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NASA NTRS2003

Creep Resistance of ZrO2 Ceramic Improved by the Addition of a Small Amount of Er2O3

Zirconia (ZrO2) has great technological importance in structural, electrical, and chemical applications. It is the crucial component for state-of-the art thermal barrier coatings and an enabling component as a solid electrolyte for solid-oxide fuel cell systems. Pure ZrO2 is of limited use for industrial applications because of the phase transformations that occur. Upon the addition of stabilizers, cubic (c-ZrO2) and tetragonal (t-ZrO2) forms can be preserved. It is the stabilized and partially stabilized forms of zirconia that function as thermal barrier coatings, solid electrolytes, and oxygen sensors and that have numerous applications in the electrochemical industry. The cubic form of ZrO2 is typically stabilized through Y2O3 additions. However, Y2O3-stabilized zirconia is susceptible to deformation at high temperatures (greater than 900 C) because of the large number of slip systems and the high oxygen diffusion rates, which result in high creep rates at high temperatures. Successful use of ZrO2 at high temperatures requires that new dopant additives be found that will retain or enhance the desirable properties of cubic ZrO2 and yet produce a material with lower creep rates. At the NASA Glenn Research Center, erbium oxide (Er2O3) was identified as a promising dopant for improving the creep resistance of. ZrO2. The selection of Er2O3 was based on the strong interactions of point defects and dislocations. Single crystals of 5 mol% Er2O3- doped ZrO2 rods (4 mm in diameter) and monofilaments (200 to 300 mm in diameter and 30 cm long) were grown using the laser-heated float zone technique, and their creep behavior was measured as a function of temperature. The addition of 5 mol% Er2O3 to single-crystal ZrO2 improved its creep resistance at high temperatures by 2 to 3 orders of magnitude over state-of-the-art Y2O3-doped crystals. Detailed microstructural characterization of ZrO2-Er2O3 single crystals has identified new mechanisms for improving the creep resistance of this class of materials. Adding Er2O3 to ZrO2 results in microstructure of stable and metastable tetragonal precipitates that with thermal treatment evolve to a tweed structure of nanosize tetragonal lamellae. The superior high-temperature creep resistance of Er2O3-doped ZrO2 is attributed to nanoscale precipitation hardening. Doping with Er2O3 will significantly increase the upper-use temperature limit of ZrO2. Potential applications include using Er2O3-doped ZrO2 as a high-temperature fiber for structural applications and adding Er2O3 to reduce the sintering rates of ZrO2 thermal barrier coatings. This work was conducted at Dpto. de F sica de la Materia Condensada, Universidad de Sevilla, Spain, and at NASA Glenn.

Martinez-Fernandez, Julian↗
NASA NTRS1985

High purith low defect FZ silicon

The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

Kimura, H.↗
NASA NTRS1986

The tensile and fatigue deformation structures in a single crystal Ni-base superalloy

Dislocation structures produced in Rene N4 crystals of various orientations deformed in tension and low cycle fatigue (LCF) at 760 and 980 degrees C were examined in order to elucidate the observed differences in stress-strain behavior. Specimens tensile tested at 760 degrees C displayed significant crystallographic orientation dependences in mechanical response but comparable inhomogeneous dislocation structures. LCF specimens of various orientations had comparable cyclic stress-strain curves and generally similar somewhat more homogeneous dislocation structures. Tensile specimens at the higher temperature had comparable mechanical response and corresponding similar quite homogeneous dislocation structures with gamma' faulting; and LCF specimens had orientation-dependent mechanical response but comparable homogeneous loose dislocation networks.

Gabb, T. P.↗
NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
NASA NTRS2003

Observations of Glide and Decomposition of a<101> Dislocations at High Temperatures in Ni-Al Single Crystals Deformed along the Hard Orientation

