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NASA NTRS1972

Investigation of low-Z Coster-Kronig transitions by means of Auger and photoelectron spectroscopy

Experimental intensity ratios of Auger transitions for Co, Ni, Cu, and Zn as well as the relative L sub 2 and L sub 3 level widths of Cu and Zn, derived from their photoelectron spectra, are presented. Evidence is presented that a great deal of vacancy reorganization took place following photoionization and prior to Auger emission. These reorganizations are assumed to be due to Coster-Kronig transitions f sub 23. These results are compared with theoretical calculations and agree with predicted discontinuity at Z = 30 where f sub 23 transitions become energetically impossible.

Yin, L. I.↗

NASA NTRS1973

A new technique for Auger analysis of surface species subject to electron-induced desorption.

A method is presented to observe surface species subject to electron-induced desorption by Auger electron spectroscopy. The surface to be examined is moved under the electron beam at constant velocity, establishing a time-independent condition and eliminating the time response of the electron spectrometer as a limiting factor. The dependence of the Auger signal on the sample velocity, incident electron current, beam diameter, and desorption cross section is analyzed. It is shown that it is advantageous to analyze the moving sample with a high beam current, in contrast to the usual practice of using a low beam current to minimize desorption from a stationary sample. The method is illustrated by the analysis of a friction transfer film of PTFE, in which the fluorine is removed by electron-induced desorption. The method is relevant to surface studies in the field of lubrication and catalysis.

Pepper, S. V.↗

NASA NTRS1974

Auger electron spectroscopy of lunar samples

Auger spectroscopy has been employed to study the surface composition of a number of grains from the submillimeter lunar fines. Some of the problems associated with using this technique for lunar sample analyses are discussed in terms of relevant physical principles. The use of inert gas sputtering to obtain thickness profiles of surface films is shown to be important in this type of investigation. Four anorthite grains from the Apollo 17 fines have been examined for evidence of vapor-deposited surface coatings of micrometeorite impact origin. The results indicate that the thickness of surface deposits, if they exist at all, are orders of magnitude less than expected. Auger analysis of orange glass balls form the 74220,107 fines have established sulfur-rich surface coatings on the order of 30 A in thickness.

Grant, R. W.↗

NASA NTRS1976

Production of Ne Auger electrons by Ne/+/ bombardment of Mg and Al surfaces

A description is given of experiments which provide evidence for the production of an inner shell vacancy in the Ne by the asymmetric Ne-Mg and Ne-Al collision. In addition, autoionization states of neutral Ne have been observed. These states are to be distinguished from the more usual case in Auger electron spectroscopy of de-excitation of an ion with a core vacancy. The experiments involved the bombardment of Mg and Al surfaces with Ne(+) ions. A LEED-Auger system equipped with an ion gun and a four-grid retarding potential analyzer operated in the usual dN(E)/dE mode was used.

Ferrante, J.↗

NASA NTRS1977

Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions

An attempt is made to report Auger depth profiles produced in a UHF ion-milling Auger system for intentionally 'graded' Al(x)Ga(1-x)As-GaAs heterojunctions, 'abrupt' growth heterojunctions of the same material, and Au-Al(x)Ga(1-x)As interfaces. It is found that the interface widths of the 'abrupt' growth heterojunctions did not fluctuate greatly from an average value of 110 A and that 'graded' growth samples had interface widths of about 525 to 1500 A. The results for the Au-containing samples indicate that an oxide layer was present between the Au and the Al(x)Ga(1-x)As.

Garner, C. M.↗

NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗

NASA NTRS1979

Relativistic L -shell Auger and Coster-Kronig rates and fluorescence yields

Relativistic calculations of radiationless transition rates to L -subshell vacancy states in selected atoms with Z in the 70-96 range have been performed. The Auger and Coster-Kronig transition probabilities are calculated from perturbation theory, assuming frozen orbitals, in the Dirac-Hartree-Slater approach. Transition rates, fluorescence yields, and Coster-Kronig yields are compared with nonrelativistic theoretical results and with experiment. Relativity is found to affect the L -subshell Auger widths by (10-25)% and individual transition rates to certain j-j configurations by as much as 40% at Z = 80. The widths of L sub i vacancy states and the L sub 2 Coster-Kronig yields f33 from these relativistic calculations agree much better with experiment than earlier nonrelativistic theoretical values.

Chen, M. H.↗

NASA NTRS1980

Nitridation of silicon /111/ - Auger and LEED results

Clean silicon (111) (7x7) surfaces at up to 1050 C have been reacted with nitrogen ions and neutrals produced by a low energy ion gun. The LEED patterns observed are similar to those previously reported for reaction of silicon (111) (7x7) with NH3. The nitrogen KLL peak exhibits no shift or change in shape with nitride growth. At the same time the magnitude of the elemental silicon LVV peak at 92 eV decreases progressively as a new peak at 84 eV increases. The position of both peaks appears to be independent of the degree of nitridation. Since the Auger spectra are free of oxygen and other impurities, these features can be attributed only to silicon, nitrogen, and their reaction products. Characteristic features of the Auger spectra are related to LEED observations and to the growth of microcrystals of Si3N4.

Delord, J. F.↗

NASA NTRS1983

Techniques for the correction of topographical effects in scanning Auger electron microscopy

A number of ratioing methods for correcting Auger images and linescans for topographical contrast are tested using anisotropically etched silicon substrates covered with Au or Ag. Thirteen well-defined angles of incidence are present on each polyhedron produced on the Si by this etching. If N1 electrons are counted at the energy of an Auger peak and N2 are counted in the background above the peak, then N1, N1 - N2, (N1 - N2)/(N1 + N2) are measured and compared as methods of eliminating topographical contrast. The latter method gives the best compensation but can be further improved by using a measurement of the sample absorption current. Various other improvements are discussed.

