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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materializing rival ground states in the barlowite family of kagome magnets: quantum spin liquid, spin ordered, and valence bond crystal states

The spin- 1 2 kagome antiferromagnet is considered an ideal host for a quantum spin liquid ground state. We find that when the bonds of the kagome lattice are modulated with a periodic pattern, new quantum ground states emerge. Newly synthesized crystalline barlowite (Cu 4 (OH) 6 FBr) and Zn-substituted barlowite demonstrate the delicate interplay between singlet states and spin order on the spin- 1 2 kagome lattice. Comprehensive structural measurements demonstrate that our new variant of barlowite maintains hexagonal symmetry at low temperatures with an arrangement of distorted and undistorted kagome triangles, for which numerical simulations predict a pinwheel va- lence bond crystal (VBC) state instead of a quantum spin liquid (QSL). The presence of interlayer spins eventually leads to an interesting pinwheel q=0 magnetic order. Partially Zn-substituted bar- lowite (Cu 3.44 Zn 0.56 (OH) 6 FBr) has an ideal kagome lattice and shows QSL behavior, indicating a surprising robustness of the QSL against interlayer impurities. The magnetic susceptibility is simi- lar to that of herbertsmithite, even though the Cu 2+ impurities are above the percolation threshold for the interlayer lattice and they couple more strongly to the nearest kagome moment. This system is a unique playground displaying QSL, VBC, and spin order, furthering our understanding of these highly competitive quantum states.

36 MATERIALS SCIENCE↗
NASA NTRS1998

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗
DOE OSTI2021

The role of Si in determining the stability of the θ; precipitate in Al-Cu-Mn-Zr alloys

Precipitate-strengthened Al-Cu-Mn-Zr (ACMZ) alloys demonstrate improved microstructural stability compared to conventional Al-Cu alloys. Si is typically considered an impurity in these alloys, but a systematic analysis of ACMZ alloys with a range of Si levels revealed that there is a Si content range (~0.05 wt. % < Si < ~0.10 wt. %) for achieving optimal high temperature microstructural stability. A combination of hardness testing, scanning electron microscopy, and atom probe tomography has been used to understand the relationship between Si content, aging response, and thermal stability in ACMZ alloys. It is shown that the optimum Si content range corresponds to a reduced as-aged hardness, but a greater hardness value retained by the alloy after thermal exposure to 350 °C for 200 hours. A mechanism is proposed in which optimum Si levels reduce the number density of nucleation sites for θ' precipitates, resulting in larger precipitates that, on average, provide a reduced as-aged strength but are more coarsening resistant. This inherent θ' coarsening resistance allows more time for slow-diffusing Mn and Zr to reach the θ' interface and further stabilize the precipitates. Designing the optimal as-aged microstructure for improved thermal stability of the alloy by controlling impurity levels is a concept that has implications beyond the investigated Al-Cu alloy system.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic and optical properties of transition metal impurities in GaN and AlN

The optical properties of Cr(III) impurities are well studied and exploited in 𝛼−Al 2 ⁢O 3 , which enables ruby lasers. Photoluminescence spectra resembling the famous 1.78 eV emission of Cr in 𝛼−Al 2 ⁢O 3 have been observed in other wide-band-gap host materials, in particular AlN. However, it is unclear whether Cr would produce the same emission in the nitrides as in 𝛼−Al 2 ⁢O 3 , especially given the different local environment (tetrahedral vs octahedral coordination). We investigate the electronic and optical properties of transition metal substitutional impurities (Cr, Co, Ni, and Cu) in wurtzite GaN and AlN from first principles, utilizing hybrid density functional theory. We calculate the optical transition energies using a constrained occupation approach that accounts for the multideterminant nature of the excited states. Our results indicate that substitutional Cr(III) is not responsible for the emission near 1.78 eV observed in the nitrides. Among the examined impurities, only substitutional Co(II) produces emission near 1.78 eV. Based on the favorable properties of Co(II) (low formation energy, small Huang-Rhys factor, and an 𝑆 = 3/2 ground state) we propose it as a promising single-photon emitter or spin qubit. We additionally assign the PL peak observed near 1.05 eV in GaN and AlN to the 2 𝐸→ 4 𝐴 2 transition of the Ni(III) substitution.

