Protective Coatings for Spacecraft Polymers
Thin films of metal-oxide/polymer applied by ion-beam sputtering. Report describes experiments in development of coatings to protect polymers from bombardment by atomic oxygen.
Banks, Bruce A.↗
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Prototyping and implementing flight qualifiable semicustom CMOS P-well bulk integrated circuits in the JPL environment
Presently, there are many difficulties associated with implementing application specific custom or semi-custom (standard cell based) integrated circuits (ICs) into JPL flight projects. One of the primary difficulties is developing prototype semi-custom integrated circuits for use and evaluation in engineering prototype flight hardware. The prototype semi-custom ICs must be extremely cost-effective and yet still representative of flight qualifiable versions of the design. A second difficulty is encountered in the transport of the design from engineering prototype quality to flight quality. Normally, flight quality integrated circuits have stringent quality standards, must be radiation resistant and should consume minimal power. It is often not necessary or cost effective, however, to impose such stringent quality standards on engineering models developed for systems analysis in controlled lab environments. This article presents work originally initiated for ground based applications that also addresses these two problems. Furthermore, this article suggests a method that has been shown successful in prototyping flight quality semi-custom ICs through the Metal Oxide Semiconductor Implementation Service (MOSIS) program run by the University of Southern California's Information Sciences Institute. The method has been used successfully to design and fabricate through the MOSIS three different semi-custom prototype CMOS p-well chips. The three designs make use of the work presented and were designed consistent with design techniques and structures that are flight qualifiable, allowing one hour transfer of the design from engineering model status to flight qualifiable foundry-ready status through methods outlined in this article.
Olson, E. M.↗
Turbine Airfoil Deposition Models
Gas turbine failures associated with sea-salt ingestion and sulfur-containing fuel impurities have directed attention to alkali sulfate deposition and the associated hot corrosion of gas turbine (GT) blades under some GT operating conditions. These salt deposits form thin, molten films which undermine the protective metal oxide coating normally found on GT blades. The prediction of molten salt deposition, flow and oxide dissolution, and their effects on the lifetime of turbine blades are examined. Goals include rationalizing and helping to predict corrosion patterns on operational GT rotor blades and stators, and ultimately providing some of the tools required to design laboratory simulators and future corrosion-resistant high-performance engines. Necessary background developments are reviewed first, and then recent results and tentative conclusions are presented along with a brief account of the present research plans.
Rosner, D. E.↗
Preliminary test data using the MOS DRO with Si:In detector material
The initial testing performed on the Hughes Metal Oxide Semiconductor Direct Readout (MOS DRO) with a Si:In extrinsic infrared array is described. The testing to date was of a screening nature and the results are primarily qualitative rather than quantitative. At a later date the performance optimization phase will be initiated. An encouraging result is that this response is strongly dependent on the detector temperature, to the extent that thermal transients introduced during the chip readout will affect the performance. A responsivity of 1 A/W at 2.2 microns with a bias of 15 volts, which is well below what is optimum bias, was obtained.
Fowler, A. M.↗
Inversion layer MOS solar cells
Inversion layer (IL) Metal Oxide Semiconductor (MOS) solar cells were fabricated. The fabrication technique and problems are discussed. A plan for modeling IL cells is presented. Future work in this area is addressed.
Ho, Fat Duen↗
Development of a theoretical model for annealing of radiation damage in semiconductor devices
The radiation response of Metal Oxide Semiconductor (MOS) devices and Integrated Circuits (ICs) was studied theoretically. The case of short-term annealing and the rebound effect are modeled mathematically using the linear response theory.
Litovchenko, V.↗
Modelling short channel mosfets for use in VLSI
In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dimensional mathematical model of device dynamics was prepared, from which an accurate and computationally efficient drain current expression could be derived for subsequent parameter extraction. While a critical review revealed weaknesses in existing 1-D models (Pao-Sah, Pierret-Shields, Brews, and Van de Wiele), this new model in contrast was found to allow all the charge distributions to be continuous, to retain the inversion layer structure, and to include the contribution of current from the pinched-off part of the device. The model allows the source and drain to operate in different regimes. Numerical algorithms used for the evaluation of surface potentials in the various models are presented.
Klafter, Alex↗
A comparison of VLSI architecture of finite field multipliers using dual, normal or standard basis
Three different finite field multipliers are presented: (1) a dual basis multiplier due to Berlekamp; (2) a Massy-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features which apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for very large scale integration implementations can readily be ascertained.
