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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators
As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing
Sensitivity of warm-frontal processes to cloud-nucleating aerosol concentrations
An extratropical cyclone that crossed the United States on 9-11 April 2009 was successfully simulated at high resolution (3-km horizontal grid spacing) using the Colorado State University Regional Atmospheric Modeling System. The sensitivity of the associated warm front to increasing pollution levels was then explored by conducting the same experiment with three different background profiles of cloud-nucleating aerosol concentration. To the authors' knowledge, no study has examined the indirect effects of aerosols on warm fronts. The budgets of ice, cloud water, and rain in the simulation with the lowest aerosol concentrations were examined. The ice mass was found to be produced in equal amounts through vapor deposition and riming, and the melting of ice produced approximately 75% of the total rain. Conversion of cloud water to rain accounted for the other 25%. When cloud-nucleating aerosol concentrations were increased, significant changes were seen in the budget terms, but total precipitation remained relatively constant. Vapor deposition onto ice increased, but riming of cloud water decreased such that there was only a small change in the total ice production and hence there was no significant change in melting. These responses can be understood in terms of a buffering effect in which smaller cloud droplets in the mixed-phase region lead to both an enhanced vapor deposition and decreased riming efficiency with increasing aerosol concentrations. Overall, while large changes were seen in the microphysical structure of the frontal cloud, cloud-nucleating aerosols had little impact on the precipitation production of the warm front.
An Set-Free, All Digital Controlled Point-of-Load Regulator for Next Generation Power Systems: ADC-POL
This paper presents a digitally controlled programmable point-of-load regulator for next-generation power systems. A novel digital control scheme was designed to minimize single-event effect (SEE)-induced transient effects. By effectively programming the loop transmission, the POL can trade off transient response time with SET robustness. The IC works with 1 to 5.5 V input voltage, 1-4.5V regulated output voltage, high efficiency (peak efficiency at 94%) and power of up to 5 W. The design was fabricated in the AMI i2t100 0.7 mu m complimentary, metal-oxide semiconductor (CMOS) process and characterized with the Jet Propulsion Laboratory (JPL) pulsed laser system.
Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen
An accelerated total ionizing dose (TID) hardness assurance test for enhanced low dose rate sensitive (ELDRS) bipolar linear circuits, using high dose rate tests on parts that have been exposed to molecular hydrogen, has been proposed and demonstrated on several ELDRS part types. In this study several radiation-hardened "ELDRS-free" part types have been tested using this same approach to see if the test is overly conservative.
Radiation Hardening of a Wilkinson ADC for Distributed Motor Controller
No abstract available
Compendium of Test Results of Recent Single Event Effect Tests Conducted by the Jet Propulsion Laboratory
This paper reports heavy ion and proton-induced single event effect (SEE) results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.
Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications
A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.
Development of Advanced Low Emission Injectors and High-Bandwidth Fuel Flow Modulation Valves
Parker Hannifin Corporation developed the 3-Zone fuel nozzle for NASA's Environmentally Responsible Aviation Program to meet NASAs target of 75 LTO NOx reduction from CAEP6 regulation. The nozzle concept was envisioned as a drop-in replacement for currently used fuel nozzle stem, and is built up from laminates to provide energetic mixing suitable for lean direct injection mode at high combustor pressure. A high frequency fuel valve was also developed to provide fuel modulation for the pilot injector. Final testing result shows the LTO NOx level falling just shy of NASAs goal at 31.
Assessing and mitigating radiation effects in Xilinx FPGAs
The main purpose of this guideline is to document the current understanding of the effort and tradeoffs involved in using SRAM-based FPGAs with maximum achievable upset tolerance. This guideline summarizes the different testing strategies to be considered when assessing the SEE tolerance of SRAM-based FPGAs. For critical applications, in-beam testing of flight designs is strongly recommended in order to verify that the upset mitigation is working as well as the designer intended. At present, there are four manufacturers (Actel, Xilinx, Atmel, and Aeroflex) offering six FPGA types to the military market (i.e., some military spec screening and testing are specified) and four device types to the aerospace application market, which indicates that the manufacturers have added radiation parameter specifications. There is also a Honeywell and BAE Systems device that has been under development for several years, but it does not appear to be available yet; inquiries to Honeywell’s military/aerospace marketing arm on this product have been unanswered.
The impact of hydrogen contamination on the Total Dose Response of Linear Bipolar Microcircuits
Recent enhanced low dose rate sensitivity (ELDRS) investigations carried out by RLP Research, Crane, Arizona State University (ASU), and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar microcircuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunity to improve device performance. The objectives of this program are 1) to investigate and confirm the causal relationship between packaging recipes, hydrogen contamination, and total dose response of linear bipolar microcircuits; and 2) to develop a guideline that will take into account these effects at the radiation level for future NASA space missions. This program is geared to benefit all future NASA space missions using bipolar or BiCMOS linear devices.
Irradiation with molecular hydrogen as an accelerated total dose hardness assurance test method for bipolar linear circuits
High dose rate irradiation with hydrogen stress is proposed as an accelerated total dose test method for bipolar linear circuits. The method is validated across process and circuit technologies with five parts that are commonly used in space: a comparator (LM193 from National Semi-conductor), a voltage regulator (HSYE-117 RH from Intersil), a voltage reference (LT1019 from Linear Technology), a JFET input op amp (OP42 from Analog Devices) and a temperature transducer (AD590 from Analog Devices). The testing technique could rapidly establish an upper bound to the low dose rate response of parts in space and help with the part selection process in the design phase of a mission. The technology dependence and the viability of this technique are qualitatively explored using a physical model describing the dose rate response and the effect of hydrogen in bipolar technologies. The model uses four core processes: 1) space charge effects, 2) free electron/hole pair recombination, hole-hydrogen defect reactions in the oxides and 4) proton depassivation of dangling bonds at the Si/SiO2 interface. Radiation hardness assurance implications are discussed.
Understanding how molecular hydrogen impacts the total dose and dose rate response of linear bipolar circuits
Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Arizona State University (ASU) and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar micro-circuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunities to improve device performance. The general objectives of this program are to: 1. Determine the extent to which hydrogen contamination affects the total dose and dose rate response of linear bipolar circuits; 2. Develop a model that will enable the prediction of high dose rate (HDR) and low dose rate (LDR) response asymptotes and transition dose rates as a function of total dose, temperature, pressurized hydrogen, defect precursors, and other process dependent variables; 3. Explore the possibility of an accelerated hardness assurance method and possible hardening approaches; and 4. Extend the work to other technologies that have total dose response affected by hydrogen contamination.In this document, we xperimentally demonstrate with test transistors and circuits that hydrogen is correlated with ELDRS in bipolar linear circuits. We show that the amount of hydrogen determines: 1) the total dose response versus dose rate and 2) the transition dose rates between the high and low dose rate responses. The experimental results are supported with a steady state drift/diffusion analytical model as well as modeling calculations using COMSOL Multiphysics.
Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies
Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup
Qualification of emerging point-of-load regulators for next generation power systems
As demand for high-speed, on-board, digital-processing integrated circuits (ICs) on spacecraft increases (FPGAs and DSPs in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The objectives of this study are to first identify reliability issues or additional space reliability requirements that might not be addressed for commercial application of POL converters; second, to study the performances of existing or emerging POL converters (including linear regulators) within a practical two-stage power distribution architecture; and, finally, to identify points of failure at extreme temperatures (low and high) beyond specifications.
Single-event transient testing of low dropout PNP series linear voltage regulators
As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing