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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 469 records · Page 26
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

A transient site balance model for atomic layer etching

We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl 2 ) and argon ions (Ar + ). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region ('top layer') and a perfectly mixed subsurface region ('mixed layer'). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl 2 or Ar + fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper, provides further evidence of the accuracy of the model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Droplet bioprinting of acellular and cell-laden structures at high-resolutions

Advances in digital light projection(DLP) based (bio) printers have made printing of intricate structures at high resolution possible using a wide range of photosensitive bioinks. A typical setup of a DLP bioprinter includes a vat or reservoir filled with liquid bioink, which presents challenges in terms of cost associated with bioink synthesis, high waste, and gravity-induced cell settling, contaminations, or variation in bioink viscosity during the printing process. Here, we report a vat-free, low-volume, waste-free droplet bioprinting method capable of rapidly printing 3D soft structures at high resolution using model bioinks and model cells. A multiphase many-body dissipative particle dynamics model was developed to simulate the dynamic process of droplet-based DLP printing and elucidate the roles of surface wettability and bioink viscosity. Process variables such as light intensity, photo-initiator concentration, and bioink formulations were optimized to print 3D soft structures (∼0.4–3 kPa) with a typical layer thickness of 50 µm, an XY resolution of 38 ± 1.5 μm and Z resolution of 237 ± 5.4 µm. To demonstrate its versatility, droplet bioprinting was used to print a range of acellular 3D structures such as a lattice cube, a Mayan pyramid, a heart-shaped structure, and a microfluidic chip with endothelialized channels. Droplet bioprinting, performed using model C3H/10T1/2 cells, exhibited high viability (90%) and cell spreading. Additionally, microfluidic devices with internal channel networks lined with endothelial cells showed robust monolayer formation while osteoblast-laden constructs showed mineral deposition upon osteogenic induction. Overall, droplet bioprinting could be a low-cost, no-waste, easy-to-use, method to make customized bioprinted constructs for a range of biomedical applications.

DLP↗
DOE OSTI2024

Effect of niobium doping on excitonic dynamics in MoSe 2

Abstract Transition metal dichalcogenides (TMDs) have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe 2 as a case study, we experimentally investigate the effect of doping on excitonic dynamics in TMDs. Transient absorption measurements are used to directly compare the dynamical properties of excitons in Nb-doped MoSe 2 across monolayer, bilayer, and bulk flakes with their undoped counterparts. The exciton lifetimes in Nb-doped flakes are significantly shorter than those in their undoped counterparts. This effect is attributed to the trapping of excitons in defect states introduced by Nb impurities. These results reveal an important consequence of Nb doping on excitonic dynamics in TMDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Giant resistance switch in twisted transition metal dichalcogenide tunnel junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here, in this work, we predict an extremely large resistance switching based on the relative spin–orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance larger than 10 6 % when the relative alignment of TMDs goes from 0° to 60° and when the angle is kept fixed at 60° and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large (10 4 %) for typical values of vacancy concentration. Not only should this resistance switching be observed at room temperature due to the large spin splitting, but our results also show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Photocarrier dynamics at the interface between WS 2 and ozone-irradiated graphene

We investigate the photocarrier properties of heterostructures (HSs) formed by WS 2 and ozone-irradiated graphene (OI-graphene), with a focus on the impact of ozone irradiation. Photoluminescence and Raman spectroscopy reveal a pronounced doping effect induced by ozone irradiation on the graphene layer. Transient absorption measurements demonstrate a substantial suppression of charge transfer efficiency across the interface in the presence of ozone molecules. Spatially resolved pump-probe measurements further show a significant reduction in the diffusion coefficient of photocarriers in WS 2 on OI-graphene compared to that of individual WS 2 monolayers. The slower diffusion suggests enhanced spatial separation of electrons and holes in the WS 2 layer, induced by a built-in electric field at the interface. This effect arises from the combined influences of doping and dielectric property changes caused by ozone molecules. These findings highlight the critical influence of ozone irradiation on graphene and HS interfaces, offering valuable insights for the design of future graphene-based two-dimensional HSs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

The proximity effect and critical field behavior of Re/Al bilayers

Abstract We report the perpendicular critical field H c 2 properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a d Re = 3 nm bottom layer of Re and an upper Al layer with thickness varying between d Al = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature T c increases with increasing Al thickness, although their monolayer counterparts have T c Re > T c Al . Furthermore, H c 2 of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses H c 2 drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.