36 MATERIALS SCIENCE↗
NASA NTRS2018

Conductivity of a Copper-Carbon Covetic Composite

NASA is currently engaged in the development of highly electrically conductive wire for space and aviation power and propulsion applications. Higher levels of electrical conductivity and lower densities compared to copper and aluminum are needed to improve the efficiency of commercial aviation and space flight. Carbon, in various forms, is being considered as a component in composites to increase conductivity and decrease density in Cu and Al. One form of carbon that is currently receiving much interest is known as covectic. The technology currently known as covetics was first introduced by Shugart and Scherer whose patents claimed "Carbon can be incorporated into any of these metals by melting the metal, mixing the carbon into the molten metal and, while mixing, applying a current of sufficient amperage to the molten mixture such that the carbon becomes incorporated into the metal, thereby forming a single phase metal-carbon material." It is reported that in this process a conversion reaction occurs with the carbon forming covalent bonds with the host metal, and that covetic processing enables higher carbon solubility and improvements in properties. Although there is a growing body of work supporting covetic materials, it is still a very new and somewhat controversial field. Composition, density, and electrical conductivity measurements of a covetically processed alloy ingot of Cu and C, with a nominal composition of Cu-0.4wt.% C, were made. A pure Cu ingot was similarly processed for comparison. Sections of these ingots were worked into wire and tested. Only small amounts of C could be detected in the Cu-0.4wt.% C ingot, and trace amounts (0.006 wt.%) in the wire. All wires had densities very close to the full density of pure Cu, indicating a high level of Cu purity and low void fraction. Finally, the electrical conductivity of the Cu-0.4wt.% C wires were 9% lower than the samples similarly processed but without C additions. The wires made without C additions had conductivities approximately equal to pure Cu. The low conductivity of the Cu-0.4wt.% C material is believed to be due to: (1) a structure of interfaces in the wire created by collapsed voids lined with elemental C, (2) impurities, such as Fe in the Cu, which came from the added C, and (3) a small volume fraction of voids.

Degroh, Henry C.↗
DOE OSTI2021

Fluctuating magnetism of Co- and Cu-doped NaFeAs

We report an x-ray emission spectroscopy study of the local fluctuating magnetic moment (μbare) in NaFe 1-x Co x As and NaFe 1-x Cu x As. In NaFeAs, the reduced height of the As ions induces a local magnetic moment higher than BaFe 2 As 2 despite lower TN and ordered magnetic moment. As NaFeAs is doped with Co, μbare is slightly reduced, whereas Cu doping leaves it unaffected, indicating a different doping mechanism: based on electron counting for Co, whereas impurity scattering dominates in the case of Cu. Finally, we observe an increase in μbare with temperature in all samples as observed in electron- and hole-doped BaFe 2 As 2 . Since both Co and Cu doping display superconductivity, our findings demonstrate that the formation of Cooper pairs is not connected with the complete loss of fluctuating paramagnetic moments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Thermoelectric Performance in Chalcopyrite Cu 1-x Ag x GaTe 2 –ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

The understanding of thermoelectric properties of ternary I–III–VI 2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu 1–x Ag x GaTe 2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu 1–x Ag x GaTe 2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu 1–x Ag x GaTe 2 , which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu 1–x Ag x GaTe 2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu 1–x Ag x GaTe 2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu 0.68 Ag 0.3 GaTe 2 –0.5%ZnTe compound are achieved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1984

Homogeneous versus heterogeneous crystal nucleation in Li2O-2SiO2 glass

When analyzing crystal nucleation in glasses, it is difficult to distinguish between homogeneous and heterogeneous nucleation. A method is proposed to investigate the nature of crystal nucleation in Li2O-2SiO2, and calculations are performed to determine under which conditions saturation effects help ascertain the nature of the nucleation. The capability of detecting impurity particles in unheated glass via standard micrographic techniques (SEM or REM) and small angle X-ray scattering (SAXS) is explored. Results indicate that if the maximum impurity particle densities do not exceed 2 x 10 to the 7th per cu cm then heterogeneous nucleation may be excluded and most impurity particles with densities in excess of 10 to the 10th per cu cm are detectable by SAXS. It is concluded that crystal nucleation in this system most probably occurs homogeneously.

