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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 487 records · Page 27
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Stochastic Error Cancellation in Analog Quantum Simulation

Analog quantum simulation is a promising path towards solving classically intractable problems in many-body physics on near-term quantum devices. However, the presence of noise limits the size of the system and the length of time that can be simulated. In our work, we consider an error model in which the actual Hamiltonian of the simulator differs from the target Hamiltonian we want to simulate by small local perturbations, which are assumed to be random and unbiased. We analyze the error accumulated in observables in this setting and show that, due to stochastic error cancellation, with high probability the error scales as the square root of the number of qubits instead of linearly. We explore the concentration phenomenon of this error as well as its implications for local observables in the thermodynamic limit. Moreover, we show that stochastic error cancellation also manifests in the fidelity between the target state at the end of time-evolution and the actual state we obtain in the presence of noise. This indicates that, to reach a certain fidelity, more noise can be tolerated than implied by the worst-case bound if the noise comes from many statistically independent sources.

Analog quantum simulation↗
DOE OSTI2023

The complexity of NISQ

Abstract The recent proliferation of NISQ devices has made it imperative to understand their power. In this work, we define and study the complexity class , which encapsulates problems that can be efficiently solved by a classical computer with access to noisy quantum circuits. We establish super-polynomial separations in the complexity among classical computation, , and fault-tolerant quantum computation to solve some problems based on modifications of Simon’s problems. We then consider the power of for three well-studied problems. For unstructured search, we prove that cannot achieve a Grover-like quadratic speedup over classical computers. For the Bernstein-Vazirani problem, we show that only needs a number of queries logarithmic in what is required for classical computers. Finally, for a quantum state learning problem, we prove that is exponentially weaker than classical computers with access to noiseless constant-depth quantum circuits.

42 ENGINEERING↗
DOE OSTI2024

Nanoparticle self-assemblies with modern complexity

Thanks to decades of tireless efforts, nanoparticle assemblies have reached at an extremely high level of controllability, sophistication, and complexity, with new insights provided by integration with graph theory, cutting-edge characterization, and machine learning (ML)-based computation and modeling, as well as with ever-diversifying applications in energy, catalysis, biomedicine, optics, electronics, magnetics, organic biosynthesis, and quantum technology. Nanoparticle assemblies can be crystalline, known as superlattices or supracrystals. Their assembly entails a transition from disorder—dispersed nanoparticles—to order, which can be achieved through classical nucleation pathways or nonclassical pathways via prenucleation precursors or particle aggregation. Further, the periodic lattices allow facile manipulations of electrons, phonons, photons, and even spins, leading to advanced device components and metamaterials. Meanwhile, aperiodic assemblies out of nanoparticles, such as gels, networks, and amorphous solids, also start to attract attentions. Despite the loss of periodicity, symmetry-lowering or symmetry-breaking three-dimensional (3D) structures emerge with unique properties, such as chiroptical activity, topological mechanical strength, and quantum entanglement. Real-space imaging such as electron microscopy and X-ray based tomography methods are utilized to characterize these complex structures, while mathematical tools such as graph theories are in need to describe such complex structures. This issue aims to provide a timely review of the efforts in this greatly broadened materials design space including experiment, simulation, theory, and applications. Nine top experts (and their teams) from four countries deliver six review papers, summarizing fundamental mechanistic understandings of nanoparticle assemblies, highlighted with the developments of state-of-the-art in situ characterization tools and ML-assisted reverse engineering, and newly emergent applications of nanoarchitectures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Model-Free Measurement of Local Entropy Production and Extractable Work in Active Matter

Time-reversal symmetry breaking and entropy production are universal features of nonequilibrium phenomena. Despite its importance in the physics of active and living systems, the entropy production of systems with many degrees of freedom has remained of little practical significance because the high dimensionality of their state space makes it difficult to measure. Here, in this work, we introduce a local measure of entropy production and a numerical protocol to estimate it. We establish a connection between the entropy production and extractability of work in a given region of the system and show how this quantity depends crucially on the degrees of freedom being tracked. We validate our approach in theory, simulation, and experiments by considering systems of active Brownian particles undergoing motility-induced phase separation, as well as active Brownian particles and E.coli in a rectifying device in which the time-reversal asymmetry of the particle dynamics couples to spatial asymmetry to reveal its effects on a macroscopic scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Physics and applications of quantum dot lasers for silicon photonics

Abstract Photonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Induced Superconducting Pairing in Integer Quantum Hall Edge States

Indium arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor–superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work, we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. Further, we analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Doppler-Free Saturation Spectroscopy (DFSS) for Magnetic and Electric Field Measurements in an FRC plasma

