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At least 469 records · Page 26

Tailoring P2/P3‐Intergrowth in Manganese‐Based Layered Transition Metal Oxide Positive Electrodes via Sodium Content for Na‐Ion Batteries

High-manganese content sodium-ion positive electrodes have received heightened interest as an alternative to contemporary Li-ion chemistries due to their high abundance, low toxicity, and even geographical distribution. However, these materials typically suffer from poor capacity, unstable cycling performance, and sluggish Na + kinetics. Herein, we explore a manganese-based layered transition metal oxide (Na x N 0.25 Mn 0.75 O 2 ) and show by X-ray diffraction (XRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that careful variation of the sodium content can instigate the formation of a biphasic intergrowth. This intergrown P2/P3 material offered a higher capacity than its monophasic P2 counterpart due to the P3 structure having greater low-voltage Mn 3+/4+ redox. Further, the intergrowth material offers greatly enhanced kinetics and cycling stability when compared to single-phase P3 material, due to the stabilizing nature of the P2 structure, elucidated by galvanostatic intermittent titration technique (GITT) and operando synchrotron X-ray diffraction. These results highlight the beneficial effect that the intergrowth structure has on the electrochemical performance of high-manganese content positive electrode for future sodium-ion batteries.

25 ENERGY STORAGE↗

Iodine’s Wild Ride Leading to Photoinstability in Halide Perovskite Solar Cells

Understanding processes that contribute to efficiency losses during long-term operation of perovskite solar cells is crucial for achieving operational stability. Although maximum power point tracking optimizes outdoor performance, it is not uncommon that devices are kept under open-circuit conditions during sunny hours. Under these conditions, charge carriers accumulate at the interfaces rather than flowing through the circuit. In the case of the MAPbI 3 /spiro-OMeTAD interface studied here, hole accumulation leads to formation of I2 and subsequent oxidation of spiro-OMeTAD. By employing in situ absorption measurements, we show that the decrease in power conversion efficiency follows the spiro-OMeTAD oxidation while operating the device under open-circuit conditions. In short-circuit conditions, where photogenerated charge carriers are extracted in the external circuit, the I 2 -induced oxidation of spiro-OMeTAD and the device instability are minimized. The photoinduced expulsion of iodine from MAPbI 3 into spiro-OMeTAD discussed in this work provides new insight into the photoinstability of perovskite solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of a high efficiency thin silicon solar cell

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Lindmayer, J.↗

Experimental impacts into Teflon targets and LDEF thermal blankets

The Long Duration Exposure Facility (LDEF) exposed approximately 20 sq m of identical thermal protective blankets, predominantly on the Ultra-Heavy Cosmic Ray Experiment (UHCRE). Approximately 700 penetration holes greater than 300 micron in diameter were individually documented, while thousands of smaller penetrations and craters occurred in these blankets. As a result of their 5.7 year exposure and because they pointed into a variety of different directions relative to the orbital motion of the nonspinning LDEF platform, these blankets can reveal important dynamic aspects of the hypervelocity particle environment in near-earth orbit. The blankets were composed of an outer teflon layer (approximately 125 micron thick), followed by a vapor-deposited rear mirror of silver (less than 1000 A thick) that was backed with an organic binder and a thermal protective paint (approximately 50 to 75 micron thick), resulting in a cumulative thickness (T) of approximately 175 to 200 microns for the entire blanket. Many penetrations resulted in highly variable delaminations of the teflon/metal or metal/organic binder interfaces that manifest themselves as 'dark' halos or rings, because of subsequent oxidation of the exposed silver mirror. The variety of these dark albedo features is bewildering, ranging from totally absent, to broad halos, to sharp single or multiple rings. Over the past year experiments were conducted over a wide range of velocities (i.e., 1 to 7 km/s) to address velocity dependent aspects of cratering and penetrations of teflon targets. In addition, experiments were performed with real LDEF thermal blankets to duplicate the LDEF delaminations and to investigate a possible relationship of initial impact conditions on the wide variety of dark halo and ring features.

Hoerz, F.↗

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

Okojie, Robert S.↗

Increasing Durability of Flame-Sprayed Strain Gauges

Thermally sprayed dielectric ceramic coatings are the primary means of attaching strain and temperature gauges to hot-section rotating parts of turbine engines. As hot-section temperatures increase, lifetimes of installed gauges decrease, and seldom exceed one hour above 2,000 F (approx.1,100 C). Advanced engine components are expected to operate at temperatures approaching 2,200 F (approx.1,200 C), and the required high-temperature lifetime is 10 hours minimum. Typically, to enable a ceramic coating to adhere to the smooth surface of an engine component, a thermally sprayed NiCrAlY or NiCoCrAlY bond coat is applied to the smooth surface, thereby providing a textured surface to which the ceramic coat can adhere. The main failure mechanism of this system is decohesion and/or delamination at the interface between the ceramic top coat and the bond coat, caused by oxidation of the bond coat and stresses from the mismatch between the coefficients of thermal expansion of the ceramic top coat and the metallic bond coat. The approach taken to increase the high-temperature lifetime of a gauge attached to an engine component by the method described above involves (1) selective oxidation of the bond coat by means of a heat treatment in reduced oxygen partial pressure followed by (2) the application of a noble-metal diffusion barrier. In experiments to test this approach, heat treatments of NiCoCrAlY bond coats were carried out in a tube furnace in which, in each case, the temperature was alternately (1) increased at a rate of 3 C per minute and (2) held steady for one hour until the desired temperature was reached. The tube furnace was continuously purged with dry nitrogen gas. A final heat-treatment temperature range of 1,600 to 1,800 F (871 to 982 C) proved most beneficial.