Womack, F. N. (ORCID:0009000810391507)↗
DOE OSTI2024

Atomic Electron Tomography of Thin Films

In the past decade, the development of atomic electron tomography (AET) [1] has allowed for the 3D characterization of atomic positions in nanoparticle [2], monolayer [3], and needle [4] geometries. Furthermore, many technologically important systems are synthesized and utilized as thin films. Several challenges in sample preparation and data analysis have been overcome to expand the scope of AET to these systems. Polycrystalline yttrium-doped hafnium dioxide (HfO 2 ) was chosen as a model system, because it is technologically relevant as a high capacitance dielectric and ferroelectric.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Spin-Forbidden Excitations in the Magneto-optical Spectra of CrI 3 Tuned by Covalency

Spin-forbidden (Δ⁢𝑆 ≠0) multiplet excitations and their coupling to magnetic properties are of increasing importance for magneto-optical studies of correlated materials. Nonetheless, the mechanisms for optically brightening these transitions and their generality remain poorly understood. Here, we report magnetic circular dichroism (MCD) spectroscopy on the van der Waals ferromagnet (FM) CrI 3 . Previously unreported spin-forbidden (Δ⁢𝑆 =1) 4 𝐴 2⁢g → 2 𝐸 g / 2 𝑇 1⁢g Cr 3+ 𝑑⁢𝑑 excitations are observed near the ligand-to-metal charge-transfer excitation threshold. The assignment of these excitations and their Cr 3+ multiplet character is established through complementary Cr 𝐿 3 -edge resonant inelastic x-ray scattering measurements along with charge-transfer multiplet calculations and chemical trends in the chromium trihalide series (Cr⁢𝑋 3 , 𝑋 = Cl, Br, I). We utilize the high sensitivity of MCD spectroscopy to study the thickness-dependent optical response. The spin-forbidden excitations remain robust down to the monolayer limit, and we observe a significant magnetic-field dependence of the MCD spectrum across the antiferromagnetic-to-FM transition in few-layer samples. We preliminarily attribute this behavior to changes in the metal-ligand covalency with magnetic state. Our results clarify the magneto-optical response of CrI 3 and identify covalency as a central mechanism for the brightening and field tunability of spin-forbidden multiplet excitations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Landau-level composition of bound exciton states in magnetic field

Here, we present a theory that studies the state composition of a bound exciton in magnetic field. Using a basis set made of products of free electron and hole wave functions in Landau gauge, we derive a secular equation which shows the relation between Landau levels (LLs) of the electron and hole when a bound exciton is formed. Focusing on excitons in the light cone, we establish a scattering selection rule for the interaction of an electron in LL 𝑛 e with a hole in LL 𝑛 h . We solve the resulting secular equation and identify a simple pairing law, 𝑛 e =𝑛 h +𝑙, which informs us on the construction of a bound exciton state with magnetic quantum number 𝑙, and on the interaction of the exciton magnetic moment with magnetic field. We obtain good agreement between theory results and recent measurements of the diamagnetic shifts of exciton states in WSe 2 monolayers.