The Cooperative Research and Development Agreement (CRADA) between Oak Ridge National Laboratory (ORNL) and TAE Technologies (TAE) focused on a feasibility study of Doppler-free saturation spectroscopy (DFSS) as a diagnostic strategy to measure the internal magnetic and electric fields of TAE’s C-2W field-reversed configuration (FRC) fusion device. Non-perturbative measurements of magnetic and electric fields in the core of FRCs can provide critical information needed to constrain equilibrium models and for the continued advancement of the fusion research program at TAE. DFSS is a well-established, laser-based absorption spectroscopy technique used to suppress inhomogeneous (Doppler) broadening linewidths and reveal Zeeman/Stark split hyperfine structures of target emission lines. The collaboration involved the use of ORNL’s suite of experimentally validated quantum mechanical modelling codes to simulate theoretical atomic spectra for a variety of machine parameters and laser beam configurations. TAE’s expertise was heavily used to provide measurements/models of the required machine parameters needed as inputs to the simulations. Results of an all-encompassing error analysis demonstrate the favourable capabilities of the diagnostic and provided invaluable insights as to how DFSS can be best used to accurately measure internal B/E-fields in C-2W.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2003

Nanostructured Materials for Solar Cells

The use of both inorganic and organic nanostructured materials in producing high efficiency photovoltaics is discussed in this paper. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of semiconductor quantum dots in an ordinary p-i-n solar cell. In addition, it has also recently been demonstrated that quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. A similar improvement in these types of cells has also been observed by employing single wall carbon nanotubes. This relatively new carbon allotrope may assist both in the disassociation of excitons as well as carrier transport through the composite material. This paper reviews the efforts that are currently underway to produce and characterize these nanoscale materials and to exploit their unique properties.

Bailey, Sheila↗
DOE OSTI2020

High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS 2 ) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light–matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response ( R ) and external quantum efficiency (EQE) of few-atomic layered MoS 2 phototransistors fabricated on a SiO 2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm–900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 10 3 A W -1 under white light illumination with an optical power P opt = 0.02 nW. The R value increased to 3.5 × 10 3 A W -1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 10 3 and 6 × 10 3 A W -1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 10 5 % and 10 6 % measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent–dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Preparation of ternary hydrophobic magnetic deep eutectic solvents and an investigation into their physicochemical properties

Hydrophobic magnetic deep eutectic solvents (HMDESs) are considered a subclass of DESs comprised of a hydrogen bond acceptor (HBA), hydrogen bond donor (HBD), and a metal halide salt. These DESs can be easily manipulated by an external magnet and employed in numerous applications including liquid–liquid extractions and catalysis. In this work, a total of forty-six (46) HMDESs were prepared and their physicochemical properties studied. Six structurally unique ionic and non-ionic HBAs were combined with lanthanide and transition metal halide salts and twelve different HBDs to prepare room temperature eutectic solvents. The viscosities of HMDESs ranged from 46 centipoise (cP) to 124,600 cP at 23 °C. Their magnetic susceptibilities, studied by superconducting quantum interference device (SQUID) magnetometry and a magnetic susceptibility balance, varied from 3.03 Bohr magnetons (μB) to 9.32 μB when the type of metal halide salt and its molar ratio were varied. Thermal stabilities ranged from 151.1 °C to 308.5 °C at 5% mass loss. Further, all HMDESs comprised of ionic HBA were observed to be insoluble in hexane. This study demonstrates that the physicochemical properties of HMDESs can easily be tailored by varying the DES constituents as well as their molar ratio. The structural tunability of these solvents make them highly attractive candidates for a plethora of applications ranging from extractions to electrochromic applications, where HMDESs can be easily manipulated by an external magnetic field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Probing Dynamic Phase Changes in Electrochemical Systems with Cryogenic and in Situ Analytical Electron Microscopy (Final Technical Report)

In this project, we focus on the advancement of our newly developed, unique in situ and cryogenic analytical electron microscopy (AEM) techniques and the development of additional high-end capabilities to quantitatively elucidate the mechanisms of resistive state changes in solid-state electrochemical materials for non-volatile, neuromorphic memory. The objectives of the proposed research are (1) to characterize and elucidate the mechanisms by which electronic state changes occur in various solid-state devices to build guiding principles for electrochemically activated smart materials; (2) to advance our understanding of such mechanisms by coupling cryogenic and in situ techniques to control kinetics of the observed mechanisms while mitigating probe-induced damage; and (3) to utilize additional advanced techniques including electron-beam induced current and quantum mechanical simulations in order to identify the underlying fundamental science of such processes, including roles of defect formation and its effect on phase nucleation, as well as dynamics of these processes in the electrochemical systems at the nanometer scale.

