of Eu magnetism observed at small magnetic fields is unaltered as compared to the undoped compound. In conclusion, all of these observations indicate a decoupling of the Eu magnetism from superconductivity and essentially no influence of Ni doping on the Eu magnetism in this compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