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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
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DOE OSTI2021

A Foreshock Model for Interstellar Shocks of Solar Origin: Voyager 1 and 2 Observations

The Voyager 1 (V1) and Voyager 2 (V2) spacecraft were launched in 1977 on a mission to explore the outer planets and reach the heliopause, the boundary between the hot solar plasma and the relatively cool interstellar plasma. V1 reached the heliopause on 2012 August 25, at 121.6 au, and V2 reached the heliopause on 2018 November 5, at 119.0 au. One of their remarkable discoveries was the detection of shocks propagating into the interstellar plasma from energetic solar events. These shocks are typically preceded by electron plasma oscillations excited by electron beams streaming along interstellar magnetic field lines ahead of the shocks. The frequencies of the plasma oscillations have now provided radial electron density profiles in the outer heliosphere and in the interstellar medium to radial distances of more than 145 au. The oscillations are typically preceded by bursts of high-energy ∼5–100 MeV electrons. These electron bursts are interpreted as being due to the reflection (and acceleration) of cosmic-ray electrons by the shock at the time the shock first contacts the magnetic field line that passes through the spacecraft. Relative timing between the cosmic rays reflected by the shock and the onset of the plasma oscillations allow us, for the first time, to estimate the energy, ∼20–100 eV, of the electron beams responsible for the plasma oscillations. These observations are combined into a self-consistent model called the foreshock model that describes the interaction of shocks of solar origin with the interstellar plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Non-permeable substrate carrier for electroplating

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

42 ENGINEERING↗
DOE OSTI2024

Efficient Modeling of Floating Wind Arrays Including Current Loads and Seabed Bathymetry

Capabilities for modeling the effects of seabed bathymetry and current drag loads on a floating wind farm are now available in an open-source model for quasi-static analysis. In this model, mooring lines and dynamic cables are represented by a quasi-static solver that can quickly represent complex mooring/cabling arrangements and arrays of floating bodies. To account for seabed bathymetry, we expand the model to include a surface mesh that captures changes in water depth over a rectangular grid. We formulate modifications to the catenary equations that capture a mooring line's profile and tensions when contacting a slope seabed. To account for current drag loads on mooring lines and dynamic cables, we formulate a novel technique that rotates the reference frame so that the vector sum of the the weight and the current force are used in the catenary equations, while accounting for the seabed orientation. To complete the system, current drag loads on floating substructures are handled by inclusion of strip-theory drag calculations. These new capabilities are verified by comparing with results from the established offshore dynamics models MoorDyn and OrcaFlex in equivalent steady-state scenarios. The results show very good agreement for both sloped seabeds and current loads. With computation times of the quasi-static model typically under one second, the model additions are a useful capability toward rapidly evaluating a floating wind array's response to environmental loads under realistic site conditions.

bathymetry↗
DOE OSTI2024

Efficient Modeling of Floating Wind Arrays Including Current Loads and Seabed Bathymetry: Preprint

Capabilities for modeling the effects of seabed bathymetry and current drag loads on a floating wind farm are now available in an open-source model for quasi-static analysis. In this model, mooring lines and dynamic cables are represented by a quasistatic solver that can quickly represent complex mooring/cabling arrangements and arrays of floating bodies. To account for seabed bathymetry, we expand the model to include a surface mesh that captures changes in water depth over a rectangular grid. We formulate modifications to the catenary equations that capture a mooring line's profile and tensions when contacting a slope seabed. To account for current drag loads on mooring lines and dynamic cables, we formulate a novel technique that rotates the reference frame so that the vector sum of the the weight and the current force are used in the catenary equations, while accounting for the seabed orientation. To complete the system, current drag loads on floating substructures are handled by inclusion of strip-theory drag calculations. These new capabilities are verified by comparing with results from the established offshore dynamics models MoorDyn and OrcaFlex in equivalent steady-state scenarios. The results show very good agreement for both sloped seabeds and current loads. With computation times of the quasi-static model typically under one second, the model additions are a useful capability toward rapidly evaluating a floating wind array's response to environmental loads under realistic site conditions.

bathymetry↗
DOE OSTI2024

Laser‐Sintered Silver Metallization for Silicon Heterojunction Photovoltaic Cells

Herein, a novel metallization technique is reported for crystalline silicon heterojunction (SHJ) solar cells in which silver (Ag) fingers are printed on the SHJ substrates by dispensing Ag nanoparticle‐based inks through a needle and then sintered with a continuous‐wave carbon dioxide (CO 2 ) laser. The impact of the Ag ink viscosity on the line quality and the line resistance is investigated on three Ag inks with different viscosities. Increasing ink viscosity yields higher Ag contact heights, larger aspect ratios, and lower line resistance values. The Ag line height increases from less than a micrometer to ≈18.62 ± 3.48 μm with the increasing viscosity. Photoluminescence imaging shows that the low‐resistance Ag metal contacts obtained do not result in any passivation damage of the SHJ substrate. This is because the wavelength of light emitted from the CO 2 laser (i.e., 10.6 μm) leads to optical absorption in the Ag, but this light is effectively transparent to the transparent conductive oxide film, amorphous silicon films, and crystalline silicon substrate. Bulk resistivity values as low as 6.5 μΩ cm are obtained for the laser‐sintered Ag contact and printed using the Ag ink with the highest viscosity in this work.

