SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.
High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage systems-on-a-chip.
A high voltage bandgap reference circuit has been designed and implemented in an SOI CMOS technology.
This paper documents the detailed, rigorous risk management process that the Cassini/Huygens program has implemented to ensure a successful SOI.
Fully-depleted silicon on insulator transitors were characterized at low temperatures for performance reliability.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
This paper presents a low-power VLSI neural processor that has been developed for high-speed vision processing based upon the frequency-sensitive self-organization (FSO) neural algorithm.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
High connectivity of artificial neural network chip-embodiments combined with currently emerging 3-dimensionally stacked multichip modules for real-time applications of target classification require a scrutiny for low power technology insertion.
Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.
The COBAND is a project of an experimental search for the cosmic background neutrino decay [1] – [9] . The existence of the cosmic background neutrino is predicted as a relic of the big bang in the theoretical cosmology. Since the neutrino is found to have mass generations and mixing between them, a heavier neutrino is possible to decay to a lighter neutrino with a far-infrared photon, even though its lifetime is expected to be much longer than the age of the universe [10] . However, neither the cosmic background neutrino nor the neutrino decay is yet established experimentally. Only a lower limit in the order of 10 12 years is given on the heaviest neutrino lifetime. We, thus, search for photons which come from the cosmic background neutrino decays. The photons from the cosmic background neutrino decays are expected to shape a spectrum of a unique signature with a sharp edge at a wavelength of around 50μm depending on the heaviest neutrino mass. To identify the signature against the overwhelming zodiacal emission foreground as well as the cosmic infrared background, the photodetectors are required to have an ability to measure the FIR spectrum around 50pm with sufficient precision. Thus, we aim at developing a photodetector with capability of FIR photon-by-photon spectrometry. We employ superconducting tunnel junction (STJ) sensors in combination with cryogenic amplifiers for signal readout to maximize the potential of STJ.