Weinberg, M. C.↗
NASA NTRS1976

Silicon solar cells from transition metal doped Czochralski and web crystals

The influence of metallic impurities on solar cell characteristics has been examined to establish the cost sensitive purity versus performance trade-offs. Solar cells were fabricated on 2 to 4 ohm-cm p-type substrates obtained by Czochralski and dendritic web growth processes. Controlled amounts of metallic impurities were introduced into the melt during growth and included Fe, Cr, Mn, Ni, Cu, Ti, V, Zr, Mg, Zn, and Al. Impurity concentrations in the crystals were determined using emission and mass spectrographic techniques and in some cases by neutron activation analysis. The solar cells were characterized by means of a computer program to curve-fit measured voltage-current data. The principal effect of the added impurities is a degradation of lifetime and diffusion length.

Davis, J. R.↗
DOE OSTI2022

Electrification and decarbonization of spent Li-ion batteries purification by using an electrochemical membrane reactor

The expanding electric vehicle market brings with it exponential growth in the use of lithium (Li)-ion batteries (LIB) for which a wave of spent LIB is expected to come within the next 5 to 10 years. Due to the economic and strategic value imbedded within the metals contained in LIB, different recycling technologies, including hydrometallurgy, pyrometallurgy and direct recycling, are under development. Being different from previous hydrometallurgical methods, which may have high chemical consumption and negative environmental impact, an electrochemical membrane reactor is designed and validated for the first time, to electrify and decarbonize the impurity removal process. This reactor electroplates copper (Cu) and electrochemically precipitates aluminum (Al) and iron (Fe) from simulated spent LIB leachates, by consuming only air, water, and electricity, and the impurities are reduced to <1 ppm. The purified leachate maintains 99.5 % of the nickel (Ni), 95.4 % of the cobalt (Co) and 99.14 % of manganese (Mn) from the original leachate solution, and then can be directly applied for cathode precursor synthesis. Additionally, the purification process doesn’t introduce extra impurity, and the reactor restoration process generates valuable by-product hydro sulfate (H2SO4). This electrochemical process can reduce the cost, because of the much less chemical consumption and the valuable by-product generation, and mitigates the waste emissions, because of no extra impurity introduced and no greenhouse gas (GHG) produced. In conclusion, the chemical precipitation method uses significant amount of NaOH, which induced GHG emission during the manufacturing process.

25 ENERGY STORAGE↗
DOE OSTI2022

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Resolving Configurational Disorder for Impurities in a Low-Entropy Phase

Hematite (α-Fe 2 O 3 ) exerts a strong control over the transport of minor but critical metals in the environment and is used in multiple industrial applications; the photocatalysis community has explored the properties of hematite nanoparticles over a wide range of transition metal dopants. Nonetheless, simplistic assumptions are used to rationalize the local coordination environment of impurities in hematite. Here, we use ab initio molecular dynamics (AIMD)-guided structural analysis to model the extended X-ray absorption fine structure (EXAFS) of Cu 2+ - and Zn 2+ -doped hematite nanoparticles. Specific defect–impurity associations were identified, and the local coordination environments of Cu and Zn both displayed considerable configurational disorder that, in aggregate, approached Jahn–Teller-like distortion for Cu but, in contrast, maintained hematite-like symmetry for Zn. This study highlights the role of defects in accommodating impurities in a nominally low-entropy phase and the limits to traditional shell-by-shell fitting of EXAFS for dopants/impurities in unprecedented bonding environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of impurities on phase transformation and precipitation in a low-carbon steel