Mousumi, Jannatul Ferdous↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗
DOE OSTI2020

Modified Isotherm Modeling to Predict Cs Exchange with Crystalline Silicotitanate in Tank Waste Simulants

The U.S. Department of Energy is working to expedite processing of Hanford tank waste supernate at the Hanford Waste Treatment and Immobilization Plant. To support this goal, Washington River Protection Solutions is designing a Tank Side Cesium Removal (TSCR) system for suspended solids and cesium (Cs/ 137 Cs) removal from Hanford tank waste supernate. The ion exchange media selected for Cs removal at TSCR is crystalline silicotitanate (CST) that is manufactured in a nearly spherical form by Honeywell UOP LLC (UOP; Des Plaines, IL) as product IONSIV® R9140-B (Na form). The Zheng Anthony Miller (ZAM) isotherm model (Zheng et al. 1997) is a multicomponent ion exchange model used to predict the exchange of Group I metals onto CST. The ZAM isotherm has historically been used to predict Cs distribution values from Hanford and Savannah River Site (SRS) tank waste simulants. Figure S.1 summarizes model predictions from the ZAM isotherm that indicate poor prediction of Cs distribution values for simple and complex simulants with the engineered form of CST, IONSIV® R9140-B, and IONSIV® R9120-B where the solid line indicates a perfect fit by the model. The dotted lines indicate ±20% error. Batch contact testing with Hanford tank waste complex and simple simulants was used in conjunction with SRS simulants to experimentally determine Cs distribution values using a modification to the original isotherm model. The experimentally determined maximum Cs capacity for IONSIV® R9140-B CST in both the simple and complex matrices was found to be 0.53±0.3 mmoles Cs/g of CST. This value is not drastically different from the maximum Cs capacity of 0.58 mmoles Cs/g TAM-5 reported by Zheng et al. (1997). However, it is important to note that TAM-5 (commercially IONSIV® IE-910) is a powder. Hamm et al. (2002) determined that a dilution factor was needed to account for the Zr(OH)2 binder in the engineered form of CST. Hamm et al. determined that a dilution factor of 0.68 was appropriate to account for binder contribution and correct overprediction of Cs exchange on the engineered form of CST in ZAM calculations. This reduced the total capacity from 0.58 mmol/g with TAM-5 to 0.39 mmol/g for the engineered form of CST (Hamm et al. 2002). Despite substituting the experimentally determined maximum Cs capacity of 0.55 mmoles Cs/g for the literature-reported capacity of 0.39 mmoles Cs/g, it was determined that additional modifications to the model’s equilibrium rate constants were necessary in refining the isotherm model. The modified model overpredicted K+ uptake by the CST when compared to digested CST results described by Campbell et al. (2019). The modified model was further revised to omit three of the five K+ exchange equilibrium reactions described by ZAM to reduce the additional K+ loading seen by the model. Figure S.2 summarizes the revised model isotherm predictions plotted against measured Kd values.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗
DOE OSTI2023

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InO x ), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm −2 and 300 µC cm −2 , respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InO x hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Degradation of Monocrystalline Silicon Photovoltaic Modules From a 10-Year-Old Rooftop System in Florida

A system of 180 monocrystalline aluminum back-surface field modules were installed in Cocoa, Florida, for 10 years. In total, 156 modules are characterized and compared to 3 controls. Power degradation rates vary between – 0.14% to – 3.22% per year, with median and average rates of –0.92% and –1.05% per year, respectively. The losses are primarily resistive with minor optical and recombination loss contributions. Electroluminescence imaging shows a characteristic pattern, which is shown to be resistive in nature when compared to photoluminescence. Resistive losses are due to corrosion of the rear contact Ag/solder interface and, to a much lesser degree, gridline Ag oxidation. Moisture ingress through the backsheet is likely responsible for mediating corrosion. Optical losses are due mostly to a combination of antireflection coating degradation, minor encapsulant browning, and delamination. Minor front contact corrosion may contribute to recombination. Furthermore, this study expands upon previous work on this vintage of the module by examining a large sample set, comprehensive characterization including techniques not previously used on these modules, and a comparison between two other systems of different climates.