Ni-44at.% Al and Ni-50at.% single crystals were tested in compression in the hard (001) orientations. The dislocation processes and deformation behavior were studied as a function of temperature, strain and strain rate. A slip transition in NiAl occurs from alpha(111) slip to non-alphaaaaaaaaaaa9111) slip at intermediate temperatures. In Ni-50at.% Al single crystal, only alpha(010) dislocations are observed above the slip transition temperature. In contrast, alpha(101)(101) glide has been observed to control deformation beyond the slip transition temperature in Ni-44at.%Al. alpha(101) dislocations are observed primarily along both (111) directions in the glide plane. High-resolution transmission electron microscopy observations show that the core of the alpha(101) dislocations along these directions is decomposed into two alpha(010) dislocations, separated by a distance of approximately 2nm. The temperature window of stability for these alpha(101) dislocations depends upon the strain rate. At a strain rate of 1.4 x 10(exp -4)/s, lpha(101) dislocations are observed between 800 and 1000K. Complete decomposition of a alpha(101) dislocations into alpha(010) dislocations occurs beyond 1000K, leading to alpha(010) climb as the deformation mode at higher temperature. At lower strain rates, decomposition of a alpha(101) dislocations has been observed to occur along the edge orientation at temperatures below 1000K. Embedded-atom method calculations and experimental results indicate that alpha(101) dislocation have a large Peieris stress at low temperature. Based on the present microstructural observations and a survey of the literature with respect to vacancy content and diffusion in NiAl, a model is proposed for alpha(101)(101) glide in Ni-44at.%Al, and for the observed yield strength versus temperature behavior of Ni-Al alloys at intermediate and high temperatures.

Srinivasan, R.↗
NASA NTRS2003

Models of Mass Transport During Microgravity Crystal Growth of Alloyed Semiconductors in a Magnetic Field

Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices. Currently, high-quality crystals of GeSi and of II-VI alloys can be grown by epitaxial processes, but the time required to grow a certain amount of single crystal is roughly 1,000 times longer than the time required for Bridgman growth from a melt. Recent rapid advances in optoelectronics have led to a great demand for more and larger crystals with fewer dislocations and other microdefects and with more uniform and controllable compositions. Currently, alloyed crystals grown by bulk methods have unacceptable levels of segregation in the composition of the crystal. Alloyed crystals are being grown by the Bridgman process in space in order to develop successful bulk-growth methods, with the hope that the technology will be equally successful on earth. Unfortunately some crystals grown in space still have unacceptable segregation, for example, due to residual accelerations. The application of a weak magnetic field during crystal growth in space may eliminate the undesirable segregation. Understanding and improving the bulk growth of alloyed semiconductors in microgravity is critically important. The purpose of this grant to to develop models of the unsteady species transport during the bulk growth of alloyed semiconductor crystals in the presence of a magnetic field in microgravity. The research supports experiments being conducted in the High Magnetic Field Solidification Facility at Marshall Space Flight Center (MSFC) and future experiments on the International Space Station.

Ma, Nancy↗
NASA NTRS1984

Oscillating-Crucible Technique for Silicon Growth

Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.

Daud, T.↗
NASA NTRS2014

Data Processing and Experimental Design for Micrometeorite Impacts in Small Bodies

Comets and asteroids have been altered from their original "pristine" state by impacts occurring throughout their 4.5 billion year lives: [1]. Proof of shock deformation has been detected in the crystal structure of several Stardust samples from Comet Wild 2 [2, 3]. Analyses indicated that the planar dislocations in the crystal structure of the minerals had been imparted by impacts sustained during their lives, and not due to the aerogel capture process. Distortions to crystal structure also affect the ideal absorption spectra in the infrared, and [4], thus providing indirect evidence of its impact history and a means of remotely investigating the impact history of small bodies through comparing laboratory spectra with spectra observed by telescopes or spacecraft. -The effects of impacts propagating shock waves through minerals were investigated through laboratory impact experiments. Utilizing NASA Johnson Space Center's Experimental Impact Laboratory, projectiles were fired from the vertical gun at velocities ranging from 2.0 to 2.8 km/sec, projected impact velocities between Kuiper Belt Objects. Two types of projectiles were used, including spherical alumina ceramic, whose density mimics that of rock, and cylinders made from the same material that they impacted. The target materials chosen for testing included: OLIVINES forsterite (Mg2SiO4) and fayalite, Fe2SiO4); PYROXENES enstatite (Mg2Si2O6) and diopside (MgCaSi2O6); and CARBONATES magnesite (MgCO3) and siderite (FeCO3). Targets were impacted at either 25 C or cooled to -20 C to examine the effects of temperature, if any, on lattice distortions during the shock propagation. As comets and asteroids can undergo a wide range of temperatures in their orbital lifetimes, the effect of temperature on the equation of state of minerals being shocked needs to be examined for interpreting the results of these experiments. The porosity of the target mineral is varied by either grinding it into a powder/granular texture or as whole mineral rocks to investigate the differences in shock propagation when voids are present. By varying velocity, ambient temperature, and porosity, we can investigate different variables affecting impacts in the solar system. -Data indicates that there is a non-linear relationship between peak shock pressure and the variation in infrared spectral absorbances by the distorted crystal structure. The maximum variability occurs around 37 GPa in enstatite and forsterite. The particle size distribution of the impacted material similarly changes with velocity/peak shock pressure. -The experiments described above are designed to measure the near- to mid-IR effects from these changes to the mineral structure. See Lederer et al., this meeting for additional experimental results.