25 ENERGY STORAGE↗
NASA NTRS2014

Anomalous Thrust Production from an RF Test Device Measured on a Low-Thrust Torsion Pendulum

This paper describes the eight-day August 2013 test campaign designed to investigate and demonstrate viability of using classical magnetoplasmadynamics to obtain a propulsive momentum transfer via the quantum vacuum virtual plasma. This paper will not address the physics of the quantum vacuum plasma thruster, but instead will describe the test integration, test operations, and the results obtained from the test campaign. Approximately 30-50 micro-Newtons of thrust were recorded from an electric propulsion test article consisting primarily of a radio frequency (RF) resonant cavity excited at approximately 935 megahertz. Testing was performed on a low-thrust torsion pendulum that is capable of detecting force at a single-digit micronewton level, within a stainless steel vacuum chamber with the door closed but at ambient atmospheric pressure. Several different test configurations were used, including two different test articles as well as a reversal of the test article orientation. In addition, the test article was replaced by an RF load to verify that the force was not being generated by effects not associated with the test article. The two test articles were designed by Cannae LLC of Doylestown, Pennsylvania. The torsion pendulum was designed, built, and operated by Eagleworks Laboratories at the NASA Johnson Space Center of Houston, Texas. Approximately six days of test integration were required, followed by two days of test operations, during which, technical issues were discovered and resolved. Integration of the two test articles and their supporting equipment was performed in an iterative fashion between the test bench and the vacuum chamber. In other words, the test article was tested on the bench, then moved to the chamber, then moved back as needed to resolve issues. Manual frequency control was required throughout the test. Thrust was observed on both test articles, even though one of the test articles was designed with the expectation that it would not produce thrust. Specifically, one test article contained internal physical modifications that were designed to produce thrust, while the other did not (with the latter being referred to as the "null" test article). Test data gathered includes torsion pendulum displacement measurements which are used to calculate generated force, still imagery in the visible spectrum to document the physical configuration, still imagery in the infrared spectrum to characterize the thermal environment, and video imagery. Post-test data includes static and animated graphics produced during RF resonant cavity characterization using the COMSOL Multiphysics® software application. Excerpts from all of the above are included and discussed in this paper. Lessons learned from test integration and operations include identification of the need to replace manual control of the resonant cavity target frequency with an automated frequency control capability. Future test plans include the development of an automatic frequency control circuit. Test results indicate that the RF resonant cavity thruster design, which is unique as an electric propulsion device, is producing a force that is not attributable to any classical electromagnetic phenomenon and therefore is potentially demonstrating an interaction with the quantum vacuum virtual plasma. Future test plans include independent verification and validation at other test facilities.

Brady, David↗
DOE OSTI2023

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

2D materials↗
DOE OSTI2023

A perspective on the pathway to a scalable quantum internet using rare-earth ions

The ultimate realization of a global quantum internet will require advances in scalable technologies capable of generating, storing, and manipulating quantum information. The essential devices that will perform these tasks in a quantum network are quantum repeaters, which will enable the long-range distribution of entanglement between distant network nodes. Here, in this review, we provide an overview of the primary functions of a quantum repeater and discuss progress that has been made toward the development of repeaters with rare-earth ion doped materials while noting challenges that are being faced as the technologies mature. We give particular attention to erbium, which is well suited for networking applications. Finally, we provide a discussion of near-term benchmarks that can further guide rare-earth ion platforms for impact in near-term quantum networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Request for the establishment of quantum information foundries

Quantum information science still requires basic science research to achieve its full potential. However, scientists require access to fabricated device samples if we are to utilize the full toolset for solving the pressing issues in the field such as materials, device layout, or optimal error correction methods.Currently, access to samples is either prohibitively expensive, or requires close collaboration with one of the few groups in the world developing these systems. A dedicated quantum foundry could,in principle,provide affordable samples designed with current best practices to a host of scientists who otherwise do not have access. We detail several different foundry models which we believe will assist the community in developing the science for both the underlying processes, as well as the more advanced chip layout and circuit design. Opening access to the broader community has the potential to significantly lower the barrier to entry and vastly improve the ability for researchers in fields ranging from condensed matter to materials characterization to systems engineering to contribute to accelerating the advance of quantum information science and technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1985

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.

Ketterson, A.↗
NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗
DOE OSTI2022

Electronic band structure and magnetism of CoFeV 0.5 Mn 0.5 Si

Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices.

36 MATERIALS SCIENCE↗