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Optical absorption bands are observed in the UV and IR proton bombarded potassium chloride at liquid nitrogen temperature. It is demonstrated that the absorption is due to trapped protons, and the largest UV band has been identified with the U center.
Basic techniques for microwave holography are considered, giving attention to ways of approaching the problem, swept frequency depth resolution, optical processing of swept frequency data, B-scans with optical processing, and the side-looking radar principle. Aspects of image formation with Vander Lugt filters are discussed together with holograms for Vander Lugt filter imaging. It is shown that a single basic scanning operation with microwaves can produce records for optical processing to provide any of the common readouts used in flaw detection.
Electron spin resonance measurements on variously treated zinc oxide powders reveal that the resonance signal at g = 1.956 is due to one electron trapped oxygen ion vacancy level, at a depth of (0.31 plus or minus 0.02) eV below the conduction band. The electrons at this level are delocalized. Schottky barrier influences nearly the entire bulk of the powder sample, and the bending of the bands caused by chemisorbed oxygen puts the vacancy level above the Fermi level almost through the entire bulk.
Interferometric methods may be considered to include all methods in which the time necessary for a signal to pass through a medium is determined on the basis of the period of oscillation of which the signal consists, while the distance is determined by noting the coincidence between (1) interference between the measured signal and its reflection and ultrasonic interference, or between another signal serving as a reference and electrical interference in the electronic part of the device. In general, all interferometric methods are relatively simple and permit a high degree of accuracy. Theoretically 48 different variations may be distinguished, about 30 of which are capable of practical application. For liquids, where transverse waves do not exist, the number of possible variations is limited to 40, assuming that absolute velocity measurement is desired.
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Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Laser-Scanning System pinpoints imperfections in solar cells. Entire solar panels containing large numbers of cells can be scanned. Although technique is similar to use of scanning electron microscope (SEM) to locate microscopic imperfections, it differs in that large areas may be examined, including entire solar panels, and it is not necessary to remove cover glass or encapsulants.
The orientation of twinning and other effects in silicon crystal ribbon growth is controlled by use of a starting seed crystal having a specific (110) crystallographic plane and (112) crystallographic growth direction.
The various steps involved in the chemical polishing and etching of silicon samples are described and the data on twins, grain boundaries and dislocation pits from fifty-three (53) samples are discussed.
The various steps involved in the chemical polishing and etching of silicon samples are described. Data on twins, dislocation pits, and grain boundaries from thirty-one (31) silicon sample are also discussed. A brief review of the changes made to upgrade the image analysis system is included.
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The Bond method was employed to measure the lattice parameter in an area of 0.4 mm in diameter of EFG Si-ribbons to an accuracy of + or - 0.00008 A. A Bond goniometer was built which included a goniostat with a special specimen holder to mount ribbons 1 m in length and 75 mm in width which could be rotated about two orthogonal axes, and a Leitz microscope for precision alignment of a particular area into the center of the goniostat and the small primary X-ray beam. The (321) planes were found to be parallel to the surface of the ribbons with an angular spread of about 15 deg. The poles of the (111) planes clustered about an angle of 25 deg away from the surface normal, again with a spread of 10 deg. The lattice parameter of a small piece of ribbon material was found to be a sub o = 5.43075 A. A maximum stress of 115 MPa was observed in a fractured ribbon which corresponded to the fracture stress of single crystals of Si.
One hundred and seventy four silicon sheet samples were analyzed for twin boundary density, dislocation pit density, and grain boundary length. Procedures were developed for the quantitative analysis of the twin boundary and dislocation pit densities using a QTM-720 Quantitative Image Analyzing system. The QTM-720 system was upgraded with the addition of a PDP 11/03 mini-computer with dual floppy disc drive, a digital equipment writer high speed printer, and a field-image feature interface module. Three versions of a computer program that controls the data acquisition and analysis on the QTM-720 were written. Procedures for the chemical polishing and etching were also developed.
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Proposal for removing impurities from silicon ribbon and sheet could be developed into an automated production-line process. New technique which combines ion-cluster bombardment, electron-gun heating, and plasma etching, could be key step in fabricating inexpensive solar-cell arrays. Silicon sheets and ribbons treated this way could have enhanced carrier lifetimes necessary for satisfactory solar-cell performance.
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