Gregory, Otto J.↗

Electrostatically Enhanced Buried Interface Binding of Self‐Assembled Monolayers for Efficient And Stable Inverted Perovskite Solar Cells

Inverted p‐i‐n structure perovskite solar cells (PSCs) have outperformed traditional n‐i‐p PSCs in recent years. A key advancement is the use of self‐assembled monolayers (SAMs) as hole transport layers. One class of widely used SAMs is carbazole‐based phosphonic acids. However, it is found that these SAMs lack strong binding with transparent conducting oxides (TCO) and perovskite. The weak binding strength results in suboptimal interfacial adhesion of the buried interface, which limits the device's stability. Here, interfacial binding is enhanced by increasing the dipole moment that creates a strong interfacial electric field that enhances electrostatic interactions at the TCO/perovskite interface, while incorporating tailored functional groups in SAMs to improve chemical anchoring to TCO and binding to perovskite. Specifically, the donor‐acceptor SAM molecule 4‐(7‐(4‐(bis(4‐methoxyphenyl)amino)‐2,5‐difluorophenyl)benzo[c][1,2,5]thiadiazol‐4‐yl)benzoic acid (PAFTB) is employed, which features an enhanced dipole moment along with electron‐donating and electron‐withdrawing functional groups to optimize interfacial interactions. Compared to extensively used [2‐(9H‐carbazol‐9‐yl)ethyl]phosphonic acid (2PACz), PAFTB enhances total interfacial adhesion by 2.8 times, thereby improving the thermal stability of the layer. Using this approach, PSCs are demonstrated with a certified quasi‐steady‐state power conversion efficiency of 24.9% and maintain 80% of the initial efficiency after 900 h of maximum power point tracking at 85 °C.

Interfacial adhesion↗

Paleosols and the chemical evolution of the atmosphere

The chemistry and mineralogy of soils reflects the chemistry of the atmosphere below which they develop. Today the presence of a cover of land plants can obscure the signature of a highly oxidizing atmosphere. Prior to the advent of higher land plants ca. 400 m.y. ago the obscuring effect of a biological interface should have been minor. It can be shown that under such conditions the behavior of ferrous iron during weathering depends on the relationship between the ratio of the net concentration of oxidants to the concentration of acids in rainwater, and on the ratio of the oxygen demand to the acid demand for complete weathering of the parent rock. An analysis of the behavior of iron in some 15 paleosols between 1.0 and 2.9 b.y. in age showed some time ago that iron was retained, or largely retained, in paleosols developed on rocks with a low ratio of oxidant demand to acid demand (R value) and was lost from paleosols with a high R value. The results indicate that between 1.1 and 2.9 b.y.b.p. the ratio of the net concentration of oxidants to CO2 in rainwater was less than ca. 1/600 of the present-day value. Work during the past year has sought to extend the data base for paleosols and to define more precisely the relationships between the composition of paleosols and the chemistry of the atmosphere below which they developed.

Holland, H. D.↗

Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The design is based on a proprietary library of differential current switching logic cells implemented in the standard 90-nm CMOS 9SF technology from IBM. The proprietary low-power LVDS physical interface is fully compatible with the SpaceWire standard, and can be directly connected to the SFP MSA (small form factor pluggable Multiple Source Agreement) optical transponder. The low-speed parallel interfaces are fully compatible with the standard 1.8 V CMOS input/output devices. The utilized proprietary annular CMOS layout structures provide TID tolerance above 1.2 MRad. The complete chip consumes less than 150 mW of power from a single 1.8-V positive supply source.

Katzman, Vladimir↗

Deciphering Catalyst–Support Interaction via Doping for Highly Active and Durable Oxygen Evolution Catalysis

The design of oxygen evolution reaction (OER) electrocatalysts demands a delicate balance between activity and stability. Here, in this study, we present a rational design approach that leverages catalyst-support interactions to enhance both the intrinsic activity and durability of Ir-based catalysts. Our study reveals that while Mo doping energetically promotes the formation of high-valent Ir species, enhancing intrinsic catalytic activity, it also leads to a reduction in electrical conductivity. These findings emphasize that supporting doping can introduce both beneficial and limiting effects, highlighting the need for a carefully balanced design strategy to optimize the overall OER performance. Simultaneously, in situ analytical techniques and comparative evaluation reveal the crucial role of oxide supports in stabilizing the catalyst. These findings highlight the pivotal role of interface engineering in maintaining catalyst integrity and the need for support materials that balance dopant-driven electronic promotion with structural and electrochemical robustness. These interconnected degradation pathways highlight the need to move beyond a catalyst-centric view and instead adopt a system-level understanding of the stability. Our approach offers a strong foundation for the rational design and evaluation of high-performance OER electrocatalysts for electrochemical energy applications.

