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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 505 records · Page 28

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NASA NTRS1989

Information storage at the molecular level - The design of a molecular shift register memory

The control of electron transfer rates is discussed and a molecular shift register memory at the molecular level is described. The memory elements are made up of molecules which can exist in either an oxidized or reduced state and the bits can be shifted between the cells with photoinduced electron transfer reactions. The device integrates designed molecules onto a VLSI substrate. A control structure to modify the flow of information along a shift register is indicated schematically.

Beratan, David N.↗

NASA NTRS1989

Associative memory - An optimum binary neuron representation

Convergence mechanism of vectors in the Hopfield's neural network is studied in terms of both weights (i.e., inner products) and Hamming distance. It is shown that Hamming distance should not always be used in determining the convergence of vectors. Instead, weights (which in turn depend on the neuron representation) are found to play a more dominant role in the convergence mechanism. Consequently, a new binary neuron representation for associative memory is proposed. With the new neuron representation, the associative memory responds unambiguously to the partial input in retrieving the stored information.

Awwal, A. A.↗

NASA NTRS1991

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗

NASA NTRS1991

Stacked-Gate FET's For Analog Memory Elements

Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

Thakoor, Anilkumar P.↗

NASA NTRS1991

Lightweight Memory-Metal Pin Puller

Memory-metal pin puller designed for use in aperture-cover mechanism of camera aboard spacecraft adapted to small-volume instrument environments that must be kept free of contamination. Includes memory-metal wires pulling pin when heated. Small and light in weight, uses relatively simple electronic drive circuitry consisting of timed source of current. Adapted to operate at cryogenic temperatures and in vacuum as well as in normal-temperature environment, cycled large number of times without degradation of performance.

Ford, Virginia G.↗

NASA NTRS1991

Trinary Associative Memory Would Recognize Machine Parts

Trinary associative memory combines merits and overcomes major deficiencies of unipolar and bipolar logics by combining them in three-valued logic that reverts to unipolar or bipolar binary selectively, as needed to perform specific tasks. Advantage of associative memory: one obtains access to all parts of it simultaneously on basis of content, rather than address, of data. Consequently, used to exploit fully parallelism and speed of optical computing.

Liu, Hua-Kuang↗

NASA NTRS1991

Magnet/Hall-Effect Random-Access Memory

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Wu, Jiin-Chuan↗

NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗

NASA NTRS1990

Distributed memory approaches for robotic neural controllers

The suitability is explored of two varieties of distributed memory neutral networks as trainable controllers for a simulated robotics task. The task requires that two cameras observe an arbitrary target point in space. Coordinates of the target on the camera image planes are passed to a neural controller which must learn to solve the inverse kinematics of a manipulator with one revolute and two prismatic joints. Two new network designs are evaluated. The first, radial basis sparse distributed memory (RBSDM), approximates functional mappings as sums of multivariate gaussians centered around previously learned patterns. The second network types involved variations of Adaptive Vector Quantizers or Self Organizing Maps. In these networks, random N dimensional points are given local connectivities. They are then exposed to training patterns and readjust their locations based on a nearest neighbor rule. Both approaches are tested based on their ability to interpolate manipulator joint coordinates for simulated arm movement while simultaneously performing stereo fusion of the camera data. Comparisons are made with classical k-nearest neighbor pattern recognition techniques.

Jorgensen, Charles C.↗

NASA NTRS1990

Identification of aerospace acoustic sources using sparse distributed associative memory

A pattern recognition system has been developed to classify five different aerospace acoustic sources. In this paper the performance of two new classifiers, an associative memory classifier and a neural network classifier, is compared to the performance of a previously designed system. Sources are classified using features calculated from the time and frequency domain. Each classifier undergoes a training period where it learns to classify sources correctly based on a set of known sources. After training the classifier is tested with unknown sources. Results show that over 96 percent of sources were identified correctly with the new associative memory classifier. The neural network classifier identified over 81 percent of the sources correctly.

Scott, E. A.↗

NASA NTRS1990

Shape-memory properties in Ni-Ti sputter-deposited film

A Ni-Ti alloy, generically called nitinol, was prepared from sputtering targets of two different compositions on glass substrates using a dc magnetron source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.

