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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 523 records · Page 29
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Optical and Electrical Properties of Reactively Sputtered TiN, ZrN, and HfN Thin Films

Thin films of titanium, zirconium, and hafnium nitride are prepared by DC magnetron reactive sputtering at room temperature on fused silica, optical glass, and silicon substrates. Deposition parameters are investigated in order to obtain stoichiometric films. The optical and electrical properties of the films as a function of nitrogen partial pressure are determined. The results show that an inverse correlation exists between the optical reflectance and the electrical resistivity of the films. Ellipsometer data for all three films show that their refractive index in the visible spectrum is decreased by increasing the film thickness while the extinction coefficient is unchanged. Thin films of TiN have the lowest room temperature resistivity relative to ZrN and HfN thin films.

Reactive↗
NASA NTRSDate not supplied

Differential Yields and Uncertainty Assessments for Electric Propulsion Plume Impingement Sputter Redeposition Contamination

Redeposition of sputtered erosion products from electric propulsion plume impingement is a contamination concern for spacecraft. Calculation of expected deposition quantities requires accurate characterization of the angular distribution of differential yields. An evaluation of available expressions is performed as well as a derivation of an alternate form that can better match experimental measurements through more general inclusion of anisotropic effects. The derivation is extended to the dependence of the total yield on incident angle. Considerations of the inherent uncertainty in both total and differential yields and accounting of subsequent margins for end applications are also discussed.

sputtering↗
DOE OSTI2025

Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN 2 Film Grown by Reactive Sputtering

The piezoelectric and ferroelectric applications of heterovalent ternary materials are not well explored. Epitaxial MgSiN 2 films are grown at 600 °C on (111)Pt//(001)Al 2 O 3 substrates by the reactive sputtering method using metallic Mg and Si under the N 2 atmosphere. Detailed X-ray diffraction measurements and transmission electron microscopy observations revealed that the epitaxially grown films on the substrates have a hexagonal wurtzite structure with c-axis out-of-plane orientation. The random occupation of this structure by Mg and Si differs from that of the previously reported structure in which these two cations periodically occupy the cationic sites. However, the lattice spacings closely approximate those that are previously reported, irrespective of the ordering, and they are almost comparable with those of (Al 0.8 Sc 0.2 )N. The wide bandgap of >5.0 eV in deposited MgSiN 2 is compatible with that of AlN and suggests durability against the application of strong external electric fields, possibly to induce polarization switching. In addition, MgSiN 2 is shown to have piezoelectric properties with an effective d 33 value of 2.3 pm V −1 for the first time. This work demonstrates the compositional expansion of hexagonal wurtzite to heterovalent ternary nitrides for novel piezoelectric materials, whose ferroelectricity is expected.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

FMR and Magnetic Studies of RF-Sputtered Mn-Zn Ferrite Thin Films

The Manganese–Zinc ferrite (MZF) thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at 10 mTorr of argon gas pressure. The FMR and magnetization measurement were carried out to understand magnetic properties of the as-deposited and annealed MZF films. The resonance field (H{sub r}) of the FMR spectra shifts towards higher magnetic field when angle between applied field and thin film plane is changed from 0 to 90° indicating the existence of uniaxial anisotropy in the film. Whereas, H{sub r} shifts towards lower magnetic field with decrease in temperature of the film. This is due to ferrimagnetic ordering in the films at low temperatures. The magnetization versus field (M-H) plots reveal the soft ferrimagnetic behavior of the films. The post-deposition annealing of the film leads to increase in crystallite size with more uniform film surface and dense columnar growth compared to the as-deposited film. The increase in magnetization and decreases in H{sub r}-values compared to that of as-deposited film are observed for annealed film. The optical band gap of the film is also found to increase with annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Quality Control Metrics to Assess MoS2 Sputtered Films for Tribological Applications

Abstract Pure molybdenum disulfide (MoS 2 ) solid lubricant coatings could attain densities comparable to doped films (and the associated benefits to wear rate and environmental stability) through manipulation of the microstructure via deposition parameters. Unfortunately, pure films can exhibit highly variable microstructures and mechanical properties due to processes that are not controlled during deposition (i.e., batch-to-batch variation). This work focuses on developing a relationship between density, hardness, friction, and wear for pure sputtered MoS 2 coatings. Results show that dense films ( ρ = 4.5 g/cm 3 ) exhibit a 100 × lower wear rate compared to porous coatings ( ρ = 3.04–3.55 g/cm 3 ). The tribological performance of high density pure MoS 2 coatings is shown to surpass that of established composite coatings, achieving a wear rate 2 × ( k = 5.74 × 10 –8 mm 3 /Nm) lower than composite MoS 2 /Sb 2 O 3 /Au in inert environments.

Babuska, Tomas F.↗
DOE OSTI2019

Magnetron-Sputtered Ni-Cr and Ti-Si Layers to Protect Ti-46Al-8Nb (at.%) Substrates Against Gas Absorption

Ni-Cr and Ti-Si layers were deposited by magnetron sputtering on Ti-46Al-8Nb (at.%) substrates to suppress penetration of gases, which brings about undesirable changes in mechanical properties. Alloy samples with and without surface protection were subjected to interrupted oxidation at elevated temperature (700 and 800 °C) for up to 300 h. Selected mechanical properties as well as adhesion of surface layers were examined in the as-received and oxidized state. Analytical techniques used to characterize surfaces and cross sections of the samples included scanning electron microscopy and light microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. Both investigated layers were sufficiently adherent and effective in hindering gas absorption at 700 °C; however, only Ni-Cr showed promising properties for higher-temperature applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Grid-assisted magnetron sputtering deposition of nitrogen graded TiN thin films

Titanium Nitride (TiN) films were obtained using the grid-assisted magnetron sputtering deposition technique on Al substrates in two conditions: under constant and variable nitrogen concentration along the thin solid film thickness. The formation of a film with variable N concentration (herein referred as graded film) was confirmed using energy filtered transmission electron microscopy, X-ray photoelectron spectroscopy and grazing incidence X-ray diffraction. The TiN thin films microstructures were also analysed using scanning and transmission electron microscopies (SEM and TEM). Finally, the viability of synthesizing TiN thin films with variable N concentration is herein proposed as an alternative method for tailoring the properties of such functional coating materials.

36 MATERIALS SCIENCE↗