Kim, Jinyeop [Korea Advanced Inst. Science and Tec↗

Materials sciences research

Research projects involving materials research conducted by various international test facilities are reported. Much of the materials research is classified in the following areas: (1) acousto-optic, acousto-electric, and ultrasonic research, (2) research for elucidating transport phenomena in well characterized oxides, (3) research in semiconductor materials and semiconductor devices, (4) the study of interfaces and interfacial phenomena, and (5) materials research relevant to natural resources. Descriptions of the individual research programs are listed alphabetically by the name of the author and show all personnel involved, resulting publications, and associated meeting speeches.

Source record↗

The effect of processing conditions on the GaAs/plasma-grown insulator interface

The effect of processing conditions on the interface state density was evaluated from C-V measurements on metal-oxide-semiconductor capacitors. The optimum processing conditions for the minimum surface state density was found to be related to the postoxidation annealing temperature and time, and was independent of chemical treatments prior to oxidation. Annealing at the optimum condition (i.e., at 350 C for 1 h in either nitrogen or hydrogen gas, with or without an aluminum pattern on the oxide) reduces the fast surface state density by about one order of magnitude. By using a nitrogen/oxygen plasma, the static dielectric constant of the oxide decreased as the N/O ratio was increased, and nitrogen was incorporated into the oxide. In addition, the fast surface state density was reduced as a result of this nitridation process.

Hshieh, F. I.↗

Explosive Joining for the Mars Sample Return Mission

A unique, small-scale, ribbon explosive joining process is being developed as an option for closing and sealing a metal canister to allow the return of a pristine sample of the Martian surface and atmosphere to Earth. This joining process is accomplished by an explosively driven, high-velocity, angular collision of the metal, which melts and effaces the oxide films from the surfaces to allow valence electron sharing to bond the interface. Significant progress has been made through more than 100 experimental tests to meet the goals of this ongoing developmental effort. The metal of choice, aluminum alloy 6061, has been joined in multiple interface configurations and in complete cylinders. This process can accommodate dust and debris on the surfaces to be joined. It can both create and sever a joint at its midpoint with one explosive input. Finally, an approach has been demonstrated that can capture the back blast from the explosive.

Bement, Laurence J.↗

Organic Modification of a Layered Silicate by Co-Ion Exchange of an Alkyl Ammonium and a Mono-Protonated Diamine

Co-Ion exchange of the interlayer cations of a layered silicate with a mono-protonated aromatic diamine and an alkyl ammonium ion into the silicate galleries. The presence of the alkyl ammonium ion provides low oligomer melt viscosity during processing. The presence of the diamine allows chemical reaction between the silicate surface modification and the monomers. This reaction strengthens the polymer silicate interface, and ensures irreversible separation of the individual silicate layers. Improved polymer thermal oxidative stability and mechanical properties are obtained.

Sandi G Campbell↗

Turbomachinery Clearance Control

Controlling interface clearances is the most cost effective method of enhancing turbomachinery performance. Seals control turbomachinery leakages, coolant flows and contribute to overall system rotordynamic stability. In many instances, sealing interfaces and coatings are sacrificial, like lubricants, giving up their integrity for the benefit of the component. They are subjected to abrasion, erosion, oxidation, incursive rubs, foreign object damage (FOD) and deposits as well as extremes in thermal, mechanical, aerodynamic and impact loadings. Tribological pairing of materials control how well and how long these interfaces will be effective in controlling flow. A variety of seal types and materials are required to satisfy turbomachinery sealing demands. These seals must be properly designed to maintain the interface clearances. In some cases, this will mean machining adjacent surfaces, yet in many other applications, coatings are employed for optimum performance. Many seals are coating composites fabricated on superstructures or substrates that are coated with sacrificial materials which can be refurbished either in situ or by removal, stripping, recoating and replacing until substrate life is exceeded. For blade and knife tip sealing an important class of materials known as abradables permit blade or knife rubbing without significant damage or wear to the rotating element while maintaining an effective sealing interface. Most such tip interfaces are passive, yet some, as for the high-pressure turbine (HPT) case or shroud, are actively controlled. This work presents an overview of turbomachinery sealing. Areas covered include: characteristics of gas and steam turbine sealing applications and environments, benefits of sealing, types of standard static and dynamics seals, advanced seal designs, as well as life and limitations issues.

Chupp, Raymond E.↗

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