Busch, J. D.↗

NASA NTRS1991

Design of a Shape Memory Alloy deployment hinge for reflector facets

A design concept for a Shape Memory Alloy (SMA) actuated hinge mechanism for deploying segmented facet-type reflector surfaces on antenna truss structures is presented. The mechanism uses nitinol, a nickel-titanium shape memory alloy, as a displacement-force micro-actuator. An electrical current is used to resistively heat a 'plastically' elongated SMA actuator wire, causing it to contract in response to a thermally-induced phase transformation. The resulting tension creates a moment, imparting rotary motion between two adjacent panels. Mechanical stops are designed into the device to limit its range of motion and to establish positioning accuracy at the termination of deployment. The concept and its operation are discussed in detail, and an analytical dynamic simulation model is presented. The model has been used to perform nondimensionalized parametric design studies.

Anders, W. S.↗

NASA NTRS1990

Execution time support for scientific programs on distributed memory machines

Optimizations are considered that are required for efficient execution of code segments that consists of loops over distributed data structures. The PARTI (Parallel Automated Runtime Toolkit at ICASE) execution time primitives are designed to carry out these optimizations and can be used to implement a wide range of scientific algorithms on distributed memory machines. These primitives allow the user to control array mappings in a way that gives an appearance of shared memory. Computations can be based on a global index set. Primitives are used to carry out gather and scatter operations on distributed arrays. Communications patterns are derived at runtime, and the appropriate send and receive messages are automatically generated.

Berryman, Harry↗

NASA NTRS1991

Prediction of error rates in dose-imprinted memories on board CRRES by two different methods

An analysis of the expected space radiation effects on the single event upset (SEU) properties of CMOS/bulk memories onboard the Combined Release and Radiation Effects Satellite (CRRES) is presented. Dose-imprint data from ground test irradiations of identical devices are applied to the predictions of cosmic-ray-induced space upset rates in the memories onboard the spacecraft. The calculations take into account the effect of total dose on the SEU sensitivity of the devices as the dose accumulates in orbit. Estimates of error rates, which involved an arbitrary selection of a single pair of threshold linear energy transfer (LET) and asymptotic cross-section values, were compared to the results of an integration over the cross-section curves versus LET. The integration gave lower upset rates than the use of the selected values of the SEU parameters. Since the integration approach is more accurate and eliminates the need for an arbitrary definition of threshold LET and asymptotic cross section, it is recommended for all error rate predictions where experimental sigma-versus-LET curves are available.

Brucker, G. J.↗

NASA NTRS1992

Experimental Optoelectronic Associative Memory

Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

Chao, Tien-Hsin↗

NASA NTRS1992

Shape-Memory Wires Switch Rotary Actuator

Thermomechanical rotary actuator based on shape-memory property of alloy composed of equal parts of titanium and nickel. If alloy stretched while below transition temperature, it reverts to original length when heated above transition temperature. Two capstans on same shaft wrapped with shape-memory wires. As one wire heated, it contracts and stretches opposite wire. Wires heated in alternation so they switch shaft between two extreme angular positions; "on" and "off" positions of rotary valve.

Brudnicki, Myron J.↗

NASA NTRS1990

BIRD: A general interface for sparse distributed memory simulators

Kanerva's sparse distributed memory (SDM) has now been implemented for at least six different computers, including SUN3 workstations, the Apple Macintosh, and the Connection Machine. A common interface for input of commands would both aid testing of programs on a broad range of computer architectures and assist users in transferring results from research environments to applications. A common interface also allows secondary programs to generate command sequences for a sparse distributed memory, which may then be executed on the appropriate hardware. The BIRD program is an attempt to create such an interface. Simplifying access to different simulators should assist developers in finding appropriate uses for SDM.

Rogers, David↗

NASA NTRS1991

Content addressable memory project

The progress on the Rutgers CAM (Content Addressable Memory) Project is described. The overall design of the system is completed at the architectural level and described. The machine is composed of two kinds of cells: (1) the CAM cells which include both memory and processor, and support local processing within each cell; and (2) the tree cells, which have smaller instruction set, and provide global processing over the CAM cells. A parameterized design of the basic CAM cell is completed. Progress was made on the final specification of the CPS. The machine architecture was driven by the design of algorithms whose requirements are reflected in the resulted instruction set(s). A few of these algorithms are described.

Hall, Josh↗