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Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.
Series switching diodes triggered on by passing above threshold voltage. High-voltage switch made by connecting multitude of deep-impurity, double-injection devices in series with each other and with another, triggerable high-voltage device such as thyristor. Device operates near ground potential to avoid insulation problems in triggering circuit.
The use of nuclear reactors to generate electrical power for future space missions will require the electrical components used in the power conditioning, control, and transmission subsystem to operate in the associated radiation environments. An initial assessment of neutron irradiation on the electrical and switching characteristics of commercial high power NPN bipolar transistors was investigated. The results clearly show the detrimental effects caused by neutron irradiation on the electrical and switching characteristics of the NPN bipolar power transistor.
A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.
Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.
Techniques for simulating a switching converter are examined. The state equations for the equivalent circuits, which represent the switching converter, are presented and explained. The uses of the Newton-Raphson iteration, low ripple approximation, half-cycle symmetry, and discrete time equations to compute the interval durations are described. An example is presented in which these methods are illustrated by applying them to a parallel-loaded resonant inverter with three equivalent circuits for its continuous mode of operation.
This paper presents a method of modeling a solar array circuit controlled by a hexfet switch on HSPICE. HSPICE models are developed for the solar array current voltage (IV) characteristic and the IRF150 hexfet. Computer simulations are made to verify rate of current change at the load. The equivalent LC circuit for the same current control is modeled to show savings in weight and power in choosing the fet switch over an LC circuit.
A technique for establishing a stable intermediate temperature stage in liquid He/liquid N2 double vessel cryostats is described. The tertiary cold stage, which can be tuned to any temperature between 10 and 60 K, is ideal for cooling IR sensors for use in astronomy and physics applications. The device is called a variable-conductance gas switch. It is essentially a small chamber, located between the cold stage and liquid helium cold-face, whose thermal conductance may be controlled by varying the pressure of helium gas within the chamber. A key feature of this device is the large range of temperature control achieved with a very small (less than 10 mW) heat input from the cryogenic temperature control switch.
Communications satellites of the future are likely to use much narrower beams in order to increase the uplink G/T and the downlink EIRP so that small earth terminals of the VSAT class can achieve full mesh connectivity. These satellites will need onboard switches to route traffic from originating upbeams to destination downbeams. This paper presents a new approach to accomplishing this rerouting using destination-directed packets that inherently carry the information needed to control the onboard switch connections and to adjust the traffic flow among the beams and the stations. The method also inherently provides channel multiplication and DAMA advantages which result in maximally efficient utilization of the space segment resource.
A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.
A calibration model for the Nimbus-7 Scanning Multichannel Microwave Radiometer (SMMR) is studied. This model not only removes major drawbacks of the current calibration model but also helps us understand the performance degradation of the aging instrument. The current Nimbus-7 SMMR calibration algorithm was derived without considering the interference effect between the two orthogonally polarized signals merging at a ferrite polarization selector switch. The resulting calibrated brightness temperatures, considered as a function of scan angle phi, are not symmetric around phi=0. However, neither the origin of the asymmetry nor the manner in which the two orthogonal components are mixed is fully understood. The proposed calibration model incorporates all the leakage factors associated with the ferrite switches along the signal paths. The resulting calibration equations clarify how the orthogonal components of surface brightness are coupled at radiometers. As a consequence, the origin of the asymmetry is clearly identified and explained. In addition, the feasibility of absolute calibration using in-orbit data is discussed.
Solid-state lasers pumped by continuous-wave diode lasers can be Q-switched to obtain high peak power output pulses. The dependence of laser-pulse energy, average output power, peak power, and pulse width on pulse-repetition frequency in Q-switched Nd:YAG and Ho:YLF lasers is determined and compared. At low pulse repetition rates, the much longer upper-stage lifetime in Ho:YLF gives a distinct advantage. At higher pulse rates, the overall laser efficiency and the stimulated emission cross section are more important parameters, leading to an advantage for Nd:YAG. The results are of significance for designing lasers for use in space optical communications and remote sensing systems.
The C-6533/ARC communication system as installed on the test AH-1E Cobra helicopter was modified to allow discrete radio selection of all aircraft radios at the cyclic radio/intercommunication system switch. The current Cobra-fleet use of the C-6533 system is cumbersome, particularly during low-altitude operations. Operationally, the current system C-6533 configuration and design requires the pilot to estimate when he can safely remove his hand from an active flight control to select radios during low-altitude flight. The pilot must then physically remove his hand from the flight control, look inside the cockpit to select and verify the radio selection and then effect the selected radio transmission by activating the radio/ICS switch on the cyclic. This condition is potentially hazardous, especially during low-level flight at night in degraded weather. To improve pilot performance, communications effectiveness, and safety, manprint principles were utilized in the selection of a design modification. The modified C-6533 design was kept as basic as possible for potential Cobra-fleet modification. The communications system was modified and the design was subsequently flight-tested by the U.S. Army Aeroflightdynamics Directorate and NASA at the NASA Ames Research Center, Mountain View, California. The design modification enables the Cobra pilot to maintain hands-on flight controls while selecting radios during nap-of-the-Earth (NOE) flight without looking inside the cockpit which resulted in reduced pilot workload ratings, better pilot handling quality ratings and increased flight safety for the NOE flight environment.
Neither external bias nor energy-storage components required. Three-terminal semiconductor switching circuit features high switching speed, extremely high turnoff safe operating area (area in current-vs-voltage plane), moderately low forward ("on"-state) voltage drop, and efficient utilization of silicon in design of components. Includes gate-turn-off thyristor (GTO) and low-voltage (low-on-resistance) field-effect transistor (FET-1) connected in series to form cascode pair. Made of commercially available, discrete components, as hybrid circuit package or as monolithic integrated circuit.
Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.
Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.
High voltage spikes and electromagnetic interference suppressed. Power-supply circuit including two switching transistors easily modified to prevent simultaneous conduction by both transistors during switching intervals. Diode connected between collector of each transistor and driving circuit for opposite transistor suppresses driving signal to transistor being turned on until transistor being turned off ceases to carry current.
The Systems Integration, Test, and Evaluation (SITE) facility at NASA Lewis Research Center is presently configured as a satellite-switched time division multiple access (SS-TDMA) network simulator. The purpose of SITE is to demonstrate and evaluate advanced communication satellite technologies, presently embodied by POC components developed under NASA contracts in addition to other hardware, such as ground terminals, designed and built in-house at NASA Lewis. Each ground terminal in a satellite communications system will experience a different aspect of the satellite's motion due mainly to daily tidal effects and station keeping, hence a different duration and rate of variation in the range delay. As a result of this and other effects such as local oscillator instability, each ground terminal must constantly adjust its transmit burst timing so that data bursts from separate ground terminals arrive at the satellite in their assigned time slots, preventing overlap and keeping the system in synchronism. On the receiving end, ground terminals must synchronize their local clocks using reference transmissions received through the satellite link. A feature of the SITE facility is its capability to simulate the varying propagation delays and associated Doppler frequency shifts that the ground terminals in the network have to cope with. Delay is achieved by means of two NASA Lewis designed and built range delay simulator (RDS) systems, each independently controlled locally with front panel switches or remotely by an experiment control and monitor (EC/M) computer.