Hsu, I. S.↗
High-surface-area, dual-function oxygen electrocatalysts for space power applications
The processes of hydration/dehydration and carbonation/decarbonation are investigated as an approach to provide higher surface area mixed metal oxides that are more active electrochemically. These materials are candidates for use as electrocatalysts and electrocatalyst supports for alkaline electrolyzers and fuel cells. For the case of the perovskite, LaCoO3 , higher surface areas were achieved with no change in structure and a more active oxygen electrocatalyst.
Ham, David O.↗
Tribology of selected ceramics at temperatures to 900 C
Results of fundamental and focused research on the tribological properties of ceramics are discussed. The basic friction and wear characteristics are given for ceramics of interest for use in gas turbine, adiabatic diesel, and Stirling engine applications. The importance of metal oxides in ceramic/metal sliding combinations is illustrated. The formulation and tribological additives are described. Friction and wear data are given for carbide and oxide-based composite coatings for temperatures to at least 900 C.
Sliney, H. E.↗
Measuring Critical Charges For Single-Event Upsets
Concept for determining susceptibility of integrated circuits to single-event upsets (SEU's) based on direct measurement of critical charge causing upset. Test circuit is modified version of standard complementary metal-oxide/semiconductor static cell. Contains six transistors, connected to form latch that retains state of cell set by input pulses. Makes possible to evaluate vulnerability to SEU during design and development of digital equipment.
Buehler, Martin G.↗
Empirical Modeling Of Single-Event Upset
Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.
Zoutendyk, John A.↗
New Mode For Single-Event Upsets
Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.
Zoutendyk, John A.↗
Atomic oxygen effects on metals
The effect of specimen geometry on the attack of metals by atomic oxygen is addressed. This is done by extending the coupled-currents approach in metal oxidation to spherical and cylindrical geometries. Kinetic laws are derived for the rates of oxidation of samples having these geometries. It is found that the burn-up time for spherical particles of a given diameter can be as much as a factor of 3 shorter than the time required to completely oxidize a planar sample of the same thickness.
Fromhold, Albert T.↗
Analysis of the performance of the space ultravacuum research facility in attached and free-flyer mode
The old concept of using the wake of a spacecraft to obtain an ultrahigh vacuum is revisited with a somewhat different emphasis. Since it is possible to configure a wake shield so that a surface of interest does not subtend any walls that could become contaminated, it appears that it should be possible to achieve a contamination-free, ultrahigh vacuum capability with infinite pumping speed even in the presence of high heat loads and moderate gas loads. With the new interest in developing thin films with precision controlled synthetic microstructures such as superlattices, mixed metal oxide high temperature superconductors, rare-earth magneto-optical devices, and nano-crystalline alloys, the ability to work with a variety of different materials without cross contamination should be of significance. This paper analyzes the performance of the conceptual design for a Space Ultravacuum Research Facility (SURF), both in a Shuttle-attached mode and as a free-flyer. It is shown that even in the Shuttle-attached mode, it should be possible to obtain vacuum levels equivalent to 10 to the -10 Torr with O and N2 as the primary constituents. This should be sufficient to demonstrate the feasibility of the concept, particularly the infinite pumping speed and virtual elimination of contamination aspects. As a free-flyer the SURF will be limited primarily by the gas load associated with the process being performed. For chemical beam epitaxy (CBE) it is shown that equivalent vacuum levels of 10 to the -14 Torr should be possible at 300 km.
Naumann, Robert J.↗
Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array
Two hybrid infrared (IR) detector arrays of antimony-doped silicon (Si:Sb) were produced and tested to evaluate their potential for use in low-background IR astronomy applications. The format of the arrays is 58 x 62 elements, with 76 micron-square pixels. A random-access, switched metal-oxide semiconductor field effect transistor (MOSFET) silicon multiplexer is used to read out the array elements. Reduced-background tests of signal, noise, and noise equivalent power were conducted over the temperature range 3.2 to 12 K. The arrays were found to have good sensitivity and good uniformity.
Orias, G.↗
Development of a unit cell for a Ge:Ga detector array
Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.
Source record↗
Adherent Al2O3 scales produced on undoped NiCrAl alloys
Repeated oxidation and polishing of high purity Ni-15Cr-13Al has dramatically changed its cyclic oxidation behavior from nonadherent to adherent. No apparent change in scale phase, morphology or interface structure occurred during this transition, dismissing any mechanism based on pegging, vacancy sink, or growth stress. The principle change that did occur was a reduction in the sulfur content from 10 ppmw to 3 ppmw after 25 cycles at 1120 C. These observations are used to support the model of Al2O3 scale adherence put forth by Smeggil et al. which claims that Al2O3 scale spallation occurs due to sulfur segregation and bond deterioration at the oxide-metal interface.
Smialek, James L.↗