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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Diffusion length damage coefficient and annealing studies in proton-irradiated InP

We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

Hakimzadeh, Roshanak↗
NASA NTRS1971

Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells

Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.

Berman, P. A.↗
NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗
NASA NTRS1981

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Ho, C. T.↗
NASA NTRS1979

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗
NASA NTRS1978

Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: A theoretical analysis

A standard procedure for the determination of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P-N junction and measuring the resultant short circuit current I sub sc as a function of beam position. A detailed analysis of the I sub sc originating from this configuration is presented. It is found that, for a point source excitation, the I sub sc depends very simply on x, the variable distance between the surface and the junction edge. The expression for the I sub sc of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta sub 1, is smaller than 10 deg.

Vonroos, O.↗
NASA NTRS1982

Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap.

Iles, P. A.↗
NASA NTRS1980

Evaluation and optimization of silicon sheet solar cells

This paper describes the results and procedures to evaluate and improve the efficiency of solar cells made from various unconventional silicon sheets. The performance parameters included photovoltaic characteristics, spectral response, dark I-V characteristics, and diffusion length. The evaluation techniques used provided accurate and reliable information on sheet performance, and self-consistent results were obtained from the various measurement techniques used. Minority carrier diffusion length (L) was shown to be the ultimate limiting factor for the sheet cell performance (efficiency) and other back-up measurements confirmed this L-dependence. Limited efforts were made to identify defects which influence cell performance, and to use some improved process methods to increase cell efficiency.

Yoo, H.↗
NASA NTRS1977

High efficiency GaAs solar cells

The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.

Walker, G. H.↗
NASA NTRS1982

Advances in large-diameter liquid encapsulated Czochralski GaAs

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

Chen, R. T.↗
NASA NTRS1993

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Jain, R. K.↗
NASA NTRS1993

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗
NASA NTRS1980

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Vonross, O.↗
NASA NTRS1974

Methods of improving the efficiency of photovoltaic cells

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Loferski, J. J.↗
NASA NTRS1963

The solar cells and their mounting

Objectives in development of the solar plant for the Telstar spacecraft were to provide a power source which would withstand launching stresses and the expected space environment, with optimum end-of-life performance. Radiation damage to the silicon solar cells is the primary factor limiting their useful life; the effect of energetic protons or electrons is the generation of recombination centers in the silicon which reduce the minority-carrier diffusion length and therefore the long-wave response of the cell. The spacecraft solar cells use the n-on-p structure, in preference to conventional p-on-n structure, to obtain a factor of 3 to 10 increased life expectancy. Response to light in the 0.4 to 0.7 micron range is enhanced by using a thin n-layer (about 0.5 micron) and an antireflection coating with minimum reflectance at 0.55 micron wavelength. Early estimates of electron and proton fluxes in the satellite orbit showed that even the best cells would not give sufficient life without radiation shielding. Therefore the cells are protected against electrons of energy up to 1 Mev by 0.3 gm/sq. cm sapphire cover plates. The cell mountings are designed to withstand peak vibration stresses of 200 g and repeated temperature cycles from +65°C to −100°C. The 3600-cell solar power plant is composed of 300 twelve-cell groups of 1 cm × 2 cm cells, yielding a nominal initial power of 14 watts at 28 volts for any spin-axis orientation relative to the sun. Telemetry information on performance of the solar plant indicates degradation of the shielded solar cells equal to that measured in the laboratory on unshielded cells with a 1-Mev normal incidence flux of 6 × 10^(12) electrons/(sq. cm day). From this comparison it is estimated that the plant will degrade to 68 per cent of its initial output after two years in orbit.

SPACECRAFT POWER SUPPLY↗