Impurity elements have been added to a commercial low carbon steel grade to simulate the levels that could arise as a result of increased scrap recycling during steel production. In this study, continuous cooling transformation (CCT) diagrams were constructed for the steels with varying levels of impurities, and it is shown that impurities suppress the phase transformation across a wide range of cooling rates. It was found that a step was formed in the start temperature curve, separating the reconstructive and displacive transformations. The influence of impurities on both the reconstructive transformation and displacive transformation are discussed. Additionally, Cu precipitates were observed using scanning transmission electron microscopy (STEM) in the highest impurity-containing steel after slow cooling (0.05°C/s), fast cooling (5°C/s) and interrupted cooling. It was found that the precipitation kinetics is in the following order: cementite within the secondary phase and cementite at secondary phase-ferrite interface> ferrite grain boundaries> ferrite grain matrix. Atom-probe tomography (APT) revealed Cu precipitates formed on the surface of cementite lamellae, but not within it. This work offers insights for the phase transformation control and precipitation regulation during the thermomechanical processing of low carbon steels containing impurity elements due to scrap recycling.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hydrogen isotope fractionation – Fundamental insights leaving to process scaleup

This final report summarizes the PhD research of Dr. Mayura Silva who was supported on the project from inception in August 2021 to his graduation in December 2023. Dr. Silva undertook a detailed examination of the eGicacy of graphene interlayers on H/D selectivity in electrochemical proton / deuteron pump cells. His work focused on the role of impurity cations (especially NH 4 * and Cu 2+ which are resident in membranes as a residual from the ammonium persulfate treatment used to remove copper backing from the graphene during membrane preparation), and on the composition of evolved gases from hydrogen / deuterium pump cells that were fed a 50:50 mixture of H 2 and D 2 gas. The key finding is that previous reports of very high H/D selectivity in hydrogen pump cells having Nafion | graphene | Nafion membranes installed were not reproduced.

08 HYDROGEN↗
NASA NTRS1999

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation during Physical Vapor Transport Growth

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V(zn)]. The annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V(zn)] along the gravity vector direction were observed whereas in the vertically stabilized grown crystal the segregations of these point defects were radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Su, Ching-Hua↗
NASA NTRS1999

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation During Physical Vapor Transport Growth

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the grown ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V (sub Zn)]. Annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V (sub Zn)] were observed along the gravity vector direction whereas in the vertically stabilized grown crystal the segregation of these point defects was radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Su, Ching-Hua↗
NASA NTRS1998

Liquidus Temperatures and Solidification Behavior in the Copper-Niobium System

The copper-niobium phase diagram has been under active debate; thus, a corroboratory experimental study is needed. In this investigation, the melts of Cu-Nb alloys at compositions ranging from 5 lo 86 wt% Nb were processed in different environments and solidified at relatively low rates of 50-75 C/s to determine liquidus temperatures and to study solidification behavior. For all samples processed under very clean conditions, only Nb dendrites in a Cu matrix were observed; while in the presents of oxygen impurities, the alloys containing 5-35 wt% Nb exhibited microstructure of Nb-rich spheroids and Nb dendrites in the Cu matrix. The results obtained from clean conditions are in fair agreement with the Cu-Nb phase diagram having an S-shaped, near-horizontal appearances of the liquidus. The formation of Nb-rich droplets at slow cooling rates is discussed in terms of a stable liquid miscibility gap induced by oxygen.

Li, D.↗
NASA NTRS1998

Liquidus Temperatures and Solidification Behavior in the Copper-Niobium System

The copper-niobium phase diagram has been under active debate; thus, a corroboratory experimental study is needed. In this investigation, the melts of Cu-Nb alloys at compositions ranging from 5 to 86 wt pct Nb were processed in different environments and solidified at relatively low cooling rates of 50 to 75 C/s to determine liquidus temperatures and to study solidification behavior. For all samples processed under very clean conditions, only Nb dendrites in a Cu matrix were observed; while in the presence of oxygen impurities the alloys containing 5 to 35 wt pct Nb exhibited microstructure of Nb-rich spheroids and Nb dendrites in the Cu matrix. The results obtained from clean conditions are in fair agreement with the Cu-Nb phase diagram having an S-shaped, near-horizontal appearance of the liquidus. The formation of Nb- rich droplets at slow cooling rates is discussed in terms of a stable liquid miscibility gap induced by oxygen.

Li, D.↗