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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

The effect of N2/+/ recombination on the aeronomic determination of the charge exchange rate coefficient of O/+//2D/ with N2

The Atmosphere Explorer (AE) data are reexamined in the light of new laboratory measurements of the N2(+) recombination rate coefficient alpha. The new measurements support earlier measurements which yielded values of alpha significantly lower than the AE values. It is found that the values for alpha determined from the satellite data can be reconciled with the laboratory measurements, if the charge exchange rate coefficient for O(+)(2D) with N2 is less than one-quarter of that derived in the laboratory by Rutherford and Vroom (1971).

Torr, D. G.↗
NASA NTRS1986

Mass and energy balance of the cold Io torus

A new model of the cold Io torus is described. Ions and energy are injected into the system by independent processes so that the mass balance is isolated from the energy balance. The primary source of energy is local ionization and acceleration of hot pickup ions resulting from charge exchange between thermal ions and an extended cloud of Iogenic sulfur and oxygen atoms. The primary energy loss mechanism of the plasma is collisionally excited line emission at optical wavelengths. The primary ion source is radial diffusion inward from the hot torus on a time scale of 140-710 days. The primary ion loss mechanism is a novel two-step enhanced recombination mechanism involving charge exchange between thermal ions and an extended cloud of neutral SO2 molecules, followed by rapid dissociative recombination of the resultant molecular ion. The model provides a self-consistent solution which reconciles a number of diverse observations with known physical processes.

Moreno, M. A.↗
NASA NTRS1978

Radiative recombination of complex ions

The rates of radiative capture by atomic systems is computed for the first four ionization stages of the abundant elements C, N, O, Ne, Mg, Si, S, and Ar. A simple prescription is given for calculating the rates for systems in higher ionization stages. Results for capture to atomic helium are also given. In the general case, recent calculations of photoionization cross sections have been used to compute capture rates to levels of the ground-state configuration of the recombined species. Captures to other levels of the valence shell and to the higher shells are evaluated using hydrogenic formulae but with a correction factor which takes into account the nonhydrogenic nature of these states. This correction factor is due to the incomplete shielding by the inner electrons and represents essentially an effective charge for the recombining ion; it is determined semiempirically from an appropriate weighting of values derived from the observed level structure for each species. In some cases, for the capture to neutral atomic systems, its application increases the resulting computed recombination rate by a significant amount (about 50%). Computed recombination rates are tabulated for the four ionization stages at an electron temperature of 10,000 K and for the first stage at 100 K. A convenient procedure is outlined for evaluating the rates at other temperatures in the general neighborhood of these values.

Gould, R. J.↗
NASA NTRS1998

Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

Parks, Joseph W., Jr.↗
NASA NTRS1976

Enhancement of dielectronic recombination by plasma electric microfields

A description is presented of an application of techniques from Stark-broadening theory considered by Griem (1974) to the computation of dielectronic recombination rated for multiply charged Fe ions under the influence of plasma electric microfields. Attention is given to a dielectronic recombination process for which the effects of surrounding charged particles have been found to be important at surprisingly low densities.

Jacobs, V. L.↗
NASA NTRS2001

Novel High Efficient Organic Photovoltaic Materials

In man's mission to the outer space or a remote site, the most abundant, renewable, nonpolluting, and unlimited external energy source is light. Photovoltaic (PV) materials can convert light into electrical power. In order to generate appreciable electrical power in space or on the Earth, it is necessary to collect sunlight from large areas due to the low density of sunlight, and this would be very costly using current commercially available inorganic solar cells. Future organic or polymer based solar cells seemed very attractive due to several reasons. These include lightweight, flexible shape, ultra-fast optoelectronic response time (this also makes organic PV materials attractive for developing ultra-fast photo detectors), tunability of energy band-gaps via molecular design, versatile materials synthesis and device fabrication schemes, and much lower cost on large-scale industrial production. It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks will facilitate the charge separation and migration due to improved electronic ultrastructure and morphology in comparison to current polymer composite photovoltaic system. This presentation will describe our recent progress in the design, synthesis and characterization of a novel donor-bridge-acceptor block copolymer system for potential high-efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene, the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene, and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes the holes, the acceptor block stabilizes the electrons. The bridge block is designed to hinder the electron-hole recombination. Thus, improved charge separation is expected. In addition, charge migration will also be facilitated due to the expected nano-phase separated and highly ordered block copolymer ultrastructural. The combination of all these factors will result in significant overall enhancement of photovoltaic power conversion efficiency.

Sun, Sam↗
NASA NTRS2002

Design and Synthesis of Novel Block Copolymers for Efficient Opto-Electronic Applications

It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks may facilitate the charge carrier separation and migration in organic photovoltaic devices due to improved morphology in comparison to polymer blend system. This paper presents preliminary data describing the design and synthesis of a novel Donor-Bridge-Acceptor (D-B-A) block copolymer system for potential high efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene (PPV), the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene (PPV), and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes and facilitates the transport of the holes, the acceptor block stabilizes and facilitates the transport of the electrons, the bridge block is designed to hinder the probability of electron-hole recombination. Thus, improved charge separation and stability are expected with this system. In addition, charge migration toward electrodes may also be facilitated due to the potential nano-phase separated and highly ordered block copolymer ultra-structure.