2-dimensional systems↗
DOE OSTI2026

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗
DOE OSTI2026

Interlayer Exciton Condensates between Second Landau Level Orbitals in Double Bilayer Graphene

Here, we present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and probe their interlayer QH states. When both layers occupy the N = 0 orbital, we observe both interlayer exciton condensates (ECs) at integer total filling and interlayer fractional QH states, echoing the results in double monolayer graphene. In contrast to previous studies, however, when both BLG layers occupy the N = 1 orbital, we also observe quantized drag signals, signifying an interlayer exciton condensate formed between the second LLs. By tuning the layer degree of freedom, we find that this N = 1 EC state arises only when the N = 1 wave function in each BLG is polarized toward the hBN interface to maximize the interlayer Coulomb interaction.

Electrical conductivity↗
DOE OSTI2025

Energy Shifts and Broadening of Excitonic Resonances in Electrostatically Doped Semiconductors

Tuning the density of resident electrons or holes in semiconductors through electrostatic doping provides crucial insight into the composition of the many excitonic complexes that are routinely observed as absorption or photoluminescence resonances in optical studies. Moreover, we can change the way these resonances shift and broaden in energy by controlling the quantum numbers (e.g., spin and valley) of the resident carriers with applied magnetic fields and doping levels, as well as by selecting the quantum numbers of the photoexcited or recombining electron-hole (𝑒−ℎ) pair through optical polarization. Here, we discuss the roles of distinguishability and optimality of excitonic complexes, showing them to be key ingredients that determine the energy shifts and broadening of optical resonances in charge-tunable semiconductors. A distinguishable 𝑒−ℎ pair means that the electron and hole undergoing photoexcitation or recombination have quantum numbers that are not shared by any of the resident carriers. An optimal excitonic complex refers to a complex whose particles come with all available quantum numbers of the resident carriers. Based on the carrier density, magnetic field, and light polarization, all optical resonances may be classified as either distinct or indistinct depending on the distinguishability of the 𝑒−ℎ pair, and the underlying excitonic complex can be classified as either optimal or suboptimal. The universality of these classifications, inherited from the fundamental Pauli exclusion principle, allows us to understand how optical resonances shift in energy and whether they should broaden as doping is increased. This understanding is supported by conclusive evidence that the broadening and decay of optical resonances cannot be simply attributed to enhanced screening when resident carriers are added to a semiconductor. Finally, applying the classification scheme in either monolayer or moiré heterobilayer semiconductor systems, we relate the energy shift and amplitude of the neutral-exciton resonance to the compressibility of the resident carrier gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Slow Quasiparticle Dynamics and Anyonic Statistics in a Fractional Quantum Hall Fabry-Pérot Interferometer

Anyons are two-dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, their exchange statistics can be measured in the edge-state Fabry-Pérot interferometer, wherein the presence of 𝑁 𝑞⁢𝑝 localized anyons contributes a phase 𝑁 𝑞⁢𝑝⁢ 𝜃 𝑎 to the interference pattern where 𝜃 𝑎 is twice the exchange phase. Here we report the observation of large, hysteretic phase jumps in a monolayer graphene Fabry-Pérot interferometer at 𝜈 = 1/3. When the filling factor is increased from 𝜈 < 1/3 toward the center of the plateau, we observe phase slips with magnitude Δ⁢𝜃 ≈ 2⁢𝜋/3, consistent with the addition of individual quasiparticles to the interferometer bulk. These phase slips occur as instantaneous jumps in the interference signal, with intervals between the jumps indicating quasiparticle equilibration times exceeding 20 min. We use this long timescale to investigate the effect of changes in interferometer area 𝐴 𝐼 and 𝑁 𝑞⁢𝑝 independently at fixed magnetic field, revealing a striking memory effect in the phase slip magnitude. In particular, as the 𝜈 =1/3 plateau is approached from higher filling, we observed phase slips with Δ⁢𝜃 significantly larger than 2⁢𝜋/3 over the same range of gate voltage where quantized jumps are seen for increasing 𝜈. We discuss this asymmetry in terms of bulk-edge coupling of quasiparticles localized near the edge or in the bulk, and argue that this effect can be qualitatively reconciled with theoretical expectations for strongly interacting quasiparticles in the presence of weak disorder and strongly nonequilibrium charge dynamics. Besides providing a replication of interferometric measurements sensitive to 𝜃 𝑎 , our results highlight the key role played by charge dynamics on signatures of the anyon phase, and demonstrate that fractional quasiparticles can be indefinitely localized in nonequilibrium configurations.

