Methods of measurement for semiconductor materials, process control, and devices Quarterly report, 1 Jul. - 30 Sep. 1970
NBS activities in developing methods of measurement for semiconductor materials, process control, and devices
Bullis, W. M.↗
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Results for “semiconductor”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A study of metal insulator semiconductor magnetoresistance, bulk, and surface properties of indium antimonide
Metal-insulator-magnetoresistance, bulk, and surface properties of indium antimonide compound semiconductor material
Grannemann, W. W.↗
Method of temperature compensating semiconductor strain gages Patent
Method for temperature compensating semiconductor gages by exposure to high energy radiation
Gross, C.↗
Bulk semiconductor materials for millimeter and submillimeter wave detection
Investigating electrical properties of bulk semiconductor materials for application as millimeter and submillimeter wave detectors
Eldumiati, I. I.↗
Radiation Effects Design Handbook. Section 1 - Semiconductor Diodes
Design handbook for steady state radiation effects on semiconductor diodes
Hamman, D. J.↗
Methods of measurement for semiconductor materials, process control, and devices Quarterly report, 1 Oct. - 31 Dec. 1970
Alpha and gamma radiation detectors and measuring instruments for semiconductor materials, process control, and devices
Bullis, W. M.↗
Reliability studies in semiconductor fabrication
Profiling procedures including computer program (OLS) for measuring junction depth in anodic oxidation - semiconductor fabrication reliability studies
Source record↗
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge
Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/GaP
Milnes, A. G.↗
Solution of the potential in a semiconductor with exponentially depth-dependent conductivity and application to four-point-probe measurements
Numerical analysis of potential in semiconductor produced by point current source and measurement of conductivity with four point probe
Franks, R. K.↗
Methods of measurement for semiconductor materials, process control, and devices
Tuning and photovoltaic methods and identification of test conditions for measurement of semiconductor materials, process control, and devices
Bullis, W. M.↗
A semiconductor-ferroelectric memory device
Monolithic optically written and electrically read semiconductor-ferroelectric memory device employing single crystal barium titanate
Sandstrom, D. B.↗
Heterojunctions involving II-VI compound semiconductors
Heterojunctions with II-VI compound semiconductors, evaluating electro-optical performance
Milnes, A. G.↗
Integrated circuits and semiconductor devices- Theory and application
Book on integrated circuits and semiconductor devices covering MOSFET, optoelectronic devices, silicon controlled rectifiers and thyristors
Burrous, C. N.↗
Interaction of electrons with impurities and the k equals approximately zero longitudinal optical phonon in metal-insulator-semiconductor tunnel junctions
Electrons interaction with impurities and longitudinal optical phonon in metal-insulator- semiconductor tunnel junctions
Compton, W. D.↗
Resonant Raman scattering by Raman-active infrared-inactive phonons in II-IV semiconductors
Mg compounds family of antifluorite structured small-gap semiconductors, investigating surface light scattering properties by Raman scattering techniques
Anastassakis, E.↗
Vapor-phase growth of several III-V compound semiconductors
Crystal growth of III-V compound semiconductors from vapor phase, studying deposition processes chemistry by mass spectrometry
Ban, V. S.↗
Metallization systems for semiconductor devices
Metals and systems for semiconductor devices metallization, evaluating conductivity, adhesion, contact resistance, deposition ease, electrochemical corrosion, reliability and stability
Terry, L. E.↗
Statistical mechanics of charged traps in an amorphous semiconductor
Coulomb interaction effect between charged traps in amorphous semiconductor, noting state density reduction at Fermi energy
Srinivasan, G.↗