Sun, Sam-Shajing↗
NASA NTRS1983

Pulse radiolysis of epoxy-based matrix materials

Electron beam pulse radiolysis (600 KeV, 3 nsec) experiments have been carried out on epoxy-based matrix materials. Time and wavelength resolved emission and transient absorption techniques as well as ESR studies have been utilized to identify and monitor short lived reactive intermediates resulting from energetic electron impact. An energy deactivation model based on the results of this work has been developed. Recombination of primary charged species is found to be fast, resulting in the formation of longer lived excited electronic states and radicals which control the subsequent energy deactivation.

Coulter, D. R.↗
NASA NTRS1987

Corotation lag limit on mass-loss rate from Io

Considering rapid escape of H2O from Io during an early hot evolutionary epoch, an H2O plasma torus is constructed by balancing dissociation and ionization products against centrifugally driven diffusion, including for the first time the effects of corotation lag resulting from mass loading. Two fundamental limits are found as the mass injection rate increases: (1) an 'ignition' limit of 1.1 x 10 to the 6th kg/s, beyond which the torus cannot ionize itself and photoionization dominates; and (2) the ultimate mass loading limit of 1.3 x 10 to the 7th kg/s, which occurs when neutrals newly created by charge exchange and recombination cannot leave the torus, thereby bringing magnetospherically driven transport to a halt. Connecting this limit with the variations of Io's temperature in its early evolution epoch gives an estimate of the upper limit on the total mass loss from Io, about 3.0 x 10 to the 20th kg (for high-opacity nebula) and about 8.9 x 10 to the 20th kg (for low-opacity nebula). These limits correspond to eroding 8 km and 22 km of H2O from the surface. It is concluded that compared to the other Galilean satellites, Io was created basically dry.

Huang, T. S.↗
NASA NTRS1987

Elementary process and meteor train spectra

Mechanisms of excitation of individual spectral line radiation were studied experimentally and theoretically and it was demonstrated that such processes as oxidation, resonant charge exchange, dissociative recombination and others play an important part in the chemistry of excited particles. The foundation was laid toward simulating the elementary processes of meteor physics. Having a number of advantages and possibilities, this method is sure to find a wide use in the future.

Ovezgeldyev, O. G.↗
NASA NTRS1994

Neutral hydrogen in the solar wind acceleration region

Observation of solar Ly alpha radiation scattered by coronal neutral hydrogen atoms can be used to investigate the acceleration region of the solar wind. In this paper we focus on the use of these observations to study Alfven waves, which can accelerate the solar wind plasma to flow speeds observed in high-speed streams if their amplitude at the coronal base is 20 km/s or larger. The wave amplitude is then larger than the proton thermal speed in the outer corona, so that the mean proton speed (averaged over a wave period) is significantly larger than the proton thermal speed. For low-frequency wave the hydrogen atoms follow the proton motion in the waves, while for higher frequencies the protons move relative to the neutrals. Nevertheless, in the higher frequency case, the rates for charge exchange and recombination are high enough to broaden the velocity distribution function of neutral hydrogen. Both the wave motion of the hydrogen atoms in low-frequency Alfven waves and the 'heating' by higher frequency waves lead to a broadening of the scattered solar Ly alpha line. For coronal base amplitues of 20 km/s, the line broadening increases with heliocentric distance beyond 4-5 solar radii.

Olsen, Espen Lyngdal↗
NASA NTRS2005

Emission Process I

Important processes in X-ray plasmas are: 1. Ionization: Electron/proton collisions. Electron/proton (photoionization). innershell ionization. 2. Recombination: Radiative. Dielectronic. Charge exchange. 3. Excitation/Decay: Electron/proton collisions. Photoexcitation. Radiative decay.

Smith, Randall K.↗
NASA NTRS2008

Dead Zone Accretion Flows in Protostellar Disks

Planets form inside protostellar disks in a dead zone where the electrical resistivity of the gas is too high for magnetic forces to drive turbulence. We show that much of the dead zone nevertheless is active and flows toward the star while smooth, large-scale magnetic fields transfer the orbital angular momentum radially outward. Stellar X-ray and radionuclide ionization sustain a weak coupling of the dead zone gas to the magnetic fields, despite the rapid recombination of free charges on dust grains. Net radial magnetic fields are generated in the magnetorotational turbulence in the electrically conducting top and bottom surface layers of the disk, and reach the midplane by ohmic diffusion. A toroidal component to the fields is produced near the midplane by the orbital shear. The process is similar to the magnetization of the solar tachocline. The result is a laminar, magnetically driven accretion flow in the region where the planets form.

solar system↗
NASA NTRS2013

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1987

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