anyons↗
DOE OSTI2026

Entropy of Strongly Correlated Electrons in a Partially Filled Landau Level

We use high-resolution chemical potential measurements to extract the entropy of monolayer and bilayer graphene in the quantum Hall regime via the Maxwell relation [(𝑑⁢𝜇)/(𝑑⁢𝑇)]| 𝑁 =−[(𝑑⁢𝑆)/(𝑑⁢𝑁)]| 𝑇 . Measuring the entropy from 𝑇 = 300 K down to 𝑇 = 200 mK, we identify the sequential emergence of quantum Hall ferromagnetism, fractional quantum Hall states, and various charge orders by comparing the measured entropy in different temperature regimes with theoretical models. At the lowest temperature of 𝑇 ≈ 200 mK we perform a detailed study of the entropy near even-denominator fractional quantum Hall states in bilayer graphene, and comment on the possible topological origin of the observed excess entropy.

Assouline, Alexandre [University of California, Sa↗
DOE OSTI2025

Intercalation induced quasi-freestanding layer in TiSe 2

Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe 2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a nondispersive two-dimensional feature, while the other shows the characteristics of three-dimensional bulk band dispersion. Core-level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van der Waals gap. Furthermore, the results indicate the formation of a quasi-freestanding TiSe 2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe 2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1⁢𝑇−TiSe 2 can be controlled through the intercalation procedure used in this work.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interacting Dirac magnons in the van der Waals ferromagnet CrBr 3

We study the effects of magnon-magnon interactions in the two-dimensional van der Waals ferromagnet CrBr 3 focusing on its honeycomb lattice structure. Motivated by earlier theoretical predictions of temperature-induced spectral shifts and van Hove singularities in the magnon dispersion [S. S. Pershoguba et al., Phys. Rev. X 8, 011010 (2018)], we go beyond the commonly used thermal magnon approximation by applying second-order perturbation theory in a fully numerical framework. Our analysis uncovers significant deviations from previous analysis: in particular, the predicted singularities are absent, consistent with recent inelastic neutron scattering measurements [S. E. Nikitin et al ., Phys. Rev. Lett. 129, 127201 (2022)]. Moreover, we find that the temperature dependence of the renormalized magnon spectrum exhibits a distinct 𝑇 3 behavior for the optical magnon branch, while retaining 𝑇 2 behavior for the acoustic or down magnon band. This feature sheds light on the collective dynamics of Dirac magnons and their interactions. We further compare the honeycomb case with a triangular Bravais lattice, relevant for ferromagnetic monolayer MnBi 2 ⁢Te 4 , and show that both systems lack singular features while displaying quite distinct thermal trends.

Holstein-Primakoff method↗
DOE OSTI2025

Nanoscale modulation of flat bands via controllable charge density wave defects in 4⁢𝐻⁡𝑏−Ta⁢S 2

Electron correlation is a main driver of exotic quantum phases and their interplay. The 4H b-TaS 2 system, possessing an intrinsic heterostructure of 1T- and 1H -TaS 2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density waves (CDWs) in the 1T layer of 4H b-TaS 2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and leads to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Here, our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision.

Charge density waves↗
DOE OSTI2026

Dynamics of ballistic photocurrents driven by Coulomb scattering in a two-dimensional material

First-principles real-time time-dependent density-functional theory (rt-TDDFT) calculations reveal the existence of ballistic photocurrents generated by Coulomb scattering, which has not previously been considered as a mechanism for the bulk photovoltaic effect. With monolayer GeS as an example, it is predicted that ballistic currents can be comparable to shift currents under experimentally accessible conditions.

2-dimensional systems↗