Prutton, M.↗

NASA NTRS1982

Studies of liquid metal surfaces using Auger spectroscopy

The surface composition of liquid gallium-tin alloys is studied in an Auger electron spectrometer as a function of bulk composition and temperature. The sessile drop samples are cleaned by argon ion bombardment sputtering of the liquid. This technique produces surfaces that are entirely free of impurities within the sensitivity of the spectrometer and remain so for many days. Tin is found to be strongly adsorbed at the liquid-vacuum interface. Surface concentrations based on Auger measurements are found to be in reasonably good agreement with values calculated from surface tension measurements interpreted in terms of a monolayer depth distribution model for the adsorbed tin.

Hardy, S.↗

NASA NTRS1984

Study of the Auger line shape of polyethylene and diamond

The KVV Auger electron line shapes of carbon in polyethylene and diamond have been studied. The spectra were obtained in derivative form by electron beam excitation. They were treated by background subtraction, integration and deconvolution to produce the intrinsic Auger line shape. Electron energy loss spectra provided the response function in the deconvolution procedure. The line shape from polyethylene is compared with spectra from linear alkanes and with a previous spectrum of Kelber et al. Both spectra are compared with the self-convolution of their full valence band densities of states and of their p-projected densities. The experimental spectra could not be understood in terms of existing theories. This is so even when correlation effects are qualitatively taken into account account to the theories of Cini and Sawatzky and Lenselink.

Dayan, M.↗

NASA NTRS1985

Pointable Auger

Machine drills, crushes, and feeds coal - and seeks out extra-hard inclusions. Auger mounted on gimbal, located at its center of gravity for ease of maneuvering. Opposing hydraulic cylinders cooperate to point auger under control of microprocessor. Its diamond teeth break up coal seam, it crushes coal fed to it by mining machine jaws, and its screw action pushes crushed coal into slurry-forming chamber.

Lewis, E. V.↗

NASA NTRS1986

High-resolution Surface Analysis by Microarea Auger Spectroscopy: Computerization and Characterization

A custom scanning Auger electron microscope (SAM) capable of introducing a 3-5 keV electron beam of several nA into a 30 nm diameter sample area was fitted with a sample introduction system and was fully computerized to be used for materials science research. The method of multispectral Auger imaging was devised and implemented. The instrument was applied to various problems in materials science, including the study of the fiber/matrix interface in a SiC reinforced titanium alloy, the study of SiC whiskers in Al alloy 2124 (in cooperation with NASA-Langley), the study of NiCrAl superalloys (in collaboration with NASA-Lewis), the study of zircalloy specimens (in collaboration with Stanford University), and the microstructure of sintered SiC specimens (in collaboration with NASA-Lewis). The report contains a number of manuscripts submitted for publication on these subjects.

Browning, R.↗

NASA NTRS1985

Some strategies for quantitative scanning Auger electron microscopy

The general applicability of power law forms of the background in electron spectra is pointed out and exploited for background removal from under Auger peaks. This form of B(E) is found to be extremely sensitive to instrumental alignment and to fault-free construction - an observation which can be used to set up analyser configurations in an accurate way. Also, differences between N(E) and B(E) can be used to derive a spectrometer transmission function T(E). The questions of information density in an energy-analysing spatially-resolving instrument are addressed after reliable instrumental characterization has been established. Strategies involving ratio histograms, showing the population distribution of the ratio of a pair of Auger peak heights, composition scatter diagrams and windowed imaging are discussed and illustrated.

Browning, R.↗

NASA NTRS1988

Auger analysis of a fiber/matrix interface in a ceramic matrix composite

Auger electron spectroscopy (AES) depth profiling was used to characterize the fiber/matrix interface of an SiC fiber, reaction bonded Si3N4 matrix composite. Depth profiles of the as received double coated fiber revealed concentration oscillations which disappeared after annealing the fiber in the environment used to fabricate the composite. After the composite was fractured, the Auger depth profiles showed that failure occurred in neither the Beta-SiC fiber body nor in the Si3N4 matrix but, concurrently, at the fiber coating/matrix interface and within the fiber coating itself.

Honecy, Frank S.↗

NASA NTRS1987

Multielement mapping of alpha-SiC by scanning Auger microscopy

Fine second-phase particles, numerous in sintered alpha-SiC, were analyzed by scanning Auger microscopy and conventional techniques. The Auger analysis utilized computer-controlled data acquisition, multielement correlation diagrams, and a high spatial resolution of 100 nm. This procedure enabled construction of false color maps and the detection of fine compositional details within these particles. Carbon, silicon oxide, and boron-rich particles (qualitatively as BN or B4C) predominated. The BN particles, sometimes having a carbon core, are believed to result from reaction between B4C additives and nitrogen sintering atmospheres.

Browning, Ray↗

NASA NTRS1988

Auger and ESCA analysis

X-ray photoelectron spectroscopy (XPS or ESCA) and Auger electron spectroscopy (AES) techniques are discussed. The XPS instrument is a Perkin-Elmer 5400 system which provides both elemental and chemical state information without restriction on the type of material that can be analyzed. The AES instrument is a Kratos Analytical XSAM 800 system. AES uses a beam of high energy electrons as a surface probe. Following electronic rearrangements within excited atoms by this probe, Auger electrons characteristic of each element present are emitted from the sample. Specific examples of analytic techniques and results are presented.

Gregory, John C.↗

NASA NTRS1989

A study of native oxides of beta-SiC using Auger electron spectroscopy

Thermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.

Chaudhry, M. Iqbal↗