14 SOLAR ENERGY↗
DOE OSTI2022

LeTID-Affected Cells from a Utility-Scale Photovoltaic System Characterized by Deep Level Transient Spectroscopy

Photovoltaic modules from a utility-scale field experienced power loss by light- and elevated temperature-induced degradation (LeTID). Samples of one of the affected monocrystalline silicon cells were cored and extracted from the module packaging and encapsulation. One of the cell fragments was processed using a regeneration cycle of applying short-circuit-rated current in forward bias at 85 degrees C for 2 weeks, while the other fragment was kept in its outdoor-degraded LeTID state. Both samples were scribed to form 2-mm diameter isolated areas using a femtosecond-pulse-width laser micromachining system. Both isolated areas contained front grid line segments which were wire bonded to larger contact pads, and the samples were probed in a cryostat linked to a deep-level transient spectroscopy (DLTS) system. Using DLTS, a majority-carrier, hole-trap defect was detected on each sample with an activation energy of 0.42 eV. The LeTID-degraded sample, however, had a larger signal corresponding to a trap density of 1.1x10^13 cm-3, which was about five times larger than the 2.1x10^12 cm-3 trap density of the regenerated sample.

charge carrier lifetime↗
DOE OSTI2022

Chemical Pressure-Derived Assembly Principles for Dodecagonal Quasicrystal Approximants and Other Complex Frank–Kasper Phases

The structures of complex intermetallic compounds can often be interpreted in terms of assemblies of units from simpler parent phases. For example, dodecagonal quasicrystals appear, when viewed down their high-symmetry axes, as plane-filling arrangements of square and triangular tiles corresponding to the Cr 3 Si and Al 3 Zr 4 structure types, respectively. The atomic arrangements and cell-dimensions at the (100) faces of the cells of these structures provide a close geometrical match, which underlies not only dodecagonal quasicrystals and their approximants, but also the much more common σ-phase structure. In this Article, we show that such intergrowth of parent structures can arise from more than just geometrical coincidences, but can be driven by a complementary matching of atomic packing forces. DFT-Chemical Pressure (CP) analysis on elemental versions of the Cr 3 Si and Al 3 Zr 4 types reveal that in both cases arrays of positive interatomic pressures inhibit the formation of optimal contacts elsewhere in the structures. When they are lined up at the potential Cr 3 Si/Al 3 Zr 4 interfaces, however, positive pressures from the two structures interdigitate rather than coincide, providing the opportunity for the relaxation of strained interatomic contacts. That such relief is afforded by the interfaces is confirmed by CP analysis of the σ-phase (FeCr-type) structure. Building on this scheme, we introduce the CP interface function to represent how the CP features of atoms within a structure impact planes or other surfaces that could serve as interfaces between different structures. Using this function, we then explore how the favorability of interfaces between Cr 3 Si and Al 3 Zr 4 -type units is tuned by partial elemental substitution with Si, as well as their potential matches with Laves phase units. Furthermore, the emerging picture provides an account for features of the quasicrystal approximants Mn 7 VSi 2 and Mn 81.5 Si 18.5 , as well as a framework for approaching intermetallic intergrowth structures more broadly.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Testing Asoleyo Decorative Solar Cell and Modules: Cooperative Research and Development, CRADA Number CRD-20-16732 (Final Report)

Team Asoleyo is transforming the utilitarian rectangular grid that dominates the visual style of standard solar panels by re-designing solar cells’ silver contact grid using principles of symmetry, rhythm, and line. Our designs use well-established manufacturing equipment, techniques, and materials, achieving similar manufacturing costs but far superior aesthetic effect- without the need for additional layers or occlusion. This project will test new decorative PV Cell front contact designs, individually and interconnected within modules, for their performance characteristics.

14 SOLAR ENERGY↗
DOE OSTI2024

From pole parameters to line shapes and branching ratios

Abstract Resonances are uniquely characterized by their complex pole locations and the corresponding residues. In practice, however, resonances are typically identified experimentally as structures in invariant mass distributions, with branching fractions of resonances determined as ratios of count rates. To make contact between these quantities it is necessary to connect line shapes and resonance parameters. In this work we propose such a connection and illustrate the formalism with detailed studies of the $$\rho (770)$$ ρ ( 770 ) and $$f_0(500)$$ f 0 ( 500 ) resonances. Based on the line shapes inferred from the resonance parameters along these lines, expressions for partial widths and branching ratios are derived and compared to other approaches in the literature.

Physics↗
DOE OSTI2025

Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH 3 ) 3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO 2 , SiN x , SiO 2 /SiN x ) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10 4 –10 8 /cm 2 ) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10 7 /cm 2 , contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show V oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.

14 SOLAR ENERGY↗
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2022

Correspondence: Bill of Materials Variation and Module Degradation in Utility-Scale PV Systems

We report photovoltaic (PV) modules of the same make and model are often assembled with different bills of materials (BOMs). In this correspondence, we revisit two case studies of utility-scale silicon PV systems in which these differing BOMs were associated with faster-than-expected degradation. In one of the sites, we found that different metallization paste had been used for grid lines in some cells leading to loss of contact to the cell and severe series resistance degradation. We provide details on the observation of this mechanism at two additional sites not described in the original article. In a second case study, we found that two different types of cell had been used, and that they could be distinguished by their back contact. Cells with uniform back contacts suffered from light and elevated temperature induced degradation (LeTID), while those with local back contacts did not. We also briefly describe BOM variations observed at other sites to illustrate the extent of the challenge. Our results from both sites underscore that variations in BOM, even among modules of the same make and model can lead to reliability challenges.

14 SOLAR ENERGY↗