Jensen, E.↗
NASA NTRS1982

Bridgman-type apparatus for the study of growth-property relationships - Arsenic vapor pressure-GaAs property relationship

A precision Bridgman-type apparatus is described which was designed and constructed for the investigation of relationships between crystal growth parameters and the properties of GaAs crystals. Several key features of the system are highlighted, such as the use of a heat pipe for precise arsenic vapor pressure control and seeding without the presence of a viewing window. Pertinent growth parameters, such as arsenic source temperature, thermal gradients in the growing crystal and in the melt, and the macroscopic growth velocity can be independently controlled. During operation, thermal stability better than + or - 0.02 C is realized; thermal gradients can be varied up to 30 C/cm in the crystal region, and up to 20 C/cm in the melt region; the macroscopic growth velocity can be varied from 50 microns/hr to 6.0 cm/hr. It was found that the density of dislocations depends critically on As partial pressure; and essentially dislocation-free, undoped, crystals were grown under As pressure precisely controlled by an As source maintained at 617 C. The free carrier concentration varied with As pressure variations. This variation in free carrier concentration was found to be associated with variations in the compensation ratio rather than with standard segregation phenomena.

Parsey, J. M.↗
NASA NTRS1998

New AFM Techniques for Investigating Molecular Growth Mechanisms of Protein Crystals

Atomic Force Microscopy (AFM) has emerged as a powerful technique for investigating protein crystal growth. Earlier AFM studies were among the first to demonstrate that these crystals grew by dislocation and 2D nucleation growth mechanisms [1]. These investigations were restricted to the micron range where only surface features, such as dislocation hillocks and 2D islands are visible. Most AFM instruments can scan at higher resolutions and have the potential to resolve individual protein molecules at nanometer ranges. Such scans are essential for determining the molecular packing arrangements on crystal faces and for probing the growth process at the molecular level. However, at this resolution the AFM tip influences the image produced, with the resulting image being a convolution of the tip shape and the surface morphology [2]. In most studies this problem is resolved by deconvoluting the image to obtain the true surface morphology. Although deconvolution routines work reasonably well for simple one- dimensional shapes, for complex surfaces this approach does not produce accurate results. In this study we devised a new approach which takes advantage of the precise molecular order of crystal surfaces, combined with the knowledge of individual molecular shapes from the crystallographic data of the protein and the AFM tip shape. This information is used to construct expected theoretical AFM images by convoluting the tip shape with the constructed crystal surface shape for a given surface packing arrangement. By comparing the images from actual AFM scans with the constructed ones for different possible surface packing arrangements, the correct packing arrangement can be conclusively determined. This approach was used in this study to determine the correct one from two possible packing arrangements on (I 10) faces of tetragonal lysozyme crystals. Another novel AFM technique was also devised to measure the dimension of individual growth units of the crystal faces. Measuring these units was not attempted before and most studies have assumed that the growth unit consisted of individual protein molecules. The linescan mode of AFM instruments allows the crystal surface to be scanned along a single line. By scanning across a growth step an image showing the motion of the step is obtained. Normally such an image shows a straight line for continuous and constant step velocity. In this study by increasing the scan rate and by decreasing the step velocity (by decreasing the supersaturation), we were able to capture images of individual growth events, shown by jump discontinuities in the step line. By suitable integration of the image the growth unit dimension in the scanned direction can be obtained. Since multiple units can be involved in the growth process it is necessary to collect a statistically relevant sample before drawing conclusions about the growth mechanism. This technique was successfully employed to obtain the dimensions of growth units for the (110) face, showing that they consisted of various aggregates corresponding to the 43 helices in the crystal structure.

Li, Huayu↗
NASA NTRS1988

Microstructural evolution on crystallizing the glassy phase in a 6 weight percent Y2O3-Si3N4 ceramic

X-ray diffraction and analytical electron microscopy have been used to study the crystallization of the grain-boundary glass in a 6 wt pct Y2O3-Si3N4 ceramic. Upon crystallization, high densities of dislocations formed in the Si3N4 grains and remained after 5 h at temperature. However, prolonged holds at the crystallization temperature effectively annealed out the dislocations. Other features present in the microstructure are characterized.

Lee, W. E.↗